• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.359-363
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• 2005

The organic insulation devices with MIM (metal-insulator-metal) structures as PVP gate insulation films were prepared for the application of organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as solute and PGMEA (propylene glycol monomethyl ether acetate) as solvent. The cross-linked PVP insulation films were also prepared by addition of poly (melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross-linked PVP films was found to be about 300 pA with low current noise. and showed better property in electrical properties as compared with the co-polymer PVP insulation films. In addition, cross-linked PVP insulation films showed better surface morphology (roughness), showing about 0.11${\~}$0.18 nF in capacitance for all PVP film samples.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1700-1701
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• 2011

본 논문에서는 게이트 절연막인 poly(4-vinylphenol) (PVP) 용제 농도 변화에 따른 유기 박막 트랜지스터를 제작하고 그 특성을 분석하였다. PVP는 propylene glycol monomethyl ether acetate(PGMEA) 와 poly melamine-co-formaldehyde (CLA)를 혼합하여 cross linked PVP를 만들어 사용하였다. Cross-liked PVP의 CLA 농도 비율을 각각 6 wt%, 9 wt%로 변화시켜 유기 박막 트랜지스터를 제작하고 소자의 전기적 특성을 분석 하였다.

• Korean Chemical Engineering Research
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• v.43 no.5
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• pp.579-587
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• 2005

Phase separations of Poly(4-vinylphenol)(PVPh)/acetone and PVPh/methyl ethyl ketone solutions were measured using the thermal optical analysis (TOA) method. The phase separations of these system showed the behaviors of LCST-type (lower critical solution temperature). The measured cloud temperatures were lowered with increasing molecular weight of PVPh, and cloud temperatures of PVPh/MEK solutions shifted to higher temperature regions, compared to the PVPh/acetone solutions. Phase equilibria of PVPh/ketone solutions were described with taking account of self-associations of PVPh and cross-associations between PVPh and solvent, by using the PC-SAFT equation of state. PC-SAFT EoS parameters of PVPh and cross-association parameters were determined by simultaneously fitting liquid density data of PVPh and VLE data of the PVPh/acetone system. The estimated parameters of PVPh and cross-association parameters were utilized to calculations of the binodal and spinodal curves, and the calculated binodal curves were in good agreements with the experimental cloud temperatures.

• Polymer(Korea)
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• v.26 no.6
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• pp.737-744
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• 2002

Thermodynamic miscibility of the binary blends composed of semi-crystalline poly (butylene 2,6-naphthalate) (PBN) and amorphous poly (4-vinylphenol) (PVPh) was investigated using differential scanning calorimetry (DSC) and Fourier transform infrared (FTIR) spectroscopy. DSC scan results showed that there was a single glass transition temperature (T$\_$g/) for each blend. Crystalline melting temperature (T$\_$m/) depression of the PBN in the blends was also observed with the increase of PVPh content. Both results of the single T$\_$g/ and the depression of T$\_$m/ for the PBN/PVPh blends indicate that the blends are thermodynamically miscible at the molecular level. FTIR spectroscopic analysis confirmed that strong intermolecular hydrogen bonding interactions between the ester carbonyl groups of the PBN and the hydroxyl groups of the PVPh are occurred.

• Macromolecular Research
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• v.17 no.6
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• pp.436-440
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• 2009

We improved the performance of pentacene-based thin film transistors by changing the curing environment of poly(4-vinylphenol) (PVP) gate dielectrics, while keeping the dielectric constant the same. The field-effect mobility of the pentacene TFTs constructed using the vacuum cured PVP was higher than that of the device based on the Ar flow cured gate dielectric, possibly due to the higher crystalline perfection of the pentacene films. The present results demonstrated that the curing conditions used can markedly affect the surface energy of polymer gate dielectrics, thereby affecting the field-effect mobility of TFTs based on those dielectrics.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.97-101
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• 2017

In this paper, IGZO thin film transistor (TFT) was fabricated with cross-linked Poly (4-vinylphenol) (PVP) gate dielectric for flexible, transparent display applications. The PVP is one of the candidates for low-temperature gate insulators. MIM structure was fabricated to measure the leakage current and evaluate the insulator properties according to the annealing temperature. Low leakage current ( <0.1nA/cm2 @ 1MV/cm ) was observed at $200^{\circ}C$ annealing condition and decreases much more as the annealing temperature increases. The electrical characteristics of IGZO TFT such as subthreshold swing, mobility and ON/OFF current ratio were also improved, which shows that the performance of IGZO TFTs with PVP can be enhanced by reducing the amount of incomplete crosslinking in PVP.

• Korean Chemical Engineering Research
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• v.43 no.6
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• pp.704-714
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• 2005

Phase separations of Poly(4-vinylphenol)(PVPh)/Ethyl Acetate and PVPh/Butyl Acetate solutions were measured using the thermal optical analysis (TOA) method. The experimental phase separation data were correlated with liquid-liquid equilibria relations based on PC-SAFT equation of state. The phase separations of these system showed the behaviors of LCST (lower critical solution temperature)-type. The measured cloud temperatures were lowered with increasing in molecular weights of polymer(PVPh), and cloud temperatures of PVPh/Ethyl Acetate solutions shifted to lower temperature regions, compared to the PVPh/Butyl Acetate solutions. Extents of cross-association between solvent molecule and polymer in the PVPh/Ethyl Acetate solutions were measured using the FT-IR spectrum analysis method, and cross-association parameters of PC-SAFT model were estimated from experimental extents of cross-association. By using the estimated cross-association parameters between PVPh and solvent molecule, binodal and spinodal curves of liquid-liquid equilibria in PVPh/Ethyl Acetate and PVPh/Butyl Acetate solutions were calculated from PC-SAFT equation of state. The calculated binodal curves of these system were shown to be well agreeable with the experimental cloud temperature curves.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.194.1-194.1
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• 2015

Transition metal dichalcogenide (TMD) with layered structure, has recently been considered as promising candidate for next-generation flexible electronic and optoelectronic devices because of its superior electrical, optical, and mechanical properties.[1] Scalability of thickness down to a monolayer and van der Waals expitaxial structure without surface dangling bonds (consequently, native oxides) make TMD-based thin film transistors (TFTs) that are immune to the short channel effect (SCE) and provide very high field effect mobility (${\sim}200cm^2/V-sec$ that is comparable to the universal mobility of Si), respectively.[2] In addition, an excellent photo-detector with a wide spectral range from ultraviolet (UV) to close infrared (IR) is achievable with using $WSe_2$, since its energy bandgap varies between 1.2 eV (bulk) and 1.8 eV (monolayer), depending on layer thickness.[3] However, one of the critical issues that hinders the successful integration of $WSe_2$ electronic and optoelectronic devices is the lack of a reliable and controllable doping method. Such a component is essential for inducing a shift in the Fermi level, which subsequently enables wide modulations of its electrical and optical properties. In this work, we demonstrate n-doping method for $WSe_2$ on poly-4-vinylphenol and poly (melamine-co-formaldehyde) (PVP/PMF) insulating layer and adjust the doping level of $WSe_2$ by controlling concentration of PMF in the PVP/PMF layer. We investigated the doping of $WSe_2$ by PVP/PMF layer in terms of electronic and optoelectronic devices using Raman spectroscopy, electrical measurements, and optical measurements.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.27-31
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• 2007

The cpapcitors with MIM(metal-insulator-metal) structures using PVP gate insulation films were prepared for the application of flexible organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as a solute and PGMEA(propylene glycol monomethyl ether acetate) as a solvent. The cross-linked PVP insulation films were also prepared by addition of poly(melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross- linked PVP films was found to be about 1.3 nA on Al/PES(polyethersulfone) substrate, whereas, on ITO/ glass substrate was about 27.5 nA indicating improvement of the leakage current at Al/PES substrates. Also, the capacitances of all prepared samples on ITO/glass and Al/PES substrates w ere ranged from 1.0 to $1.2nF/cm^2$, showing very similar result with the calculated capacitance values.

• The Journal of Korea Robotics Society
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• v.11 no.3
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• pp.140-145
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• 2016

In this paper, we fabricate arrayed-type flexible capacitive touch sensor using liquid metal (LM) droplets (4 mm spatial resolution). Poly-4-vinylphenol (PVP) layer is used as a dielectric layer on the electrode patterned Polyethylene naphthalate (PEN) film. Bonding tests between hydroxyl group (-OH) on the PVP film and polydimethylsiloxane (PDMS) are conducted in a various $O_2$ plasma treatment conditions. Through the tests, we can confirm that non-$O_2$ plasma treated PVP layer and $O_2$ plasma treated PDMS can make a chemical bond. To measure dynamic range of the device, one-cell experiments are conducted and we confirmed that the fabricated device has a large dynamic range (~60 pF).