• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.552-553
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• 2005

In order to improve energy efficiency in the dilute trichloroethylene removal using the nonthermal plasma process, the barrier discharge treatment combined with manganese dioxide was experimentally studied. Reaction kinetics in this process was studied on the basis of final byproducts distribution. Decomposition efficiency was improved to about 99% at the specific energy 40J/L with passing through manganese dioxide. C=C $\pi$ bond cleavage in TCE gave DCAC (single bond, C-C) through oxidation reaction during the barrier discharge plasma treatment. Those DCAC were broken easily in the subsequent catalytic reaction due to the weak bonding energy about 3 ~ 4 eV compared with the double bonding energy in TCE molecules. Oxidation byproducts of DCAC and TCAA from TCE decomposition are generated from the barrier discharge plasma treatment and catalytic surface chemical reaction, respectively. Complete oxidation of TCE into $CO_X$ is required to about 400J/L.

• The Korean Journal of Physiology and Pharmacology
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• v.12 no.2
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• pp.37-41
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• 2008

Melatonin has been reported to protect neurons from a variety of neurotoxicity. However, the underlying mechanism by which melatonin exerts its neuroprotective property has not yet been clearly understood. We previously demonstrated that melatonin protected kainic acid-induced neuronal cell death in mouse hippocampus, accompanied by sustained activation of Akt, a critical mediator of neuronal survival. To further elucidate the neuroprotective action of melatonin, we examined in the present study the causal mechanism how Akt signaling pathway is regulated by melatonin in a rat primary astrocyte culture model. Melatonin resulted in increased astrocytic Akt phosphorylation, which was significantly decreased with wortmannin, a specific inhibitor of PI3K, suggesting that activation of Akt by melatonin is mediated through the PI3K-Akt signaling pathway. Furthermore, increased Akt activation was also significantly decreased with luzindole, a non-selective melatonin receptor antagonist. As downstream signaling pathway of Akt activation, increased levels of CREB phoshorylation and GDNF expression were observed, which were also attenuated with wortmannin and luzindole. These results strongly suggest that melatonin exerts its neuroprotective property in astrocytes through the activation of plasma membrane receptors and then PI3K-Akt signaling pathway.

• The Korean Journal of Physiology and Pharmacology
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• v.23 no.2
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• pp.103-111
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• 2019

The study is to investigate effects of andrographolide on experimental autoimmune myocarditis (EAM). Lewis rats were immunized on day 0 with porcine cardiac myosin to establish EAM. The EAM rats were treated with either andrographolide (25, 50, 100 mg/kg/day) or vehicle for 21 days. An antigen-specific splenocytes proliferation assay was performed by using the cells from control rats immunized with cardiac myosin. Survival rates, myocardial pathology and myocardial functional parameters (left ventricle end-diastolic pressure, ${\pm}dP/dt$ and left ventricular internal dimension) of EAM rats received andrographolide were significantly improved. Andrographolide treatment caused an decrease in the infiltration of $CD3^+$ and $CD14^+$ positive cells in myocardial tissue. Moreover, andrographolide treatment caused a reduction in the plasma levels of tumor necrosis factor-alpha, interleukin-17 (IL-17) and myosin-antibody, and an increase in the level of IL-10 in EAM rats. Oral administration of andrographolide resulted in the decreased expression of p-PI3K, p-Akt without any change of PI3K and Akt. Further results indicate andrographolide significantly inhibited myosin-induced proliferation in splenocytes, and this effect was inhibited by co-treatment of SC79 (Akt activator). Our data indicate andrographolide inhibits development of EAM, and this beneficial effect may be due to powerful anti-inflammatory activity and inhibitory effect on PI3K/Akt pathway.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.247-253
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• 2018

We examined the characteristics of indium tin zinc oxide (ITZO) thin film transistors (TFTs) on polyimide (PI) substrates for next-generation flexible display application. In this study, the ITZO TFT was fabricated and analyzed with a SiOx/SiNx gate insulator deposited using plasma enhanced chemical vapor deposition (PECVD) below $350^{\circ}C$. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) results revealed that the oxygen vacancies and impurities such as H, OH and $H_2O$ increased at ITZO/gate insulator interface. Our study suggests that the hydrogen related impurities existing in the PI and gate insulator were diffused into the channel during the fabrication process. We demonstrate that these impurities and oxygen vacancies in the ITZO channel/gate insulator may cause degradation of the electrical characteristics and bias stability. Therefore, in order to realize high performance oxide TFTs for flexible displays, it is necessary to develop a buffer layer (e.g., $Al_2O_3$) that can sufficiently prevent the diffusion of impurities into the channel.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1009-1013
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• 2009

In this study, we have been synthesized the dielectric layer using pure organic and organic-inorganic hybrid precursor on flexible substrate for improving of the organic thin film transistors (OTFTs) and, design and fabrication of organic thin-film transistors (OTFTs) using small-molecule organic semiconductors with pentacene as the active layer with record device performance. In this work OTFT test structures fabricated on polymerized substrates were utilized to provide a convenient substrate, gate contact, and gate insulator for the processing and characterization of organic materials and their transistors. By an adhesion development between gate metal and PI substrate, a PI film was treated using $O_2$ and $N_2$ gas. The best peel strength of PI film is 109.07 gf/mm. Also, we have studied the electric characteristics of pentacene field-effect transistors with the polymer gate-dielectrics such as cyclohexane and hybrid (cyclohexane+TEOS). The transistors with cyclohexane gate-dielectric has higher field-effect mobility, $\mu_{FET}=0.84\;cm^2/v_s$, and smaller threshold voltage, $V_T=-6.8\;V$, compared with the transistor with hybrid gate-dielectric.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.49-54
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• 2005

Flexible copper clad laminates (FCCL) fabricated by sputtering has advantages in fine pitch etching and dimensional accuracy than previous casting or laminating type FCCL, But its lower adhesion is inevitable technical challenge to solve for commercializing it. Chromium (Cr) which strongly reacts with O moiety was used as tie-coating layer in order to improve low adhesion between copper (Cu) and polyimide (PI). Sputtering raw polyimide (SRPI) and casting raw polyimide (CRPI) were used as substrates at this research. PI was pretreated by plasma before sputtering, and each sample was varied with RF power and Cr thickness on sputtering. Peel strength of the FCCL on SRPI was higher than that on CRPI. Adhesion had maximum value when 10 nm of Cr was deposited on SRPI by RF power of 50 W. It seems to be by the formation of Cu-Cr-O solid solution at the metal-PI interface.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.3
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• pp.586-590
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• 2009

Recently, an AC Plasma Display Panels(PDP) with the metal sustain electrodes have been reported in order to reduce the manufacturing cost of the AC PDP. However, the luminance and efficacy of the AC PDP with metal electrodes are worse than those of the AC PDP with ITO electrodes. In this paper, various ${\prod}$type metal electrodes are suggested, in order to improve the electro-optical characteristics of the AC PDP with metal electrodes. Among the suggested electrode types, luminance of Hump electrode structure is higher by $40\;cd/m^2$ and discharge current of Asymmetry electrode structure is lower by 5% than those of Pi electrode structure, respectively. Moreover, $T_1$ of Hump electrode structure is reduced to 10% as compared with Pi electrode structure in address period for ADS driving scheme. In all aspects, the characteristics of Hump and Asymmetry electrode structure show best performance.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.101-107
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• 2004

각종 전자기기의 소형화, 고성능화 요구에 따라 회로 또는 기판의 고집적화에 따른 대안으로 도입된 COF(Chip On Film)공정에서 PI(polyimide)/buffer layer/Cu의 접착력 개선을 목적으로 본 연구가 진행 되었다. 그리고 buffer layer로써 Cr을 증착 할 때 부착력의 개선을 목적으로 개질처리를 할 때는 RF plasma장비를 사용하였다. 실험 변수로는 peel strength에 대한 buffer layer의 종류와 증착시간, 표면 개질처리시 $O_2$/Ar비이다. Buffer layer의 종류에 따른 접착력은 Cr보다 Ni이 우수하였고 peel strength와 Cu THK는 같은 buffer layer의 증착 structure에서 비례 관계를 나타냈으며, Cr의 증착 시간과 Cu의 증착 시간을 변수로 peel strength test한 값은 Cr증착시간이 30초, Cu증착시간이 20분일때 40g/mm로 최적의 접착력이 나타났다. 증착전 PI의 개질 처리시 $O_2$/Ar 유량비에 따른 peel strength값은 $O_2$/Ar유량비가 증가 할수록 향상되었으며, 2/5에서 최고값인 58g/mm가 나타났다. 그 이상에서는 오히려 감소하였다.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05b
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• pp.946-950
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• 1998

다목적 양성자 가속기(Korea Multi-purpose Accelerator Complex; KOMAC)를 위한 Duoplasmatron이온원이 설계 및 제작되었다. 빔인출을 위한 60㎸ 고전압시스템의 테스트가 수행되었으며 50㎸인출전압에서 20㎃의 수소 빔을 인출 할수 있었다. 이 이온원은 30㎸ 인출전압에서 20㎃이상의 빔전류와 90% 빔전류에서 0.5$\pi$mm mrad정도의 낮은 수준의 빔에미턴스와 약 50% 양성자분을을 얻었다. 고밀도 고주파 플라즈마 원(예를들어 헬리콘와 Transformer coupled plasma;TCP 플라즈마원)이 양성자 및 수소 음이온원으로의 유용성에 대한 연구가 진행중이다.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1643-1645
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• 2001

플라즈마 잠김 이온주입 장치를 개조하여 플라즈마 잠김 이온주입 및 증착 장치를 제작하였다. 박막을 증착하기 위하여 마그네트론 스퍼터를 장착하였다. Si 시료에 TiN막을 형성하기 위하여 $PI^3$