• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.216-220
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• 2001

Piezoelectric ZnO thin films by Facing Targets Sputtering(FTS) method were deposited on slide glass. The Facing Targets Sputtering system can deposit thin film at plasma-free condition and change the deposition condition in wide range. The characteristics of ZnO thin films changed with power, working pressure and substrate temperature were investigated by XRD(x-ray diffractometer), alpha-step(Tencor) and SEM(Scanning Electron Microscopy) analyses. In the results, we suggest that FTS system is very suitable for the preparation of high quality ZnO thin films with good c-axis orientation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.527-532
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with dc bias voltage of -10V showed lower discharge voltage and lower erosion rate byion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardement during deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.95-98
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• 2003

Tin doped indium oxide(ITO) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ITO films with the optimum growth conditions showed resistivity of $2.36{\times}10^{-4}(\Omega}-cm$ and transmittance of 86.28% for a film 680nm thick in the wavelength range of the visible spectrum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.789-794
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• 2008

Zinc oxide (ZnO) has been widely studied for its practical applications such as transparent conduction electrodes for flat panel displays and solar cells. Especially, ZnO films show good chemical stability against hydrogen plasma, absence of toxicity, abundance in nature, and then suitable for photovoltaic applications. However, the fabrication process of thin film solar cells require a high substrate temperature and/or post heat treatment. Therefore, the layers have to withstand high temperatures, requiring an excellent stability without degrading their electronic and optical properties. In this paper, we investigated the stability of zinc oxide (ZnO) films doped with aluminum and hydrogen. Doped ZnO films were prepared by r.f. magnetron sputter and followed by heat treatment at different temperatures and for various times.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.133-138
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• 1998

To enhance the ionization level of I-PVD and reduce the coil voltage two approaches were tried and as a diagnostic, optical emission spectroscopy and impedance analysis of the plasma was done with a range of Ar pressures and RF power along with XRD analysis of deposited Ag films. RF sputtering power was pulsed with various on/off time scales to recover the ICP quenched by sputtered metals. This in average enhances the ionization of the sputtered atoms with 10 ms/10 ms and 100 ms/100ms pulse on/off time duration and gives higher (200) preferred orientation over (111) in deposited Ag films. Secondly, Small axial B field about 8G remarkably reduced RF coil sputtering and showed scaled relationship between RF power and magnetic field strength for optimal process condition. From OES of Ar0 and Ar+, wave-like dispersion structure appeared and reduced the coil voltage about 20% at very weak field strength of 8G. This should be studied further to have nay relation with low mode helicon wave launching.

• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.229-232
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• 2000

C-axis oriented zinc oxide thin films were deposited on glass substrate by reactive Facing Targets Sputtering (FTS) system. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alphastep (Tencor) analyses. The Facing Targets Sputtering system can deposit thin film in plasma-free situation and change the deposition condition in wide range. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature $300^{\circ}C$, inter targets distance 100mm. In the conditions, the rocking curve of zinc oxide thin films deposited on ZnO/Glass was $3.9^{\circ}$.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.71-74
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• 2009

Electroplated Cu is a cost efficient metallization method in microelectronic packaging applications. Typically in 3-D chip staking technology, utilizing through silicon via (TSV), electroplated Cu metallization is inevitable for the throughput as well as reducing the cost of ownership (COO).To achieve a comparable film quality to sputtering or CVD, a pre-cleaning process as well as plating process is crucial. In this research, atmospheric plasma is employed to reduce the usage of chemicals, such as trichloroethylene (TCE) and sodium hydroxide (NaHO), by substituting the chemical assisted organic cleaning process with plasma surface treatment for Cu electroplating. By employing atmospheric plasma treatment, marginally acceptable electroplating and cleaning results are achieved without the use of hazardous chemicals. The experimental results show that the substitution of the chemical process with plasma treatment is plausible from an environmentally friendly aspect. In addition, plasma treatment on immersion Sn/Cu was also performed to find out the solderability of plasma treated Sn/Cu for practical industrial applications.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.54-62
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• 1998

In a plasma etching system, ions become an important parameter in determining the wafer topography which depends on both the physical sputtering mechanism and the chemically enhanced reaction. this paper reports the energy and angular distributions of ions across the plasma sheath using a monte carlo method. The ion distribution is mainly affected by the magnitude of the sheath voltage and by the collision in the sheath. Furthemore, the local potential distribution in a plamsa sheath has been determined by solving the poisson's equation. In th is work, ionic collisions were cosidered in terms of both charge exchange and momentum transfer. The three-dimensional distributions of ions were calculated with varying the input process conditions in the plasma reactor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.147-150
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• 2002

The electron field emission properties of amorphous carbon (a-C) films deposited using a RF magnetron sputtering system have been improved by introducing a simple method of argon plasma treatment at room temperature. Surface morphologies and structural properties of the a-C films were investigated by scanning electron microscopy and Raman spectroscope, respectively. Structural properties and surface morphologies of the a-C films were changed by argon plasma treatment. The emission properties improved with the plasma treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.58-61
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• 2002

SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.