• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.240-243
• /
• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with and without the Presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor Plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films was studied using a scanning electron microscopy Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtain films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.5-8
• /
• 2000

The population density of excited species in dc, rf and laser ablation plume plasmas has been measured using laser absorption spectroscopy. It was shown that, when the plasma was modulated by on and off with, the sensitivity and signal to noise (S/N) ratio became high. For example, the atomic O(3$^{5}$ S$^{o}$ $_2$) Population density, No* in $O_2$/He mixtures was obtained by the highest S/N ratio at a frequency of 2.7kHz. In a 20Torr room air, the lowest No* level to be detectable was shown to be an order of 10$^{7}$ cm$^{-3}$ . The population densities of resonance Ar(1S$_2$) and Xe(1S$_4$) levels were also measured in barrier discharges and laser ablation plasmas.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.540-540
• /
• 2013

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped ethylcyclohexane plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Ethylcyclohexenewas used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. The ellipsometry results showed the refractive index change of the N-doped ethylcyclohexene plasma polymer film. The FT-IR spectrashowed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.19 no.2
• /
• pp.9-17
• /
• 2020

In this study, the surface changes of titanium alloy using laser surface treatment and the surface analysis using laser-induced plasma spectroscopy were carried out. The laser surface treatment induced changes in surface roughness and the diffusion of atmospheric elements. Excessive melting or less melting caused roughness changes, but when moderate levels of energy were applied, a smoother surface could be obtained than the initial surface. In the process, the diffusion of atmospheric elements took place. To analyze the diffusion of atmospheric elements with respect to surface morphology, the surfaces were re-shaped with grinding. In this experimental conditions, the effect of plasma formation by surface roughness was identified. Compensated plasma signals for the material properties were obtained and analysed by removing the background plasma signal.

• Korean Journal of Metals and Materials
• /
• v.50 no.7
• /
• pp.545-548
• /
• 2012

The optical and electronic properties of Indium Tin Oxide (ITO) thin films deposited on a RF-plasma treated glass substrate were investigated by X-Ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS), Reflected Electron Energy Loss Spectroscopy (REELS). The modification of glass substrates was carried out by varying the time of the plasma surface treatment in an oxygen atmosphere. The focus of this research was to examine how the optical and electronic properties of ITO thin films change with the plasma treatment time. The surface energy increased since the carbon bonds were removed from the surface after the glass substrate received the surface treatment. The ITO thin films produced on the glass substrate with surface treatment showed that the high optical transmittance was approximately 85%. The measured band gap energy was as high as 3.23 eV when the plasma treatment time was 60 s and the work function after the treatment was increased by 0.5 eV in comparison to that before the treatment of 60 s. The ITO thin film exhibited an excellent sheet resistance of $2.79{\Omega}/{\Box}$. We found that the optical and electronic properties of ITO thin films can be improved by RF-plasma surface treatment.

• Applied Science and Convergence Technology
• /
• v.23 no.1
• /
• pp.44-47
• /
• 2014

In this study, we investigated the basic properties of N-doped ethylcyclohexene plasma polymer thin films that deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) method with controlled ammonia flow rate. Ethylcyclohexene was used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia ($NH_3$) gas was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, UV-Visible spectroscopy, and water contact angle measurement. We found that with increasing plasma power, film thickness is gradually increased while optical transmittance is drastically decreased. However, under the same plasma condition, water contact angle is decreased with increasing $NH_3$ flow rate. The FT-IR spectra showed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.4
• /
• pp.146-150
• /
• 2021

Plasma information based virtual metrology (PI-VM) that predicts wafer-to-wafer etch rate variation after wet cleaning of plasma facing parts was developed. As input parameters, plasma information (PI) variables such as electron temperature, fluorine density and hydrogen density were extracted from optical emission spectroscopy (OES) data for etch plasma. The PI-VM model was trained by stepwise variable selection method and multi-linear regression method. The expected etch rate by PI-VM showed high correlation coefficient with measured etch rate from SEM image analysis. The PI-VM model revealed that the root cause of etch rate variation after the wet cleaning was desorption of hydrogen from the cleaned parts as hydrogen combined with fluorine and decreased etchant density and etch rate.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.473-473
• /
• 2010

Plasma is widely used in various commercial etchers and chemical vapor deposition. Unfortunately, real-time plasma process monitoring is still difficult. Some methods of plasma diagnosis is improved, however, it is possible for real-time plasma diagnosis to use non-intrusive probe only. In this research, the object is to investigate the suitability of using impedance analysis and optical emission spectroscopy (OES) for real-time plasma process monitoring. It is assumed that plasma system is a equivalent circuit. Therefore, V-I probe is used for measuring impedance, which can be a new non-intrusive probe for plasma diagnosis. From impedance data, we tried to analyse physical properties of plasma. And OES, the other method of plasma diagnosis, is a typical non-intrusive probe for analyzing chemical properties. The amount of the OES data is typically large, so this poses a difficulty in extracting relevant information. To solve this problem, principal component analysis (PCA) can be used. For fundamental information, Ar plasma and $O_2$ plasma are used in this experiment. This method can be applied to real-time endpoint and fault detections.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.8
• /
• pp.696-701
• /
• 2005

This paper was investigated the changes of surface properties of high-temperature-vulcanized (HTV) semiconductive silicone rubber due to oxygen plasma discharge. The modifications produced on the silicone rubber surface by oxygen plasma were accessed using Fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy(XPS), contact angle and Surface Roughness Tester. The results of the chemical analysis Showed that C-H bonds were broken due to plasma discharge and Silica-like bonds (SiOx, x=$3\~4$) increased. It is thought that the above changes lead to the increase of surface energy of high-temperature-vulcanized (HTV) semiconductive silicone rubber also, Surface roughness was increased with cleavage of side-chains and oxidation process, it confirmed change as the SEM. The micromorphology of surface and hydrophobicity due to plasma discharge based on our results were discussed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.159-159
• /
• 2013

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Various carbon-source were used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using cyclic voltammetry, ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. Electronic property of N-doped plasma thin film is changed as flow rate of the NH3 gas.