• Korean Journal of Computational Design and Engineering
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• v.6 no.1
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• pp.31-39
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• 2001

Presented in this paper are algorithms to compute the positions of vertices and equations of edges of the Voronoi diagram of a circle set. The circles are located in a Euclidean plane, the radii of the circles are not necessarily equal and the circles are not necessarily disjoint. The algorithms correctly and efficiently work when the correct topology of the Voronoi diagram was given. Given three circle generators, the position of the Voronoi vertex is computed by treating the plane as a complex plane, the Z-plane, and transforming it into another complex plane, the W-plane, via the Mobius transformation. Then, the problem is formulated as a simple point location problem in regions defined by two lines and two circles in the W-plane. And the center of the inverse-transformed circle in Z-plane from the line in the W-plane becomes the position of the Voronoi vertex. After the correct topology is constructed with the geometry of the vertices, the equations of edge are computed in a rational quadratic Bezier curve farm.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.37.1-37.1
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• 2011

1990년 나카무라 연구팀에서 청색이 개발된 이래로 LED는 눈부시게 발전해 왔으며, 청색 LED로 인하여 조명용 백색 LED가 급격히 발전하고 있다. 현재까지 개발되고 있는 조명용 백색 LED는 통상적으로 c축 방향의 사파이어 기판위에 GaN film을 성장하여 제작하지만 원천적으로 생기는 자발분극과 압전분극 영향 때문에 양자우물에서의 밴드를 기울게 만들고 이것은 캐리어 재결합율을 감소시켜 그 결과 양자 효율을 낮춘다. 이러한 근본적인 문제를 해결하기 방안은 사파이어 기판에서 c-plane이외의 결정면에서 무분극(혹은 반극성) GaN LED를 성장하여 양자효율을 극대화하여 고효율 LED를 구현할 수 있음. 본 연구에서는 Carbonization mask를 이용하여 r-plane sapphire기판상에 a-plane GaN의 ELOG성장 방법에 대하여 연구하였다. Carbonization mask를 이용하면 기존에 사용되던 SiOx 나 SiNx 막을 사용하지 않고 mask를 만들 수 있다는 장점을 가지고 있으며, 이러한 mask를 이용하여 r-plane sapphire위에 ELOG법을 이용한 a-plane GaN을 성장할 수 있음을 실험을 통해 보이려 한다. ELOG 성장이 이루어 지는지 확인을 위하여 SEM을 통하여 ELOG가 되는 과정을 분석하였으며, 표면의 거칠기를 알아보기 위하여 AFM측정을 시행하였다. 실험 결과 약 20 um 두께로 성장되면서 merge가 되는 것을 확인 하였다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.1 s.256
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• pp.97-104
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• 2007

Vibration analysis of a rigid body supported by in-parallel linear springs can be greatly simplified by utilizing the conditions for a plane of symmetry. The vibration modes of an oscillatory system having plane of symmetry are classified into the in-plane and out-of-plane modes. From the viewpoint of screw theory, they represent respectively the vibration axes perpendicular to the plane of symmetry and lying in the plane of symmetry. In this paper, the sets of orthogonal and mutually intersecting three springs are used as resilient support of a rigid body. The geometrical conditions for the system to have a plane of symmetry and diagonalized stiffness matrix are presented. From the orthogonality of the vibration modes with respect to the inertia matrix, the geometrical relation between the reaction wrenches and the vibration modes are derived. This geometrical relation is then used to get the cubic design equation for the design of out-of-plane modes. The numerical design example of engine mounts is presented in order to explain the suggested design technique.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.148-148
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• 2011

일반적으로 LED 제작에 사용되는 c-plane GaN는 c축 방향으로 발생하는 분극의 영향을 받게 된다. 분극은 LED내 양자우물의 밴드를 기울게 하여 그 결과 전자와 홀의 재결합 확률을 감소시켜 낮은 내부양자효율을 가지게 된다. 이러한 문제를 해결하기 위한 여러 가지 방법들이 제시되었는데 그 중에서도 특히 a-plane 혹은 m-plane면과 같은 무분극 면을 사용하는 GaN LED가 주목받고 있다. 그 이유는 무분극 면은 분극이 발생하는 c축과 수직이기 때문에 분극의 영향을 받지 않아 높은 내부 양자효율을 가질수 있다. 본 연구에서는 MOCVD 장비를 사용하여 2인치 r-plane 사파이어 기판위에 3um두께의 a-plane GaN을 성장하였다. 그위에 2um정도로 Si을 도핑하여 n-type GaN 형성한후 단일 양자우물, 그리고 Mg을 도핑하여 p-type GaN을 성장하였다. 장파장대역의 a-plane LED의 특성을 알아보기 위해서 양자우물 형성시 In의 조성비를 높였다. 일반적인 포토리소그래피 공정과 Dry etching 공정을 사용하여 메사구조를 형성하였으며 Ti/Al/Pt/Au와 Ni/Au를 각각 n-type과 p-type의 전극 물질로 사용하였다. 제작된 LED의 특성을 파악하기 위해서 인가전류를 0부터 100mA까지 출력 스펙트럼을 측정하였으며 orange대역의 파장을 갖는 LED를 얻었다. 인가전류별 Peak 파장의 변화와 반측폭의 변화를 파악하여 장파장 대역의 a-plane LED의 특성을 확인하였다.

• Smart Structures and Systems
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• v.20 no.5
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• pp.563-572
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• 2017

The safety of structures is closely associated with the structural out-of-plane behavior. In particular, long and slender beam structures have been increasingly used in the design and construction. Therefore, an evaluation of the lateral and torsional behavior of a structure is important for the safety of the structure during construction as well as under service conditions. The current contact measurement method using displacement meters cannot measure independent movements directly and also requires caution when installing the displacement meters. Therefore, in this study, a vision-based system was used to measure the in-plane and out-of-plane displacements of a structure. The image processing algorithm was based on reference objects, including multiple targets in Lab color space. The captured targets were synchronized using a load indicator connected wirelessly to a data logger system in the server. A laboratory beam test was carried out to compare the displacements and rotation obtained from the proposed vision-based measurement system with those from the current measurement method using string potentiometers. The test results showed that the proposed vision-based measurement system could be applied successfully and easily to evaluating both the in-plane and out-of-plane movements of a beam including twisting rotation.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.7
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• pp.101-106
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• 2004

Measurements of linear motion accuracy for one axis of NC lathe have achieved with laser interferometer system, but measurement of plane motion accuracy for two axes on zx-plane of NC lathe have not achieved with the above system. Therefore in this study, measuring unit system is organized using two optical linear scales in order to acquire error. data during of plane motion of ATC(Automatic Tool Change.) of NC lathe by reading zx-plane coordinates. Two optical linear scales of measuring unit are fixed on zx-plane of NC lathe, and moving part of the scales are fixed to the ATC and then error motion data of z, x-coordinates of the ATC are received from the scales through the PC counter card inserted in computer at constant time intervals using tick pulses coming out from computer. And then, error motion data files acquired from measuring are saved in computer memory and the aspect of plane motion are modeled to plots, and range of the error data, means. average deviations, and standard deviations etc. are calculated by means of statistical treatments using computer programs.

• The korean journal of orthodontics
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• v.28 no.5 s.70
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• pp.865-875
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• 1998

The purpose of this study was to investigate the angle formed by the Sella-Nasion(SN) plane and Frankfort-Horizontal(FH) plane and evaluate the correlation and difference of the FH plane to other horizontal reference planes. Through this study we hope to present a basis for selecting a horizontal reference plae which can be implemented in cephalometric studies and in surgical orthodontic treatment planning. 600 subjects were chosen following a clinical examination md lateral cephlometric X-rays were taken. According to cephalometric analysis the subjects were classified into 3 groups , Skeletal Class I malocclusion or normal occlusion group(male 50, female 50), Skeletal Class II malocclusion group(male 50, female 65) and Skeletal Class III malocclusion group(male 50, female 50). The results were as follows. 1. The angle formed by the SN plane and FH plane showed no difference among the malocclusion groups, but there was a significant sex difference. For males the angle measured was $7.47^{\circ}{\pm}2.40^{\circ}$ whereas for females it was $8.93^{\circ}{\pm}2.72^{\circ}$. 2. The angle formed by the SN plane or FH plane and Mandibular plane was higher in females for all malocclusion groups. This angle in the Skeletal Class I malocclusion group was lower than in the other two groups. 3. There was no difference among the sexes or malocclusion groups considering the angle formed by the FH plane and Palatal plane. 4. The genial angle in the Skeletal Class III malocclusion group was higher than in the Skeletal Class I and Class II malocclusion groups in both sexes.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.25-32
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• 2011

We have studied on the slicing and polishing processes of R-plane sapphire wafers for the substrates of UHB nonpolar a-plane GaN LED. The fabrication conditions of the R-plane and c-plane wafers were influenced by the large anisotropic properties (mechanical properties) of the sapphire. The slicing process was more affected by the anisotropic properties of R-plane than the polishing process. When the slicing direction was $45^{\circ}$ to the a-flat, the slicing time was shorter and the quality of as-slicing wafers was better than the slicing direction of normal to the a-flat. The MRR(Material removal rate) of mechanical polishing processes such as lapping and DMP(Diamond mechanical polishing) did not show significant differences between the R-plane and c-plane. The MRR of the c-plane was about two times higher than that of R-planes at the CMP(Chemical mechanical polishing) process due to the formation of hydrolysis reaction layers on the surface of the c-plane.

• Journal of Korea Society of Industrial Information Systems
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• v.22 no.3
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• pp.39-47
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• 2017

The Depth Picture can be Encoded by the Plane Coding Mode that is the Method for Coding Mode by Considering a Part of the Picture as the Plane. In this Paper, we Propose the Method of Determining the Variable-sized Block for Variable Block Coding in the Plane Coding Mode for the Depth Picture. The Depth Picture Can be Encoded in the Plane Coding Through Estimating the Plane Which is Close to Pixels in the Block Using Depth Information. The Variable-sized Block Coding in the Plane Coding can be Applied as Follows. It Calculates the Prediction Error between Predicted Depths by the Plane Estimation and the Measured Depths. If Prediction Error is Below the Threshold, the Block is Encoded by Current Size. Otherwise, it Divides the Block and Repeats Above. If the Block is Divided Below the Minimum Size, the Block is not Encoded by the Plane Coding Mode. The Result of the Simulation of the Proposed Method Shows that the Number of Encoded Block is Reduced to 19% as Compared with the Method Using the Fixed-sized Block in the Depth Picture Composed of one Plane.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.