• Journal of Magnetics
• /
• v.14 no.3
• /
• pp.117-119
• /
• 2009

Polycrystalline samples of LaFe$O_3$-BaTi$O_3$ were synthesized to examine the structural and magnetic behavior. X-ray diffraction confirmed that the ceramics had tetragonal symmetry with less tetragonal strain (c/a) than BaTi$O_3$. The magnetic hysteresis measured at room temperature suggested that the magnetic nature deviates from that of the parent LaFe$O_3$, which has antiferromagentic with a G-type spin structure. Improved magnetic behavior of the solid solution compound might be due to the increase in the canting angle of the spin. The presence of oxygen vacancies and fluctuating Fe valence, arising from the substitution of $Ba^{2+}$ and $Ti^{4+}$ at the A- and B-sites of the lattice, might contribute to bulk magnetization. The temperature dependent magnetization indicated that magnetization was higher at low temperatures and showed a decreasing trend with increasing temperature to room temperature. The magnetic transition temperature of these samples was 665 K and 743 K for the mixed system and LaFe$O_3$, respectively.

• Progress in Superconductivity
• /
• v.10 no.2
• /
• pp.128-132
• /
• 2009

Polycrystalline samples of $(Ru_{0.8}Nb_{0.2})Sr_2(Gd_{1.5-x}Nd_xCe_{0.5})Cu_2O_z$($ 0{\leq}x{\leq}1.25$) have been synthesized by a solid-state reaction route. The X-ray diffraction data revealed that the Nd solubility limit can be placed between x=0.5 and x=0.75. The superconducting transition temperature decreased with increasing Nd content, confirming that Nd entered the lattice. Room-temperature thermoelectric power measurements showed that all the samples are in the underdoped state and the partial substitution of Nd for Gd resulted in a decrease in the carrier density on the superconducting layers.

• Journal of the Korean Ceramic Society
• /
• v.27 no.7
• /
• pp.841-850
• /
• 1990

The electrical conductivity of SrTiO3 thick films, which has been prepared by screen printing and sintering on polycrystalline Al2O3 substrates, was determined as a function of oxygen partial pressure and temperature. The data showed that electrical conductivity was proportional to the -1/4th power of the oxygen partial pressure for the oxygen partial pressure range from 10-4-10-8 to 10-20 atm and proportional to Po2+1/4 for the oxygen partial pressure range from 10-6-10-4 to 1atm. And then n-p transition region of electrical conductivity moved to lower oxygen partial pressure region as the sintering temperature of thick film specimens increased under about 140$0^{\circ}C$. These data were consistent with the presence of small amounts of acceptor impurities in SrTiO3 thick film which have been diffused from Al2O3 substrate in the range of solid solubility limit.

• Progress in Superconductivity and Cryogenics
• /
• v.17 no.4
• /
• pp.8-11
• /
• 2015

We studied on the visible emission of Cu-ion-doped perovskite hafnate $SrHfO_3$ (SHO:Cu) with the photo-excitation energy dependence. The polycrystalline SHO:Cu samples were newly synthesized in the solid state reaction method. From the X-ray diffraction measurement it was found that the crystalline structure of SHO:Cu is nearly identical to that of undoped $SrHfO_3$. Interestingly, the photoluminescence excitation (PLE) spectra change significantly with the emission energy, which is linked to the strong dependence of the visible emission on the photo-excitation energy. This unusual emission behavior is likely to be associated with the mixed valence states of the doped Cu ions, which were revealed by X-ray photoelectron spectroscopy. We compared our finding of tunable visible emission in the SHO:Cu compounds with the cases of similar materials, $SrTiO_3$ and $SrZrO_3$ with Cu-ion-doping.

• Applied Science and Convergence Technology
• /
• v.23 no.6
• /
• pp.371-375
• /
• 2014

Diffusion coefficient of Fe in polycrystalline host ZnSe as a mid-IR gain medium has been measured in the annealing temperature ranges of 850 to $950^{\circ}C$. The synthesis of the samples was carried out in quartz ampoule in which the Fe thin film deposited by physical vapor evaporation method on the ZnSe. One can realize that the diffusion coefficient strongly depends on the surface active surfactants through the cleaning process and the substrate temperature during the thin film deposition leading to $2.04{\times}10^{-9}cm^2/s$ for $Fe^{2+}:ZnSe$. The Annealing temperature dependence of the Fe ions diffusion in ZnSe was used to evaluate the activation energy, $E_a$=1.39 eV for diffusion and the pre-exponential factor $D_0$ of $13.5cm^2/s$.

• Journal of the Korean institute of surface engineering
• /
• v.47 no.1
• /
• pp.20-24
• /
• 2014

Joule heat is generated by applying an electric filed to a conductive layer located beneath or above the amorphous silicon film, and is used to raise the temperature of the silicon film to crystallization temperature. An electric field was applied to an indium tin oxide (ITO) conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced within the range of a millisecond. To investigate the kinetics of Joule-heating induced crystallization (JIC) solid phase crystallization was conducted using amorphous silicon films deposited by plasma enhanced chemical vapor deposition and using tube furnace in nitrogen ambient. Microscopic and macroscopic uniformity of crystallinity of JIC poly-Si was measured to have better uniformity compared to that of poly-Si produced by other methods such as metal induced crystallization and Excimer laser crystallization.

• Journal of Magnetics
• /
• v.14 no.2
• /
• pp.86-89
• /
• 2009

Structural and magnetic properties of polycrystalline $CaFe_2O_4$ prepared by the solid state reaction method were studied using powder X-ray diffraction (XRD) and $M{\ddot{o}}ssbauer$ spectroscopy. The structure of $CaFe_2O_4$ belongs to an orthorhombic system (space group: Pnma) with the lattice parameters $a=9.2373\;{\AA}$, $b=3.0237\;{\AA}$, and $c=10.7124\;{\AA}$. Results of structural refinement indicate, however, that there are two slightly different iron sites in the sample. The $M{\ddot{o}}ssbauer$ spectrum at 4.2 K shows a hyperfine sextet with a hyperfine magnetic field and an isomer shift of 47.3 T and 0.36 mm/s, respectively. An examination of the spectrum revealed that the line widths of the spectral lines were not uniform. The degree of asymmetric line broadening decreases with increasing temperature, suggesting that the difference in the degree of crystalline distortions between two $FeO_6$ octahedra is eliminated as the temperature rises.

• Nuclear Engineering and Technology
• /
• v.29 no.1
• /
• pp.7-14
• /
• 1997

Grain boundary diffusion plays a significant role in fission gas release, which is one of the crucial processes dominating nuclear fuel performance. Gaseous fission produce such as Xe and Kr generated during nuclear fission have to diffuse in the grain lattice and the boundary inside fuel pellets before they reach the open spaces in a fuel rod. These processes can be studied by 'tracer diffusion' techniques, by which grain boundary diffusivity can be estimated and directly used for low burn-up fission gas release analysis. However, only a few models accounting for the both processes are available and mostly handle them numerically due to mathematical complexity. Also the numerical solution has limitations in a practical use. In this paper, an approximate analytical solution in case of stationary grain boundary in a polycrystalline solid is developed for the tracer diffusion techniques. This closed-form solution is compared to available exact and numerical solutions and it turns out that it makes computation not only greatly easier but also more accurate than previous models. It can be applied to theoretical modelings for low bum-up fission gas release phenomena and experimental analyses as well, especially for PIE (post irradiation examination).

• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.4
• /
• pp.101-104
• /
• 2018

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

• Journal of Magnetics
• /
• v.17 no.4
• /
• pp.265-270
• /
• 2012

We report improved low-field magnetoresistance (LFMR) effects of the $La_{0.7}Sr_{0.3}Mn_{1+d}O_3-Mn_3O_4$ composite films with the nominal composition of $La_{0.7}Sr_{0.3}MnO_3$(LSMO)-50 mol% $Mn_3O_4$. The composite films were fabricated by ex-situ solid phase crystallization (SPC) of amorphous films at the annealing temperature region of $900-1100^{\circ}C$ for 2 h in a pure oxygen atmosphere. The amorphous films were deposited on polycrystalline $BaZrO_3$ (poly-BZO) substrates by dc-magnetron sputtering at room temperature. The Curie temperatures ($T_C$) of all composite films were insignificantly altered in the range of 368-372 K. The highest LFMR value of 1.29 % in 0.5 kOe with the maximum dMR/dH value of $37.4%kOe^{-1}$ at 300 K was obtained from 900 nm-thick composite film annealed at $1100^{\circ}C$. The improved LFMR properties of the composite films are attributed to effective spin-dependent scattering at the $La_{0.7}Sr_{0.3}Mn_{1+d}O_3$ grain boundaries sharpened by adjacent chemically compatible $Mn_3O_4$ grains.