• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.651-652
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• 2005

Chemical mechanical polishing (CMP) has emerged as the planarization technique of choice in integrated circuit manufacturing. Especially, polishing pad is considered as one of the most important consumables because of its properties. Generally, conventional polishing pad has irregular pores and asperities. If conditioning process is except from whole polishing process, smoothing of asperities and pore glazing occur on the surface of the pad, so repeatability of polishing performances cannot be expected. In this paper, CMP pad with microstructure was made using micro-molding technology and repeatability of ILD(interlayer dielectric) CMP performances and was evaluated.

• Journal of IKEEE
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• v.18 no.4
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• pp.456-462
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• 2014

Scintillators were polished in four steps using polishing paper, to reduce the optical loss occurring at their cross section when radiation detectors are fabricated with plastic scintillators. We studied the correlation between the polishing steps and detection efficiency and assessed the detection characteristics that are dependent in the polishing steps. Our results showed that the detection efficiency increased by approximately 7.75 times for a detector that used a scintillator polished in four steps, compared to a detector that used an depolished scintillator. For detectors fabricated using scintillators polished in different steps, better detection characteristics were obtained in terms of the activity, distance, and location of radiation, compared to detectors fabricated with an depolished scintillator.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.5
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• pp.795-799
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• 2013

This paper describes a novel hybrid surface polishing process combining non-traditional electrochemical polishing (ECP) with external artificial ultrasonic vibration. The purpose of this study is to develop an easier method for improving stainless steel surfaces. To this end, vibration electrochemical polishing (VECP), a novel ultrasonic manufacturing process, for enhancing electrochemical reaction and surface quality compared with that achieved using conventional ECP is suggested. In addition, for finding the optimized experimental conditions, the two methods are compared under various current densities. Localized roughness of the work material is measured with atomic force microscopy (AFM) and scanning electron microscopy (SEM) for obtaining detailed surface information.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.9 no.2
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• pp.26-32
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• 2010

This paper reports some experimental result in grinding and polishing of silicon cathodes used in semiconductor manufacturing process. Cup shape diamond core wheels were used in experiments and the radial and tangential grinding forces were measured with surface roughness. In polishing experiments, flat type and donut type wool polishing tools were tested. The experimental results indicate that the grinding forces are proportional to the material removal rates and the surface roughness are inversely proportional to the spindle speed. The surface roughness of polished Si decreases with polishing time and higher spindle speed.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.5
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• pp.616-621
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• 2010

New type of the base material of the light-emitting diode requires copper wafer in view of heat and electrical conductance. Therefore, polishing process of the substrate level is needed to get a nanometer level of surface roughness as compared with pattern structure of nano-size in the semiconductor industry. In this paper, a series of lapping and polishing technique is shown for the rough and deflected copper substrate of thickness 3mm. Lapping by sand papers tried air cooling method. And two steps of polishing used the diamond abrasives and the $Al_2O_3$ slurry of size 100mm considering the residual scratch. White-light interferometer proved successfully a mirror-like surface roughness of Ra 6nm on the area of $0.56mm{\times}0.42mm$.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2001.11a
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• pp.8-13
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• 2001

In recently, polishing tile(porcelain homogeneous polished tile) was used in the construction field as a finishing material. But, there happened some problems such as tile exfoliation by construction condition in early ages. Also, in the dry wall system which used to lightweight wall, for use of polishing tile on dry wall, the examination of adhesive stability of polishing tile is needed. In this Paper, adhesive strength of Polishing tile was investigated by tile bond types on gypsum board and non asbestos board coated by tar-urethane and polymer modified cementitious waterproofing membrane(Series I). Then, the effect of heat stress and vibration was estimated on gypsum and non asbestos board(Series II).

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.8 no.1
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• pp.77-82
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• 2009

This paper reports a kinematic analysis and experimental results for the polishing process of G7 LCD glass. A kinematic analysis for the relative motion of the upper plate and lower plate has been done and computer simulation has been programmed. A series of polishing experiments has also been carried out and compared with analytical data. The experimental results agreed well with analytical ones. The experimental results indicate that the polishing removal is proportional to the relative speed and pressure.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.128-132
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• 2005

In this paper, we have investigated the characteristics of the magnetic abrasive using sludge on polishing of internal finishing of seamless stainless steel (STS304) tube applying magnetic abrasive polishing. Either white alumina (WA) or green carborundum (GC) grain was used to resin sludge at a low temperature, and the sludge of magnetic abrasive powder was synthesized and crushed into 200 meshes. Surface roughness was measured before and after polishing, and more than $40\%$ of improvement of surface roughness was achieved when WA grain was used under a specific condition. Even though some degree of surface roughness due to deeper scratches still exist, but the result showed a prospective magnetic abrasive polishing using sludge with WA or GC grains.

• Journal of the Semiconductor & Display Technology
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• v.10 no.3
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• pp.49-52
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• 2011

This paper shows the results of classical molecular dynamics modeling for the interaction between spherical nano abrasive and substrate in chemical mechanical polishing processes. Atomistic modeling was achieved from 3-dimensional molecular dynamics simulations using the Morse potential functions for chemical mechanical polishing. The abrasive dynamics was modeled by three cases, such as slipping, rolling, and rotating. Simulation results showed that the different dynamics of the abrasive results the different features of surfaces. The simulation concerning polishing pad, abrasive particles and the substrate has same results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.303-307
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• 2007

This paper investigated the effect of the pad buffing process on the material removal characteristics and pad stabilization during silicon chemical mechanical polishing. The pads surface were controlled by the buffing process using a buffer made by the sandpaper. The buffing process is based on abrasive machining by using a high speed sandpaper. The controlled pad by the buffing process show less deformation deviation and stable material removal rate during the CMP process. In addition, the controlled pad ensure better uniformity of removal rate than comparative pads. As a result of monitoring, the controlled pad by the buffing process demonstrated constant and stable friction force signals from initial polishing stage. Therefore, the tufting process could control the pad surface to be uniform and improve the performance of the polishing pad.