• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.122-128
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• 1997

In this study, the PVDF organic thin films were fabricated by thermal evaporation deposition which is one of the dry-processing methods. The distance from heat source to substrate was 5 cm. The substrate temperature was maintained at $30 ^{\circ}C$ during deposition. The working pressure was about $2.0\times10^{-5}$Torr and the temperature of heat source was increased at the rate of 6 to $8^{\circ}C$/min. At $270^{\circ}C$, the shutter was opened and the deposition of PVDF has stared. As the electrical field intensity increased, $\alpha$ peaks such $530\textrm{cm}^{-1},795\textrm{cm}^{-1},1182\textrm{cm}^{-1}$ decreased, and $\beta$ peaks such as $510\textrm{cm}^{-1},1273\textrm{cm}^{-1}$ increased. The intensity of $530\textrm{cm}^{-1}$ peak was stronger than that of $510\textrm{cm}^{-1}$ peak velow the 71.4 kV/cm, intensity of electrical field. This result showed the characteristic of film mainly due to $\alpha$-mode. According to these results, the molecular structure of PVDF thin film is transformed from $\alpha$-mode with TGT or TG'T to $\beta$-mode with planar zigzag structure TT, as increasing of intensity of electrical field.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.153-153
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• 2010

Recently, to develop GaN-based light-emitting diodes (LEDs) with better performances, various approaches have been suggested by many research groups. In particular, using the patterned sapphire substrate technique has shown the improvement in both internal quantum efficiency and light extraction properties of GaN-based LEDs. In this paper, we discuss the influences of the direction of the hexagonal-structure arrays of lens-shaped patterns (HSAPs) formed on sapphire substrates on the crystal, optical, and electrical properties of InGaN/GaN multi-quantum-well (MQW) LEDs. The basic direction of the HSAPs is normal (HSAPN) with respect to the primary flat zone of a c-plane sapphire substrate. Another HSAP tilted by 30o (HSAP30) from the HSAPN structure was used to investigate the effects of the pattern direction. The full width at half maximums (FWHMs) of the double-crystal x-ray diffraction (DCXRD) spectrum for the (0002) and (1-102) planes of the HSAPN are 320.4 and 381.6 arcsecs., respectively, which are relatively narrower compared to those of the HSP30. The photoluminescence intensity for the HSAPN structure was ~1.2 times stronger than that for the HSAP30. From the electroluminescence (EL) measurements, the intensity for both structures are almost similar. In addition, the effects of the area of the individual lens pattern consisting of the hexagonal-structure arrays are discussed using the concept of the planar area fraction (PAF) defined as the following equation; PAF = [1-(patterns area/total unit areas)] For the relatively small PAF region up to 0.494, the influences of the HSAP direction on the LED characteristics were significant. However, the direction effects of the HSAP became small with increasing the PAF.

• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.135-145
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• 2006

This paper presents the theory, design, fabrication and characterization of the novel low actuation voltage capacitive shunt RF-MEMS switch using a corrugated membrane with HRS MEMS packaging. Analytical analyses and experimental results have been carried out to derive algebraic expressions for the mechanical actuation mechanics of corrugated membrane for a low residual stress. It is shown that the residual stress of both types of corrugated and flat membranes can be modeled with the help of a mechanics theory. The residual stress in corrugated membranes is calculated using a geometrical model and is confirmed by finite element method(FEM) analysis and experimental results. The corrugated electrostatic actuated bridge is suspended over a concave structure of CPW, with sputtered nickel(Ni) as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon(HRS) substrate. The corrugated switch on concave structure requires lower actuation voltage than the flat switch on planar structure in various thickness bridges. The residual stress is very low by corrugating both ends of the bridge on concave structure. The residual stress of the bridge material and structure is critical to lower the actuation voltage. The Self-alignment HRS MEMS package of the RF-MEMS switch with a $15{\Omega}{\cdot}cm$ lightly-doped Si chip carrier also shows no parasitic leakage resonances and is verified as an effective packaging solution for the low cost and high performance coplanar MMICs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.9
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• pp.1633-1640
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• 2016

In this paper, we propose a open-ended rectangular microstirp patch antenna with fork-shaped feeding structure. This antenna extends the effective bandwidth by transforming single or multi resonant frequency and is designed planar monopole structure with microstrip line to satisfy the WLAN bands (2.4 - 2.484, 5.15 - 5.35, 5.25-5.825 GHz). The substrate is printed in 0.8 mm thickness on an FR-4 board. A commercial 3D simulation tool was used to analyze surface current and electromagnetic field distribution in order to analyze the operation mode and reconfiguration principle of antenna. According to the lengths of individual patches, simulated reflection loss was compared to obtain optimized values. When it was designed with the optimized values, it satisfied WLAN bands (2.380 - 2.710, 4.900 - 5.950 GHz), if the switch is off, and 2.4 WLAN band (2.380 - 2.710 GHz). From the fabricated and measured results, measured results of return loss, gain and radiation patterns characteristics displayed for operating bands.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.9 s.100
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• pp.949-956
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• 2005

In this paper, a new CPW-fed cross shape fractal antenna having a self-affinity is presented. This novel configuration, which has anisotropic scaling symmetry, makes smaller profile characteristic compared to the fractal antenna using a self-similarity. Increase of the iteration coefficient, which leads to decrease of the fundamental resonant frequency, shows a good impedance matching condition and multi-band characteristics due to new surface current paths. The radiation patterns are similar to those of monopole antennas. In the K3 stage of iteration, the proposed antenna shows a measured maximum gain 2.27 dBi at 940 MHz. A commercially available software based on the FDTD algorithm has been used to obtain the predicted results. In addition, an RT/Duroid 5880 substrate has been employed for the experimental results.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.713-719
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• 2000

In order to Prepare the$Ge_xSi_{1-x}/Si$(111) heterosructure by solid phase epitaxy (SPE), about 1000A of Au and about 1000A Ge were sequentially deposited on the Si(111) substrate. The resulting Ge/Au/Si(111) samples were isochronically annealed in the high vacuum condition. The behaviors of Au and Ge during thermal annealing and the structural Properties of $Ge_xSi_{1-x}$ films were characterized by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high resolution transmission electron microscopy (TEM). The a-Ge/Au/Si(111) structure was converted to the Au/GeSi/Si(111) structure. Defects such as stacking faults, point defects and dislocations were found at the GeXSil-X(111) interface, but the film was grown epitaxially with the matching face relationship of $Ge_xSi_{1-x}/$(111)/Si(111). Twin crystals were also found in the $Ge_xSi_{1-x}/$(111) matrix.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.135-135
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• 2003

The fast evolution in the fold of optical communication systems demands powerful optical information treatment. These functions can be performed by integrated optical systems. A key component of such systems is erbium doped waveguide amplifier(EDWA). The intra 4f radiative transition of Er at 1.5 $\mu\textrm{m}$ is particularly interesting because this wavelength is standard in optical telecommunications. The fabrication of waveguide amplifier for integrated optics using sol-gel process has received an increasing attention. Potential advantage of lower cost by less capital equipment and easy processing makes this process an attractive alternatives to conventional technologies like flame hydrolysis deposition, ion exchange and chemical vapor deposition, etc. In addition, sol-gel process has been found to be extremely suitable for the control of composition and refractive index related directly with optical properties. The main drawback of such an amplifier with respect to the EDWA is the need for a much higher Er3+ concentration to compensate for the smaller interaction length. However, the high doping of Er might be resulted in the non-radiative relaxation by clustering of Er ions End co-operative upconversion. In order to solve this problem, we investigate the possibility of avoiding short Er-Er distances by encapsulation of Er3+ ions in hosts such as organic-inorganic hybrid materials. For inorganic-organic hybrid sols, methacryloxypropyltrimethoxysilane (MPTS), zirconyl chloride octahydrate and erbium(III) chloride hexahydrate were used as starting materials, followed by conventional sol-gel process. It was observed by TEM that nano sols having core/shell toplology were formed, depending on the mole ratio of Zr/Er. The surface roughness for the coatings on Si substrate was investigated by AFM as a function of Zr/Er ratio. The local environment and vibrational Properties of Er3+ ions were studied using Near-IR, FT-IR, and UV/Vis spectroscopy. Nano hybrid coatings derived from polymer and Er doped encapsulation Eave the good luminescence at 1.55$\mu\textrm{m}$.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.5
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• pp.557-564
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• 2015

In this paper, the compact antenna for handsets is designed using FR-4 substrate for LTE(905-960 MHz), WCDMA(1922.8-2167.2 MHz), DCS(1710.2-1879.8 MHz), US-PCS(1850.2-1989.8 MHz), WLAN(2400-2483 MHz). The CPW line with many advantages and a spiral geometry for miniaturization is proposed. Widths of a spiral line are constant, and three stubs are added to broaden the bandwidth. Lengths and widths of three stubs are gradually changed. And proposed antenna is optimized for VSWR<3, designed, and fabricated. The dimension of this antenna is only $40{\times}30{\times}1mm3$ which is compact. It has been demonstrated by experiment that the compact planar antenna can be used as the mobile communication LTE antenna for 4G.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1135-1140
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• 2008

Bismuth-telluride based thin film materials are grown by Metal Organic Chemical Vapor Deposition(MOCVD). A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the sample was heated by heating block and the voltage output measured. As expected for a thermoelectric generator, the voltage decreases linearly, while the power output rises to a maximum. The highest estimated power of $1.3{\mu}W$ is obtained for the temperature difference of 45 K. we provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which may have nanostructure with high thermoelectric properties.

• Journal of Advanced Navigation Technology
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• v.12 no.2
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• pp.122-131
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• 2008

In this paper, an S-band oscillator of the low phase noise property using miniaturized microstrip hairpin shaped ring resonator has been designed and implemented. The TACONIC's RF-35 substrate has a dielectric constant ${\varepsilon}_r$=3.5 a thickness h=20mil a copper thickness t=17 um and loss tangent $tan{\delta}$=0.0025. The designed and implemented 2.45 GHz oscillator shows low phase performance of -100.5 dBc/Hz a 100kHz offset. Output power 20.9 dBm at center frequency 2.45 GHz and harmonic suppression -32 dBc. The circuit was implemented with hybrid technique. But can be fully compatible with the RFIC's, MIC and MMIC due to its entirely planar structure.