• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.274-274
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• 2008

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1529-1531
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• 2003

Thick film mechanical sensors can be categorized into four main areas piezoresistive, piezoelectric, piezocapastive and mechanic tube. In this areas, the thick film strain gage is the earliest example of a primary sensing element based on the substrates. The latest thick film sensor is used various pastes that have been specifically developed for pressure sensor application. The screen printing technique has been used to fabricate the pressure sensors on alumina substrate($Al_2O_3$). Thick film capacitive of strain sensing characteristics are reported and dielectric paste based on (Ti+Ba) materials. The electric property of dielectric paste has been studied and exhibit good properly with good gage factor comparable to piezoresistive strain gage. New piezocapacitive strain sensor was designed and tested. The output of capacitive value was good characteristics.

• 센서학회지
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• 제32권6호
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• pp.470-474
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• 2023

In this study, a diaphragm-type pressure sensor was developed using multi-layer(four-layer) graphene produced at 1 nm thickness by thermally transferring single-layer graphene produced by chemical vapor deposition (CVD) to a 6" silicon wafer. By measuring the gauge factor, we investigated whether it was possible to produce a pressure sensor of consistent quality. As a result of the measurement, the pressure sensor using multilayer graphene showed linearity and had a gauge factor of about 17.5. The gauge factor of the multilayer graphene-based pressure sensor produced through this study is lower than that of doped silicon, but is more sensitive than a general metal sensor, showing that it can be sufficiently used as a commercialized sensor.

• 센서학회지
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• 제3권1호
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• pp.19-25
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• 1994

KOH와 같은 이방성 식각수용액를 사용하여 직각모양의 볼록한 가장자리를 식각할 때, 언더컷팅에 의해 가장 자리가 뭉개어지는 현상이 나타난다. 그래서 이 현상을 방지하기 위해 mass 패턴을 수정할 필요가 있어 보상법에 관한 실험을 하였다. 가속도센서 소자공간을 고려할 경우 정사각형의 보상구조로 mass를 보상하는 것이 적당하다는 결과를 얻었다. 이 결과를 기초로, SDB 웨이퍼를 이용하여 사각뿔 형태의 mass 보상된 실리콘 압저항형 가속도센서를 제조하였다.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2012년도 추계학술대회 논문집
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• pp.402-403
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• 2012

• 센서학회지
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• 제14권1호
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• pp.56-61
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• 2005

This paper present characteristics of chromium oxide thin-film as piezoresistive sensors, which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-Oxide atmosphere for high temperature applications. The chemical composition, physical and electrical properties and thermal stability ranges of the $CrO_{x}$ sensing elements have studied. $CrO_{x}$ thin films with a linear gauge factor(GF${\fallingdotseq}$15), high electrical resistivity (${\rho}$ = $340{\mu}{\Omega}cm$) and TCR<-55 ppm/$^{\circ}C$ have been obtained. These $CrO_{x}$ thin films may allow high temperature pressure sensor miniaturization to be achieved.

• 센서학회지
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• 제6권6호
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• pp.430-436
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• 1997

SDB웨이퍼를 사용한 압저항 형태의 50 G용 가속도 센서를 실리콘 마이크로머시닝을 사용하여 제조하였다. 이 형태의 가속도 센서는 진동하는 사각형의 매스와 4개의 빔으로 구성되어 있다. 이 구조는 RIE를 이용한 건식식각과 KOH 용액을 이용한 습식식각을 이용하여 제조되었다. 정사각형의 보상구조가 매스 가장자리의 언더에칭에 기인하는 변형을 보상하기 위해 사용되었다. 제조된 센서는 인가된 가속도에 대하여 선형적인 출력전압특성을 보여주고 감도는 0에서 10 G까지 약 $88{\mu}V/V{\cdot}g$이었다.

• 센서학회지
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• 제33권3호
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• pp.173-178
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• 2024

Development of pressure sensors for harsh environments with high pressure, humidity, and temperature is essential for many applications in the aerospace, marine, and automobile industries. However, existing materials such as polymers, adhesives, and semiconductors are not suitable for these conditions and require materials that are less sensitive to the external environment. This study proposed a pressure sensor that could withstand harsh environments and had high durability and precision. The sensor comprised a piezoresistor pattern and an insulating film directly formed on a stainless-steel membrane. To achieve the highest sensitivity, a pattern design method was proposed that considered the stress distribution in a circular membrane using finite element analysis. The manufacturing process involved depositing and etching a dielectric insulating film and metal piezoresistive material, resulting in a device with high linearity and slight hysteresis in the range of a maximum of 40 atm. The simplicity and effectiveness of this sensor render it a promising candidate for various applications in extreme environments.

• Korean Journal of Acupuncture
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• 제24권3호
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• pp.105-116
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• 2007

Objectives : This study was performed to determine whether a pulse analyzer using array piezoresistive sensor was useful to characterize the variables of pulse wave of hypertentive patients (HT) , compared with those of healthy subjects. Methods : One hundred twenty two subjects participated in this study. Sixty nine subjects had hypertension and fifty three subjects had no specific history or disease associated with hypertension. We used automatic pulse analyzer with array piezoreslstive sensor. Results : Calibrated in Chon, no specific differences was between HT group and the healthy group. Calibrated in Gwan. sum of pulse pressure (SPP) of HT group was higher than that of the healthy group. Calibrated in Cheek, mean of height of main peak (Mm) and height of main peak (h1) of HT group were higher than those of the healthy group. Conclusions : Pulse analyzer was useful to determine the risk degree or development possibility of hypertension.

• 대한전자공학회논문지SD
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• 제42권1호
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• pp.19-24
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• 2005

본 논문에서는 압저항 효과를 이용한 Si 압력센서 제작을 최적화하였다. Si 압저항형 압력센서의 제작공정에 있어서 압저항과 알루미늄 회로 패턴 이후에 Si 이방성 식각을 통하여 수율이 개선되었다. 압저항의 위치와 공정 파라메터는 각각 ANSYS와 SUPREME 시뮬레이터를 이용하여 결정하였다. Boron-depth 프로파일 측정으로부터 p-형 Si 압저항의 두께를 측정한 결과 SUPREME 시뮬레이션으로부터 얻은 결과와 잘 부합하였다. 다이아프램을 위한 Si 이방성 식각 공정은 암모늄 첨가제 AP(Ammonium persulfate)를 TMAH(Tetra-methyl ammonium hydroxide) 용액에 첨가함으로써 최적화되었다.