• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.867-869
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• 2008

We have investigated the effects of hydrogen plasma treatment by PECVD (Plasma Enhanced Chemical Vapor Deposition) in the back channel region, the method for reducing the off state leakage current which increases with the short channel length of a-Si:H TFTs. To improve the off current characteristics, we analyzed the hydrogen plasma treatment with various RF power and plasma treatment times of PECVD. As the result of hydrogen plasma treatment in the back channel region it was remarkably reduced the off current level of 2um channel length TFT.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.401-404
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• 2003

This paper investigates the effect of plasma treatment of aluminum on the fracture toughness of aluminum/CFRP composites, The surface of the aluminum panel was treated by a DC plasma. The plasma treatment was carried out at volume ratio of acetylene gas to nitrogen gas of 5:5 and the treatment times used was 30 sec. The fracture toughness of plasma-treated aluminum/CFRP' composites was compared with that of untreated aluminum/CFRP composites and The fracture surface of aluminum/CFRP composites was compared with SEM. The results showed that fracture toughness of plasm-treated aluminum/CFRP composites was about 50% higher than that of untreated aluminum/CFRP composites.

• Journal of Welding and Joining
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• v.18 no.4
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• pp.64-69
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• 2000

Reliability of PBGA(Plastic Ball Grid Array) package is very weak compared with normal plastic packages. The reliability are the lower resistance to popcorn cracking, which is reduced by moisture absorption in PCB(Printed Circuit Board). This paper adapts plasma treatment process and analyzes their effect. The contents of C and Cl decrease after plasma treatment but O, Ca and N relatively increase. The Plasma treatment to improve the adhesion between EMC(Epoxy Molding Compound) and PCB(solder mask). The degree of improvement was over 100% Max., which is depend on the properties of EMC. Ar+H$_2$as plasma gas show good result. There is a little difference in RF power and treatment time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.360-363
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• 2003

In this paper, we investigated SiNx film as a buffer layer of TFT-FRAM. Buffer layers were prepared by two step process of a $N_2$ plasma treatment and subsequent $SiN_x$ deposition. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of current-voltage curve disappeared. After $N_2$ plasma treatment, a leakage current was decreased about 2 orders. From these results, it is possible to perform the plasma treating process to make a good quality buffer layer of MFIS-FET or capacitor as an application of non-volatile memory.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.85-89
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• 2021

High reliability thin film transistors are important factors for next-generation displays. The reliability of transparent a-IGZO semiconductors is being actively studied for display applications. A plasma treatment can fill the oxygen vacancies in the channel layer and the channel layer/insulating layer interface so that the device can work stably under a bias voltage. This paper studies the effect of plasma treatment on the performance of a-IGZO TFT devices. The influence of different plasma gases on the electrical parameters of device and its working reliability are reviewed. The article mentions argon, fluorine, hydrogen and several ways of processing in the atmosphere. Among these methods, F (fluorine) plasma treatment can maximize equipment reliability. It is expected that the presented results will form a basis for further research to improve the reliability of a-IGZO TFT.

• Journal of the Korean Ceramic Society
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• v.38 no.7
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• pp.602-607
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• 2001

Zirconia powder containing 3 mol% yttria (3Y-PSZ) was casted on the cast iron substrate by plasma spraying method. Coated specimens were then heat treated at 500$\^{C}$ in nitrogen plasma. Wear tests were performed on nitrogen heat treated and non heat treated samples at temperatures from 25$\^{C}$ to 600$\^{C}$. Wear results showed that the friction coefficient and the wear loss of both the treated and the non-treated samples showed maximum value at 400$\^{C}$. These results were explained by low temperature thermal degradation due to the monoclinic transformation. Nitrogen plasma treatment significantly improved the tribological performance. The effect of nitrogen heat treatment on tribological behavior was explained by the increased micro-hardness and decreased monoclinic faction.

• Textile Coloration and Finishing
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• v.6 no.4
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• pp.27-33
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• 1994

Wool fabrics were treated with low temperature oxygen plasma and/or protease, and examined for their mechanical and dyeing properties. By plasma-treatment the strength of wool fabric increased and higher rate of weight loss for protease treatment was obtained. When dyed by levelling type acid dye equilibrium dye uptake appeared same, but rate of dyeing increased by the plasma treatment, while, with milling type acid dye, both of them increased greatly in the order of untreatedplasma/protease-treated. It was assumed from the above results that plasma affects the surface of fiber, and enzyme attacks mainly the inner part of fiber. This was confirmed again by scanning electron microscope.

• Journal of Surface Science and Engineering
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• v.48 no.4
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• pp.163-168
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• 2015

Graphene has attracted much attention due to its remarkable physical properties and potential applications in many fields. In special, the electronic properties of graphene are influenced by the number of layer, stacking sequence, edge state, and doping of foreign elements. Recently, many efforts have been dedicated to alter the electronic properties by doping of various species, such as hydrogen, oxygen, nitrogen, ammonia and etc. Here, we report our recent results of plasma doping on graphene. We prepared mechanically exfoliated graphene, and performed the plasma treatment using ammonia gas for nitrogen doping. The direct-current plasma system was used for plasma ignition. The doping level was estimated from the number of peak shift of G-band in Raman spectra. The upshift of G-band was observed after ammonia plasma treatment, which implies electron doping to graphene.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.943-947
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• 2007

The effect of hydrogen and oxygen plasma treatments on the structural properties of carbon nanotube(CNT) has been systematically investigated. As the plasma power was increased, nano particles were appeared at the surface of CNTs. At high plasma power(300 Watt), the structure of CNT was changed from nanotube type to nano particles. However, in case of hydrogen plasma treatment, there was no change in microstructure of CNT. From the Raman analysis, the crystallinity of CNT was deteriorated by the plasma treatment, regardless of gas types.

• Korean Journal of Metals and Materials
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• v.50 no.7
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• pp.545-548
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• 2012

The optical and electronic properties of Indium Tin Oxide (ITO) thin films deposited on a RF-plasma treated glass substrate were investigated by X-Ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS), Reflected Electron Energy Loss Spectroscopy (REELS). The modification of glass substrates was carried out by varying the time of the plasma surface treatment in an oxygen atmosphere. The focus of this research was to examine how the optical and electronic properties of ITO thin films change with the plasma treatment time. The surface energy increased since the carbon bonds were removed from the surface after the glass substrate received the surface treatment. The ITO thin films produced on the glass substrate with surface treatment showed that the high optical transmittance was approximately 85%. The measured band gap energy was as high as 3.23 eV when the plasma treatment time was 60 s and the work function after the treatment was increased by 0.5 eV in comparison to that before the treatment of 60 s. The ITO thin film exhibited an excellent sheet resistance of $2.79{\Omega}/{\Box}$. We found that the optical and electronic properties of ITO thin films can be improved by RF-plasma surface treatment.