• 반도체디스플레이기술학회지
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• 제19권4호
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• pp.18-21
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• 2020

Undetected wafer slip during the lift pin-down motion in semiconductor equipment may affect the center to edge variation, wafer warpage, and pattern misalignment in plasma equipment. Direct measuring of the amount of wafer slip inside the plasma process chamber is not feasible because of the hardware space limitation inside the plasma chamber. In this paper, we demonstrated a practice for the wafer lift pin-up and down motions with respect to the gear ratio, operating voltage, and pulse width modulation to maintain accurate wafer position using remote control linear servo motor with an experimentally designed chamber mockup. We noticed that the pin moving velocity and gear ratio are the most influencing parameters to be control, and the step-wised position control algorithm showed the most suitable for the reduction of wafer slip.

• 조명전기설비학회논문지
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• 제20권8호
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• pp.6-14
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• 2006

본 논문은 TFT-LCD(Thin Film Transistor Liquid Crystal Display) PECVD(Plasma Enhanced Chemical Vapor Deposition) 장비 공정용 챔버(Chamber) 세정을 위한 새로운 플라즈마 세정방법에 적합한 플라즈마 발생방법과 플라즈마 발생을 위한 고주파 전원장치의 전력회로에 관한 연구이다. 세정에 요구되는 고밀도 플라즈마는 안테나 형태의 기존 ICP(Inductively Coupled Plasma) 방식에 강자성체인 페라이트 코어를 적용하므로 써 $1{\times}10^{11}[EA/cm^3]$이상의 고밀도 플라즈마 발생을 가능하게 하였다. 플라즈마 발생을 위한 400[kHz] 고주파 전력 변환장치의 경우 범용 HB(Half Bridge) 인버터 방식을 적용하여 플라즈마 부하에서도 안정적인 영전압 스위칭 동작을 확인 하였다. 변압기 직렬결합 방식을 사용한 10[kW] 고출력을 통해 $A_r$과 $NF_3$가스 분위기하에서 플라즈마의 밀도와 $NF_3$가스 분해율을 측정하므로서 고주파 전력 변환 장치의 성능을 입증하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 심포지엄 논문집 정보 및 제어부문
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• pp.132-134
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• 2006

To improve equipment throughput and device yield, a malfunction in plasma equipment should be accurately diagnosed. A recognition model for plasma diagnosis was constructed by applying neural network to scanning electron microscope (SEM) image of plasma-etched patterns. The experimental data were collected from a plasma etching of tungsten thin films. Faults in plasma were generated by simulating a variation in process parameters. Feature vectors were obtained by applying direct and wavelet techniques to SEM Images. The wavelet techniques generated three feature vectors composed of detailed components. The diagnosis models constructed were evaluated in terms of the recognition accuracy. The direct technique yielded much smaller recognition accuracy with respect to the wavelet technique. The improvement was about 82%. This demonstrates that the direct method is more effective in constructing a neural network model of SEM profile information.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.125-129
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• 2022

The current display technology tends to be highly integrated with high resolution, the element size is gradually downsized, and the structure becomes complicated. Inductively coupled plasma (ICP) dry etcher of various types of etching equipment is a structure that places a large multi-divisional antenna source on the top lid, passes current to the Antenna, and generates plasma using the induced magnetic field generated at this time. However, in the case of a device of a large area size, a support that can withstand a load structurally is necessary, and when these support portions are applied, arrangement of antenna becomes difficult, which causes reduction in uniformity. As described above, the development of antenna source of a large area having a uniform plasma density on the whole surface is difficult to restrict hardware (H/W). As a solution to this problem, we confirmed the change in uniformity of plasma by applying two kinds of specific shape faraday shield(FICP) to the lower part of the large area upper lid antenna of 6 and 8th more than that generation size. In this thesis, we verify the faraday shield effect which can improve plasma uniformity control of ICP dry etcher equipment applied to medium and large displays.

• 전력전자학회논문지
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• 제15권4호
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• pp.274-281
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• 2010

본 논문에서는 반도체 플라즈마 식각 시스템의 균일도 향상을 위한 CCP와 ICP 결합 임피던스정합 장치를 제안한다. 이중주파수 전원공급 장치는 CCP와 ICP로 구성되어 있고 첫 번째 구성은 고집적화를 위해 페라이트 코어를 사용한 유도 결합 플라즈마(ICP : Inductively Coupled Plasma)방식이며, 두 번째 구성은 셀 전체의 균일도 향상을 위한 용량 결합 플라즈마(CCP : Capacitively Coupled Plasma)방식이다. 제안된 시스템은 반도체 장비 산업에서 요구되는 높은 생산성을 실현할 수 있다. 본 논문에서는 제안된 시스템의 타당성을 검증하기 위해 CCP와 ICP 결합 임피던스정합 장치를 제작하였고, 이론적 분석과 27.12MHz 와 400kHz의 조건에서 시뮬레이션 및 실험을 진행하였다

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 심포지엄 논문집 정보 및 제어부문
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• pp.99-101
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• 2006

Auto-Cross Correlated time series (ACTS) model was constructed by using the backpropagation neural network. The performance of ACTS model was evaluated with sensor information collected from a large volume, industrial plasma-enhanced chemical vapor deposition system. A total of 18 sensor information were collected. The effect of inclusion of past and future information were examined. For all but three sensor information with a large data variance demonstrated a prediction error less than 3%. By integrating ACTS model into equipment software, process quality can be more stringently monitored while improving device throughput.

• 한국염색가공학회지
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• 제5권3호
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• pp.194-205
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• 1993

Plasma polymerization in prepared glow discharge was carried out to improve the bathochromic of dyed PET fabrics by using silicon containing vinyl monomer in plasma polymerization equipment which consists of a pair of electrodes was connected to the 13.56MHz RF generator. The optimum condition for the bathochromic effect was investigated on various plasma polymeriztion parameters. By plasma polymerization used silicon containing vinyl monomer, the bathochromic of dyed PET fabrics was very enhanced. The optimum conditions on this equipment were as follows ; electrode distance : 3cm, discharge output : 60W, gas pressure : 0.3 Torr, monomer flow rate : 30㎤/min. plasma polymerization time : 60sec. The apparent strength of plasma polymerized PET fabrics was increased about 40∼47% with decreasing about 3 of L value.

• Journal of Electrical Engineering and Technology
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• 제10권4호
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• pp.1804-1814
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• 2015

In order to explore the characteristics of electrons in DC negative corona discharge, an improved plasma chemical model is presented for the simulation of bar-plate DC corona discharge in dry air. The model is based on plasma hydrodynamics and chemical models in which 12 species are considered. In addition, the photoionization and secondary electron emission effect are also incorporated within the model as well. Based on this model, electron mean energy distribution (EMED), electron density distribution (EDD), generation and dissipation rates of electron at 6 typical time points during a pulse are discussed emphatically. The obtained results show that, the maximum of electron mean energy (EME) appears in field ionization layer which moves towards the anode as time progresses, and its value decreases gradually. Within a pulse process, the electron density (ED) in cathode sheath almost keeps 0, and the maximum of ED appears in the outer layer of the cathode sheath. Among all reactions, R1 and R2 are regarded as the main process of electron proliferation, and R₂₂ plays a dominant role in the dissipation process of electron. The obtained results will provide valuable insights to the physical mechanism of negative corona discharge in air.

• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.43-48
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• 2020

The demand for stable plasma has been on the rise because of the increased delivery power amount in the chamber for improving productivity, and fast and accurate plasma impedance matching become a crucial performance measure for radio frequency (RF) power system in semiconductor manufacturing equipment. In this paper, the overall impedance matching was understood, and voltage and current values were extracted with voltage - current (VI) probe to measure plasma impedance in real-time. Actual matching data were analyzed to derive calibration coefficient for V and I measurements to understand the characteristics of VI probe, and we demonstrated the tendency of RF impedance matching according to changes in load impedance. This preliminary empirical research can contribute to fast RF matching as well as advanced equipment control for the next level of detailed investigation on embedded system based-RF matching controller.

• 반도체디스플레이기술학회지
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• 제23권1호
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• pp.52-55
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• 2024

In this paper, a state change study was conducted through Frequency Domain Reflectometry (FDR) technology for the process chamber of plasma equipment for semiconductor manufacturing. In the experiment, by direct connecting the network analyzer to the RF matcher input of the 300 mm plasma enhanced chemical vapor deposition (PECVD) chamber, S11 was measured in a situation where plasma was not applied, and the frequency domain reacting to the chamber state change was searched. Response factors to changes in the status, such as temperature, spacing of the heating chuck, internal pressure difference, and process gas supply state were confirmed. Through this, the frequency domain in which a change in the reflection value was detected through repeated experiments. The reliability of the measured micro-displacement was verified through reproducibility experiments.