• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1319-1322
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• 2007

Planar PIN photodiode is compatible with LTPS process, and its fabrication requires no additional manufacturing process. In this study we design the optimum dimension of PIN diodes with two nitride layers to improve the efficiency of PIN diodes. The PIN photo sensor shows very good sensitivity to ambient light illuminance.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.545-552
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• 2003

When a Si PIN diode is exposed to fast neutrons, it results in displacement damage to the Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed. Several PIN diode arrays with various thickness and cross-section area of the intrinsic layer(I layer) were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have a good linearity to neutron dose and show that the increase of thickness of I layer and the decrease of cross-section of PIN diodes improve the sensitivity. Newly developed PIN diodes with thicker I layer and various cross section, were retested and then showed the best neutron sensitivity at the condition that the I layer thickness was similar to a side length. On the basis of two test results, final discrete PIN diodes with a rectangular shape were manufactured and the characteristics as neutron detectors were analyzed through the neutron beam test using on-line electronic dosimetry system. Developed PIN diode shows a good linearity as dosimetry in the range of 0 to 1,000cGy(Tissue) and its neutron sensitivity is 13mV/cGy at constant current of 5mA, that is three times higher than that of commercially available neutron detectors. And the device shows little dependency on the orientation of the neutron beam and a considerable stability in annealing test for a long period.

• ETRI Journal
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• v.32 no.2
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• pp.312-318
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• 2010

A small reconfigurable patch antenna is proposed to achieve polarization diversity for digital multimedia broadcasting systems at 2.6 GHz. To obtain polarization diversity, a pair of on-slit PIN diodes is inserted in each diagonal of a cross-shaped patch. Thus, four PIN-diodes on these slits are utilized to change the connection of the slits and thus achieve polarization. Bias circuits for the diodes are allocated in the cutting corner of the cross-shaped patch to minimize the antenna size. The antenna produces left-hand circular polarization, right-hand circular polarization, or linear polarization, depending on the PIN-diode status. Analysis of circular polarization operation is explicated. Measurements show a gain of about 1.5 dB, a cross polarization of about -20 dB, and an axial ratio of about 2.5 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.1 s.104
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• pp.60-66
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• 2006

In this paper, a circular microstrip patch antenna for switchable polarization is presented. For the switchable polarization, pairs of tuning stubs and two PIN diodes are utilized. By independently setting the PIN diodes on or off, the antenna produces either linear polarization or circular polarization. From the results, the -10 dB impedance bandwidths of 57.0 MHz($2.4\%$) and 50.0 MHz($2.1\%$) when operated in the linear polarization, and the 3 dB axial ratio bandwidth of $1.3\%$ with minimum of 0.2 and 0.9 dB in the circular polarization have been observed.

• Journal of electromagnetic engineering and science
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• v.9 no.3
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• pp.159-163
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• 2009

This paper presents the design and implementation of Q-band MMIC phase shifters using InGaAs PIN diodes. The topology using a thin-film microstrip line(TFMS) has been proposed to achieve the desired phase-shift as well as good loss characteristics. Five single-bit MMIC phase shifters have been implemented by using a developed BCB(benzocyclobutene)-based multi-layer fabrication technology. The developed phase shifters have less than 3.4 dB of insertion loss and better than 11 dB of input and output return loss in the frequency range of 43 to 47 GHz. To the authors' knowledge, this is the first demonstration of high-performance InGaAs PIN diode-based MMIC phase shifters operating at Q-band frequencies.

• Journal of electromagnetic engineering and science
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• v.15 no.2
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• pp.115-119
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• 2015

This paper proposes a reconfigurable square-patch antenna with polarization diversity. The proposed antenna consists of a square radiating patch and a Y-shaped feed structure with two PIN diodes. The shape of the feed structure can be changed by adjusting the bias states of the two PIN diodes, which helps switch between two orthogonal linear polarizations. The polarization diversity characteristic is validated by the simulated current distribution and the measured radiation pattern.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2522-2525
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• 2001

Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made bymicro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.9
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• pp.834-843
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• 2016

In this paper, the design of a PIN diode S-band transfer-type SP4T including its driver circuit is presented. Each path of the SP4T is composed of the cascade connection of series-shunt PIN diodes to improve the isolation performance. The SP4T is implemented using chip type PIN diodes and a 20 mil AIN substrate fabricated using thin film technology. The driver circuit for the SP4T is designed using a multiplexer and four NMOS-PMOS push-pull pair. From on-wafer measurement, the fabriacted SP4T shows a maximum insertion loss of 1.1 dB and a minimum isolation of 41 dB. The time performance of the driver circuit is evaluated using the packaged PIN diodes with the identical PIN diode chip, and the transition time for on-off and off-on are below 100 nsec. For an input power level of 150 W, the measured insertion loss and isolation are close to those of the on-wafer measurement taking into consideration of the coaxial package mismatch and insertion loss.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.11
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• pp.1090-1099
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• 2004

In this paper a novel design of equilateral-triangular microstrip antenna using PIN diode fur switching the resonant frequency is presented and experimentally studied. The proposed antenna has changed the resonant frequency by length of spur-lines on the patch, and PIN diodes are utilized to switch the spur-line on and off. The shape of the spur-line is changed according to the on and off states of PIN diode and the equilateral triangular microstrip antenna has different resonant frequencies in accordance with them. The resonant frequency is 1.22 GHz with off states since the surface currents flow the periphery of T shape spur-lines, while the resonant frequency is 1.82 GHz with on states since the surface currents are little effect with the conventional equilateral triangular microstrip antenna. The radiation pattern of the proposed antenna has a good linear polarization with the cross polarization of -20 dB both with on and off states.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.4 s.107
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• pp.368-379
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• 2006

In this paper, the analytic design technique for a planar PIN diode limiter is presented rather than the conventional design heavily relying on the experiments. The novel analysis fur the PIN diode limiter shows the leakage is composed of two kinds of leakages and the relationship between the leakages and the PIN diode parameters. The designed limiter consists of 3 stages; the front two stages with two PM diodes and the final stage with Schottky diode pair. The fabricated limiter shows the insertion loss of 0.8 dB for the small input power, spike leakage of 12 Bm, flat leakage of 12 dBm for the 20 W RF power.