• BMB Reports
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• 제39권5호
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• pp.530-536
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• 2006

Thermal conformational changes of human serum albumin (HSA) in phosphate buffer, 10 mM at pH = 7 are investigated using differential scanning calorimetric (DSC), circular dichroism (CD) and UV spectroscopic methods. The results indicate that temperature increment from $25^{\circ}C$ to $55^{\circ}C$ induces reversible conformational changes in the structure of HSA. Conformational change of HSA are shown to be a three-step process. Interestingly, melting temperature of the last domain is equal to the maximum value of fever in pathological conditions, i.e. $42^{\circ}C$. These conformational alterations are accompanied by a mild alteration of secondary structures. Study of HSA-SDS (sodium dodecyl sulphate) interaction at $45^{\circ}C$ and $35^{\circ}C$ reveals that SDS affects the HSA structure at least in three steps: the first two steps result in more stabilization and compactness of HSA structure, while the last one induces the unfolding of HSA. Since HSA has a more affinity for SDS at $45^{\circ}C$ compared to $35^{\circ}C$, It is suggested that the net negative charge of HSA is decreased in fever, which results in the decrease of HSA-associated cations and plasma osmolarity, and consequently, heat removal via the increase in urine volume.

• 한국정밀공학회지
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• 제17권8호
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• pp.134-139
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• 2000

In order to understand the removal mechanism and seek the optimal conditions. KrF excimer laser ablation of Cr films on glass substrates is investigated. The surface morphology of the laser-irradiated spot is examined by SEM. The measured single-shot ablation rate is found to be about two times the result of numerical analysis based on a surface vaporization model and heat conduction theory. Surface morphology examination indicates that the Cr film is removed by the sequence of melting-surface vaporization-,melt expulsion by plasma recoil and that the outmost ripple of the diffraction pattern gives a strong effect on the morphology of molten Cr during the melting and vaporization processes. To seek the optimal process parameters for micro patterning morphological investigation is carried out experimentally on samples having different chromium film thicknesses. Optimal processing conditions are determined to enhance the accuracy and quality of thin film removal for micro patterning.

• 한국재료학회지
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• 제31권6호
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• pp.320-324
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• 2021

Effects of growth variables and post-growth annealing on the optical, structural and electrical properties of magnetron-sputtered Ga_0.04Mg_0.10Zn_0.86O films are characterized in detail. It is observed that films grown from pure oxygen plasma showed high resistivity, ~10² Ω·cm, whereas films grown in Ar plasma showed much lower resistivity, 2.0 × 10^-2 ~ 1.0 × 10^-1 Ω·cm. Post-growth annealing significantly improved the electrical resistivity, to 4.3 ~ 9.0 × 10^-3 Ω·cm for the vacuum annealed samples and to 1.3 ~ 3.0 × 10^-3 Ω·cm for the films annealed in Zn vapor. It is proposed that these phenomena may be attributed to the improved crystalline quality and to changes in the defect chemistry. It is suggested that growth within oxygen environments leads to suppression of oxygen vacancy (Vo) donors and formation of Zn vacancy (V_Zn) acceptors, resulting in highly resistive films. After annealing treatment, the activation of Ga donors is enhanced, Vo donors are annihilated, and crystalline quality is improved, increasing the electron mobility and the concentration. After annealing in Zn vapor, Zn interstitial donors are introduced, further increasing the electron concentration.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.334.2-334.2
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• 2016

Silicon nitride (SiNx:H) films are generally used as passivation layer on solar cell and they are usually made by plasma enhanced chemical vapor deposition (PECVD). In this study, we investigated the properties of silicon nitride (SiNx:H) films made by PECVD. Effects of mixture ratio of process gases with silane (SiH4) and ammonia (NH3) on the passivation qualities of silicon nitride film are evaluated. Passivation properties of SiNx:H are focused by making antireflection properties identical with thickness and refractive index controlled. The absorption coefficient of each film was evaluated by spectrometric ellipsometery and the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained by UV-visible spectrophotometer. The interface properties were measured by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD).

• 천문학회보
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• 제44권2호
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• pp.52.1-52.1
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• 2019

Exploring the vicinity of super-massive black holes (SMBHs) is one of the frontiers in astrophysics. KaVA AGN Science WG has launched its Large Program in 2014 focusing on two SMBHs, Sgr A∗ and M87. They are selected based on their large apparent size. Sgr A∗ is the excellent laboratory for studying gas accretion process onto SMBH and M87 is well known as the best case for investigating plasma outflow ultimately driven by SMBH. For Sgr A∗, KaVA and EAVN provides superb UV-coverage on its emitting region and its scattering medium. In the case of M87, we have conducted high cadence dual-frequency (22and 43GHz )VLBI monitoring to clarify the global profile of the M87 jet velocity field and the spectral index map, which should reflect global structure of magnetic fields in the jet. From 2017, the AGN LP is recognized as multi-wavelength EHT project, conducting quasi-simultaneous coherent observations of M87 and Sgr A∗ with the Event Horizon Telescope (EHT) during its campaign observation periods. AGN WG is reviewing and revising its LP to convert it to EAVN LP. We will briefly report our scientific results and future plan which includes even broader international collaboration, namely East-Asia to Italy Nearly Global (EATING) VLBI to reach higher angular resolution.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.121.1-121.1
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• 2011

현재 상용화되고 있는 단결정 실리콘 태양전지는 알루미늄 페이스트를 이용하여 후면의 전 영역에 전계를 형성한다. 최근에는 고효율을 얻기 위하여 후면에 패시베이션 효과와 장파장에 대한 반사도를 증가 시키는 SiNx막을 증착 후, 국부적으로 전계를 형성하는 국부 후면 전극(Local back surface field)기술이 연구되고 있다. 본 연구에서는 전면만 텍스쳐 된 단결정 실리콘 웨이퍼를 이용하였다. Plasma Enhanced Chemical Vapor Deposition(PECVD)를 이용하여 전,후면에 SiNx를 증착 하였고 후면의 국부적인 전극 패턴 형성을 위하여 SiNx 식각용 페이스트를 사용한 스크린 프린팅 기술을 이용하였다. 스크린 프린팅을 이용하여 패턴이 형성된 후면에 알루미늄을 인쇄 한 후 Rapid Thermal Process(RTP)를 이용하여 소성 공정 조건을 변화시켰다. 소성 조건 동안 형성되는 후면 전계층은 peak 온도와 승온속도, 냉각 속도에 따라 형상이나 특성이 변화하기 때문에 소성 조건을 변화시키며 국부적 후면 전계 형성의 최적화에 관한 연구를 수행하였다. 패이스트를 이용하여 SiNx를 식각 후 광학 현미경(Optical Microscopy)을 사용하여 SiNx의 식각 유무를 살펴보았고, RTP로 형성된 국부 전계층의 형성 두께, 주변 부분의 형상을 살피기 위해 도핑 영역을 혼합수용액으로 식각하여 주사 전자 현미경(SEM)을 이용하여 관찰 하였다. 또한 후면의 특성을 살펴보기 위해 분광 광도계(UV/VIS/NIR Spectrophotometer)를 사용하여 후면 SiNx층의 유무에 따른 반사도를 비교, 측정 하였다.

• 한국재료학회지
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• 제20권9호
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• pp.494-499
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• 2010

Tin oxide thin films were prepared on borosilicate glass by rf reactive sputtering at different deposition powers, process pressures and substrate temperatures. The ratio of oxygen/argon gas flow was fixed as 10 sccm / 60 sccm in this study. The structural, electrical and optical properties were examined by the design of experiment to evaluate the optimized processing conditions. The Taguchi method was used in this study. The films were characterized by X-ray diffraction, UV-Vis spectrometer, Hall effect measurements and atomic force microscope. Tin oxide thin films exhibited three types of crystal structures, namely, amorphous, SnO and $SnO_2$. In the case of amorphous thin films the optical band gap was widely spread from 2.30 to 3.36 eV and showed n-type conductivity. While the SnO thin films had an optical band gap of 2.24-2.49 eV and revealed p-type conductivity, the $SnO_2$ thin films showed an optical band gap of 3.33-3.63 eV and n-type conductivity. Among the three process parameters, the plasma power had the most impact on changing the structural, electrical and optical properties of the tin oxide thin films. It was also found that the grain size of the tin oxide thin films was dependent on the substrate temperature. However, the substrate temperature has very little effect on electrical and optical properties.

• 한국어병학회지
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• 제25권2호
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• pp.95-101
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• 2012

설파디메톡신(sulfadimethoxine, SDM)을 넙치(평균 체중 $100{\pm}20$ g, $20{\pm}1.0^{\circ}C$)에 대하여 400 mg/kg의 농도로 1회 경구 투여한 다음, 혈장과 간에서 시간 경과에 따른 잔류량을 HPLC로써 분석하였다. SDM을 넙치의 조직에 2~50 ppm의 농도가 되도록 첨가한 결과, 평균 회수율은 혈장에서 92.24~93.62%, 간에서 88.34~91.90%의 범위로 나타났으며, 이 분석법의 검출한계는 0.05 ppm이었다. SDM은 투여한 후, 1시간 째에 혈액($402.64{\pm}59.66{\mu}g/ml$)과 간($238.18{\pm}54.00{\mu}g/ml$)에서 모두 최고농도로 분포하였다. 이후 SDM은 빠른 속도로 배설되었으며, 480시간째는 혈장과 간에서 검출되지 않았다.

• 한국전기전자재료학회논문지
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• 제24권1호
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• pp.12-16
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• 2011

In this study, we fabricated the flexible pentacene TFTs with the polymer gate dielectric and contact printing method by using the silver nano particle ink as a source/drain material on plastic substrate. In this experiment, to lower the cross-linking temperature of the PVP gate dielectric, UV-Ozone treatment has been used and the process temperature is lowered to $90^{\circ}C$ and the surface is optimized by various treatment to improve device characteristics. We tried various surface treatments; $O_2$ Plasma, hexamethyl-disilazane (HMDS) and octadecyltrichlorosilane (OTS) treatment methods of gate dielectric/semiconductor interface, which reduces trap states such as -OH group and grain boundary in order to improve the OTFTs properties. The optimized OTFT shows the device performance with field effect mobility, on/off current ratio, and the sub-threshold slope were extracted as $0.63cm^2 V^{-1}s^{-1}$, $1.7{\times}10^{-6}$, and of 0.75 V/decade, respectively.

• 한국재료학회지
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• 제26권1호
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• pp.47-53
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• 2016

Silicon nitride ($SiN_x:H$) films made by plasma enhanced chemical vapor deposition (PECVD) are generally used as antireflection layers and passivation layers on solar cells. In this study, we investigated the properties of silicon nitride ($SiN_x:H$) films made by PECVD. The passivation properties of $SiN_x:H$ are focused on by making the antireflection properties identical. To make equivalent optical properties of silicon nitride films, the refractive index and thickness of the films are fixed at 2.0 and 90 nm, respectively. This limit makes it easier to evaluate silicon nitride film as a passivation layer in realistic application situations. Next, the effects of the mixture ratio of the process gases with silane ($SiH_4$) and ammonia ($NH_3$) on the passivation qualities of silicon nitride film are evaluated. The absorption coefficient of each film was evaluated by spectrometric ellipsometry, the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained using a UV-visible spectrophotometer. The interface properties were determined by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD). In hydrogen passivation, gas ratios of 1:1 and 1:3 show the best surface passivation property among the samples.