• East Asian mathematical journal
• /
• 제29권1호
• /
• pp.53-68
• /
• 2013

We solve the geometric Hermite interpolation problem with planar Pythagorean-hodograph cubics. For every Hermite data, we determine the exact number of the geometric Hermite interpolants and represent the interpolants explicitly. We also present a simple criterion for determining whether the interpolants have a loop or not.

• Journal of information and communication convergence engineering
• /
• 제2권3호
• /
• pp.153-156
• /
• 2004

A planar active retrodirective four-element array with subharmonic phase conjugation mixers based on anti-parallel diode pairs (APDPs) is proposed. As compared to previous phase conjugation mixers using twice RF frequency for LO frequency, the proposed conjugation mixers need only half RF frequency so that it can be easily applied for millimeter-wave applications. Receiving, transmitting, local oscillator, and intermediate frequencies are 5.79, 5.81, 2.9 GHz, and 10 MHz. Monostatic RCS and Bistatic RCS measurements at source locations of $0^{\circ},\;-20^{\circ},\;and\;28^{\circ}$ show good agreement with the calculated data.

• 한국수학교육학회지시리즈A:수학교육
• /
• 제10권2호
• /
• pp.4-8
• /
• 1972

We consider the class (equation omitted) of all k-degenerate graphs, for k a non-negative integer. The class (equation omitted) and (equation omitted) are exactly the classes of totally disconnected graphs and of forests, respectively; the classes (equation omitted) and (equation omitted) properly contain all outerplanar and planar graphs respectively. The advantage of this view point is that many of the known results for chromatic number and point arboricity have natural extensions, for all larger values of k. The purpose of this note is to show that a graph G is (P$^3$)-realizable if G is planar and 3-degenerate.

• Journal of the Optical Society of Korea
• /
• 제7권1호
• /
• pp.1-6
• /
• 2003

Integration and miniaturization at the systems level are key requirements for photonics applications. Here, we describe the concept of planar integration of free-space optical systems and its use as an optical interconnection technology. Two specific applications will be considered, a parallel chip-to-chip interconnect and an optical clock distribution network.

• 충청수학회지
• /
• 제24권2호
• /
• pp.313-317
• /
• 2011

In this article, we consider an unbounded minimal graph $M{\subset}R^3$ which is contained in a slab. Assume that ${\partial}M$ consists of two Jordan curves lying in parallel planes, which is symmetric with the reflection under a plane. If the asymptotic behavior of M is also symmetric in some sense, then we prove that the minimal graph is itself symmetric along the same plane.

• 전기의세계
• /
• 제51권7호
• /
• pp.41-46
• /
• 2002

• 조명전기설비학회논문지
• /
• 제29권4호
• /
• pp.11-17
• /
• 2015

While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

• 한국전자파학회논문지
• /
• 제29권8호
• /
• pp.576-582
• /
• 2018

본 논문에서는 고정형 위상천이기를 이용한 동위상 급전 평면형 전력분배기 회로를 제안하였다. 정교한 빔 조향을 위한 위상배열안테나의 집적도가 높아짐에 따라, 소자 안테나에 동일한 위상 신호를 공급하기 위해 급전 선로의 길이를 조정하는 기존의 방법에는 공간적 제약이 존재하게 된다. 따라서 평면형 위상천이 기능을 갖는 결함접지구조를 이용하여 인위적인 급전선 길이 조정 없이 소자 안테나에 동일 위상 신호를 공급하는 전력분배기를 설계하였다. 결함접지구조는 선로의 삽입손실을 최소화하고, 위상 천이를 조절할 수 있도록 설계되었으며, 안테나 포트간 격리도와 평면형 구현이 가능한 분배기를 설계 제작하였다.

• 복식
• /
• 제52권5호
• /
• pp.61-77
• /
• 2002

The purpose of this study is to investigate difference and likeness on the form in women's Hanbok between the later Chosun Dynasty and modern times based on Belong's observing system for 'Apparel-Body Construct'. Belong's framework is composed 5 pairs of contrast word -'Closed or Open', 'Whole or Par', 'Planar Separation or Planar integration'. 'Flat or Rounded', and 'Determinate or Indeterminate'. Major findings of this study are as follows. First, the form of women's Hanbok in later Chosun Dynasty is 'Variably Closed', 'Part' and 'Rounded', whereas that in modern is 'Open', 'Whole' and 'Flat' Women's Hanbok of modern is lesser convex, and more open than that of later Chosun Dynasty according to increasing use of transparent textiles. Moreover, in comparison with old style, that of modern has the tendency of perceiving primarily whole feature by organic linkage of parts. Because of loose fit of Jeogori and rigid DongJong etc, characteristic of 'Plat' strengthened in modern Hanbok. Secondly, women's Hanbok in the later Chosun Dynasty and modern has common properties of 'Planar Seperation' and 'Determinate'. Women's Hanbok belongs to 'Planar Seperation', because the effect cognized to figure and ground. can be found between small parts and whole of Jegori, or can be found between the head and face. Jeuori and waist band, and Chima and under ware. Further more. it can be classified into 'Determinate'. because it use textiles which have no pattern un it or which show a subtle surface effect by texture changing.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
• /
• pp.88-88
• /
• 2003

Optical Emission Spectroscopy(OES) is a very important technology for real-time monitoring of plasma in a reactor during dry etching process. OES technology is non-invasive to the plasma process. It can be used to collect information on excitation and recombination between electrons and ions in the plasma. It also helps easily diagnose plasma intensity and monitor end-point during plasma etch processing. We studied high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar plasma with an OES as a function of processing pressure, RIE chuck power, ICP source power and gas composition. The scan range of wavelength used was from 400 nm to 1000 nm. It was found that OES peak Intensity was a strong function of ICP source power and processing pressure, while it was almost independent on RIE chuck power in BCl$_3$-based planar ICP processes. It was also worthwhile to note that increase of processing pressure reduced negatively self-induced dc bias. The case was reverse for RIE chuck power. ICP power and gas composition hardly had influence on do bias. We will report OES results of high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar Plasma in detail in this presentation.