• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.7
• /
• pp.424-432
• /
• 2000

The plasma surface treatment, using hydrogen gas, of the silicon wafer was investigated as a pretreatment for the application to silicon-on-insulator (SOI) wafers using the silicon direct bonding technique. The chemical reactions of hydrogen plasma with surfaces were used for both the surface activation and the removal of surface contaminants. As a result of exposure of silicon wafer to the plasma, an active oxide layer was formed on the surface, which was rendered hydrophilic. The surface roughness and morphology were estimated as functions of plasma exposing time as well as of power. The surface became smoother with decreased incident hydrogen ion flux by reducing plasma exposing time and power. This process was very effective to reduce the carbon contaminants on the silicon surface, which was responsible for a high initial surface energy. The initial surface energy measured by the crack propagation method was 506 mJ/m2, which was up to about three times higher than that of a conventional RCA cleaning method.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2009.10a
• /
• pp.687-688
• /
• 2009

• Journal of Powder Materials
• /
• v.9 no.3
• /
• pp.189-198
• /
• 2002

In this work, transient liquid phase (TLP) bonding of Ni-Cr heat resisted cast alloy (HP) was investigated. And also the behaviors of the solid particles distributed in the interlayer during TLP bonding were investigated. The MBF-60 and solid particles (Ni, Fe, and $Al_2O_3$ powders respectively) added MBF-60 which will be a liquid phase coexisting with solid particles at the bonding temperature were used as insert metal. The effective and sound bonding was possible by spark plasma sinter-bonding due to the differences of electric resistance between base metal and liquid insert layer which creates high temperature region. During the isothermal solidification, $Al_2O_3$ particles and solid particles of liquid phase sintered insert metal have shown no growth, while Ni and Fe particles grow rapidly. In this TLP bonding using the MBF-60 and distributed Fe, Ni particles as insert materials, the whole isothermal solidification process was dominated by the growth rate of the solid particles distributed in the interlayer.

• Transactions on Electrical and Electronic Materials
• /
• v.1 no.1
• /
• pp.6-11
• /
• 2000

The hydrogen plasma treatment of silicon wafers in the reactive ion-etching mode was studied for the application to silicon-on-insulator wafers which were prepared using the wafer bonding technique. The chemical reactions of hydrogen plasma with surface were used for both surface activation and removal of surface contaminants. As a result of exposure of silicon wafers to the plasma, an active oxide layer was found on the surface. This layer was rendered hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposing time and power. In addition, the surface became smoother with the shorter plasma exposing time and power. The value of initial surface energy estimated by the crack propagation method was 506 mJ/㎡, which was up to about three times higher as compared to the case of conventional direct using the wet RCA cleaning method.

• Korean Journal of Materials Research
• /
• v.22 no.4
• /
• pp.211-214
• /
• 2012

Optimal conditions for HA plasma spray-coating on Ti6Al4V alloy were investigated in order to obtain enhanced bone-bonding ability with Ti6Al4V alloy. The properties of plasma spray coated film were analyzed by SEM, XRD, surface roughness measurement, and adhesion strength test because the film's transformed phase and crystallinity were known to be influential to bone-bonding ability withTi6Al4V alloy. The films were formed by a plasma spray coating technique with various combinations of plasma power, spray distance, and auxiliary He gas pressure. The film properties were analyzed in order to determine the optimal spray coating parameters with which we will able to achieve enhanced bone-bonding ability with Ti6Al4V alloy. The most influential coating parameter was found to be the plasma spray distance to the specimen from the spray gun nozzle. Additionally, it was observed that a relatively higher film crystallinity can be obtained with lower auxiliary gas pressure. Moderate adhesion strength can be achievable at minimal plasma power. That is, adhesion strength is minimally dependent on the plasma power. The combination of shorter spray distance, lower auxiliary gas pressure, and moderate spray power can be recommended as the optimal spray conditions. In this study, optimal plasma spray coated films were formed with spray distance of 70 mm, plasma current of 800 A, and auxiliary gas pressure of 60 psi.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.121-121
• /
• 2011

Graphene formed by chemical vapor deposition was exposed to the various plasmas of Ar, O2, N2, and H2 to examine its effects on the bonding properties of graphene to metal. Upon the Ar plasma exposure of patterned graphene, the subsequently deposited metal electrodes remained intact, enabling successful fabrication of field effect transistor (FET) arrays. The effects of enhancing adhesion between graphene and metals were more evident from O2 plasmas than Ar, N2, and H2 plasmas, suggesting that chemical reaction of O radicals induces hydrophilic property of graphene more effectively than chemical reaction of H and N radicals and physical bombardment of Ar ions. From the electrical measurements (drain current vs. gate voltage) of field effect transistors before and after Ar plasma exposure, it was confirmed that the plasma treatment is very effective in controlling bonding properties of graphene to metals accurately without requiring buffer layers.

• The Journal of Korea Robotics Society
• /
• v.11 no.3
• /
• pp.140-145
• /
• 2016

In this paper, we fabricate arrayed-type flexible capacitive touch sensor using liquid metal (LM) droplets (4 mm spatial resolution). Poly-4-vinylphenol (PVP) layer is used as a dielectric layer on the electrode patterned Polyethylene naphthalate (PEN) film. Bonding tests between hydroxyl group (-OH) on the PVP film and polydimethylsiloxane (PDMS) are conducted in a various $O_2$ plasma treatment conditions. Through the tests, we can confirm that non-$O_2$ plasma treated PVP layer and $O_2$ plasma treated PDMS can make a chemical bond. To measure dynamic range of the device, one-cell experiments are conducted and we confirmed that the fabricated device has a large dynamic range (~60 pF).

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2010.05a
• /
• pp.663-664
• /
• 2010

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.4
• /
• pp.221-225
• /
• 2014

Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.

• The korean journal of orthodontics
• /
• v.34 no.4 s.105
• /
• pp.333-342
• /
• 2004

The purpose of this study was to evaluate the clinical effectiveness of a plasma arc light and light emitting diode (LED), compared with shear bond strength and the failure pattern of brackets bonded with visible light in direct bonding. Brackets were bonded with Transbond XT to 60 human premolars embedded in the resin blocks according to different light-curing methods. Then, the shear bond strength of each group was measured using a universal testing machine (Instron) and the adhesive failure pattern after debonding was visually examined by light microscope. The results were as follows: 1. The shear bond strength showed no significant difference between the visible light and light emitting diode, but the plasma arc light exhibited a significantly lower shear bond strength compared with the visible light and light emitting diode. 2. In the visible light and light emitting diode, adhesive failure patterns were similar. Bond failure occurred more frequently at the enamel-adhesive interface. 3. The bonding failure of brackets bonded with plasma arc light occurred more frequently at the bracket-adhesive interface. The results of this study suggest that plasma arc light, light emitting diode and visible light are all clinically useful in the direct bonding of orthodontic brackets.