• 제목/요약/키워드: Polishing force

검색결과 179건 처리시간 0.024초

A Study on Pressure Distribution for Uniform Polishing of Sapphire Substrate

  • Park, Chul jin;Jeong, Haedo;Lee, Sangjik;Kim, Doyeon;Kim, Hyoungjae
    • Tribology and Lubricants
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    • 제32권2호
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    • pp.61-66
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    • 2016
  • Total thickness variation (TTV), BOW, and surface roughness are essential characteristics for high quality sapphire substrates. Many researchers have attempted to increase removal rate by controlling the key process parameters like pressure and velocity owing to the high cost of consumables in sapphire chemical mechanical polishing (CMP). In case of the pressure approach, increased pressure owing to higher deviation of pressure over the wafer leads to significant degradation of the TTV. In this study, the authors focused on reducing TTV under the high-pressure conditions. When the production equipment polishes multiple wafers attached on a carrier, higher loads seem to be concentrated around the leading edge of the head; this occurs because of frictional force generated by the combination of table rotation and the height of the gimbal of the polishing head. We believe the skewed pressure distribution during polishing to be the main reason of within-wafer non-uniformity (WIWNU). The insertion of a hub ring between the polishing head and substrate carrier helped reduce the pressure deviation. Adjusting the location of the hub ring enables tuning of the pressure distribution. The results indicated that the position of the hub ring strongly affected the removal profile, which confirmed that the position of the hub ring changes the pressure distribution. Furthermore, we analyzed the deformation of the head via finite element method (FEM) to verify the pressure non-uniformity over the contact area Based on experiment and FEM results, we determined the optimal position of hub ring for achieving uniform polishing of the substrate.

실리카 입자의 형상과 표면 특성이 산화막 CMP에 미치는 영향 (Effect of shape and surface properties of hydrothermaled silica particles in chemical mechanical planarization of oxide film)

  • 정정환;임형미;김대성;백운규;이승호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.161-161
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    • 2008
  • The oxide film of silicon wafer has been mainly polished by fumed silica, colloidal silica or ceria slurry. Because colloidal silica slurry is uniform and highly dispersed composed of spherical shape particles, by which the oxide film polished remains to be less scratched in finishing polishing process. Even though the uniformity and spherical shape is advantage for reducing the scratch, it may also be the factor to decrease the removal rate. We have studied the correlation of silica abrasive particles and CMP characteristics by varying pH, down force, and table rotation rate in polishing. It was found that the CMP polishing is dependent on the morphology, aggregation, and the surface property of the silica particles.

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화학기계적 연마에 의한 리튬니오베이트의 광학 특성에 관한 연구 (Study on Optical Properties of Lithium Niobate Using CMP)

  • 정석훈;김영진;이현섭;정해도
    • 대한기계학회논문집A
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    • 제33권3호
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    • pp.196-200
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    • 2009
  • Lithium niobate ($LN:LiNbO_3$) is a compound of niobium, lithium and oxygen. The characteristics of LN are piezoelectricity, ferroelectricity and photoelectricity, and which is widely used in surface acoustic wave (SAW). To manufacture LN devices, the LN surface should be a smooth surface and defect-free because of optical property, but the LN material is processed difficult b traditional processes such as grinding and mechanical polishing (MP) because of its brittleness. To decrease defects, chemical mechanical polishing (CMP) was applied to the LN wafer. In this study, the suitable parameters such as down force and relative velocity, were investigated for the LN CMP process To improve roughness, the LN CMP was performed using the parameters that were the highest removal rate among process parameters. And, evaluation of optical property was performed by the optical reflectance.

ITO 박막의 연마특성과 마찰력 신호와의 상관관계 (Relationship between Frictional Signal and Polishing Characteristics of ITO Thin Film)

  • 장원문;박기현;박범영;서헌덕;김형재;정해도
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2006년도 춘계학술대회 논문집
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    • pp.479-480
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    • 2006
  • The purpose of this paper is to investigate the relationship between CMP(Chemical Mechanical Polishing) characteristics of ITO thin film and friction signal by using the CMP monitoring system. Suba 400 pad and MSW2000 slurry of the Rohm & Haas Co. was used in this experiment to investigate the charateristics of ITO CMP. From this experiment, it is proven that the coefficient of friction is related to uniformity of the removal rate of the ITO thin film. Therefore, the prediction of polishing result would be possible by measuring friction signal.

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연마입자의 전기적 분극성을 이용한 초정밀연마기술 (Ultraprecision polishing for micro parts using electric polarization effect of abrasive particles)

  • 이승환;김욱배;이상조
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 추계학술대회 논문집
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    • pp.227-230
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    • 2002
  • New polishing technique for small parts has been tried out using the principle of particle electromechanics. Common fine abrasives such as alumina, diamond, silicon carbide are dielectric materials which are polarized under an electric field, and a non-uniform electric field makes abrasive particles translate along the field line. Using this principle, We make abrasive particles aggregate in the vicinity of the micro tool which is fir the surface finishing of a small part without contact with it. The behavior of particles is optically measured, and the machined depth of glass is examined.

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자기연마가공에서 마그네틱 어레이 테이블에 의한 극성 제어 (Control of Polarity by Magnetic Array Table in Magnetic Abrasive Polishing Process)

  • 강한성;김태희;곽재섭
    • 대한기계학회논문집A
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    • 제34권11호
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    • pp.1643-1648
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    • 2010
  • 비자성체의 자기연마 공정에서는 공작물 표면에 발생하는 자속밀도가 매우 낮아 자기연마입자에 작용하는 절삭력이 현저히 낮아진다. 따라서 공작물 반대편에 전자석을 설치하여 공작물 표면의 자속밀도를 효과적으로 증가 시킬 수 있다. 본 연구에서는 전자석 배열 테이블을 비자성체의 자기연마에 활용하기 위해 전자석 배열에 따른 자속밀도 및 극성변화에 대한 시뮬레이션 및 실험적 검증을 수행하였다. 그 결과 전자석이 같은 극성을 가질 때 보다 중심부분 전자석을 기준으로 주변 전자석이 반대의 극성을 가질 때 중심부분의 전자석에서 가장 높은 자속밀도를 가지는 것을 확인할 수 있었다.

화학적 기계 연마(CMP)에 의한 단결정 실리콘 층의 평탄 경면화에 관한 연구 (Planarization & Polishing of single crystal Si layer by Chemical Mechanical Polishing)

  • 이재춘;홍진균;유학도
    • 한국진공학회지
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    • 제10권3호
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    • pp.361-367
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    • 2001
  • CMP(Chemical Mechanical Polishing)는 반도체 소자 제조공정 중 다층 배선구조의 평탄 경면화에 널리 이용되고 있다. 차세대 웨이퍼로 각광받는 SOI(Silicon On Insulator) 웨이퍼 제조공정 중 웨이퍼 표면 미소 거칠기를 개선하기 위해서 본 논문에서는 여러 가지 가공변수(슬러리와 연마패드)에 따른 CMP 연마능률과 표면 미소 거칠기 변화에 대해 연구하였다. 결과적으로 연마능률은 슬러리의 입자 크기가 증가할수록 이에 따라 증가하였으며, 미소 거칠기는 슬러리의 연마입자보다는 연마패드에 영향이 더욱 지배적이다. AFM(Atomic Force Microscope)에 의한 평가에서 표면 미소 거칠기가 27 $\AA$ Rms에서 0.64 $\AA$ Rms로 개선됨을 확인할 수 있었다.

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산화막 CMP에서 리테이닝 링의 인서트 재질이 연마정밀도에 미치는 영향 (Effects of Insert Materials of Retaining Ring on Polishing Finish in Oxide CMP)

  • 박기원;박동삼
    • 한국기계가공학회지
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    • 제18권8호
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    • pp.44-50
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    • 2019
  • CMP is the most critical process in the manufacture of silicon wafers, and the use of retaining rings, which are consumable parts used in CMP equipment, is increasingly important. Since the retaining ring is made of plastic, it is not only weak in strength but also has the problem of taking a long time for the flattening operation of the ring itself performed before the CMP process, and of the imbalance of force due to bolt tightening causing uneven wear. In order to solve this problem, the retaining ring and the insert ring are integrally used, and the flatness of the retaining ring may be affected depending on the material of the insert ring. Also, the residual stress generated in the manufacturing process of the insert ring may cause distortion of the ring, which may adversely affect the precision polishing. In this study, when the insert ring is made of Zn or STS304, the thickness variation and the flatness of the retaining ring are compared and, finally, the material removal rate is analyzed by polishing the wafer by the oxide CMP process. Through these experiments, the effects of the insert ring material on the polishing accuracy of the wafers were investigated.

Color Stability and Surface Roughness of Single-Shade Composite Resin after Finishing and Polishing

  • Hyewon Shin;Haeni Kim;Minho Hong;Juhyun Lee
    • 대한소아치과학회지
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    • 제51권3호
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    • pp.197-207
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    • 2024
  • This study aims to evaluate the color stability and surface roughness of the single-shade composite resin after finishing and polishing for primary molars. A single-shade composite resin (OM, OMNICHROMA) and two multi-shade composite resins (FT, FiltekTM Z350XT; ES, ESTELITE® SIGMA QUICK) were included. The specimens were divided into three subgroups using different polishing methods: control, Sof-Lex XT, and Sof-Lex Diamond. For color stability tests, cavities were prepared on extracted primary second molars and restored with experimental composite resins. Each specimen was immersed in the coffee solution for 48 hours. The color difference of each specimen was calculated. For surface roughness tests, cylindrical specimens were crafted with experimental composite resins. Surface roughness was analyzed using an atomic force microscope and a scanning electron microscope. In the color stability tests, FT demonstrated a significantly lower ΔEab than ES among the control groups, but no significant differences were observed between the ΔEab values of OM and FT or OM and ES. Additionally, no significant differences were found between the Sof-Lex XT and Sof-Lex Diamond subgroups in the three composite groups. Moreover, no significant differences in the surface roughness were found between the three composite groups, regardless of the polishing methods. The single-shade composite resin demonstrated comparable color stability and surface roughness to that of the multi-shade composite resins regardless of the polishing methods used in restoring primary molars. The single-shade composite resin is expected to be applicable in clinical pediatric dentistry reducing chair time due to the easy shade matching procedures.