• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.31-34
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• 2000

It is very important to understand the correlation of between inter layer dielectric(ILD) CMP process and various facility factors supplied to equipment system. In this paper, the correlation between the various facility factors supplied to CMP equipment system and ILD CMP process were studied. To prevent the partial over-polishing(edge hot-spot) generated in the wafer edge area during polishing, we analyzed various facilities supplied at supply system. With facility shortage of D.I. water(DIW) pressure, we introduced an adding purified $N_2(PN_2)$ gas in polishing head cleaning station for increasing a cleaning effect. DIW pressure and PN2 gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. We estimated two factors (DIW pressure and PN2 gas) for the improvement of CMP process. Especially, we obtained a uniform planarity in patterned wafer and prohibited more than 90% wafer edge over-polishing. In this study, we acknowledged that facility factors supplied to equipment system played an important role in ILD-CMP process.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.435-437
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• 2002

Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries: and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.

• 한국공작기계학회논문집
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• 제15권1호
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• pp.32-38
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• 2006

The magnetic fluid polishing technique can polish the tool of complex shape, because the polishing method which polishes as compress the workpiece by the magnetism abrasives to arrange to the linear according to the line of magnetic force. Therefore, we producted the magnetic fluid polishing device in order that mirror like finishing processes the tool surface. In order to a polishing condition selection, polishing characteristic was estimated by polishing conditions which are magnetic flux density, polishing speed, grain size, magnetic fluid. The tool was polished to the selected polishing condition. The result to evaluate the polished tool's performance with the cutting force and tool wear, the polished tool's performance was improved compared with the tool not to polish.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 춘계학술대회 논문집
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• pp.950-955
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• 2001

For the development of an ultra-precision CNC polishing system including on-machine measurement system, we study a corrective polishing algorithm. We analyze and test the unit removal profiles for a ball type polishing tool. Using these results we calculate dwell time distributions and residual errors for a target removal shape. We use the polishing simulation method and feed rate calculation method for the dwell time calculation. We test corrective polishing algorithm with an optical glass. The target removal shape is a sine wave that has amplitude 0.3 micro meters. We find this polishing process has a machining resolution of nanometer order and is effective for sub-micrometer order machining. This result will be used for the software development of the CNC polishing system.

• 반도체디스플레이기술학회지
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• 제13권1호
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• pp.13-17
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• 2014

Since the semiconductor manufacturing requires the silicon wafers with extraordinary degree of surface flatness, the surface polishing of wafers from ingot cutting is an important process for deciding surface quality of wafers. The present study introduces the development of wafer polishing equipment and, especially, the wafer polishing head that employs the forced self-driving of installed silicon wafer as well as the wax wafer mounting technique. A series of wafer polishing tests have been carried out to investigate the effects of self-driving function in wafer polishing head. The test results for wafer planarization showed that the LLS counts and SBIR of polished wafer surfaces were generally improved by adopting the self-driven polishing head in wafer polishing stations.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1994년도 추계학술대회 논문집
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• pp.98-102
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• 1994

There are many difficulties in automatic polishing for die & mold surfaces. Even though the process has been studied in the past 15 years, it has not been achieved yet, but by the process of actual hand work of well-skilled workers. A new magentic assisted polishing process, which is one of the potential method for automation of surface finishing has been studied in the past 10 years by colleagues. The process has many merits, but on the other hand also has demerits, one being low efficiency of gridability by comparision with grinding wheel polish. Therefore, some attempts were tried to improve the grindability by adopting electropolishing, ultra-high speed milling, 5-axis controlled machine etc... most recently by collegues. This study also aims to improve the efficiency of polishing by introducing the easily-polished shape surface milling method equalizing the tool feed per tooth to the pick feed. This milling method was experimentally confirmed to have sufficient grindability to polish milled surface (with 10 .mu. mRmax surface roughness) into mirror surface (with 0.4 .mu. mRmax surface roughness).

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권1호
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• pp.28-32
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• 2003

In this paper, we have studied the in-situ end point detection (EPD) for direct chemical mechanical polishing (CMP) of shallow trench isolation (STI) structures without the reverse moat etch process. In this case, we applied a high selectivity $1n (HSS) that improves the silicon oxide removal rate and maximizes oxide to nitride selectivity Quite reproducible EPD results were obtained, and the wafer-to-wafer thickness variation was significantly reduced compared with the conventional predetermined polishing time method without EPD. Therefore, it is possible to achieve a global planarization without the complicated reverse moat etch process. As a result, the STI-CMP process can be simplified and improved using the new EPD method.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1084-1090
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• 1998

As device sizes are scaled down to submicron dimensions, planarization technology becomes increasingly important for both device fabrication and formation of multilevel interconnects. Chemical mechanical polishing (CMP) has emerged recently as a new processing technique for achieving a high degree of planarization for submicron VLSI applications. The polishing process has many variables, and most of which are not well understood. The factors determine the planarization performance are slurry and pad type, insert material, conditioning technique, and choice of polishing tool. Circuit density, pattern size, and wiring layout also affect the performance of a CMP planarization process. This paper presents the results of studies on CMP process window characterization for 0.35 micron process with 5 metal layers.

• 한국기계가공학회지
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• 제11권1호
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• pp.26-32
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• 2012

Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This study will report the characteristic of wafer according to processing time, machining speed and pressure which have major influence on the abrasion of Si wafer polishing. It is possible to evaluation of wafer abrasion by load cell and infrared temperature sensor. The characteristic of wafer surface according to processing condition is selected to use a result data that measure a pressure, machining speed, and the processing time. This result is appeared by the characteristic of wafer surface in machining condition. Through that, the study cans evaluation a wafer characteristic in variable machining condition. It is important to obtain optimal condition. Thus the optimum condition selection of ultra precision Si wafer polishing using load cell and infrared temperature sensor. To evaluate each machining factor, use a data through each sensor. That evaluation of abrasion according to variety condition is selected to use a result data that measure a pressure, machining speed, and the processing time. And optimum condition is selected by this result.

• 한국생산제조학회지
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• 제23권6호
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• pp.547-554
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• 2014

CVD SiC is a perfect material used for molds/dies in hot press molding of glass lens. In its fabrication process, nano-precision polishing is essential finally. For this purpose, a novel polishing method using MCF (Magnetic Compound Fluid) slurry is proposed. In this method, MCF slurry is supplied into a given gap between the workpiece and a MCF slurry carrier, and constrained within the polishing zone by magnetic forces from permanent magnet. In this paper, after an experimental rig used to actually realize the proposed method has been constructed, the fundamental polishing characteristics of CVD SiC such as the effects of process parameters including MCF slurry composition on work-surface roughness were experimentally investigated. As a result, nano-precision surface finish of CVD SiC was successfully attained with MCF slurry and the optimum process parameters for obtaining the smoothest work-surface were determined.