• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.516-520
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• 2009

Atmosphere Plasmas of Gas Discharge (APGD) have been used in plasma sources for material processing such as etching, deposition, surface modification, etc. This study is to investigate and understand the fundamental plasma discharge properties. Especially, $SF_6/N_2$ mixed gas would be used in power transformer, GIS (Gas insulated switchgear) and so on. In this paper, we developed a one dimensional fluid simulation model with capacitively coupled plasma chamber at the atmosphere pressure (760 [Torr]). 38 kinds of $SF_6/N_2$ plasma particles which are an electron, two positive ions (${SF_5}^+$, ${N_2}^+$), five negative ions (${SF_6}^-$, ${SF_5}^-$, ${SF_4}^-$, ${F_2}^-$, ${F_1}^-$), thirty excitation and vibrational particles for $N_2$ were considered in this computation. The $N_2$ gases of 20%, 50%, 80% were mixed in $SF_6$ gas. As the amount of $N_2$ gas was increased, the properties of electro-negative plasma moved toward the electro-positive plasma.

• Nuclear Engineering and Technology
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• v.6 no.4
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• pp.253-259
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• 1974

The output signal voltage of the pulsed ionization chamber (PIC) was measured for a range of electron density (10$^{13}$ -10$^{17}$ m$^{-3}$ ) of the 3He plasmas. This experimental data was in excellent agreement with the theory including space charge effects. As an application of the PIC techniques, two-body recombination coefficients were obtained with electron densities measured from output signal voltage of the PIC. These values as a function of pressure were in good agreement with theoretical predictions and ranged from 5$\times$10$^{-14}$ to 3$\times$10$^{-13}$ (㎥/sec) at 300$^{\circ}$K for 1 to 10 atmospheric $^3$He plasma.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.90-94
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• 1995

Reactive Ion Etching(RIE) of Si$_{3}$N$_{4}$ in a CF$_{4}$/O$_{2}$ gas plasma exhibits such good anisotropic etching properties that it is widely employed in current VLSI technology. However, the RIE process can cause serious damage to the silicon surface under the Si$_{3}$N$_{4}$ layer. When an atmospheric pressure chemical vapor deposited(APCVD) SiO$_{2}$ layer is used as a etch-stop material for Si$_{3}$N$_{4}$, it seems inevitable to get a good etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$. Therefore, we have undertaken thorough study of the dependence of the etch rate of Si$_{3}$N$_{4}$ plasmas on $O_{2}$ dilution, RF power, and chamber pressure. The etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$ has been obtained its value of 2.13 at the RF power of 150 W and the pressure of 110 mTorr in CF$_{4}$ gas plasma diluted with 25% $O_{2}$ by flow rate.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.1
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• pp.97-97
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• 2012

Hinode/XRT has observed coronal mass ejections (CMEs) since it launched on Sep. 2006. Observing programs of Hinode/XRT, called 'CME watch', perform several binned observations to obtain large FOV observations with long exposure time that allows the detection of faint CME plasmas in high temperatures. Using those observations, we determine the upper limit to the mass of hot CME plasma using emission measure by assuming the observed plasma structure. In some events, an associated prominence eruption and CME plasma were observed in EUV observations as absorption or emission features. The absorption feature provides the lower limit to the cold mass while the emission feature provides the upper limit to the mass of observed CME plasma in X-ray and EUV passbands. In addition, some events were observed by coronagraph observations (SOHO/LASCO, STEREO/COR1) that allow the determination of total CME mass. However, some events were not observed by the coronagraphs possibly because of low density of the CME plasma. We present the mass constraints of CME plasma and associated prominence as determined by emission and absorption in EUV and X-ray passbands, then compare this mass to the total CME mass as derived from coronagraphs.

• Elastomers and Composites
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• v.34 no.4
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• pp.315-320
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• 1999

Surface modification of silicone rubber by low temperature plasma process was investigated to improve quality of silicone EVD tube by reducing tackiness and hydrophobicity. Treatment with nonpolymer-forming plasmas and thin film deposition with polymer-forming plasmas were tried. Tackiness could significantly be reduced, especially by thin film deposition. As a result, the tube became slippery and less vulnerable to contamination in laboratory environment. Inner as well as outer surface of the tube could be changed to be hydrophilic if the plasma contained oxygen. As a result, initial hydrodynamic resistance was reduced. The surface modification did not give any bad influence on mechanical properties of the silicone tube in most cases. Rather, some properties such as Young's modulus, ultimate tensile strength and elongation at break were improved.

• Journal of the Korean institute of surface engineering
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• v.32 no.2
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• pp.93-99
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• 1999

Surface polymer layer formed on the silicon wafer during the oxide overetching using $C_4F_8$/ helicon wave plasmas and their characteristics were investigated using spectroscopic elipsometry, X-ray photoelectron spectroscopy, and secondary ion mass spectrometry. Overetch percentage and dc-self bias voltage were varied to investigate the effects on the characteristics of the polymers remaining on the overetched silicon surface. The increase of bias voltage from -80 volts to -120 volts increased the C/F ratio and carbon bondings such as C-C, $C-CF_x$/, and C-Si in the polymer while reducing the thickness of the polymer layer. However, the increase of the overetch percentage from 50% to 100% did not change the composition of the polymer layer and the carbon bondings in the polymer layer remained same even though it increased the polymer thickness. The polymer layer formed at the higher dc-self bias voltage was more difficult to be removed by the following various post-etch treatments compared to that formed at the longer overetch percentage.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.317-317
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• 2011

Enhanced ICRF (Ion Cyclotron Range of Frequency) ion heating of H-mode D(H) plasma will be tried in 2011 KSTAR experimental campaign. Minority heating is a main ion heating scheme in the ICRF. Its efficiency increases as the hydrogen minority ratio increases in deuterium plasmas. And it should be sustained at a lower level than the critical minority ratio. Consequently, it is important to elevate the critical ratio to maximize ion heating and it is possible by increasing the ion temperature or parallel wave number (k${\parallel}$) of the antenna. Increasing the k${\parallel}$ is not a good approach since the coupling efficiency decreases exponentially with regard to k${\parallel}$ as well. So the remaining method is to increase ion temperature by using NB (Neutral Beam). Ion heating fraction of NB increases as the electron temperature increases. Therefore, we will try to heat electron by using ECH together with NB ion heating before ICRF power injection. The ICRF heating efficiency will be compared with respect to several NB+ECH+ICRF heating combinations through several diagnostics such as XICS (Xray Imaging Crystal Spectroscopy), CES (Charge Exchange Spectroscopy) and neutron measurement. The theoretical background and the experimental results will be presented in more detail in the conference.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.77-82
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• 2009

Thrombin activatable fibrinolysis inhibitor (TAFI) also known as plasma procarboxypeptidase B or U is a 60 kD glycoprotein, which is the major modulator of fibrinolysis in plasma. TAFI is a proenzyme, which is activated by proteolytic cleavage to an active carboxypeptidase B-like enzyme (TAFIa, 35.8 kD) by thrombin/thrombomodulin and plasmin. Modulation of fibrinolysis occurs when TAFIa enzymatically removes C-terminal lysine residues of partially degraded fibrin, thereby inhibiting the stimulation of tissue plasminogen activator (t-PA) modulated plasminogen activation. TAFIa undergoes a rapid conformational change at $37{^{\circ}C}$ to an inactive isoform called TAFIai. Potato tuber carboxypetidase inhibitor (PTCI) was shown to specifically bind to TAFIa as well as TAFIai. In this study, a novel immunoassay TAFIa/ai ELISA was used for quantitation of the two TAFI activation isoforms TAFIa and TAFIai. The ELISA utilizes PTCI as the capture agent and a double antibody sandwich technique for the detection. Low levels of TAFIa/ai antigen levels were detected in normal plasma and elevated levels were found in hemophilia A plasmas. TAFIa/ai antigen represents a novel marker to monitor fibrinolysis and TAFIa/ai ELISA may be a valuable assay for studying the role of TAFI in normal hemostasis and in pathological conditions.

• Macromolecular Research
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• v.12 no.1
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• pp.134-140
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• 2004

Semi-crystalline poly(ethylene terephthalate) (PET) film surfaces were modified with argon and oxygen plasmas by radio-frequency (RF) glow discharge at 240 mTorr/40 W; the changes in topography and surface structure were investigated by atomic force microscopy (AFM) in conjunction with specular reflectance of infrared microspectroscopy (IMS). Under our operating conditions, analysis of the AFM images revealed that longer plasma treatment results in significant ablation on the film surface with increasing roughness, regardless of the kind of plasma used. The basic topographies, however, were different depending upon the kind of gas used. The specular reflectance analysis showed that the ablative mechanisms of the argon and oxygen plasma treatments are entirely different with one another. For the Ar-plasma-treated PET surface, no observable difference in the chemical structure was observed before and after plasma treatment. On the other hand, the oxygen-plasma-treated PET surface displays a significant decrease in the number of aliphatic C-H groups. We conclude that a constant removal of material from the PET surface occurs when using the Ar-plasma, whereas preferential etching of aliphatic C-H groups, with respect to, e.g. , carbonyl and ether groups, occurs upon oxygen plasma.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2163-2165
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• 2005

A pulsed laser ablation deposition (PLAD) technique has been used for producing fine particle as well as thin film at relatively low substrate temperatures. However, in order to manufacture and evaluate such materials in detail, motions of plume particles generated by laser ablation have to be understood and interactions between the particles by ablation and gas plasma have to be clarified. Therefore, this paper was focused on the understanding of plume motion in laser ablation assisted by Ar plasma at 50(mTorr). Two-dimensional hybrid model consisting of fluid and particle models was developed and three kinds of plume particles which are carbon atom (C), ion $(C^+)$ and electron were considered in the calculation of particle method It was obtained that ablated $C^+$ was electrically captured in Ar plasmas by strong electric field (E). The difference between motions of the ablated electrons and $C^+$ made E strong and the collisional processes active.