• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.101-102
• /
• 2006

PZT thin films, which are the representative ferroelectric materials in ferroelectric random access memory (FRAM), have some serious problem such as the imprint, retention and fatigue which ferroelectric properties are degraded by repetitive polarization. BL T thin film capacitors were fabricated by plasma etching, however, the plasma etching of BLT thin film was known to be very difficult. In our previous study, the ferroelectric materials such as PZT and BLT were patterned by chemical mechanical polishing (CMP) using damascene process to top electrode/ferroelectric material/bottom electrode. It is also possible to pattern the BLT thin film capacitors by CMP, however, the CMP damage was not considered in the experiments. The properties of BLT thin films were changed by the change of polishing pressure although the removal rate was directly proportional to the polishing pressure in CMP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.236-236
• /
• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.66-66
• /
• 2007

Lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for ferroelectric random access memory (FRAM) due to its higher remanant polarization and the ability to withstand higher coercive fields. We first applied the damascene process using chemical mechanical polishing (CMP) to fabricate the PZT thin film capacitor to solve the problems of plasma etching including low etching profile and ion charging. The $0.8{\times}0.8\;{\mu}m$ square patterns of silicon dioxide on Pt/Ti/$SiO_2$/Si substrate were coated by sol-gel method with the precursor solution of PZT. Damascene process by CMP was performed to pattern the PZT thin film with the vertical sidewall and no plasma damage. The polarization-voltage (P-V) characteristics of PZT capacitors and the current-voltage characteristics (I-V) were examined by change of process parameters. To examine the CMP induced damage to PZT capacitor, the domain structure of the polished PZT thin film was also investigated by piezoresponse force microscopy (PFM).

• Journal of the Korean Society for Precision Engineering
• /
• v.25 no.9
• /
• pp.32-37
• /
• 2008

Freestanding hydride vapor phase epitaxy grown GaN(Gallium Nitride) substrates subjected to various polishing methods were characterized for their surface and subsurface conditions, Although CMP(Chemical Mechanical Polishing) is one of the best approaches for reducing scratches and subsurface damages, the removal rate of Ga-polar surface in CMP is insignificant($0.1{\sim}0.3{\mu}m$/hr) as compared with that of N-polar surface, Therefore, conventional MP(Mechanical Polishing) is commonly used in the GaN substrate fabrication process, MP of (0001) surface of GaN has been demonstrated using diamond slurries with different abrasive sizes, Diamond abrasives of size ranging from 30nm to 100nm were dispersed in ethylene glycol solutions and mineral oil solutions, respectively. Significant change in the surface roughness ($R_a$ 0.15nm) and scratch-free surface were obtained by diamond slurry of 30nm in mean abrasive size dispersed in mineral oil solutions. However, MP process introduced subsurface damages confirmed by TEM (Transmission Electronic Microscope) and PL(Photo-Luminescence) analysis.

• Tribology and Lubricants
• /
• v.11 no.5
• /
• pp.156-161
• /
• 1995

The subsurface damaged layer in ultraprecisison machined single crystal Ge was examined by ion channeling. Single crystal Ge surfaces were prepared by chemo-mechanical polishing, mechanical polishing with 1/4 gm diamond abrasive, single point diamond turning and ultraprecision orthogonal flycutting. The extent of subsurface lattice disorder was compared to the crystal's orginal surface quality. Ion channeling is seen to be useful for quantitative measure of lattice disorder in finely finished surfaces.

• Tribology and Lubricants
• /
• v.26 no.4
• /
• pp.219-223
• /
• 2010

Despite the increasing need of nanometer-scale accuracy in abrasive machining using ultrasmall particles such as abrasive jet and chemical mechanical polishing(CMP), the process mechanism is still unknown. Based on the background, research on the effects of various process parameters on the machined surface at abrasive machining was motivated and performed by using finite element analysis where the effect of slurry fluid flow involved. The effect of particle shape on the machined surface during particle-surface collision was discussed in this paper. The results from FEA simulation revealed that any damage or defect generation on machined surface by the impact may occur only if the particle has enough impact energy. Therefore, it could be concluded that generation of the defects and damage on the wafer surface after CMP process was mainly due to direct contact of the 3 bodies, i.e., pad-particle-wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.25-28
• /
• 2001

Recently, STI(Shallow Trench Isolation) process has attracted attention for high density of semiconductor device as a essential isolation technology. Without applying the conventional complex reverse moat process, CMP(Chemical Mechanical Polishing) has established the Process simplification. However, STI-CMP process have various defects such as nitride residue, torn oxide defect, damage of silicon active region, etc. To solve this problem, in this paper, we discussed to determine the control limit of process, which can entirely remove oxide on nitride from the moat area of high density as reducing the damage of moat area and minimizing dishing effect in the large field area. We, also, evaluated the reliability and reproducibility of STI-CMP process through the optimal process conditions.

• Journal of Periodontal and Implant Science
• /
• v.30 no.2
• /
• pp.443-455
• /
• 2000

The aim of periodontal therapy is a removal of a bacterial plaque butthe instrumentation for plaque control has two nature : removal of a bacterial plaque and increase of surface roughness. Complication of instrumentation is enable to damage to the root surface and artificial crown. Therefore this study was conducted to evaluate the effects of repeated instrumentation on the marginal portion of artificial crown. Fifteen proximal surfaces of ten extracted periodontally diseased maxillary first molars were used. The finish line was placed on the root surface, and then the crown was casted and cemented in usual manner. Three kinds of instruments: hand curet, ultrasonic scaler, and ultrasonic curet were used. After instrumentation, final polishing was done with rubber cup and pumice. And surface changes were evaluated by stereomicroscope and scannig probe microscope. Roughness was increased after instrumentation in all groups, and was decreased after polishing except ultrasonic scaler group. Roughness in the ultrasonic scaler group was lower than others, and roughness after polishing in the hand curet group was lower than others. These results indicate that polishing procedure is recommended, because periodontalinstruments increase the surface roughness and induce the irreversible damage to the marginal portion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.33-36
• /
• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The rise throughput and the stability in the device fabrication can be obtained by applying of CMP process to STI structure in 0.18$\mu\textrm{m}$ m semiconductor device. The reverse moat process has been added to employ in of each thin films in STI-CMP was not equal, hence the devices must to be effected, that is, the damage was occurred in the device area for the case of excessive CMP process and the nitride film was remained on the device area for the case of insufficient CMP process, and than, these defects affect the device characteristics. Also, we studied the High Selectivity Slurry(HSS) to perform global planarization without reverse moat step.

• Tribology and Lubricants
• /
• v.38 no.5
• /
• pp.222-226
• /
• 2022

Between diaphragms made of stainless steel (SUS), which is the main component of a hydrogen gas compressor, micro-slip occurs owing to repeated bending, resulting in scratches on the surface. The surface scratch of the compressor part is a problem with airtightness, which reduces the efficiency of the compressor; in severe cases, damage is a possibility. In this study, the changes in friction and wear characteristics due to the surface polishing of SUS and carbon-based solid lubricant films (graphene and CNT) were analyzed. Bare SUS, polished SUS, graphene film, and CNT film specimens were prepared. The surface roughness of the SUS was significantly reduced by surface polishing but increased by carbon-based solid lubricating films. In contrast, the friction coefficient maintained a similar value after surface polishing but was significantly reduced by the carbon-based solid lubricant films. In particular, the graphene film exhibited the lowest initial friction coefficient, while the CNT film exhibited the lowest overall average friction coefficient. Regarding the wear rate, polished SUS exhibited the lowest value, but the surface condition of the wear track showed that the carbon-based solid lubricating films were relatively less damaged. Although the wear rate measured was largely attributed to the solid lubricating film peeling off, the SUS surface under the film was considered protected.