• Title/Summary/Keyword: Polishing rate

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Rotational Stability and Lubrication State Evaluation of the Polishing Head for High Speed Polishing (폴리싱 고속화를 위한 연마헤드의 회전 안정성과 윤활 상태 평가)

  • Lee, Hocheol;Choi, Minseok
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.25 no.4
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    • pp.301-306
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    • 2016
  • High speed polishing can kinematically increase the polishing removal rate by using the conventional Preston equation, especially for hard substrates such as sapphire or diamond. However, high speed effects should be clarified beforehand considering the lubrication state and process parameter variations. In this paper, we developed a polishing experimental method and apparatus to determine the lubrication state by measuring the real time friction coefficient using two load cells. Through experiments, we obtained a boundary lubrication state above 0.35 of the friction coefficient by using low table speed and high polishing load, indicating a synchronized stable behavior in polishing head rotation. However, larger Stribeck indexes by a high speed above 200 rpm can generate a hydrodynamic lubrication state below 0.25 of the low friction coefficient. This causes the polishing head rotation to stop. A forced and synchronized head rotation is required for high speed polishing.

Application of Hard Porous Pad in Metal CMP Process (금속 CMP 공정시 경질 다공성 패드의 적용)

  • 김상용;김남훈;김인표;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.5
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    • pp.385-389
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    • 2003
  • There are four main components of the CMP process: polishing pad, slurry, elastic supporter, and pad conditioner. The polishing pad is an essential component to the reproducibility of polishing uniformity in CMP process. However, the polishing pad in recently using metal CMP raised the several points of high cost caused by the increase of cycle time and the many usage of slurry. It is necessary to develop the novel polishing pad which would lead the cost reduction by the higher pad life-cycle, minimized cycle time and lower slurry usage. The characteristics of polishing pad were studied on the effects of different sets of the Polishing pad, which can be applied to metal chemical mechanical polishing process for global planarization of multilevel interconnection structure. The main purpose of this experiment is cost reduction by the increase of pad life-time, the decrease of cycle time and the lower usage of slurry through the specific hard porous structured pad design. It is confirmed that the novel polishing pad made the slurry usage decrease to 60% as well as the pad life-time increase twice with the 25% improvement of removal rate. The polishing time could be decreased and it also helped the cycle time to diminish. It can be expected that this results will help both the process throughput and the device yield to be improved.

A Study on Surface Magnetic Abrasive Polishing (자기연마장치를 이용한 폴리싱)

  • 류한선;고태조;김희술;이상욱
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.1836-1839
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    • 2003
  • This paper describes the surface polishing characteristics of a flat and free surface ferromagnetic substance(SM45C) that magnetic abrasive polishing processed. The effects of the various working factors on the surface roughness are clarified by experiments respectively, such as magnetic flux density. rotation speed of magnetic head. working gap, feed rate of workpiece. diameter of magnetic abrasives. and shape of workpiece. On the basis of these experiments, the polishing mechanism is discussed and the characteristics of the polishing process are described. In addition, it is found experimentally that die & mold surfaces are also polished precisely by this process

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Study on Effect of KCl Concentration on Removal Rate in Chemical Mechanical Polishing of Sapphire (염화칼륨 농도에 따른 사파이어 기판 CMP에 관한 연구)

  • Park, Chuljin;Kim, Hyoungjae;Jeong, Haedo
    • Tribology and Lubricants
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    • v.33 no.5
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    • pp.228-233
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    • 2017
  • Chemical Mechanical Polishing of chemically stable sapphire substrates is dominantly affected by the mechanical processing of abrasives, in terms of the material removal rate. In this study, we investigated the effect of electrostatic force between the abrasives and substrate, on the polishing. If potassium chloride (KCl) is added to slurry, water molecules are decomposed into $H^+$ and $OH^-$ ions, and the amount of ions in the slurry changes. The zeta potential of the abrasives decreases with an increase in the amount of $H^+$ ions in the stern layer; consequently, the electrostatic force between the abrasives and substrate decreases. The change in zeta potential of abrasives in the slurry is affected by the slurry pH. In acidic zones, the amount of ions bound to the abrasives increases if the amount of $H^+$ ions is increased by adding KCl. However, in basic zones, there is no change in the corresponding amount. In acidic zones, zeta potential decreases as molar concentration of potassium increases; however, it does not change significantly in basic zones. The removal rate tends to decrease with increase in molar amount of potassium in acidic zones, where zeta potential changes significantly. However, in basic zones, the removal rate does not change with zeta potential. The tendencies of zeta potential and that of the frictional force generated during polishing show strong correlation. Through experiments, it is confirmed that the contact probability of abrasives changes according to the electrostatic force generated between the abrasives and substrate, and variation in removal rate.

Development of an Injection Nozzle and an Electromagnet Module for a MR Fluid Jet Polishing System (MR Fluid Jet Polishing 시스템을 위한 분사노즐 및 전자석 모듈 개발)

  • Lee, Jung-Won;Cho, Yong-Kyu;Ha, Seok-Jae;Shin, Bong-Cheol;Cho, Myeong-Woo
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.21 no.5
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    • pp.767-772
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    • 2012
  • Generally, abrasive fluid jet polishing system has been used for polishing of complex shape or freeform surface which has steep local slopes. In the system, abrasive fluid jet is injected through a nozzle at high pressure; however, it is inevitable to lose its coherence as the jet exits a nozzle. This problem causes incorrect polishing results because of unstable and unpredictable workpiece material removal at the impact zone. In order to solve this problem, MR fluid jet polishing method has been developed using a mixture of abrasive and MR fluid which can maintain highly collimated and coherent jet by applied magnetic field. Thus, in this study, an injection nozzle and an electromagnetic module, most important parts in the MR polishing system, were designed and verified by magnetic field and flow analysis. As the results of experiments, it can be confirmed that stable fluid jets for polishing were generated since smooth W-shapes and uniform spot size were observed regardless of standoff distance changes.

Polishing Characteristics of Pt Electrode Materials by Addition of Oxidizer (산화제 첨가에 따른 백금 전극 물질의 연마 특성)

  • Ko, Pil-Ju;Kim, Nam-Hoon;Lee, Woo-Sun
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1384-1385
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    • 2006
  • Platinum is a candidate of top and bottom electrode in ferroelectric random access memory and dynamic random access memory. High dielectric materials and ferroelectric materials were generally patterned by plasma etching, however, the low etch rate and low etching profile were repoted. We proposed the damascene process of high dielectric materials and ferroelectric materials for patterning process through the chemical mechanical polishing process. At this time, platinum as a top electrode was used for the stopper for the end-point detection as Igarashi model. Therefore, the control of removal rate in platinum chemical mechanical polishing process was required. In this study, an addition of $H_{2}O_{2}$ oxidizer to alumina slurry could control the removal rate of platinum. The removal rate of platinum rapidly increased with an addition of 10wt% $H_{2}O_{2}$ oxidizer from 24.81nm/min to 113.59nm/min. Within-wafer non-uniformity of platinum after chemical mechanical polishing process was 9.93% with an addition of 5wt% $H_{2}O_{2}$ oxidizer.

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Stability and Improvement of Polishing Pad in W CMP (W CMP 공정에서의 연마패드표면 안정화 상태와 그 개선)

  • Park, Jae-Hong;Kinoshita, Masaharu;Yoshida, Koichi;Matsumura, Shinichi;Jeong, Hae-Do
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.12
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    • pp.1027-1033
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    • 2007
  • In this research, the polishing pad for W CMP has been analyzed to understand stabilization of polishing performance. For stabilization of process, the polishing pad condition is one of important factors. The polishing pad plays a key role in polishing process, because it contact with reacted surface of wafer[1]. The physical property of pad surface is ruled by conditioning tool which makes roughness and profile of pad surface. Pad surface affects on polishing performance such as RR(Removal Rate) and uniformity in CMP. The stabilized pad surface has stable roughness. And its surface has high level of wettability which can increase the probability of abrasive adhesion on pad. The result of this research is that the reduction of break-in and dummy polishing process were achieved by artificial machining to make stable pad surface. In this research, urethane polishing pad which is named IC pad(Nitta-Haas Inc.) and has micro pore structure, is studied. Because, this type of pad is the most conventional type.

Optimization of Polishing Conditions for Anodized Inner Surfaces in Large Hydraulic Devices (아노다이징 처리된 대형 유압장치의 내면에 대한 연마 조건의 최적화)

  • Choi, Su-Hyun;Cho, Young-Tae
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.18 no.7
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    • pp.14-21
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    • 2019
  • Large-diameter hydraulic devices such as the hydraulic reservoir in aircraft that serves to balance the hydraulic pressure in the various hydraulic devices in the cabin and to store hydraulic oil are operated by the internal piston systems. However, since this operates in an environment with high temperature and humidity, it may cause the inner surface to flake during its operation. Therefore, an anodizing surface treatment is applied to improve the corrosion resistance, abrasion resistance, and smooth operation. However, anodizing increases the surface roughness. Accordingly, the polishing process that improves the surface roughness after anodizing is important. However, the existing polishing process is performed manually, which results in an inefficient process. Therefore, in this study, we selected the optimum polishing conditions for effective polishing using the experimental design to improve the polishing process for the $Al_2O_3$ film that forms after anodization. Through experiments, we confirmed that the surface uniformity after polishing was superior as the feed rate was slower when the same polishing time had been applied.

A Magnetorheological Polishing System (자기유변유체를 이용한 연마가공 시스템)

  • 김영민;신영재;이응숙;이동주
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2003.10a
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    • pp.324-328
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    • 2003
  • The Magnetoeheological fluid has the properties that it's viscosity has dramastic changed under some magnetic fields therefore, Magnetorhlogical fluids has been used for micro polishing of the micro part( for example, a aspherical surface in a micro lens). The polishing process may appears as follows. A part rotating on the spindle is brought into contact with an Magnetorhological finshing(MRF) fluids which is set in motion by the moving wall. In the region where the part and the MRF fulid ate brought into contact, the applied magnetic field creates the conditions necessary for the material removal from the part surface. The material removal takes place in a certain region contacting the surface of the part which can be called the polishing spot or zone. The polishing mechanism of the material removal in the contact zone is considered as a process governed by the particularities of the Bingham flow in the contact zone. Resonable calculated and experimental magnitudes of the material removal rate f3r glass polishing lends support the validity of the approach.

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