• Title/Summary/Keyword: Plasma shape

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Effects of Suppository Bases and Additives on Rectal Absorption of Ibuprofen Lysinate (이부프로펜 리지네이트의 직장흡수에 미치는 좌제기제 및 첨가제의 영향)

  • Jeon, Hong-Ryeol;Park, Dong-Woo;Lee, Seung-Mok;Yi, Jung-Woo;Choi, Young-Wook
    • Journal of Pharmaceutical Investigation
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    • v.24 no.3
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    • pp.145-153
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    • 1994
  • Ibuprofen is an effective non-steroidal anti-inflammatory drug (NSAID), but it has several limitations in clinical application because of low solubility in water and gastrointestinal irritation. A water-soluble salt of ibuprofen, ibuprofen Iysinate, has been synthesized to overcome these shortcomings, and it was formulated as suppository for rectal administration. Witepsol and polyethylene glycols were employed as suppository bases for either ibuprofen or ibuprofen Iysinate, in order to compare the bioavailability in rabbits. The plasma concentrations of ibuprofen were assayed by HPLC after a rectal administration of ibuprofen and ibuprofen Iysinate, respectively. In addition to the comparison of two suppository bases, the other factors which affect on rectal absorption were also evaluated, especially in the point of not only particle size and shape of ibuprofen Iysinate but also effects of additives such as stearic acid, cetyl alcohol and capric acid. And pharmacokinetic parameters such as AUC, $C_{max}$, and $T_{max}$ were also compared. In conclusion, spray-dried ibuprofen Iysinate which was polyporous and spherical shape gave an increased absorption from the rectal formulations with Witepsol Hl5 and stearic acid.

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Direct printing process based on nanoimprint lithography to enhance the light extraction efficiency of AlGaInP based red LEDs

  • Cho, Joong-Yeon;Kim, Jin-Seung;Kim, Gyu-Tae;Lee, Heon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.171-171
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    • 2012
  • In this study, we fabricated the high-brightness AlGaInP-based red light emitting diodes (LED)s using by direct printing technique and inductive coupled plasma (ICP) reactive ion etching (RIE). In general, surface roughening was fabricated by wet etching process to improve the light extraction efficiency of AlGaInP-based red LED. However, a structure of the surface roughening, which was fabricated by wet etching, was tiled cone-shape after wet etching process due to crystal structure of AlGaInP materials, which was used as top-layer of red LED. This tilted cone-shape of surface roughening can improve the light extraction of LED, but it caused a loss of the light extraction efficiency of LED. So, in this study, we fabricated perfectly cone shaped pattern using direct printing and dry etching process to maximize the light extraction efficiency of LED. Both submicron pattern and micron pattern was formed on the surface of red LED to compare the enhancement effect of light extraction efficiency of LEDs according to the diameter of sapphire patterns.After patterning process using direct printing and ICP-RIE proceeded on the red LED, light output was enhanced up to 10 % than that of red LED with wet etched structure. This enhancement of light extraction of red LED was maintained after packaging process. And as a result of analyze of current-voltage characteristic, there is no electrical degradation of LED.

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Characterization of rapidly consolidated γ-TiAl

  • Kothari, Kunal;Radhakrishnan, Ramachandran;Sudarshan, Tirumalai S.;Wereley, Norman M.
    • Advances in materials Research
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    • v.1 no.1
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    • pp.51-74
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    • 2012
  • A powder metallurgy-based rapid consolidation technique, Plasma Pressure Compaction ($P^2C^{(R)}$), was utilized to produce near-net shape parts of gamma titanium aluminides (${\gamma}$-TiAl). Micron-sized ${\gamma}$-TiAl powders, composed of Ti-50%Al and Ti-48%Al-2%Cr-2%Nb (at%), were rapidly consolidated to form near-net shape ${\gamma}$-TiAl parts in the form of 1.0" (25.4 mm) diameter discs, as well as $3"{\times}2.25"$ ($76.2mm{\times}57.2mm$) tiles, having a thickness of 0.25" (6.35 mm). The ${\gamma}$-TiAl parts were consolidated to near theoretical density. The microstructural morphology of the consolidated parts was found to vary with consolidation conditions. Mechanical properties exhibited a strong dependence on microstructural morphology and grain size. Because of the rapid consolidation process used here, grain growth during consolidation was minimal, which in turn led to enhanced mechanical properties. Consolidated ${\gamma}$-TiAl samples corresponding to Ti-48%Al-2%Cr-2%Nb composition with a duplex microstructure (with an average grain size of $5{\mu}m$) exhibited superior mechanical properties. Flexural strength, ductility, elastic modulus and fracture toughness for these samples were as high as 1238 MPa, 2.3%, 154.58 GPa and 17.95 MPa $m^{1/2}$, respectively. The high temperature mechanical properties of the consolidated ${\gamma}$-TiAl samples were characterized in air and vacuum and were found to retain flexural strength and elastic modulus for temperatures up to $700^{\circ}C$. At high temperatures, the flexural strength of ${\gamma}$-TiAl samples with Ti-50%Al composition deteriorated in air by 10% as compared to that in vacuum. ${\gamma}$-TiAl samples with Ti-48%Al-2%Nb-2%Cr composition exhibited better if not equal flexural strength in air than in vacuum at high temperatures.

A Study on the Growth Rate and Surface Shape of Single Crystalline Diamond According to HFCVD Deposition Temperature (HFCVD 증착 온도 변화에 따른 단결정 다이아몬드 표면 형상 및 성장률 변화)

  • Gwon, J.U.;Kim, M.S.;Jang, T.H.;Bae, M.K.;Kim, S.W.;Kim, T.G.
    • Journal of the Korean Society for Heat Treatment
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    • v.34 no.5
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    • pp.239-244
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    • 2021
  • Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

Effect of Particle Sphericity on the Rheological Properties of Ti-6Al-4V Powders for Laser Powder Bed Fusion Process (LPBF용 타이타늄 합금 분말의 유변특성에 대한 입자 구형도의 영향)

  • Kim, T.Y.;Kang, M.H.;Kim, J.H.;Hong, J.K.;Yu, J.H.;Lee, J.I.
    • Journal of Powder Materials
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    • v.29 no.2
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    • pp.99-109
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    • 2022
  • Powder flowability is critical in additive manufacturing processes, especially for laser powder bed fusion. Many powder features, such as powder size distribution, particle shape, surface roughness, and chemical composition, simultaneously affect the flow properties of a powder; however, the individual effect of each factor on powder flowability has not been comprehensively evaluated. In this study, the impact of particle shape (sphericity) on the rheological properties of Ti-6Al-4V powder is quantified using an FT4 powder rheometer. Dynamic image analysis is conducted on plasma-atomized (PA) and gas-atomized (GA) powders to evaluate their particle sphericity. PA and GA powders exhibit negligible differences in compressibility and permeability tests, but GA powder shows more cohesive behavior, especially in a dynamic state, because lower particle sphericity facilitates interaction between particles during the powder flow. These results provide guidelines for the manufacturing of advanced metal powders with excellent powder flowability for laser powder bed fusion.

Recycling and Characteristics of Plasma Melting Slag Materials Produced by Different Cooling Methods (플라즈마 용융방식으로 배출된 슬래그의 냉각방식에 따른 재료적 특성 및 재활용)

  • Chung, Juyoung;Bae, Wookeun;Kim, Moonil;Park, Seyong
    • Journal of the Korean GEO-environmental Society
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    • v.11 no.7
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    • pp.25-31
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    • 2010
  • In this study, it was intended to suggest new cooling method that enables to improve the applicability and added value higher than existing slag by applying new cooling method(powder cooling slag) at the time discharging slag, which is produced from the ash melting system that the plasma torch is used for the first time in Korea. It is suggested the applicative direction in the development of future recycling process by discovering its nature of material and applicative possibility as earthwork material. The ashes produced after the sewage sludge discharged from Y city was incinerated by the fluidized bed method and was used as test materials. As result of XRF(X-Ray Flourescence Spectrometry) analysis, main ingredient of sewage sludge ashes was $SiO_2$(32%) besides CaO, $Al_2O_3$, $Fe_2O_3$, and so on. In addition, as result of XRD analysis, traditional diffuse pattern of glass could be found from granulated air-cooled slags, while a minor crystal phase could be observed from powder cooling slag, because the powder on the surface exists in the state not melted. From EDX(Energy Dispersive X-ray Spectroscopy) analysis, it is deemed that powder ingredient has no change before and after it is used as cooling medium, and accordingly it is thought that the powder can be produced as the material where the function is added if used in different shape.

The Development of an Electroconductive SiC-ZrB2 Ceramic Heater through Spark Plasma Sintering

  • Ju, Jin-Young;Kim, Cheol-Ho;Kim, Jae-Jin;Lee, Jung-Hoon;Lee, Hee-Seung;Shin, Yong-Deok
    • Journal of Electrical Engineering and Technology
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    • v.4 no.4
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    • pp.538-545
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    • 2009
  • The SiC-$ZrB_2$ composites were fabricated by combining 30, 35, 40 and 45vol.% of Zirconium Diboride (hereafter, $ZrB_2$) powders with Silicon Carbide (hereafter, SiC) matrix. The SiC-$ZrB_2$ composites, the sintered compacts, were produced through Spark Plasma Sintering (hereafter, SPS), and its physical, electrical, and mechanical properties were examined. Also, the thermal image analysis of the SiC-$ZrB_2$ composites was examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffractometer (hereafter, XRD) analysis. The relative density of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$, and SiC+45vol.%$ZrB_2$ composites were 88.64%, 76.80%, 79.09% and 88.12%, respectively. The XRD phase analysis of the sintered compacts demonstrated high phase of SiC and $ZrB_2$ but low phase of $ZrO_2$. Among the SiC-$ZrB_2$ composites, the SiC+35vol.%$ZrB_2$ composite had the lowest flexural strength, 148.49MPa, and the SiC+40vol.%$ZrB_2$ composite had the highest flexural strength, 204.85MPa, at room temperature. The electrical resistivities of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$ and SiC+45vol.%$ZrB_2$ composites were $6.74\times10^{-4}$, $4.56\times10^{-3}$, $1.92\times10^{-3}$, and $4.95\times10^{-3}\Omega{\cdot}cm$ at room temperature, respectively. The electrical resistivities of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$ SiC+40vol.%$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ composites had Positive Temperature Coefficient Resistance (hereafter, PTCR) in the temperature range from $25^{\circ}C$ to $500^{\circ}C$. The V-I characteristics of the SiC+40vol.%$ZrB_2$ composite had a linear shape. Therefore, it is considered that the SiC+40vol.%$ZrB_2$ composite containing the most outstanding mechanical properties, high resistance temperature coefficient and PTCR characteristics among the sintered compacts can be used as an energy friendly ceramic heater or electrode material through SPS.

Effects of Bias Voltage and Ion-incident Angle on the Etching of Photoresist in a High-density CHF3 Plasma (고밀도 CHF3 플라즈마에서 바이어스 전압과 이온의 입사각이 Photoresist의 식각에 미치는 영향)

  • Kang, Se-Koo;Min, Jae-Ho;Lee, Jin-Kwan;Moon, Sang Heup
    • Korean Chemical Engineering Research
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    • v.44 no.5
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    • pp.498-504
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    • 2006
  • The etch rates of photoresist (PR) and the etch selectivity of $SiO_2$ to PR in a high density $CHF_3$ plasma were investigated at different ion-incident angles and bias voltages. A Faraday cage was employed for the accurate control of ion-incident angles. The ion energy was controlled by changing bias voltages. The etch rate of $SiO_2$ continuously decreased with ion-incident angles but the etch rate of PR remained constant up to the middle angle region and decreased afterwards. The etch rates of $SiO_2$ normalized to those at $0^{\circ}$ incident angle changed with the ion-incident angle following a cosine(${\theta}$) curve. On the other hand, the normalized etch rates of the PR changed showing a drastic over-cosine shape in the middle angle region. The etch selectivity of $SiO_2$ to PR decreased with an increase in the ion-incident angle because the etch yields of PR were enhanced by physical sputtering in the middle angle region compared to the case of $SiO_2$ etching. The etch selectivity of $SiO_2$ to PR decreased with an increase in the bias voltage at nearly all ion-incident angles.

Growth of Nanocrystalline Diamond on W and Ti Films (W 및 Ti 박막 위에서 나노결정질 다이아몬드의 성장 거동)

  • Park, Dong-Bae;Myung, Jae-Woo;Na, Bong-Kwon;Kang, Chan Hyoung
    • Journal of the Korean institute of surface engineering
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    • v.46 no.4
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    • pp.145-152
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    • 2013
  • The growth behavior of nanocrystalline diamond (NCD) film has been studied for three different substrates, i.e. bare Si wafer, 1 ${\mu}m$ thick W and Ti films deposited on Si wafer by DC sputter. The surface roughness values of the substrates measured by AFM were Si < W < Ti. After ultrasonic seeding treatment using nanometer sized diamond powder, surface roughness remained as Si < W < Ti. The contact angles of the substrates were Si ($56^{\circ}$) > W ($31^{\circ}$) > Ti ($0^{\circ}$). During deposition in the microwave plasma CVD system, NCD particles were formed and evolved to film. For the first 0.5h, the values of NCD particle density were measured as Si < W < Ti. Since the energy barrier for heterogeneous nucleation is proportional to the contact angle of the substrate, the initial nucleus or particle densities are believed to be Si < W < Ti. Meanwhile, the NCD growth rate up to 2 h was W > Si > Ti. In the case of W substrate, NCD particles were coalesced and evolved to the film in the short time of 0.5 h, which could be attributed to the fact that the diffusion of carbon species on W substrate was fast. The slower diffusion of carbon on Si substrate is believed to be the reason for slower film growth than on W substrate. The surface of Ti substrate was observed as a vertically aligned needle shape. The NCD particle formed on the top of a Ti needle should be coalesced with the particle on the nearby needle by carbon diffusion. In this case, the diffusion length is longer than that of Si or W substrate which shows a relatively flat surface. This results in a slow growth rate of NCD on Ti substrate. As deposition time is prolonged, NCD particles grow with carbon species attached from the plasma and coalesce with nearby particles, leaving many voids in NCD/Ti interface. The low adhesion of NCD films on Ti substrate is related to the void structure of NCD/Ti interface.

Sequential Changes of Pericarp Ultrastructure in Citrus reticulata Hesperidium (Citrus reticulata 감과 과피 내 미세구조 변화)

  • Kim, In-Sun
    • Applied Microscopy
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    • v.33 no.1
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    • pp.79-92
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    • 2003
  • Ultrastructural changes of the pericarp in Citrus reticulata has been investigated during hesperidium abscission. The pericarp was composed of compactly arranged parenchyma cell layers during early stages of fruit development. The outermost exocarp was green and active in photosynthesis. However, cells in the exocarp soon changed into collenchyma cells by developing unevenly thickened walls within a short time frame. As the fruit approached maturation, the chlorophyll gradually disappeared and chloroplasts were transformed into carotenoid-rich chromoplasts. In the mature fruit the exocarp consisted of large, lobed collenchyma cells with primary pit fields and numerous plasmodesmata. The immature mesocarp was a relatively hard and thick layer, located directly under the exocarp. With development, the deeper layers of the exocarp merged into the white, spongy mesocarp. Before separation of the hesperidium from the plant, some unusual features were detected in the plasma membrane of the exocarp cells. The number of small vacuoles and dark, irregular osmiophilic lipid bodies also increased enormously in the exocarp collenchyma after the abscission. They occurred between the plasma membrane and the wall, and invaginated pockets of the plasma membrane containing double-membraned vesicles were also frequently noticed. The lipid bodies in the cytoplasm were often associated with other organelles, especially with plastids and mitochondria. The plastids, which were irregular or amoeboid in shape, contained numerous large lipid droplets, and occasional clusters of phytoferritin, as well as few loosely -oriented peripheral lamellae. Myelin-like configurations of membrane were frequently observed in the vacuoles, as was the association of lipid bodies with the vacuolar membrane. Most vacuoles had an irregular outline, and lipid bodies were often connected to the tonoplast of the vacuoles. The structural changes underlying developmental, particularly to senescence, processes in various hesperidium will be reported in the separate paper.