• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.349-350
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• 2012

Porous silicon (PS) was prepared by electrochemical anodization. Ultra-thin zinc oxide (ZnO) capping layers were deposited on the PS by plasma-assisted molecular beam epitaxy (PA-MBE). The effects of the ZnO capping layers on the properties of the as-prepared PS were investigated using scanning electron microscopy (SEM) and photoluminescence (PL). The as-prepared PS has circular pores over the entire surface. Its structure is similar to a sponge where the quantum confinement effect (QCE) plays a fundamental role. It was found that the dominant red emission of the porous silicon was tuned to white light emission by simple deposition of the ultra-thin ZnO capping layers. Specifically, the intensity of white light emission was observed to be enhanced by increasing the growth time from 1 to 3 min.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제27회 학술발표회 초록집
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• pp.246-246
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• 2004

• 방사선산업학회지
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• 제17권2호
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• pp.199-207
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• 2023

Since seeds can be directly used as food resources as well as for crop cultivation or preservation of genetic resources, it is essential to develop high-quality seed processing technology to increase agricultural productivity. Seed treatment means processing technologies of seeds through physical or chemical treatment processes from after harvesting seeds to before sowing of seeds to improve germination and growth rate, durability, and immunity, etc. Since chemical seed treatment technology using pesticides or plant growth regulators has problems of environmental pollution and human toxicity, it is desired to develop an alternative technology. As a physical seed treatment method, various technologies such as ionizing radiation, plasma, microwave, and magnetic field are being developed, and some of them are being used practically. In this paper, I will summarize the mechanism of seed priming and disinfection, and the advantages and disadvantages of application, focusing on these physical seed treatment methods. Low dose or moderate intensity ionizing radiation, microwave, low-temperature plasma, and magnetic field treatments often promoted seed germination and seedling growth. However, effective removal of direct seed pathogens at these treatment intensities appears to be difficult. And it has been shown that relatively high-dose electron beam treatment using low-energy electron beams kills microorganisms on the seed surface and hull layer while not damaging the inner tissue of the seed, and is also effectively used for seed treatment on a commercial scale. In order to put the physical seed treatment technology to practical use in Korea, it is necessary to develop an economical scale treatment device along with the development of individual treatment technology to each crop.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.1-12
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• 2003

This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.

• 한국진공학회지
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• 제7권4호
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• pp.410-414
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• 1998

본 연구에서는 플라즈마 중합 반응의 기판 재질과 전극 위치에 대한 의존성을 규명 하기 위해서 Ar방전의 발광 분석을 행하였으며 제작된 박막의 가교성을 확인하기 위해서 전자빔 노광을 시켜보았다. 기판의 재질이 도체 및 절연체인 양자의 경우를 비교해 보면 전 자는 후자에 비해서 전체적으로 발광 스펙트럼의 피이크 강도가 크게 나타났으며, 준안정상 태에 대한 피이크와 이온에 대한 피이크를 검토한 결과, 기판이 절연물일 때는 전극의 위치 를 멀게 할수록 이온의 피이크 강도가 극단까지 떨어짐을 알 수 있었다. 제작된 중합스티렌 박막을 통하여 발광 스펙트럼의 변화에 따라서 막의 가교성 변화가 생기는 것을 알 수 있었 으며 이 막을 전자빔에 노광하였을 때, 기판이 절연물인 경우에는 패턴을 제작하는 것이 가 능하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.291-291
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• 2010

Electron-beam lithography (EBL) process is a versatile tool for a fabrication of nanostructures, nano-gap electrodes or molecular arrays and its application to nano-device. However, it is not appropriate for the fabrication of sub-5 nm features and high-aspect-ratio nanostructures due to the limitation of EBL resolution. In this study, the precision assembly and alignment of DNA molecule was demonstrated using sub-5 nm nanostructures formed by a combination of conventional electron-beam lithography (EBL) and plasma ashing processes. The ma-N2401 (EBL-negative tone resist) nanostructures were patterned by EBL process at a dose of $200\;{\mu}C/cm2$ with 25 kV and then were ashed by a chemical dry etcher at microwave (${\mu}W$) power of 50 W. We confirmed that this method was useful for sub-5 nm patterning of high-aspect-ratio nanostructures. In addition, we also utilized the surface-patterning technique to create the molecular pattern comprised 3-(aminopropyl) triethoxysilane (APS) as adhesion layer and octadecyltrichlorosilane (OTS) as passivation layer. DNA-templated gold nanoparticle chain was attached only on the sub-5 nm APS region defined by the amine groups, but not on surface of the OTS region. We were able to obtain DNA molecules aligned selectively on a SiO2/Si substrate using atomic force microscopy (AFM).

• 한국자원리싸이클링학회:학술대회논문집
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• 한국자원리싸이클링학회 2006년도 춘계임시총회 및 제27회 학술발표대회
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• pp.56-60
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• 2006

In 2005, the imports of titanium metals was about 22.8 million US$(7,700 tons) in Korea. New scrap produced was estimated to be 359 tons and the exports were about 352 tons. Generally scrap is recylced into titanium ingot either with or without virgin metal using traditional vacuum-arc-melting and cold hearth melting. In Korea, there is no titanium ingot producers(recyclers). In this paper, the brief summary of major titanium melting technology, such as vacuum arc remelting(VAR), electron beam melting(EBM), plasma arc melting(PAM) is given and discussed. In view of titanium market situation of Korea, the technological development of ingot production from scrap is big problem to be solved in order to realize extensive cost reduction for titanium products.

• 한국진공학회지
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• 제7권1호
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• pp.72-76
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• 1998

본 연구에서는 방전내에서 활성화된 라디칼의 반응을 촉진시키는 플라즈마중합을 통하여 기능성 유기박막을 합성하기 위해 새로운 형태의 유동가스형 반응장치를 개발하였 다. 중합을 위해서 스티렌 모노머를 사용하였으며 분자구조와 분자량 분포에 대한 분석을 행하였다. 제작된 플라즈마중합막은 우수한 성능의 전자빔 레지스트로서 평가되었다. 새로운 플라즈마 반응장치를 이용하여 제작된 박막의 감도는 습식공정에 의해 제작된 레지스트의 감도에 비해서 향상되었으며 깨끗한 패턴이 성공적으로 제작되었다.

• Nuclear Engineering and Technology
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• 제37권5호
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• pp.447-456
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• 2005

Laser driven accelerators promise to provide an alternative to conventional accelerator technology. They rely on the excitation of large amplitude density waves in a plasma by the photon pressure of an intense laser. The density oscillations in which electrons and ions are separated, result in extremely large longitudinal electric fields that can be several orders of magnitude larger than those that are used in today's radio-frequency accelerators. Whereas this principle had been demonstrated experimentally for nearly two decades, it was not until 2004 that the production of high quality electron beams around 100 MeV was demonstrated. Analysis, aided by particle-in-cell simulations, as well as experiments with various plasma lengths and densities, indicate that tailoring the length of the accelerator, together with loading of the accelerating structure with beam, are the keys to production of mono-energetic electron beams. Increasing the energy towards a GeV and beyond will require reducing the plasma density and design criteria are discussed for an optimized accelerator module. The current progress and future directions are summarized through comparison with conventional accelerators, highlighting the unique short and long term prospects for intense radiation sources and high energy accelerators based on laser-drivenplasma accelerators.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.250.1-250.1
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• 2014

A multicusp ion source has been used widely in negative hydrogen cyclotrons mainly for radioisotope productions. The ion source is designed to have cusp geometries of magnetic field inside plasma chamber, where ions are confining and their mean lifetimes increase. The magnetic confinement produced a number of permanent magnetic poles helps to increase beam currents and reduce the emittance. Therefore optimizing the number of magnets confining more ions and increasing their mean lifetime in plasma has to be investigated in order to improve the performance of the ion source. In this work a numerical simulation of the magnetic flux density from a number of permanent magnets is carried to optimize the cusp geometries producing the highest plasma density, which is clearly indicated along the full-line cusp geometry. The effect of magnetic fields and a number of poles on the plasma structure are investigated by a computing tool. The electron confinement effect becomes stronger and the density increases with increasing the number of poles. On the contrary, the escape of electrons from the loss cone becomes more frequent as the pole number increases [1]. To understand above observation the electron and ion's trajectories along with different cusp geometries are simulated. The simulation has been shown that the optimized numbers of magnets can improve the ion density and uniformity.