• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.268-275
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• 2006

In this study, effect of sputtering on the plasma-nitriding substrate and before PVD coating on the microstucture, microhardness, surface roughness and the adhesion strength of CrZrN thin films were investigated. Experimental results showed that this sputtering process not only removed surface compound layer which formed during a plasma nitriding process but also induced an alteration of the surface of plasma nitrided substrate in terms of microhardness distribution, surface roughness. This in turn affected the adhesion strength of PVD coatings. After sputtering, microhardness distribution showed general decrease and the surface roughness became increased slightly. The critical shear stress measured from the scratch test on the CrZrN coatings showed an approximately 1.4 times increase in the adhesion strength through the sputtering prior to the coating and this could be attributed to a complete removal of compound layer from the plasma nitrided surface and to an increase in the surface roughness after sputtering.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.179-183
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• 2017

The direct growth method is simplified manufacturing process used to avoid damages and contaminants from the graphene transfer process. In this paper, graphene nano-walls (GNWs) were direct synthesized using electron cyclotron resonance (ECR) plasma by varying the $CH_4/H_2$ gas flow rate on the copper foil at low temperature (without substrate heater). Investigations were carried out of the changes in the morphology and characteristic of GNWs due to the relative intensity of hydrocarbon radical and molecule in the ECR plasma. The results of these investigations were then discussed.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.10
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• pp.888-893
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• 2016

In this study, the solution plasma process was utilized with the aim of degrading synthetic dyes in water at atmospheric pressure. The experiments were conducted in a batch-type reactor consisting of a symmetric wire-wire electrode configuration with rhodamine B (RhB) as the target synthetic dye. The effects of the plasma treatment time and initial dye concentration on the RhB degradation were investigated by monitoring the change in absorbance of RhB solutions. The RhB solutions turned lighter in color and finally colorless with prolonged plasma treatment time, indicating the destruction of dye molecules. The RhB solutions were found to have degraded, following the first-order kinetic process. However, for high initial RhB concentrations, another kinetic process or factor seems to play a dominant role at the initial degradation stage. The fitted first-order rate constant decreased as the initial concentration increased. This result suggests that the degradation behavior and kinetic process of the RhB solution strongly depends on its initial concentration. The RhB degradation is considered to be due to a combination of factors, including the formation of chemically oxidative species, as well as the emission of intense UV radiation and high-energy electrons from the plasma. We believe that the solution plasma process may prove to be an effective and environment-friendly method for the degradation or remediation of synthetic dye in wastewater.

• Journal of Industrial Technology
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• v.33 no.A
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• pp.67-72
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• 2013

CNT(carbon nanotube) humidity sensors with plasma treated electrodes exhibit a much faster response time and a higher sensitivity to humidity, compared to untreated CNT and porous Cr electrodes. These results may be partially due to their percolated pore structure being more accessible for water molecules and for expending the diffusion of moisture to the polyimide sensing film, and partially due to the oxygenated surface of CNT films. This paper shows a plasma process effect and selectivity characteristics of CNT film humidity sensor.

• Nuclear Engineering and Technology
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• v.44 no.1
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• pp.21-32
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• 2012

Fluorinated compounds mainly used in the semiconductor industry are potent greenhouse gases. Recently, thermal plasma gas scrubbers have been gradually replacing conventional burn-wet type gas scrubbers which are based on the combustion of fossil fuels because high conversion efficiency and control of byproduct generation are achievable in chemically reactive high temperature thermal plasma. Chemical equilibrium composition at high temperature and numerical analysis on a complex thermal flow in the thermal plasma decomposition system are used to predict the process of thermal decomposition of fluorinated gas. In order to increase economic feasibility of the thermal plasma decomposition process, increase of thermal efficiency of the plasma torch and enhancement of gas mixing between the thermal plasma jet and waste gas are discussed. In addition, noble thermal plasma systems to be applied in the thermal plasma gas treatment are introduced in the present paper.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Journal of Korean Society on Water Environment
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• v.28 no.3
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• pp.367-374
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• 2012

A flotation process has a shorter processing time and needs less space than a sedimentation process. Dissolved air flotation process (DAF) is an efficient flotation method and used in a conventional wastewater treatment process. However, DAF requires the circulation of water containing compressed air and requires expensive installation and operation cost. Plasma Air Flotation (PAF) process is able to float flocs by micro bubbles generated from underwater plasma without the circulation of bubbly water and additional saturators. Therefore, PAF can be an alternative solution overcoming economic barriers. In this study, Humic acid removal efficiency by PAF process was compared with that of sedimentation process. 44.67% and 87.3% reduction rate based on UV 254 absorbance has been measured in sedimentation and PAF respectively. In particular, PAF in the flocculation zone can dramatically remove humic acid from water. In flocculation zone, PAF can separate organic matters but sedimentation cannot.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.79-79
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• 2012

A high temperature and a low temperature plasma process technologies were developed and demonstrated for synthesis, hybrid formation, surface treatment and CVD engineering of nano powder. RF thermal plasma is used for synthesis of spherical nano particles in a diameter ranged from 10 nm to 100 nm. A variety of nano particules such as Si, Ni, has been synthesized. The diameter of the nano-particles can be controlled by RF plasma power, pressure, gas flow rate and raw material feed rate. A modified RF thermal plasma also produces nano hybrid materials with graphene. Hemispherical nano-materials such as Ag, Ni, Si, SiO2, Al2O3, size ranged from 30 to 100 nm, has been grown on graphene nanoplatelet surface. The coverage ranged from 0.1 to 0.7 has been achieved uniformly over the graphene surface. Low temperature AC plasma is developed for surface modification of nano-powder. In order to have a three dimensional and lengthy plasma treatment, a spiral type of reactor has been developed. A similar plasma reactor has been modfied for nano plasma CVD process. The reactor can be heated with halogen lamp.

• Journal of Welding and Joining
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• v.20 no.4
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

• Journal of Advanced Marine Engineering and Technology
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• v.27 no.5
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• pp.657-665
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• 2003

Combined De-NOx Process in which $NH_3$ SCR (Selective Catalytic Reduction) and non-thermal Plasma Process are simultaneously used, has been investigated with a pilot test facility. The pilot test facility treats the combustion flue gases exhausted from a diesel engine that generates 240 kW of electrical power. Test results show that up to 80 % of NOx (NO and NO2) can be removed at 100 - $200^{\circ}C$. None of conventional De-NOx techniques works under such low temperature range. In addition to NOx. the Pilot test results show that soot can be simultaneously treated with the present non-thermal plasma technique. The present pilot test shows that the electrical power consumption to operate the non-thermal plasma reactor is equivalent to 3 - 4 % of the electrical power generated by the diesel engine.