• Proceedings of the Korean Society of Precision Engineering Conference
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• 1995.10a
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• pp.1093-1097
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• 1995

A micro ion drag pump with planar electrodes on a glass substrate is fabricated and tested. the pump consisted of a 2- dimensional electrode pair array is driven by DC voltage using unipolar conduction. Ethy alcohol is pumped in both directions, and the flow rate and the pressure are measured, in channels of depth 100 .mu m or 200 .mu. m and width fixed at 3mm. It is found that the pump could be fabricated easily and at lower cost than the micro ion drag pumps previously investigated.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.71-76
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• 1994

Schottky diodes have been fabricated using the SDB wafer, and their characteristics have been investigated. For comparison, conventional planar and etched most structure were made on the same substrate. The ideality factor and barrier height of the fabricated devices are found to be 1.03 and 0.77eV, respectively. Breakdown volttge of the etched mesa Schottky diode has been increased to 180V. whereas it is 90V for the planar diode. Schottky diode with an etched mesa exhibits twice improvement in breaktown voltage.

• ETRI Journal
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• v.34 no.3
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• pp.454-457
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• 2012

A miniaturized planar digital video broadcasting terrestrial (DVB-T) antenna, which is composed of a patterned helical line, an open stub, and an impedance matching circuit on an FR4 (${\varepsilon}_r$=4.4) substrate for portable media player applications, is presented in this letter. The antenna has monopole-like, omni-directional radiation characteristics and a wide impedance bandwidth (VSWR<3) in the DVB-T band from 174 MHz to 230 MHz at the VHF band.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.39-46
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• 2017

This paper presents the fabrication of ceramic insulation layer on metallic heat spreading substrate, i.e. an insulated metal substrate, for planar type heater. Aluminum alloy substrate is preferred as a heat spreading panel due to its high thermal conductivity, machinability and the light weight for the planar type heater which is used at the thermal treatment process of semiconductor device and display component manufacturing. An insulating layer made of ceramic dielectric film that is stable at high temperature has to be coated on the metallic substrate to form a heating element circuit. Two technical issues are raised at the forming of ceramic insulation layer on the metallic substrate; one is delamination and crack between metal and ceramic interface due to their large differences in thermal expansion coefficient, and the other is electrical breakdown due to intrinsic weakness in dielectric or structural defects. In this work, to overcome those problem, selected metal oxide buffer layers were introduced between metal and ceramic layer for mechanical matching, enhancing the adhesion strength, and multi-coating method was applied to improve the film quality and the dielectric breakdown property.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.113-119
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• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.8 no.5
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• pp.51-56
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• 2008

In this paper, we propose a printed planar antenna suitable for mobile wireless communications. Since the printed antenna is easy to fabricate due to simplicity, low cost, and light weight, it is widely used in communications systems. The conventional patch antenna takes too much surface area to be applied to a mobile receiver. Although the size is reduced using the printed antenna, still reasonably wide bandwidth should be considered. To overcome the disadvantage of narrow bandwidth, the substrate should be physically thick and the dielectric constant should be small. In this work, we suggest a simple form of printed planar antenna and show the optimal input impedance depending on the antenna size and operating frequency. The performance evaluation is achieved analytically for a prototype antenna model.

• Bulletin of the Korean Chemical Society
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• v.32 no.spc8
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• pp.2941-2948
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• 2011

A nanogap formed by a metal nanoparticle and a flat metal substrate is one kind of "hot site" for surface-enhanced Raman scattering (SERS). The characteristics of a typical nanogap formed by a planar Au and either an Au and Ag nanoparticle have been well studied using 4-aminobenzenethiol (4-ABT) as a probe. 4-ABT is, however, an unusual molecule in the sense that its SERS spectral feature is dependent not only on the kinds of SERS substrates but also on the measurement conditions; thus further characterization is required using other adsorbate molecules such as 1,4-phenylenediisocyanide (1,4-PDI). In fact, no Raman signal was observable when 1,4-PDI was selfassembled on a flat Au substrate, but a distinct spectrum was obtained when 60 nm-sized Au or Ag nanoparticles were adsorbed on the pendent -NC groups of 1,4-PDI. This is definitely due to the electromagnetic coupling between the localized surface plasmon of Au or Ag nanoparticle with the surface plasmon polariton of the planar Au substrate, allowing an intense electric field to be induced in the gap between them. A higher Raman signal was observed when Ag nanoparticles were attached to 1,4-PDI, irrespective of the excitation wavelength, and especially the highest Raman signal was measured at the 632.8 nm excitation (with the enhancement factor on the order of ${\sim}10^3$), followed by the excitation at 568 and 514.5 nm, in agreement with the finite-difference timedomain calculation. From a separate potential-dependent SERS study, the voltage applied to the planar Au appeared to be transmitted without loss to the Au or Ag nanoparticles, and from the study of the effect of volatile organics, the voltage transmission from Au or Ag nanoparticles to the planar Au also appeared as equally probable to that from the planar Au to the Au or Ag nanoparticles in a nanogap electrode. The response of the Au-Ag nanogap to the external stimuli was, however, not the same as that of the Au-Au nanogap.

• ETRI Journal
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• v.40 no.3
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• pp.389-395
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• 2018

A novel class of planar metamaterial unit-cells consisting of a peace logo pattern is presented. A significant advantage of the proposed peace-logo planar metamaterial (PLPM) unit-cell over existing designs is its tunability, simplicity, and compatibility with microstrip structures. The theoretical analysis is founded on the famous transmission-line theory for the metamaterial concept. Then, the tunable dual-band two-sided PLPM (TSPLPM) unit-cell is designed by printing a similar PLPM pattern at the bottom of the substrate. The influence of the bottom PLPM pattern on the resonance frequencies of the unit-cell was analyzed by performing numerical simulations using CST Microwave Studio 2017 and HFSSv15 simulators. The results of the numerical simulations demonstrated that the proposed TSPLPM has the ability to control the resonance frequencies over 50 GHz-75 GHz for millimeter-wave applications.

• ETRI Journal
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• v.17 no.2
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• pp.1-10
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• 1995

We propose a novel planar optical interconnection scheme for 100 Gb/s optical packet address detection, which consists of waveguide grating couplers and a diffractive microlens integrated on a glass substrate 3-dimensionally. Length and duty cycle of the grating couplers have been determined on the bases of the ray-optic propagation-mode analysis in a slab waveguide and of the rigorous coupled-wave diffraction analysis for out-coupled radiation-modes. The 3-dimensionally integrated planar optics makes it possible to connect each address bit-signals of $TE_ 0-waveguide$ mode to the detector with a power uniformity of 6.4 % and a total coupling efficiency of 72.3 %.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.172-173
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• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.