• Structural Engineering and Mechanics
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• v.55 no.4
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• pp.871-884
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• 2015

In the present study, separate and combined effects of rotary inertia, shear deformation and material non-homogeneity (MNH) on the values of natural frequencies of the simply supported beam are examined. MNH is characterized considering the parabolic variations of the Young's modulus and density along the thickness direction of the beam, while the value of Poisson's ratio is assumed to remain constant. At first, the equation of the motion including the effects of the rotary inertia, shear deformation and MNH is provided. Then the solutions including frequencies of the first three modes for various combinations of the parameters of the MNH, depth to length ratios, and shear corrections factors are reported. To show the accuracy of the present results, two comparisons are carried out and good agreements are found.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.2
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• pp.71-82
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• 1984

A programme, called BIPOLE, for the numerical analysis of twotimensional n-p-n bipolar transistors was developed. It has included the SRH and Auger recolnbination processes, the mobility dependence on the impurity density and the electric field, and the band-gap narrowing effect. The finite difference equations of the fundamental semiconductor equations are formulated using Newton's method for Poisson's equation and the divergence theorem for the hole and electron continuity equations without physical restrictions. The matrix of the linearized equations is sparse, symmetric M-matrix. For the solution of the linearized equations ICCG method and Gummel's algorithm have been employed. The programme BIPOLE has been applied to various kinds of the steady-state problems of n-p-n transistors. For the examples of applications the variations of common emitter current gain, emitter and diffusion capacitances, and input and output characteristics are calculated. Three-dimensional representations of some D.C. physical quantities such as potential and charge carrier distributions were displayed. This programme will be used for the nome,rical analysis of the distortion phenom ana of two-dimensional n-p-n transistors. The BIPOLE programme is available for everyone.

• Particle and aerosol research
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• v.5 no.3
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• pp.123-131
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• 2009

This paper presents simulation results of particle transport in low-pressure, low-temperature plasma environment. The size dependent transport of particles in the plasma is investigated with a two-dimensional simulation tool developed in-house for plasma chamber analysis and design. The plasma model consists of the first two and three moments of the Boltzmann equation for ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The particle transport model takes into account all important factors, such as gravitational, electrostatic, ion drag, neutral drag and Brownian forces, affecting the motion of particles in the plasma environment. The particle transport model coupled with both neutral fluid and plasma models is simulated through a Lagrangian approach tracking the individual trajectory of each particle by taking a force balance on the particle. The size dependant trap locations of particles ranging from a few nm to a few ${\mu}m$ are identified in both electropositive and electronegative plasmas. The simulation results show that particles are trapped at locations where the forces acting on them balance. While fine particles tend to be trapped in the bulk, large particles accumulate near bottom sheath boundaries and around material interfaces, such as wafer and electrode edges where a sudden change in electric field occurs. Overall, small particles form a "dome" shape around the center of the plasma reactor and are also trapped in a "ring" near the radial sheath boundaries, while larger particles accumulate only in the "ring". These simulation results are qualitatively in good agreement with experimental observation.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.31-37
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• 2009

This paper presents one and two dimensional simulation results with discontinuous features (shocks) of capacitively coupled rf plasmas. The model consists of the first two and three moments of the Boltzmann equation for the ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The local field and drift-diffusion approximations are not employed, and as a result the charged species conservation equations are hyperbolic in nature. Hyperbolic equations may develop discontinuous solutions even if their initial conditions are smooth. Indeed, in this work, secondary electron emission is shown to produce transient electron shock waves. These shocks form at the boundary between the cathodic sheath (CS) and the quasi-neutral (QN) bulk region. In the CS, the electrons emitted from the electrode are accelerated to supersonic velocities due to the large electric field. On the other hand, in the QN the electric field is not significant and electrons have small directed velocities. Therefore, at the transition between these regions, the electron fluid decelerates from a supersonic to a subsonic velocity in the direction of flow and a jump in the electron velocity develops. The presented numerical results are consistent with both experimental observations and kinetic simulations.

• Advances in Computational Design
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• v.9 no.1
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• pp.39-52
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• 2024

If the governing differential equation arising from engineering problems is treated as an analytic, continuous and derivable function, it can be expanded by one point as a series of finite numbers. For the function to be zero for each value of its domain, the coefficients of each term of the same power must be zero. This results in a recursive relationship which, after applying the natural conditions or the boundary conditions, makes it possible to obtain the values of the derivatives of the function with acceptable accuracy. The elastoplastic analysis of an inhomogeneous thick sphere of metallic materials with linear variation of the modulus of elasticity, yield stress and Poisson's ratio as a function of radius subjected to internal pressure is presented. The Beltrami-Michell equation is established by combining equilibrium, compatibility and constitutive equations. Assuming axisymmetric conditions, the spherical coordinate parameters can be used as principal stress axes. Since there is no analytical solution, the natural boundary conditions are applied and the governing equations are solved using a proposed new method. The maximum effective stress of the von Mises yield criterion occurs at the inner surface; therefore, the negative sign of the linear yield stress gradation parameter should be considered to calculate the optimal yield pressure. The numerical examples are performed and the plots of the numerical results are presented. The validation of the numerical results is observed by modeling the elastoplastic heterogeneous thick sphere as a pressurized multilayer composite reservoir in Abaqus software. The subroutine USDFLD was additionally written to model the continuous gradation of the material.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.18 no.3
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• pp.291-302
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• 2005

Due to the importance of the parameter in structural response, the uncertain elastic modulus was located at the center of stochastic analysis, where the response variability caused by the uncertain system parameters is pursued. However when we analyze the so-called stochastic systems, as many parameters as possible must be included in the analysis if we want to obtain the response variability that can reach a true one, even in an approximate sense. In this paper, a formulation to determine the statistical behavior of in-plane structures due to multiple uncertain material parameters, i.e., elastic modulus and Poisson's ratio, is suggested. To this end, the polynomial expansion on the coefficients of constitutive matrix is employed. In constructing the modified auto-and cross-correlation functions, use is made of the general equation for n-th moment. For the computational purpose, the infinite series of stochastic sub-stiffness matrices is truncated preserving required accuracy. To demons4rate the validity of the proposed formulation, an exemplary example is analyzed and the results are compared with those obtained by means of classical Monte Carlo simulation, which is based on the local averaging scheme.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.2
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• pp.67-73
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• 2003

The algorithm (or calculating the base-collector breakdown voltage of NPN BJT(Bipolar Junction Transistor) for integrated circuits is Proposed. The method for calculating the electric field using the solution of Poisson's equation is presented and the method for calculating the breakdown voltage using the integration of ionization coefficients is presented. The base-collector breakdown voltage of NPN BJT using 20V process obtained from the proposed method shows an averaged relative error of 8.0% compared with the measured data and the base-collector breakdown voltage of NPN BJT using 30V process shows an averaged relative error of 4.3% compared with the measured data

• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.2
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• pp.611-617
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• 1991

Effective stiffness of short fiber composite with a three-dimensional random orientation of fibers is derived theoretically and compared with available experimental data. The laminate analogy and transformed laminate analogy are used for modulus prediction of 2-D and 3-D random composites, respectively. The effective stiffness of random oriented fiber composite can be expressed in terms of longitudinal and transverse stiffnesses of unidirectional composites. The result of transformed laminate analogy is more accurate than other approaches such as, Christensen-Waals equational and Lavengood-Goettler equation, etc. Also the effective properties of random oriented fiber composite can be expressed in terms of fiber and matrix properties such as elastic modulus, shear modulus and Poisson's ratio.

• Journal of information and communication convergence engineering
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• v.9 no.3
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• pp.310-314
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• 2011

This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.

• Journal of Power System Engineering
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• v.2 no.3
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• pp.21-26
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• 1998

Numerical simulations for various fluid flows require enormous computing time during iterations. In order to solve this problem, several techniques have been proposed. A SOR method is one of the effective methods for solving elliptic equations. However, it is very difficult to find the optimum relaxation factor, the value of this factor for practical problems used to be estimated on the basis of expertise. In this paper, the implication of the relaxation factor are translated into fuzzy control rules on the basis of the expertise of numerical analysers, and fuzzy controller incorporated into a numerical algorithm. From two cases of study, Poisson equation and cavity flow problem, we confirmed the possibility of computational acceleration with fuzzy logic and qualitative reasoning in numerical simulations. Numerical experiments with the fuzzy controller resulted in generating a good performance.