• Journal of the Korean Ceramic Society
• /
• v.47 no.1
• /
• pp.19-25
• /
• 2010

Traditional Kr$\ddot{o}$ger-Vink (K-V) notation defines sites in ionic crystals as interstitial or belonging to host ions. It enables description and calculations of combinations of native and foreign defects, including dopants and substituents. However, some materials exhibit inherently disordered partial occupancy of ions and vacancies, or partial occupancy of two types of ions. For instance, the high temperature disordered phases of $Bi_2O_3$, $Ba_2In_2O_5$, $La_2Mo_2O_9$, mayenite $Ca_{12}Al_{14}O_{33}$, AgI, and $CsHSO_4$ are all good ionic conductors and thus obviously contain charged point defects. But traditional K-V notation cannot account for a charge compensating defect in each case, without resorting to terms like "100% substitution" or "Frenkel disorder". the former arbitrary and awkward and the latter inappropriate. Instead, a K-V compatible nomenclature in which the partially occupied site is defined as the perfect site, has been proposed. I here introduce it thoroughly and provide a number of examples.

• Journal of Institute of Control, Robotics and Systems
• /
• v.14 no.4
• /
• pp.336-341
• /
• 2008

Recently, research on a flat panel display(FPD) has focused on organic light-emitting display(OLED) which has wide angle of view, high contrast ratio and low power consumption. ITO(Indium-Tin-Oxide) films are the most widely used material as a transparent electrode of OLED and also in many other display devices like LCD or PDP. The performance and efficiency of OLED is related to the surface condition of ITO coated glass substrate. The typical surface defect of glass substrate is measured for electric characteristics and physical condition for transmittance and roughness. Since ITO coated glass substrate can be destroyed for inspection about surface roughness, sheet resistance, film thickness and transmittance, precise fabrication condition should be made based on the estimated relationship. In this paper, ITO films were prepared on the commercial glass substrate by the Ion-Plating method changing the partial pressure of gas(Ar, 02) and the chamber temperature between $200^{\circ}C$ and $300^{\circ}C$. The characteristics of films were examined by the 4-point probe, supersonic thickness measurement, transmittance measurement and AFM. We estimated the relationship between processing parameters(Ar gas, O2 gas, Temperature) and properties of ITO films (Sheet Resistance, Film Thickness, Transmittance, Surface Roughness).

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.6
• /
• pp.37-45
• /
• 1998

In this paper, we report the first three-dimensional simulation result of the transient enhanced diffusion(TED) of dopants in the ion-implanted silicon by employing our 3D semiconductor process simulator, INPROS system. In order to simulate three-dimensional TED redistribution of dopants in silicon, the dopant distributions after the ion implantation was calculated by Monte Carlo(MC) method, followed by finite element(FE) numerical solver for thermal annealing. Excellent agreement between the simulated 3D profile and the SIMS data has been obtained for ion-implanted arsenic and phosphorus after annealing the boron marker layer at 75$0^{\circ}C$ for 2 hours. Our three-dimensional TED simulation could successfully explain the reverse short channel effect(RSCE) by taking the 3D point defect distribution into account. A coupled TED simulation and device simulation allows reverse short channel effect on threshold to be accurately predicted.

• Textile Coloration and Finishing
• /
• v.17 no.5 s.84
• /
• pp.53-60
• /
• 2005

Fusing press m/c is used for heating and pressing the specimens that are fed into between the two moving belts. Therefore the belt movement, belt temperature, and the pressure between belts must be kept constant. Especially, the belts should move in a limited operation range. When the belts run far out of the operation point, the machine has to be stopped, which results in a product defect because the fusing conditions, e.g., temperature and pressure, change during the transient process time period. It is important to avoid the belt stopping by maintaining the belt movement in a limited range. This study reports about the movement of the endless fusing belt in a long-span roller fusing m/c. The belt position changes as the 1st-order system does; if the roller axes are slanting each other with a certain angle, the belt running around the two rolls shows a dynamic behavior with the time that deviates fastly at the beginning from the initial condion and slows down. Then it reaches at a final position. The skewer the axes, the greater the position change. The inital change rate of the belt becomes large as the skewness of the axes between the two rollers increases.

• Journal of Power System Engineering
• /
• v.12 no.5
• /
• pp.34-39
• /
• 2008

The combustion purpose of diesel engine is to reduce the emission of green gas and to produce high output. Generally, the regulation matter of emission gas is largely diveded by 'THC', 'NOx', 'CO' and 'PM'. Among those matters, the most problem is to disgorge into 'PM', the character of diesel combustion. Diesel PM can be controlled using Diesel Particulate Filter, which can effectively reduce the level of soot emissions to ambient background levels. $NO_2$ generated by the DOC is used to combust the carbon collected in the DPF at low temperature. To certificate DPF device that is suitable to domestic circumstances, it is necessary to exactly evaluate the DPF devices according to the regulation of DPF certificate test procedure fur retrofit. To do carry out the above-mentioned description the understanding of that regulation like the standard of PM reduction is needed. In this study the test procedure including test cycle and BPT test condition was examined, and also the test result for specific DPF was analyzed. In every test like field test, PM reduction efficiency test and Seoul-10 mode test, no defect was showed.

• Journal of the Korean Society of Fisheries and Ocean Technology
• /
• v.26 no.3
• /
• pp.303-307
• /
• 1990

In this paper, the factors of 1680 marine casualties occurred during 1986-1988 are analysed by the Principal Component Analysis. The main results are as follows: 1. Most of marine casualties result from the human factors such as careless operation and insufficient engine maintenance. Engine trouble is main part of accidents and great number of accidents is rated for fishing vessels. 2. Accidents are serious in case of cargo ships, passenger ships and tankers from the point of view of the damage of human life and properties. On the other hand, those are not so serious matter in case of fissing vessels and governmental vessels. 3. Grounding, collision and capsizal mainly result from careless operation, however material defect result in flooding

• Carbon letters
• /
• v.13 no.4
• /
• pp.205-211
• /
• 2012

Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04b
• /
• pp.30-33
• /
• 2004

Shallow p+-n junctions were formed by low-energy ion implantation and dual-step annealing processes The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth. A new simulator is designed to model boron diffusion in silicon, which is especially useful for analyzing the annealing process subsequent to ion implantation. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using a resonable parameter values, the simulator covers not only the equilibrium diffusion conditions but also the nonequilibrium post-implantation diffusion. Using initial conditions and boundary conditions, coupled diffusion equation is solved successfully. The simulator reproduced experimental data successfully.

• Proceedings of the KSME Conference
• /
• 2001.06a
• /
• pp.17-25
• /
• 2001

This paper briefly describes the new engineering method, called the enhanced reference stress method, to estimate J (or $C^*$) for non-linear fracture mechanics analysis of defective components, recently proposed by authors. The proposed method offers significant advantages over existing methods in terms of its accuracy, simplicity and robustness. Examples of application of the proposed method to typical piping integrity problems such as through-wall cracked pipes under combined loading, and surface cracked pipes under internal pressure and bending are given. Excellent agreements between the FE J and $C^*$ results and those of the proposed method provide sufficient confidence in the use of the proposed method. One notable point is that the proposed method can be used to estimate J (or $C^*$) along the crack front of surface cracks. Moreover simplicity of the proposed method makes it easy to extend to more complex problems. Thus the proposed method is attractive to assess the significance of defects under practical situations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.370-373
• /
• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.