• Korean Journal of Computational Design and Engineering
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• v.3 no.3
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• pp.183-191
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• 1998

There are many available algorithms based on the different approaches to solve the intersection problems between two curves. Among them, the implicitization method is frequently used since it computes precise solutions fast and is robust in lower degrees. However, once the degrees of curves to be intersected are higher than cubics, its computation time increases rapidly and the numerical stability gets worse. From this observation, it is natural to transform the original problem into a set of easier ones. Therefore, curves are subdivided appropriately depending on their geometric behavior and approximated by a set of rational quadratic Bezier cures. Then, the implicitization method is applied to compute the intersections between approximated ones. Since the solutions of the implicitization method are intersections between approximated curves, a numerical process such as Newton-Raphson iteration should be employed to find true intersection points. As the seeds of numerical process are close to a true solution through the mix-and-match process, the experimental results illustrates that the proposed algorithm is superior to other algorithms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.241-246
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• 2012

A layered planer SOFC module was designed from planar-type SOFC. It was prepared by multi-layered ceramic technology. To form the cathode and the anode in the layered structure, reliable channels should be made on the both side of electrolyte perpendicularly. However, monolithic SOFC using multi-layered ceramic technology hasn't been studied another group, and the warpage of electrolyte in the channel, also, hasn't been studied, when electrode is printed on the electrolyte. In this study, the channels are prepared with electrode printing, and their warpage are evaluated. In the case of YSZ without electrode, the warpages are nothing in the limit of measurement using optical microscope. The warpage of 'YSZ-NiO printed' increases than that of 'NiO printed', and also, the case of 'double electrode printed' is similar to 'YSZ-NiO printed'. It is thought that, in the printed electrolyte, the warpage is related to the difference of the sintering behavior of each material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.552-557
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• 2012

In this study, we have coated the inner surface of YSZ channel using LSM powder ink through depressurization process for making the cathode of a stacked planar-type SOFC module. To coat the surface of YSZ channel uniformly, we tried to find the optimum manufacturing condition for LSM ink. We used four different dispersants (BYK series) and two different solvents (ethanol and DMF) to make the LSM ink. It was revealed that the ink made with the ethanol solvent and the BYK-111 dispersant has the lowest viscosity, relatively low contact angle and most excellent dispersibility. After depressurizing a chamber filled with LSM ink and sintered YSZ channel, we have found that the YSZ channel was uniformly coated with LSM cathode. The LSM ink with 25 vol% BYK-111 showed the most uniform coating.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.681-684
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• 2016

This research was carried out experiments of variety IGBTs for industrial inverter and electric vehicle. The devices for this paper were planar gate IGBT, trench gate IGBT and dual gate IGBT and we designed using same design and process parameters. As a result of experiments, the electrical characteristics of planar gate IGBT were 1,459 V of breakdown voltage, 4.04 V of threshold voltage and 4.7 V of on-state voltage drop. And the electrical characteristics of trench gate IGBT were 1,473 V of breakdown voltage, 4.11 V of threshold voltage and 3.17 V of on-state voltage drop. Lastly, the electrical characteristics of dual gate IGBT were 1,467 V of breakdown voltage, 4.14 V of threshold voltage and 3.08V of on-state voltage drop. We almost knew that the trench gate IGBT was superior to dual gate IGBT in terms of breakdown voltage. On the other hand, the dual gate IGBT was better than the trench gate IGBT in terms of on state voltage drop.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.5
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• pp.635-643
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• 2003

Parametric study for the analysis of performance characteristics of a planar -type solid oxide fuel cell(SOFC) using computational flow analysis is conducted. A planar -type SOFC, which is composed by two gas channels (fuel and ai.) and one set of anode-electrolyte-cathode assembly, is modeled as a two -dimensional isothermal case. Results of computational analysis of flow field including distributions of mass fractions in gas channels are used to the performance analysis of the fuel cell. Flow analysis makes it possible to consider current density distributions along the length of the cell in the process of performance analysis of the SOFC. As results of parametric study, it is found that the mole fraction of fuel at the inlet of fuel channel, operating pressure and temperature are closely related to the performance characteristics of SOFC.

• Journal of Power Electronics
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• v.16 no.3
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• pp.1200-1208
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• 2016

Planar electromagnetic interference (EMI) filter has significant engineering significance to power electronic system integration and miniaturization. However, the value of differential mode capacitance cannot meet the demand of noise suppression because of the size limit of ceramics. In this case, the EMI filter of novel multilayers is recommended to address this issue. A novel integrated structure of EMI filter based on multilayer ceramic is proposed in this study. The inductance and capacitance of the new structure can be designed separately, which is an advantage in manufacturing. Insertion loss is measured more closely to the actual situation in this study, which is different from the condition where source and load impedances are both 50 Ω. In the process of designing a novel EMI filter, noise impedance is considered. Moreover, the prototype is created and applied to a small switching power supply, which verifies the effectiveness of the developed EMI filter.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.532-538
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• 2000

A double rectangular spiral inductor is fabricated using FeTaN films. The inductor is composed of internal coils sandwiched by magnetic layers. Characteristics of inductor performance are investigated with an emphasis on planarization of magnetic films. In the absence of the planarization process, the grating topology of upper magnetic films over coil arrays degrades the soft magnetic properties and the inductor performance. It also induces a longitudinal magnetic anisotropy with the easy axis aligned to the magnetic flux direction. This alignment prevents the upper magnetic films from contributing to the total induction. Glass bonding is a viable method for achieving a completely planar inductor structure. The planar inductor with glass bonding shows excellent performance : inductance of 1.1 H, Q factor of 7 (at 5 MHz), and the dc current capability up to 100 mA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.826-831
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• 2009

In this paper, a high power RF amplifier module using AlN substrate of high thermal conductivity has been proposed. This RF amplifier module has the advantage of compact size and effective heat dissipation for the packaging of high power chip. To fabricate the thru-hole and scribing line on AlN substrate, the key parameters of $CO_2$ laser were experimented. And then, microstrip lines and spiral planar inductors were fabricated on an AlN substrate using the thin-film process. The fabricated microstrip lines on the AlN substrate has an attenuation value of 0.1 dB/mm up to 10 GHz. The fabricated spiral planar inductor has a high quality factor, a maximum of about 62 at 1 GHz for a 5.65 nH inductor. Packaging of a RF power amplifier was implemented on an AlN substrate with thru-hole. From the measured results, the gain is 24 dB from 13 to 15 GHz and the output power is 33.65 dBm(2.3 W).

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.25-29
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• 2015

Demand for a low-cost, high-throughput, and high-resolution patterning method for fabricating devices continues to increase. The roll-to-roll (R2R) imprint lithography technique has received a great deal of attention as a means of fabricating next-generation devices. In this paper, we propose a fabrication method for polymeric planar lightwave circuit (PLC) devices that uses R2R imprint lithography. The proposed technique uses an elastomeric polydimethylsiloxane (PDMS) mold. A Si wafer with micro patterns is used as the Si master. The PDMS mold is then replicated from the Si master. By applying a precise web tension and at a given web speed, we fabricated a micro-patterned PLC device. The insertion losses were 4.0 dB for a $1{\times}2$ optical splitter. As such, the proposed method of fabricating a PLC device by the R2R process was shown to be an effective solution.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.427-427
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• 2016

Organic-inorganic hybrid perovskite have attracted significant attention as a new revolutionary light absorber for photovoltaic device due to its remarkable characteristics such as long charge diffusion lengths (100-1000nm), low recombination rate, and high extinction coefficient. Recently, power conversion efficiency of perovskite solar cell is above 20% that is approached to crystalline silicon solar cells. Planar heterojunction perovskite solar cells have simple device structure and can be fabricated low temperature process due to absence of mesoporous scaffold that should be annealed over 500 oC. However, in the planar structure, controlling perovskite film qualities such as crystallinity and coverage is important for high performances. Those controlling methods in one-step deposition have been reported such as adding additive, solvent-engineering, using anti-solvent, for pin-hole free perovskite layer to reduce shunting paths connecting between electron transport layer and hole transport layer. Here, we studied the effect of alkali metal halide to control the fabrication process of perovskite film. During the morphology determination step, alkali metal halides can affect film morphologies by intercalating with PbI2 layer and reducing $CH3NH3PbI3{\cdot}DMF$ intermediate phase resulting in needle shape morphology. As types of alkali metal ions, the diverse grain sizes of film were observed due to different crystallization rate depending on the size of alkali metal ions. The pin-hole free perovskite film was obtained with this method, and the resulting perovskite solar cells showed higher performance as > 10% of power conversion efficiency in large size perovskite solar cell as $5{\times}5cm$. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) are analyzed to prove the mechanism of perovskite film formation with alkali metal halides.