• Journal of Welding and Joining
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• 제35권3호
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• pp.15-20
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• 2017

In this paper, two types of assemblies using CNT-filled SACAs (with 0.03 wt% CNTs and without CNT) were prepared to investigate the influence of carbon nanotubes (CNTs) on the reliability properties of solderable anisotropic conductive adhesives (SACAs) with a low-melting-point alloy (LMPA). Two types of reliability test including thermal shock (TS: -55 to $125^{\circ}C$, 1000 cycles) and high-temperature and high-humidity (HTHH: $85^{\circ}C$, 85% RH, 1000 h) tests were conducted. The SACA assemblies with and without CNTs showed stable electrical reliability properties due to the formation of wide and stable metallurgical interconnection between corresponding metallizations by the molten LMPA fillers. Although the mechanical pull strength of CNT-filled SACA assemblies was decreased after thermal aging (because of the excessive layer growth and planarization of the IMCs), the CNT-filled SACA with 0.03wt% CNTs showed enhanced mechanical reliability properties compared with the SACA assemblies no CNTs. This enhancement in mechanical performance was due to the reinforcement effect of the CNTs. These results demonstrate that CNTs within the CNT-filled SACAs can improve the reliability properties of CNT-filled SACAs joints due to their superior physical properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.529-529
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• 2007

Ruthenium (Ru) is a white metal and belongs to platinum group which is very stable chemically and has a high work function. It has been widely studied to apply Ru as an electrode material in memory devices and a Cu diffusion barrier metal for Cu interconnection due to good electrical conductivity and adhesion property to Cu layer. To planarize deposited Ru layer, chemical mechanical planarization(CMP) was suggested. However, abrasive particle can induce particle contamination on the Ru layer surface during CMP process. In this study, zeta potentials of Ru and interaction force of alumina particles with Ru substrate were measured as a function of pH. The etch rate and oxidation behavior were measured as a function of chemical concentration of several organic acids and other acidic and alkaline chemicals. PRE (particle removal efficiency) was also evaluated in cleaning chemical.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1283-1287
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• 2004

The design rules are being more strict with requirement of operation speed and development of IC industry. For this reason, required minimum line-width has been narrowed under sub-micron region. As the length of minimum line-width is narrowed, local and global planarization are being prominent. CMP(Chemical-Mechanical Polishing), one of the planarizarion technology, is a process which polishes with the ascent of chemical reaction and relative velocity between pad and wafer without surface defects. CMP is performed with a complex interaction among many factors, how CMP has an interaction with such factors is not evident. Accordingly, the studies on this are still carrying out. Therefore, an examination of the CMP phenomena and an accurate understanding of compositive factors are urgently needed. In this paper, we will consider of the relations between the effects of temperature which influences many factors having an effect on polishing results and the characteristics of CMP in order to understand and estimate the influence of temperature. Then, through the interaction of shown temperature and polishing result, we could expect to boost fundamental understanding on complex CMP phenomena.

• 대한금속재료학회지
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• 제47권11호
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• pp.748-753
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• 2009

The surface morphology and the surface roughness of n-type SiC induced by wet-treatment using 45% KOH and buffered oxide etchant (BOE-1HF : $6H_2O$) were investigated by atomic force microscopy (AFM). While Si-face of SiC could be etched by alkali solutions such as KOH, acidic solutions such as BOE were hardly able to etch SiC. When the rough SiC samples were used, the surface roughness of etched sample was decreased after wet-treatment regardless of etchant, due to the planarization the of surface by widening of scratches formed by mechanical polishing. It was observed that the initial etching was affected by the energetically unstable sites, such as dangling bond and steps. However, when a relatively smooth sample was used, the surface roughness was rapidly increased after treatment at $180^{\circ}C$ for 1 hr and at room temperature for 4 hr by using KOH solution, resulting from the nano-sized structures such as pores and bumps. This indicates that porous SiC surface can be achieved by using purely chemical treatment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.117-117
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• 2008

In MIM capacitor, poly-Si bottom electrode is replaced with metal bottom electrode. Noble metals can be used as bottom electrodes of capacitors because they have high work function and remain conductive in highly oxidizing conditions. In addition, they are chemically very stable. Among novel metals, Ru (ruthenium) has been suggested as an alternative bottom electrode due to its excellent electrical performance, including a low leakage of current and compatibility to high dielectric constant materials. Chemical mechanical planarization (CMP) process has been suggested to planarize and isolate the bottom electrode. Even though there is a great need for development of Ru CMP slurry, few studies have been carried out due to noble properties of Ru against chemicals. In the organic chemistry literature, periodate ion ($IO_4^-$) is a well-known oxidant. It has been reported that sodium periodate ($NaIO_4$) can form $RuO_4$ from hydrated ruthenic oxide ($RuO_2{\cdot}nH_2O$). $NaIO_4$ exist as various species in an aqueous solution as a function of pH. Also, the removal mechanism of Ru depends on solution of pH. In this research, the static etch rate, passivation film thickness and wettability were measured as a function of slurry pH. The electrochemical analysis was investigated as a function of pH. To evaluate the effect of pH on polishing behavior, removal rate was investigated as a function of pH by using patterned and unpatterned wafers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1288-1291
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• 2004

In this study, physical characteristics of alumina slurry on variation of pH value and the effect of non-ionic surfactants on alumina slurry for copper chemical mechanical planarization (CMP) slurry have been investigated. After pH value of the slurry with alumina abrasive was changed by adding various amount of $HNO^3$ or KOH, the differences of settling rate, particle size, and zeta-potential were estimated. Better settling rates were shown in slurries with alumina abrasive at near pH 1. Higher zeta-potential was shown at around pH 2 in alumina slurry and the point of zero charge (PZC) was measured at about pH $9\sim10$. Non-ionic surfactant was added in the slurry with 5wt% alumina abrasive to get its effect on slurry practically. Abrasive size was smaller increased when amount of surfactant increased in slurry with P-4 as abrasive; on the other side, it was smaller when amount of surfactant decreased with AES-12. Variation of zeta-potential has no tendency with adding surfactant; however, values of zeta-potential were between $35\sim50mV$. The proper amount of surfactant was $0.1\sim1.0wt%$ in slurry with P-4 and $0.5\sim1.0wt%$ in slurry with AES-12 respectively. Excellent dispersion stabilization was obtained by addition of non-ionic surfactant

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.803-809
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• 2005

Cerium ammonium nitrate (CAN) and nitric acid was used an etchant and an additive for Ru etching and polishing. pH and Eh values of the CAN and nitric acid added chemical solution satisfied the Ru etching condition. The etch rate increased linearly as the concentration of CAN increased. Nitric acid added solution had the high etch rate. But micro roughness of etched surfaces was not changed before and after etching, The removal rate of Ru film was the highest in $1wt\%$ abrasive added slurry, and not increased despite the concentration of alumina abrasive increased to $5wt\%$. Even Ru film was polished by only CAN solution due to the friction. The highest removal rate of 120nm/min was obtained in 1 M nitric acid and $1wt\%$ alumina abrasive particles added slurry. The lowest micro roughness value was observed in this slurry after polishing. From the XPS analysis of etched Ru surface, oxide layer was founded on the etched Ru surface. Therefore, Ru was polished by chemical etching of CAN solution and oxide layer abrasion by abrasive particles. From the result of removal rate without abrasive particle, the etching of CAN solution is more dominant to the Ru CMP.

• Transactions on Electrical and Electronic Materials
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• 제8권1호
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• pp.5-10
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• 2007

Using a reference slurry, ammonium dodecyl sulfate (ADS), an anionic and environmentally friendly surfactant, was investigated as an alternative to BTA for its inhibition and lubrication characteristics. Results demonstrated that the inhibition efficiency of ADS was superior to that of BTA. Coefficient of friction (COF) was the lowest when the slurry contained ADS. This suggested that adsorbed ADS on the surface provided lubricating action thereby reducing the wear between the contacting surfaces. Temperature results were consistent with the COF and removal rate data. ADS showed the lowest temperature rise again confirming the softening effect of the adsorbed surfactant layer and less energy dissipation due to friction. Spectral analysis of shear force showed that increasing the pad-wafer sliding velocity at constant wafer pressure shifted the high frequency spectral peaks to lower frequencies while increasing the variance of the frictional force. Addition of ADS reduced the fluctuating component of the shear force and the extent of the pre-existing stick-slip phenomena caused by the kinematics of the process and collision event between pad asperities with the wafer. By contrast, in the case of BTA, there were no such observed benefits but instead undesirable effects were seen at some polishing conditions. This work underscored the importance of real-time force spectroscopy in elucidating the adsorption, lubrication and inhibition of additives in slurries in CMP.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.508-514
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• 2004

A fluxgate magnetic sensor consists of a solenoid excitation coil, pick-up coil, and magnetic core. We presents the effect of magnetic core shape in a micromachined fluxgate sensor. To observe the performance of fluxgate sensor with magnetic core side width and gap, side width of 125 ${\mu}{\textrm}{m}$, 250 ${\mu}{\textrm}{m}$, and 500 ${\mu}{\textrm}{m}$ were designed in a rectangular-ring shaped core and the gaps of 0 ${\mu}{\textrm}{m}$, 50 ${\mu}{\textrm}{m}$, and 100 ${\mu}{\textrm}{m}$ were also fabricated in a racetrack shaped core. The solenoid coils and magnetic core were separated by benzocyclobutane(BCB) which had high insulation and good planarization characters. Copper coil patterns of 10 ${\mu}{\textrm}{m}$ width and 6${\mu}{\textrm}{m}$ thickness were electroplated on Ti(300 $\AA$) / Cu(1500 $\AA$) seed layers. 3 ${\mu}{\textrm}{m}$ thick N $i_{0.8}$F $e_{0.2.}$(permalloy) film for the magnetic core was also electroplated under 2000 gauss to induce the magnetic anisotropy. The magnetic core had the high DC effective permeability of ∼1,300 and coercive field of ∼0.1 Oe. Because the magnetic cores of 500 ${\mu}{\textrm}{m}$ side width and 0 gap had a low magnetic flux leakage, high sensitivity of ∼350 V/T were measured at excitation condition of 3 $V_{P-P}$ and 2 MHz square wave. The power consumption of ∼14 ㎽ was measured. The fabricated fluxgate sensor had the very small actual size of 3.0${\times}$1.7 $\textrm{mm}^2$. When two fluxgates were perpendicularly aligned in terrestrial field, their two-axis output signals were very useful to commercialize an electronic azimuth compass for the portable navigation system.m.m.m.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.46-49
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• 2003

Chemical mechanical polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of $Al_3O_3$ particles in presence of surfactant stabilizing the slurry.