• Title/Summary/Keyword: Polishing velocity

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Study on Optical Properties of Lithium niobate using Chemical Mechanical Polishing (화학 기계적 연마에 의한 리튬 니오베이트의 광학 특성에 관한 연구)

  • Jeong, Suk-Hoon;Kim, Young-Jin;Lee, Hyun-Seop;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.121-122
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    • 2008
  • Lithium Niobate (LN:LiNbO3) is a compound of niobium, lithium and oxygen. The characteristics of LN are piezoelectricity, ferroelectricity and photoelectricity, and which is widely used in surface acoustic wave (SAW). To manufacture LN device, the LN surface should be a smooth surface and defect-free because of optical property, but the LN material is processed difficult by traditional processes such as grinding and mechanical polishing (MP) because of its brittleness. To decrease defects, chemical mechanical polishing (CMP) was applied to the LN wafer. In this study, the suitable parameters scuh as pressure and relative velocity, were investigated for the LN CMP process. To improve roughness, the LN CMP was performed using the parameters that were the highest removal rate among process parameters. And, evaluation of optical property was performed by the optical reflectance and non-linear characteristic.

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A study of temperature behavior and friction force generated by chemical mechanical polishing (화학 기계적 연마 시 발생하는 온도특성과 마찰력에 관한 연구)

  • 권대희;김형재;정해도;이응숙;신영재
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.10a
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    • pp.939-942
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    • 1997
  • In chemical mechanical polishing(CMP) there are many factors affecting the results. Temperature is one of the factors and it affects the removal rate. That is, the higher it arise, the more the material is removed. But the detailed temperature behavior is not discovered. In this study, we discover the distribution of temperature across the pad where the wafer has just been polished. And then we reveal the cause of the result in connection with the mechanical structure. In addition, we also discover the relationship of the friction force and normal force. With the result of two forces, we get the friction coefficient and obtain the contact model of the wafer and pad.

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Effect of Temperature on Polishing Properties in Oxide CMP (산화막 CMP에서 발생하는 온도가 연마특성에 미치는 영향)

  • Kim, Young-Jin;Park, Boum-Young;Kim, Hyoung-Jae;Jeong, Hae-Do
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.2
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    • pp.93-98
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    • 2008
  • We investigated the effect of process temperature on removal rate and non-uniformity based on single head kinematics in oxide CMP. Generally, it has been known that the temperature profile directly transfers to the non~uniformity of removal rate on the wafer, which has similar tendency with the sliding distance of wafer. Experimental results show that platen velocity is a dominant factor in removal rate as well as average temperature. However, the non-uniformity does not coincide between process temperature and removal rate, due to slurry accumulation and low deviation of temperature. Resultantly, the removal rate is strongly dependent on the rotational speed of platen, and its non -uniformity is controlled by the rotational speed of polishing head. It means lower WIWNU (With-in-wafer-non-uniformity) can be achieved in the region of higher head speed.

A Global Planarization of Interlayer Dielectric Using Chemical Mechanical Polishing for ULSI Chip Fabrication (화학기계적폴리싱(CMP)에 의한 층간절연막의 광역평탄화에 관한 연구)

  • Jeong, Hea-do
    • Journal of the Korean Society for Precision Engineering
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    • v.13 no.11
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    • pp.46-56
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    • 1996
  • Planarization technique is rapidly recognized as a critical step in chip fabrication due to the increase in wiring density and the trend towards a three dimensional structure. Global planarity requires the preferential removal of the projecting features. Also, the several materials i.e. Si semiconductor, oxide dielectric and sluminum interconnect on the chip, should be removed simultaneously in order to produce a planar surface. This research has investihgated the development of the chemical mechanical polishing(CMP) machine with uniform pressure and velocity mechanism, and the pad insensitive to pattern topography named hard grooved(HG) pad for global planarization. Finally, a successful result of uniformity less than 5% standard deviation in residual oxide film and planarity less than 15nm in residual step height of 4 inch device wafer, is achieved.

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Minimum Sensing Angular Velocity Improvement of Ring Laser Gyro Using a Low-Scattering Mirror

  • Jo, Min-Sik;Shim, Kyu-Min;Kim, Hoe-Young;Cho, Hyun-Ju;Jun, Gab-Song;Son, Seong-Hyun
    • 제어로봇시스템학회:학술대회논문집
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    • 2001.10a
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    • pp.56.2-56
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    • 2001
  • For the improvement of minimum sensing angular velocity of ring laser gyro, the influence of a low-scattering mirror application to laser resonator was investigated. Super polishing technique was employed for the fine mirror substrates of less than 1-${\AA}$-rms roughness. Mirror coating using ion-beam sputtering coating machine produced low-scattering mirror less than 30-ppm scattering. As a result of the mirror application to ring laser, the minimum sensing angular velocity of the gyro was improved down to about 0.1 deg/sec.

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Degradation from Polishing Damage in Ferroelectric Characteristics of BLT Capacitor Fabricated by Chemical Mechanical Polishing Process (화학적기계적연마 공정으로 제조한 BLT Capacitor의 Polishing Damage에 의한 강유전 특성 열화)

  • Na, Han-Yong;Park, Ju-Sun;Jung, Pan-Gum;Ko, Pil-Ju;Kim, Nam-Hoon;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.236-236
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    • 2008
  • (Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

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Optimization of Groove Sizing in CMP using CFD (CFD를 이용한 CMP의 Groove Sizing 최적화)

  • Jang, Ji-Hwan;Lee, Do-Hyung
    • Proceedings of the KSME Conference
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    • 2004.11a
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    • pp.1522-1527
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    • 2004
  • In this paper, slurry fluid motion, abrasive particle motion, and effects of groove sizing on the pads are numerically investigated in the 2D geometry. Groove depth is optimized in order to maximized the abrasive effect. The simulation results are analyzed in terms of shear stress on pad, groove and wafer, streamline and velocity vector. The change of groove depth entails vortex pattern change, and consequently affects material removal rate. Numerical analysis is very helpful for disclosing polishing mechanism and local physics.

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Passivation effect on large volume CdZnTe crystals

  • B. Park;Y. Kim;J. Seo;J. Byun;K. Kim
    • Nuclear Engineering and Technology
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    • v.54 no.12
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    • pp.4620-4624
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    • 2022
  • Several cadmium zinc telluride (CZT) crystals were fabricated into radiation detectors using methods that included slicing, dicing, lapping, polishing, and chemical etching. A wet passivation with sodium hypochlorite (NaOCl) was then carried out on the Br-etched detectors. The Te-rich layer on the CZT surface was successfully compensated to the Te oxide layer, which was analyzed with X-ray photoelectron spectroscopy data of both a Br-etched crystal and a passivated CZT crystals. We confirmed that passivation with NaOCl improved the transport property by analyzing the mobility-lifetime product and surface recombination velocity. The electrical and spectroscopic properties of large volume detectors were compared before and after passivation, and then the detectors were observed for a month. Both bar and quasi-hemispherical detectors show an enhancement in performance after passivation. Thus, we could identify the effect of NaOCl passivation on large volume CZT detectors.

A Study on the Design for the Air Impeller of a Finishing Tool Unit (피니싱 툴 유니트의 에어 임펠러 설계에 관한 연구)

  • Choi, Hyun-Jin;Kang, Ik-Soo;Lee, Seung-Yong;Jang, Eun-Sil;Park, Sun-Myung;Choi, Seong-Dae
    • Korean Journal of Computational Design and Engineering
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    • v.20 no.3
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    • pp.312-319
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    • 2015
  • The grinding and furbishing process as the finishing process for molds include the works such as the grinding, buffing, lapping and polishing among others. A finishing tool unit is applied to this finishing process for the burr, lapping, polishing and others of molds. A finishing tool unit can carry out the flexible machining, depending on the machining allowance for objects to be cut on the basis of the instrumental driving mechanism which enables the up, down, left and right floating, which is applied in link with the dedicated cutters and robot machining systems. This study selected the shape to increase the rotatory force of an impeller when air is discharged during the driving of a finishing tool unit, and reflected it to the impeller designing. In addition, the study analyzed each flow velocity and pressure distribution per air pressurization value and finally analyzed the rotating torque to suggest the optimal conditions in designing impellers.

A Study on the Control Method for the Tool Path of Aspherical Surface Grinding and Polishing (비구면 연삭 및 연마를 위한 공구 경로 제어에 관한 연구)

  • Kim, Hyung-Tae;Yang, Hae-Jeong;Kim, Sung-Chul
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.1 s.178
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    • pp.113-120
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    • 2006
  • This paper proposed the control algorithm fur aspheric surface grinding and was verified by the experiment. The functions of the algorithm were simultaneous control of the position and interpolation of the aspheric curve. The non-linear formula of the tool position was derived from the aspheric equations and the shape of the tool. The function was partitioned by an certain interval and the control parameters were calculated at each control section. The movement in a session was interpolated with acceleration and velocity. The position error was feed-backed by rotary encorder. The concept of feedback algorithm was correcting position error by increasing or decreasing the speed. In the experiment, two-axis machine was controlled to track the aspheric surface by the proposed algorithm. The effect of the control and process parameters was monitored. The result showed that the maximum tracking error was under sub-micro level for the concave and convex surfaces.