• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1603-1605
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• 2002

TFT-LCD is widely used for flat panel display. The large-size TFT-LCD panel requires a high speed driving and various driving methods because of signal delay, which is responsible for the shading effects. In this work, the floating and double driving methods are applied to Pixel Design Array Simulation Tool(PDAST) and the pixel characteristics of TFT-LCD array is simulated. Also, we have implemented the semi-empirical TFT model to PDAST, which makes to obtain a more accurate pixel characteristics.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.452-454
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• 2000

In recent years, the Thin Film Transistor Liquid Crystal Display (TFT-LCD) is used in a variety of products as an interfacing device between human and them. Since TFT-LCDs have trend toward larger Panel sizes and higher spatial and/or gray-scale resolution, pixel charging characteristic is very important for the large panel size and high resolution TFT-LCD pixel characteristics. In this paper, both data line precharging method and line time extension (LiTEX) method is applied to Pixel Design Array Simulation Tool (PDAST) and the pixel charging characteristics of TFT-LCD array were simulated, which were compared with the results calculated by both PDAST In which the conventional device model of a-Si TFTs and gate step method is implemented.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.8 s.173
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• pp.7-16
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• 2005

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.6
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• pp.1297-1303
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• 2003

This paper propose an advanced circuit for fingerprint sensor signal processing. We increased the voltage between ridge and valley by modifying the parasitic capacitance eliminating circuit of sensor plate. The analog comparator was designed for comparing the sensor signal voltage with the reference signal voltage. We also propose an effective isolation strategy for removing noise and signal coupling, ESD of each sensor pixel. The 128${\times}$l44 pixel fingerprint sensor circuit was designed and simulated, and the layout was performed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.3
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• pp.531-536
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• 2009

In this paper, we propose $256{\times}256$ pixel array fingerprint sensor with an advanced circuits for detecting. The pixel level simple detection circuit converts from a small and variable sensing current to binary voltage out effectively. We minimizes an electrostatic discharge(ESD) influence by applying an effective isolation structure around the unit pixel. The sensor circuit blocks were designed and simulated in standard CMOS $0.35{\mu}m$ process. Full custom layout is performed in the unit sensor pixel and auto placement and routing is performed in the full chip.

• Nuclear Engineering and Technology
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• v.54 no.5
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• pp.1760-1768
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• 2022

When gamma-camera sensor modules, which are key components of radiation imagers, are derived from the coupling between scintillators and photosensors, the light collection efficiency is an important factor in determining the effectiveness with which the instrument can identify nuclides via their derived gamma-ray spectra. If the pixel area of the scintillator is larger than the pixel area of the photosensor, light loss and cross-talk between pixels of the photosensor can result in information loss, thereby degrading the precision of the energy estimate and the accuracy of the position-of-interaction determination derived from each active pixel in a coded-aperture based gamma camera. Here we present two methods to overcome the information loss associated with the loss of photons created by scintillation pixels that are coupled to an associated silicon photomultiplier pixel. Specifically, we detail the use of either: (1) light guides, or (2) scintillation pixel areas that match the area of the SiPM pixel. Compared with scintillator/SiPM couplings that have slightly mismatched intercept areas, the experimental results show that both methods substantially improve both the energy and spatial resolution by increasing light collection efficiency, but in terms of the image sensitivity and image quality, only slight improvements are accrued.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.38 no.1
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• pp.1-10
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• 2001

In order to generate the gray scale image by the binary state imaging devices such as a digital printer, the gray scale image needs to be converted into the binary image by the halftoning techniques. This paper presents a new error diffusion technique to achieve the homogeneous dot distributions on the binary images. In this paper,'the minimum pixel distance'from the current pixel under binarization to the nearest minor pixel is defined first. Also, the gray levels of the input image are converted into a new variable based on the principal distance for the error diffusion. In the proposed method, the difference in the principal distances is utilized for the error propagation, whereas the gray level difference due to the binarization is diffused to the neighboring pixels in the existing error diffusion techniques. The quantization is accomplished by comparing the updated principal distance with the minimum pixel distance. In order to calculate the minimum pixel distance, MPOA(Minor Pixel Offset Array) is employed to reduce the computational loads and memory resources.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.857-861
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• 2012

FPN (fixed-pattern-noise) mainly comes from the device or pattern mismatches in pixel and color filter, pixel photodiode leakage in CMOS image sensor. In this paper, optical stack module related pixel FPN was investigated and the classification of pixel FPN contribution with the individual optical module process was presented. The methodology and procedure would be helpful in reducing the greater pixel FPN and distinguishing the complex FPN sources with respect to various noise factors.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.55-60
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• 2007

This paper presents a compact double resolution scheme for the optical angle sensor based on 1-dimensional CMOS photodiode pixel array. All the pixels are divided into the even pixel and the odd pixel groups. The winner take all circuit is provided for each group. The proposed interpolation scheme increases the resolution by 2 from the winner addresses and winner values. The interpolation scheme can be implemented without any additional pixels or winner take all circuits and require only a comparator and a XOR gate. The proposed pixel array chip that has 336 photodiode pixels with $5.6{\mu}m$ pitch was fabricated with $0.35{\mu}m$ CMOS process and was assembled with a $50{\mu}m$ slit to form an angle sensor. The measured resolution is $0.1{\circ}$ with the proposed interpolation. The chip consumes 35mW and provides 8k samples per second.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.35-41
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• 2017

We propose a novel multi-photodiode array (MPDA) based retinal implant IC with on/off stimulation strategy for a visual prosthesis with improved spatial resolution. An active pixel sensor combined with a comparator enables generation of biphasic current pulses when light intensity meets a threshold condition. The threshold is tuned by changing the discharging time of the active pixel sensor for various light intensity environments. A prototype of the 30-channel retinal implant IC was fabricated with a unit pixel area of $0.021mm^2$, and the stimulus level up to $354{\mu}A$ was measured with the threshold ranging from 400 lx to 13120 lx.