• The Journal of Internal Korean Medicine
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• v.33 no.3
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• pp.257-271
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• 2012

Objectives : The purpose of this study was to confirm that the pulse analyzer is useful for analyzing characteristics of variables of pulse waves in age categories, evaluating pulse waves of the metabolic syndrome group, compared with those of the non-metabolic syndrome group in Korean adults. Methods : The pulse wave variables were measured in Guan of all 1,056 subjects by the pulse analyzer, using a pen-type piezoresistive sensor. The physical measurement, blood test and survey were also performed by each subject. Results : In the age categories, height of pre-incisura (h2), height of tidal wave (h3), area of percussion wave (Aw), and width of percussion wave (w) increased in accordance with increase in age. While ratio of systolic period area (As) went up according to the increase of age, ratio of diastolic period area (Ad) went down. Radial augmentation index (R-AI), h2/h1, h3/h1, w/t and angle of percussion wave went up by aging, generally. Aw rate (Aw/At) also increased. Among the metabolic syndrome group, in the ages of 19 and 44, ratio of systolic period area (As) was higher and ratio of diastolic period area (Ad) was lower than in the non-metabolic group. w/t, Aw/At, and angle of percussion wave were higher than in the non-metabolic syndrome group. Among the metabolic syndrome group over the age of 60, height of pre-incisura (h2), height of tidal wave (h3), total area (At), area of percussion wave (Aw), radial augmentation index (R-AI), h2/h1 and h3/h1 were higher than in the non-metabolic syndrome group. Conclusions : The pulse analyzer is useful to analyze arterial stiffness in the age categories and in the metabolic syndrome group by some measures.

• Journal of IKEEE
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• v.1 no.1 s.1
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• pp.1-10
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• 1997

It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

• Journal of Drive and Control
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• v.13 no.1
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• pp.43-48
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• 2016

This paper presents a preliminary study on the pressure sensing characteristics of smart nano composites made of MWCNT (multi-walled carbon nanotube) to develop a novel pressure sensor. We fabricated the composite pressure sensor by using a solution casting process. Made of carbon smart nano composites, the sensor works by means of piezoresistivity under pressure. We built a signal processing system similar to a conventional strain gage system. The sensor voltage outputs during the experiment for the pressure sensor and the resistance changes of the MWCNT as well as the epoxy based on the smart nano composite under static pressure were fairly stable and showed quite consistent responses under lab level tests. We confirmed that the response time characteristics of MWCNT nano composites with epoxy were faster than the MWCNT/EPDM sensor under static loads.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1226-1228
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• 1994

Applications of poly-Si layers which are important as sensing and structural material of various sensors were reviewed in this research. A piezoresistive pressure sensor with piezoresistors has sensitivity of $6.93{\mu}$ V/(VmmHg) within 300mmHg. Temperature sensor was studied with measurement range of $-40{\sim}140^{\circ}C$ and $400{\sim}800^{\circ}C$ using boron-doped and undoped poly-Si resistors, respectively. Poly-Si layer was used to transduce volume change of polyimide to stress of silicon diaphragm for humidity sensor.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.253-258
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• 1999

This paper is written for the purpose of obtaining the information about the weather easily by the development of weather forecast system sensing temperature, humidity, and atmospheric pressure as key information. For this, data is obtained from the Weather Bureau, and analyzed in order to set a standard of weather forecast from the collected data. The pressure sensor and temperature-humidity sensor are fabricated using the piezoresistive effect of semiconductor, which are used to collect data. The weather forecast system is made using microprocessor.

• Journal of Physiology & Pathology in Korean Medicine
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• v.19 no.6
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• pp.1673-1675
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• 2005

The pulse diagnosis is an important and universal method in Oriental medicine. Nevertheless, because of characteristic that depends on subjective sense of Oriental medicine doctor (OMD), it is not recognized by objective basis. The Korean Institute of Oriental Medicine(KIOM) and Daeyo Medi. Co. Ltd. developed the 3-D Mac using arrey piezoresistive sensors and multi-axial robot. 133 healthy subjects participated in this study, 75 males and 58 females, between 20 and 70 years of age. All subjects were relaxed in a supine position on a comfortable chair for twenty minutes before the measurement was taken. The measured position is the radial artery of subject's left wrist and the position is called Chon, Kwan and Chuck in Oriental medicine. To detect floating and sinking pulse, we established coefficient of floating and sinking(CFS). CFS means relative position of maximum pulse pressure in PH curve. The lower CFS value means that the pulse has floating tendency. There was significant diffence between CFS and diagnosis of floating-sinking pulse by OMD(p=0.020). CFS value of over 40's group was significantly larger than those of 20's and 30's(p=0.000). There was no significant difference between male and female(p=0.061).

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.138-144
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• 2002

The silicon piezoresistive pressure sensor is made by semiconductor process to obtain stainless steel isolated type pressure sensor. The sensor is loaded on a stainless steel housing with glass molding, $50\;{\mu}m$ stainless steel thin film is welded, and the stainless steel housing encapsulated by silicone oil. The performance of fabricated the pressure sensor has 10 bar pressure range. The XTR105 of exclusive transmitter chip is used the pressure transmitter that output current is 4 - 20 mA. The accuracy is ${\pm}5%$ FS, however, the accuracy is ${\pm}1%$ FS when the sensor is compensated temperature.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2504-2508
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• 1998

In this paper, we propose the new detecting method for three dimensional piezoresistive silicon accelerometer. Furthermore the accelerometer is formed to have endurance for high temperature by perfect isolation of the piezoresistors using Silicon On Insulator(SOI) wafer. Sensor size are optimized with analytical formulae and extended with FEM simulation for the more detailed results. The accelerometer was fabricated by bulk micromachining techonology. We measured the temperature characteristics and the output characteristics, and the both characteristics were compared with the simulated results

• Science of Emotion and Sensibility
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• v.24 no.2
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• pp.65-74
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• 2021

With recent innovations in the ICT industry, the demand for wearable sensing devices to recognize and respond to biological signals has increased. In this study, a three-dimensional (3D) spacer fabric was embedded in a single-wall carbon nanotube (SWCNT) dispersive solution through a simple penetration process to develop a monolayer piezoresistive pressure sensor. To induce electrical conductivity in the 3D spacer fabric, samples were immersed in the SWCNT dispersive solution and dried. To determine the electrical properties of the impregnated specimen, a universal testing machine and multimeter were used to measure the resistance of the pressure change. Moreover, to examine the changes in the electrical properties of the sensor, its performance was evaluated by varying the concentration, number of penetrations, and thickness of the specimen. Samples that penetrated twice in the SWCNT distributed solution of 0.1 wt% showed the best performance as sensors. The 7-mm thick sensors showed the highest GF, and the 13-mm thick sensors showed the widest operating range. This study confirms the effectiveness of the simple process of fabricating smart textile sensors comprising 3D spacer fabrics and the excellent performance of the sensors.

• ETRI Journal
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• v.38 no.4
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• pp.685-694
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• 2016

A surface micromachined piezoresistive pressure sensor with a novel internal substrate vacuum cavity was developed. The proposed internal substrate vacuum cavity is formed by selectively etching the silicon substrate under the sensing diaphragm. For the proposed cavity, a new fabrication process including a cavity side-wall formation, dry isotropic cavity etching, and cavity vacuum sealing was developed that is fully CMOS-compatible, low in cost, and reliable. The sensitivity of the fabricated pressure sensors is 2.80 mV/V/bar and 3.46 mV/V/bar for a rectangular and circular diaphragm, respectively, and the linearity is 0.39% and 0.16% for these two diaphragms. The temperature coefficient of the resistances of the polysilicon piezoresistor is 0.003% to 0.005% per degree of Celsius according to the sensor design. The temperature coefficient of the offset voltage at 1 atm is 0.0019 mV and 0.0051 mV per degree of Celsius for a rectangular and circular diaphragm, respectively. The measurement results demonstrate the feasibility of the proposed pressure sensor as a highly sensitive circuit-integrated pressure sensor.