• 대한한방내과학회지
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• 제33권3호
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• pp.257-271
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• 2012

Objectives : The purpose of this study was to confirm that the pulse analyzer is useful for analyzing characteristics of variables of pulse waves in age categories, evaluating pulse waves of the metabolic syndrome group, compared with those of the non-metabolic syndrome group in Korean adults. Methods : The pulse wave variables were measured in Guan of all 1,056 subjects by the pulse analyzer, using a pen-type piezoresistive sensor. The physical measurement, blood test and survey were also performed by each subject. Results : In the age categories, height of pre-incisura (h2), height of tidal wave (h3), area of percussion wave (Aw), and width of percussion wave (w) increased in accordance with increase in age. While ratio of systolic period area (As) went up according to the increase of age, ratio of diastolic period area (Ad) went down. Radial augmentation index (R-AI), h2/h1, h3/h1, w/t and angle of percussion wave went up by aging, generally. Aw rate (Aw/At) also increased. Among the metabolic syndrome group, in the ages of 19 and 44, ratio of systolic period area (As) was higher and ratio of diastolic period area (Ad) was lower than in the non-metabolic group. w/t, Aw/At, and angle of percussion wave were higher than in the non-metabolic syndrome group. Among the metabolic syndrome group over the age of 60, height of pre-incisura (h2), height of tidal wave (h3), total area (At), area of percussion wave (Aw), radial augmentation index (R-AI), h2/h1 and h3/h1 were higher than in the non-metabolic syndrome group. Conclusions : The pulse analyzer is useful to analyze arterial stiffness in the age categories and in the metabolic syndrome group by some measures.

• 전기전자학회논문지
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• 제1권1호
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• pp.1-10
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• 1997

It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

• 드라이브 ㆍ 컨트롤
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• 제13권1호
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• pp.43-48
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• 2016

This paper presents a preliminary study on the pressure sensing characteristics of smart nano composites made of MWCNT (multi-walled carbon nanotube) to develop a novel pressure sensor. We fabricated the composite pressure sensor by using a solution casting process. Made of carbon smart nano composites, the sensor works by means of piezoresistivity under pressure. We built a signal processing system similar to a conventional strain gage system. The sensor voltage outputs during the experiment for the pressure sensor and the resistance changes of the MWCNT as well as the epoxy based on the smart nano composite under static pressure were fairly stable and showed quite consistent responses under lab level tests. We confirmed that the response time characteristics of MWCNT nano composites with epoxy were faster than the MWCNT/EPDM sensor under static loads.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1226-1228
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• 1994

Applications of poly-Si layers which are important as sensing and structural material of various sensors were reviewed in this research. A piezoresistive pressure sensor with piezoresistors has sensitivity of $6.93{\mu}$ V/(VmmHg) within 300mmHg. Temperature sensor was studied with measurement range of $-40{\sim}140^{\circ}C$ and $400{\sim}800^{\circ}C$ using boron-doped and undoped poly-Si resistors, respectively. Poly-Si layer was used to transduce volume change of polyimide to stress of silicon diaphragm for humidity sensor.

• 센서학회지
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• 제8권3호
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• pp.253-258
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• 1999

본 논문은 일기에 관한 대표적인 정보인 온도, 습도, 그리고 기압의 변화를 감지하여 일기를 예측하는 일기예보시스템을 개발함으로써, 가정에서 쉽게 일기에 대한 정보를 얻을 수 있도록 하는데 목적이 있다. 이를 위해 기상청으로부터 기상정보와 일기와의 관계를 분석하여, 차후 측정된 기상정보로부터 일기예보를 하는데 필요한 판단기준을 마련하였다. 또한, 자체적인 데이터 수집을 위해 반도체 압저항성을 이용한 압력센서와 온습도센서를 제작하고, 마이크로프로세서를 이용하여 시스템을 제작하였다.

• 동의생리병리학회지
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• 제19권6호
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• pp.1673-1675
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• 2005

The pulse diagnosis is an important and universal method in Oriental medicine. Nevertheless, because of characteristic that depends on subjective sense of Oriental medicine doctor (OMD), it is not recognized by objective basis. The Korean Institute of Oriental Medicine(KIOM) and Daeyo Medi. Co. Ltd. developed the 3-D Mac using arrey piezoresistive sensors and multi-axial robot. 133 healthy subjects participated in this study, 75 males and 58 females, between 20 and 70 years of age. All subjects were relaxed in a supine position on a comfortable chair for twenty minutes before the measurement was taken. The measured position is the radial artery of subject's left wrist and the position is called Chon, Kwan and Chuck in Oriental medicine. To detect floating and sinking pulse, we established coefficient of floating and sinking(CFS). CFS means relative position of maximum pulse pressure in PH curve. The lower CFS value means that the pulse has floating tendency. There was significant diffence between CFS and diagnosis of floating-sinking pulse by OMD(p=0.020). CFS value of over 40's group was significantly larger than those of 20's and 30's(p=0.000). There was no significant difference between male and female(p=0.061).

• 센서학회지
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• 제11권3호
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• pp.138-144
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• 2002

스테인레스 봉입형 압력센서를 제작하기 위하여 먼저 반도체 제조 및 식각 공정을 통하여 반도체 압력센서를 제작하였다 그리고 이를 glass molding된 스테인레스 housing에 올려놓고 $50\;{\mu}m$ 두께의 스테인레스 박판을 용접한 후 실리콘 오일을 채워 넣고 봉입하여 압력 범위 10 bar 센서를 완성하였다. 이와 같이 제작한 센서와 XTR105 발신기 전용 회로를 결합하여 $4{\sim}20\;mA$ 출력의 압력 발신기를 제작하고 그 특성을 조사하였다. 온도 보상 전 정확도는 ${\pm}5%$ FS이었으나 보상 후 정확도 ${\pm}1%$ FS로 개선되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 G
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• pp.2504-2508
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• 1998

In this paper, we propose the new detecting method for three dimensional piezoresistive silicon accelerometer. Furthermore the accelerometer is formed to have endurance for high temperature by perfect isolation of the piezoresistors using Silicon On Insulator(SOI) wafer. Sensor size are optimized with analytical formulae and extended with FEM simulation for the more detailed results. The accelerometer was fabricated by bulk micromachining techonology. We measured the temperature characteristics and the output characteristics, and the both characteristics were compared with the simulated results

• 감성과학
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• 제24권2호
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• pp.65-74
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• 2021

최근 ICT 산업의 기술혁신이 일어남에 따라 생체신호을 인식하고 이에 대해 대응을 하기 위한 웨어러블 센싱 장치에 대한 수요가 증가하고 있다. 이에 따라 본 연구에서는 단순한 함침과정을 통해 3차원 스페이서(3D spacer)직물을 단일벽 탄소나노튜브(SWCNT)분산용액에 함침공정을 진행해 단일층(monolayer) 압전 저항형 압력 센서(piezoresistive pressure sensor)를 개발하였다. 3D 스페이서 원단에 전기전도성을 부여하기 위해 시료를 SWCNT 분산용액에 함침공정을 진행한 후 건조하는 과정을 거쳤다. 함침된 시료의 전기적 특성을 파악하기 위해 UTM (Universal Testing Machine)과 멀티미터를 이용해서 압력의 변화에 따른 저항의 변화를 측정하였다. 또한 센서의 전기적 특성의 변화를 관찰하기 위해 분산용액의 농도, 함침횟수, 시료의 두께를 다르게 해서 시료의 센서로서의 성능을 평가했다. 그 결과 wt0.1%의 SWCNT 분산용액에 함침공정을 2번 진행한 시료가 센서로서 가장 뛰어난 성능을 나타냄을 알 수 있었다. 두께별로는 7mm 두께의 센서가 가장 높은 GF를 보이고 13mm 두께의 센서가 작동범위가 가장 넓음을 확인했다. 본 연구를 통해 3D spacer 원단으로 제작한 스마트 텍스타일 센서는 공정과정이 단순하면서도 센서로서 성능이 뛰어나다는 장점을 확인할 수 있었다.

• ETRI Journal
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• 제38권4호
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• pp.685-694
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• 2016

A surface micromachined piezoresistive pressure sensor with a novel internal substrate vacuum cavity was developed. The proposed internal substrate vacuum cavity is formed by selectively etching the silicon substrate under the sensing diaphragm. For the proposed cavity, a new fabrication process including a cavity side-wall formation, dry isotropic cavity etching, and cavity vacuum sealing was developed that is fully CMOS-compatible, low in cost, and reliable. The sensitivity of the fabricated pressure sensors is 2.80 mV/V/bar and 3.46 mV/V/bar for a rectangular and circular diaphragm, respectively, and the linearity is 0.39% and 0.16% for these two diaphragms. The temperature coefficient of the resistances of the polysilicon piezoresistor is 0.003% to 0.005% per degree of Celsius according to the sensor design. The temperature coefficient of the offset voltage at 1 atm is 0.0019 mV and 0.0051 mV per degree of Celsius for a rectangular and circular diaphragm, respectively. The measurement results demonstrate the feasibility of the proposed pressure sensor as a highly sensitive circuit-integrated pressure sensor.