• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.1009-1014
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• 1997

The small material removal rate of elastic emission machinong (EEM) becomes a serious problem due to using fine powder particles for obtaining finished of high quality. If a cylindrical polyurethane-wheel is used as a tool for accelerating powder particles, the efficiency of machining may be increased through enlarging the machining regionand increasing the surface velocity of the wheel. If these analyicl results are compared with experimental ones, characteristics of EEM using polyurethan-wheel can be clarified. In this study, effects of EEM using cylindrical polyurethane-wheel on the surface roughness and the material removal rate were verified through polishing of the brittle material under various conditions. The high-efficient polishing of silicon wafer has been also carried out using this method.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.3
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• pp.196-200
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• 2009

Lithium niobate ($LN:LiNbO_3$) is a compound of niobium, lithium and oxygen. The characteristics of LN are piezoelectricity, ferroelectricity and photoelectricity, and which is widely used in surface acoustic wave (SAW). To manufacture LN devices, the LN surface should be a smooth surface and defect-free because of optical property, but the LN material is processed difficult b traditional processes such as grinding and mechanical polishing (MP) because of its brittleness. To decrease defects, chemical mechanical polishing (CMP) was applied to the LN wafer. In this study, the suitable parameters such as down force and relative velocity, were investigated for the LN CMP process To improve roughness, the LN CMP was performed using the parameters that were the highest removal rate among process parameters. And, evaluation of optical property was performed by the optical reflectance.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.4
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• pp.51-56
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• 2006

This paper proposes a control algorithm, which is verified experimentally, for aspherical surface grinding and polishing. The algorithm provides simultaneous control of the position and interpolation of an aspheric curve. The nonlinear formula for the tool position was derived from the aspheric equation and the shape of the tool. The function was partitioned at specific intervals and the control parameters were calculated at each control section. The position, acceleration, and velocity at each interval were updated during the process. A position error feedback was introduced using a rotary encoder. The feedback algorithm corrected the position error by increasing or decreasing the feed speed. In the experimental verification, a two-axis machine was controlled to track an aspherical surface using the proposed algorithm. The effects of the control and process parameters were monitored. The results demonstrated that the maximum tracking error with tuned parameters was at the submicron level for concave and convex surfaces.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.497-498
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• 2006

Tribological properties of a Magneto-Rheological(MR) fluid in a polishing process are studied. For this polishing process, abrasive wear model is proposed as a function of shear force, normal force and actual mean velocity of MR particles at workpiece surface. Experimental conditions are changed by varying the gap distance between workpiece and tool and the rotational speed of tool. From the experimental results, a modified Stribeck curve is obtained, and the friction coefficient turns out to have linear relationship with a modified Sommerfeld number. The validity of the wear model is supported by additional experiments performed for measuring material removal rates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1283-1287
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• 2004

The design rules are being more strict with requirement of operation speed and development of IC industry. For this reason, required minimum line-width has been narrowed under sub-micron region. As the length of minimum line-width is narrowed, local and global planarization are being prominent. CMP(Chemical-Mechanical Polishing), one of the planarizarion technology, is a process which polishes with the ascent of chemical reaction and relative velocity between pad and wafer without surface defects. CMP is performed with a complex interaction among many factors, how CMP has an interaction with such factors is not evident. Accordingly, the studies on this are still carrying out. Therefore, an examination of the CMP phenomena and an accurate understanding of compositive factors are urgently needed. In this paper, we will consider of the relations between the effects of temperature which influences many factors having an effect on polishing results and the characteristics of CMP in order to understand and estimate the influence of temperature. Then, through the interaction of shown temperature and polishing result, we could expect to boost fundamental understanding on complex CMP phenomena.

• Current Research on Agriculture and Life Sciences
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• v.32 no.2
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• pp.91-97
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• 2014

In order to analyze the structural factors and milling performance of farmhouse rice milling machines in Korea, this study classified 29 models of the farmhouse rice milling machines sold in Korea into hulling and polishing devices, examined the structural features for each device, and then analyzed the performance factors based on the results. With regard to hulling devices, impeller rotational speed was investigated as a major structural factor. The hulling devices at an impeller rotational speed of 4,800 rpm were most frequently used and accounted for the largest proportion, 65.5%. At this rotational speed, the hulling rate was the highest, 99.45%, and the brown rice cracked rate was the lowest. Thus, the best impeller rotational speed for the hulling performance was analyzed as 4,800 rpm (p<0.05). With regard to polishing devices, rotor speed was investigated as a major structural factor. The polishing devices with a rotor linear velocity of 2 m/s were most commonly used and accounted for the largest proportion, 60.1%. At this linear velocity, the hulling rate was the highest with 75.07%, and the dispassion rate and broken rice rate were the lowest with 0.02 and 7.06%, respectively. Thus, the best rotor linear velocity for the polishing performance was analyzed as 2 m/s (p<0.05).

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.980-986
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive, the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, Ist, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the effect of the wheel path density and relative velocity on the characteristic of ground wafer in in-feed grinding with cup-wheel. It seems that the variation of the parameters in radial direction of wafer results in the non-uniform surface quality over the wafer. So, in this paper, the geometric analysis on grinding process is carried out, and then, the effect of the parameters on wafer surface quality is evaluated

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.6
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• pp.1146-1150
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• 2009

Cadmium telluride (CdTe) is one of the most attractive photovoltaic materials due to its low cost, high efficiency and stable performance in physical, optical and electronic properties. Few researches on the influences of uniform surface on the photovoltaic characteristics in large-area CdTe solar cell were not reported. As the preceding study of the effects of thickness-uniformity on the photovoltaic characteristics for the large-area CdTe thin film solar cell, chemical mechanical polishing (CMP) process was investigated for an enhancement of thickness-uniformity. Removal rate of CdTe thin film was 3160 nm/min of the maximum value at the 200 $gf/cm^2$ of down force (pressure) and 60 rpm of table speed (velocity). The removal rate of CdTe thin film was more affected by the down force than the table speed which is the two main factors directly influencing on the removal rate in CMP process. RMS roughness and peak-to-valley roughness of CdTe thin film after CMP process were improved to 96.68% and 85.55%, respectively. The optimum process condition was estimated by 100 $gf/cm^2$ of down force and 60 rpm of table speed with the consideration of good removal uniformity about 5.0% as well as excellent surface roughness for the large-area CdTe solar cell.

• Korea-Australia Rheology Journal
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• v.14 no.2
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• pp.63-70
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• 2002

Chemical mechanical planarization (CMP) is the polishing process enabled by both chemical and mechanical actions. CMP is used in the fabrication process of the integrated circuits to achieve adequate planarity necessary for stringent photolithography depth of focus requirements. And recently copper is preferred in the metallization process because of its low resistivity. We have studied the effects of chemical reaction on the polishing rate and surface planarity in copper CMP by means of numerical simulation solving Navier-Stokes equation and copper diffusion equation. We have performed pore-scale simulation and integrated the results over all the pores underneath the wafer surface to calculate the macroscopic material removal rate. The mechanical abrasion effect was not included in our study and we concentrated our focus on the transport phenomena occurring in a single pore. We have observed the effects of several parameters such as concentration of chemical additives, relative velocity of the wafer, slurry film thickness or ash)tract ratio of the pore on the copper removal rate and the surface planarity. We observed that when the chemical reaction was rate-limiting step, the results of simulation matched well with the experimental data.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.481-482
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• 2006

Chemical-mechanical polishing, the dominant technology for LSI planarization, is trending to play an important function in micro-electro mechanical systems (MEMS). However, MEMS CMP process has a couple of different characteristics in comparison to LSI device CMP since the feature size of MEMS is bigger than that of LSI devices. Preliminary CMP tests are performed to understand material removal rate (MRR) with blanket wafer under a couple of polishing pressure and velocity. Based on the blanket CMP data, this paper focuses on the consumable approach to enhance MEMS CMP by the adjustment of slurry and pad. As a mechanical tool, newly developed microstructured (MS) pad is applied to compare with conventional pad (IC 1400-k Nitta-Haas), which is fabricated by micro melding method of polyurethane. To understand the CMP characteristics in real time, in-situ friction force monitoring system was used. Finally, the topography change of poly-si MEMS structures is compared according to the pattern density, size and shape as polishing time goes on.