• Journal of the Korean Society for Precision Engineering
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• v.20 no.7
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• pp.147-154
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• 2003

An effective die-polishing robot system is developed. ATC (Automatic Tool Change), tool posture angle control, and robot program for polishing application are developed and integrated into a robotic system that consists of a robot, pneumatic grinding tool, and grinding abrasives (papers and special films). ATC is specifically designed to exchange whole grinding tool set for complete unmanned operation. A tool posture angle control system is developed for the tools to maintain a specified skew angle rather than right angle on the surface for best finishing results. A PC and the robot controller control ATC and tool posture angle. Also, there have been more considerations on enhancing the performance of the system. Elastic material is inserted between the grinding pad and the holder for better grinding contact. Robot path data are generated automatically from the NC data of previous machining process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.605-609
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• 2005

Chemical mechanical polishing (CMP) of Ni was performed by the various ratios of four kinds of oxidizers and an addition of alumina powders as an abrasive in each slurry with the different oxidizers. Moreover, the interaction between the Ni and the each oxidizer was discussed by potentiodynamic polarization measurement, in order to compare the effects of Ni-CMP and electrochemical characteristics on the Ni with the different oxidizers. As an experimental result, the removal rate of Ni reached a maximum at 1 $vol\%$ of $H_2O_2$. Also the removal rates of Ni increased with the audition of alumina abrasives in each slurry. The potentiodynamic polarization of Ni under dynamic condition showed a significant difference in electrochemical behavior by addition of $H_2O_2$ in solutions. Ni showed the perfect passivation behavior in solution without $H_2O_2$ under potentiodynamic polarization condition, while active dissolution dominates in solution with the addition of $H_2O_2$. The results indicate that the surface chemistry and electrochemical characteristics of Ni play an important role in controlling the polishing behavior of Ni.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.20-23
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Journal of the Korean Society of Safety
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• v.26 no.2
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• pp.13-19
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• 2011

The magnetic polishing is the useful method to finish using magnetic power of magnet. That method is one of precision polishing techniques and has an aim of the clean technology using for the pure of gas and inside of the clean pipe. The magnetic abrasive polishing method is not so common for machine that it is not spreaded widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper deals with development of the magnetic abrasive using Sr-Ferrite. In this development, abrasive grain GC used to resin bond fabricated low temperature. And Sr-Ferrite of magnetic abrasive powder fabricated that Sr-Ferrite was crused into 200 mesh. The XRD analysis result show that only GC abrasive and Sr-Ferrite crystal peaks detected which explains resin bond was not any more chemical reaction. From SEM analysis it is found that GC abrasive and Sr-Ferrite were strong bonding with each other by bond. The magnetic polishing is performed by polishing the surface of pipe by attracting magnetic abrasives with magnetic fields. This can be widely applied for finishing machinery fabrications such as various pipes and for other safety processes. In this paper, we could have investigated in to the changes of the movement of magnetic abrasive grain. In reference to this result, we could have made the experiment which is set under the condition of the magnetic flux density, polishing velocity according to the form of magnetic brush.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.378-379
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• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.851-857
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• 2002

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi~level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40%. So, we focused how to reduce the consumption of raw slurry In this paper, we presented the pH changes of diluted slurry and pH control as a function of KOH contents. Also, the removal rates of slurry with different dilution ratio were investigated. Finally, the CMP characteristics were discussed as a function of silica (SiO$_2$) abrasive contents.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.378-381
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• 2003

The chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing However, cost of ownership (COO) and cost of consumables (COC) were relatively increased because of expensive slurry. In this paper, the effects of different slurry composition on the oxide CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. We prepared the various kinds of slurry. In order to save the costs of slurry, the original slurry was diluted by de-ionized water (DIW). And then, alunima abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.206-209
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• 2002

The fixed abrasive pad(FAP) has been introduced in chemical mechanical polishing(CMP) field recently. In comparison with the general CMP which uses the slurry including abrasives, FAP takes advantage of planarity. resulting from decreasing pattern selectivity and defects such as dishing due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of $Al_2$O$_3$-FAP using hydrophilic polymers with swelling characteristic in water and explains the self.texturing phenomenon. It also focuses on the chemical effects on tungsten film and the FAP is evaluated on the removal rate as a function of chemicals such as oxidizer, catalyst, and acid. The removal rate is achieved up to 1000A1min as about 70 percents of the general one. In the future. the research has a plan of the advanced FAP and chemicals in tungsten CMP considering micro-scratch, life-time, and within wafer non-uniformity.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.7
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• pp.22-29
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• 2004

As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• Journal of IKEEE
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• v.23 no.4
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• pp.1175-1181
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• 2019

In this paper, we have studied the chemical mechanical polishing(CMP) characteristics of mixed abrasive silica slurry(MAS) retreated by adding of manganese oxide(MnO₂) abrasives within 1:10 diluted silica slurry. A slurry designed for optimal performance should produce high removal rates, acceptable polishing selectivity with respect to the underlying layer, low surface defects after polishing, and good slurry stability. The polishing performances of MnO₂ abrasive-added MAS are evaluated with respect to their particle size distribution, surface morphology, and CMP performances such as removal rate and non-uniformity. As an experimental result, we obtained the comparable slurry characteristics compared to original silica slurry in the view-point of high removal rate and low non-uniformity. Therefore, our proposed MnO₂-MAS can be useful to save on the high cost of slurry consumption since we used a 1:10 diluted silica slurry.