• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.53-57
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• 2007

In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an $IC1000_{TM}$ K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperature increased from 26.4 to $38.4\;^{\circ}C$ with the increase in polishing power. The ILD removal rate also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rate deviated from Prestonian behavior at the highest $p{\times}V$ polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rate. In this model, transient flash heating temperature is assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest $p{\times}V$ polishing condition and indicates that the polishing process was mechanical limited in the low $p{\times}V$ polishing region and became chemically and mechanically balanced with increasing polishing power.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.98-102
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• 2007

The stability of slurry and removal rate during recycling of colloidal silica slurry was evaluated in silicon wafer polishing. The particle size distribution, pH, and zeta potential were measured to investigate the stability of colloidal silica. Large particles appeared as recycling time increased while average size of slurry did not change. Large particles were identified by EDS(energy dispersive spectrometer) as foreign substances from pad or abraded silicon flakes during polishing. As the recycling time increased, pH of slurry decreased and removal rate of silicon reduced but zeta potential decreased inversely. Hence, it could be mentioned that decrease of removal rate is related to consumption of $OH^-$ ions during recycling. Attention should be given to the control of pH of slurry during polishing.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.167-172
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• 2006

Submicron colloidal silica coated with ceria were prepared by mixing of silica and nano ceria particles and modified by hydrothermal reaction. The polishing efficiency of the ceria coated silica slurry was tested over oxide film on silicon wafer. By changing the polishing pressure in the range of $140{\sim}420g/cm^2$ with the ceria coated silica slurries in $100{\sim}300nm$, rates, WIWNU and friction force were measured. The removal rate was in the order of 200, 100, and 300 nm size silica coated with ceria. It was known that the smaller particle size gives the higher removal rate with higher contact area in Cu slurry. In the case of oxide film, the indentation volume as well as contact area gives effect on the removal rate depending on the size of abrasives. The indentation volume increase with the size of abrasive particles, which results to higher removal rate. The highest removal rate in 200 nm silica core coated with ceria is discussed as proper combination of indentation and contact area effect.

• Tribology and Lubricants
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• v.33 no.3
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• pp.106-111
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• 2017

Sapphire is an anisotropic material with excellent physical and chemical properties and is used as a substrate material in various fields such as LED (light emitting diode), power semiconductor, superconductor, sensor, and optical devices. Sapphire is processed into the final substrate through multi-wire saw, double-side lapping, heat treatment, diamond mechanical polishing, and chemical mechanical polishing. Among these, chemical mechanical polishing is the key process that determines the final surface quality of the substrate. Recent studies have reported that the material removal characteristics during chemical mechanical polishing changes according to the crystal orientations, however, detailed analysis of this phenomenon has not reported. In this work, we carried out chemical mechanical polishing of C(0001), R($1{\bar{1}}02$), and A($11{\bar{2}}0$) substrates with different sapphire crystal planes, and analyzed the effect of crystal orientation on the material removal characteristics and their correlations. We measured the material removal rate and frictional force to determine the material removal phenomenon, and performed nano-indentation to evaluate the material characteristics before and after the reaction. Our findings show that the material removal rate and frictional force depend on the crystal orientation, and the chemical reaction between the sapphire substrate and the slurry accelerates the material removal rate during chemical mechanical polishing.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.10a
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• pp.319-323
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• 2002

Recently, new polishing system which was made by magnetic intelligent compound (MAGIC) was invented and, the study is going on for practical use the analysis of factors, that is, the kind of polishing grain, composition ratio of wheel elements, machining frequency, polishing pressure, which the main influence for polishing efficiency are the first step. In this study, analyzed influence of wheel raw material composition ratio on surface roughness.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.8
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• pp.55-61
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• 2009

Recently, many studies are being conducted to realize high quality polishing technology, but because of high dependence on field experience and insufficient research for ultra-precision polishing technology, it is difficult to establish standardization of polishing conditions. The purpose of this study is to determine high-efficiency superfinishing conditions which are applicable in the field of machining. To achieve this, we have a developed a superfinishing device and conducted a series of polishing experiments for mechanical materials such as SM45C, Brass, Al7075, and Ti, from the perspective of oscillation speed, the rotational speed of the workpiece, contact roller hardness, contact pressure, and feed rate. From the experimental results, it was confirmed that the polishable superfinishing conditions range and efficient feed rate of polishing film can be determined.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.568-574
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• 2000

We have been optimized tungsten(W) plug CMP(chemical mechanical polishing) characteristics using two different kinds of component of slurry and two different kinds of pad which have different hardness. The comparison of oxide film roughness on around W plug after polishing has been carried out. And W plug recess for consumable sets and dishing effect at dense area according to the rate of over-polishing has been investigated. Also the analysis of residue on surface after cleaning have been performed. As a experimental result we have concluded that the consumable set of slurry A and hard pad was good for W plug CMP process. After decreasing the rate of chemical reaction of silica slurry and adding two step buffering we could reduce the expanding of W plug void however we are still recognizing to need a more development for those kinds of CMP consumables.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.27-33
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• 2004

Electro-theological fluid is recently used for the micro polishing of 3-dimensional micro-aspherical lens. It's also used for polishing small area defects on the wide flat wafer. Since ER fluid shows a behavior of viscosity changing under certain electric fields. micro polishing efficiency may be enhanced for certain cases. In this paper, a perfluorinated carbonyl fluoride oil based ER fluids was used to improve surface polishing rate and submicron-scale accuracy. As the polishing electrodes, micro size cylindrical tools had been used for maximizing the electric field. An experimental device, which was applied for micro polishing a number of wafers of 4inches in size and other workpiece. was made on a precision polishing system. It consisted of a steel electrode. a wafer fixture. l0㎃ current and DC 5㎸ power supply unit, and a controller unit. From the Experiments. the ER fluid is applicable for micro polishing of small parts.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.950-955
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• 2001

For the development of an ultra-precision CNC polishing system including on-machine measurement system, we study a corrective polishing algorithm. We analyze and test the unit removal profiles for a ball type polishing tool. Using these results we calculate dwell time distributions and residual errors for a target removal shape. We use the polishing simulation method and feed rate calculation method for the dwell time calculation. We test corrective polishing algorithm with an optical glass. The target removal shape is a sine wave that has amplitude 0.3 micro meters. We find this polishing process has a machining resolution of nanometer order and is effective for sub-micrometer order machining. This result will be used for the software development of the CNC polishing system.

• Journal of the korean academy of Pediatric Dentistry
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• v.33 no.4
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• pp.633-642
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• 2006

This study evaluated the surface changes such as surface average roughness(RA), surface free energy(SFE) and wear depth among groups treated with surface penetrating sealant(Fortify, Biscover), non treated polishing group before and after tooth-brushing, analyzing the influence of the sealants in filling of surface microdefects formed during the finishing and polishing procedures of composite resin. Results were as follow(p= 0.05) : 1. Ra was increased Biscover. Fortify and Polishing group. Before abrasion and in 6 months, all groups were statistically significant. In 1 month, 2 months and 3 months no statistical difference was noticed between Fortify and Biscover 2. SFE of Polishig and Biscover group. Fortify and Biscover group were statistically significant before abrasion. SFE of Polishing and Fortify group was statistically significant in 1 month. No statistical difference was noticed among groups in 2 months. SFE of Fortify and Biscover group was statistically significant in 3 months. Polishing and Fortify group, Fortify and Biscover group were statistically significant in 6 months. 3, Wear rate between Polishing and Fortify group was statistically significant in only 1 month. Wear rate between Polishing and Biscover group was statistically different in each month except for 2 month and so it was between Fortify and Biscover group. Considering film thickness of Fortify and Biscover, Fortify almost discappeared after 2 months and Biscover did after 6 months.