• Polymer(Korea)
• /
• v.35 no.2
• /
• pp.130-135
• /
• 2011

Along with the fast development of electronics, the demands of portable electronics and wireless sensors are growing rapidly. The need for self-powering materials capable of powering the electrical devices attached to them is increasing, The piezoelectric effect of polyvinylidene fluoride (PVDF) can be used for this purpose. PVDF has a special crystal structure consisting of a ${\beta}$-phase that can produce piezoelectricity. In this paper, multilayer PVDF films were fabricated to increase the ${\beta}$-phase content. A solution of 10% concentration N;N-dimethylacetamide (DMAc) in PVDF (PVDF/DMAc) was used to fabricate the films via spin coating technique with the following optimum process parameters: a spin rate of 850 rpm, spin time of 60 s, drying temperature of $60^{\circ}C$, and drying time of 30 min, Compared with single-layer PVDF films, the multilayer films exhibited higher ${\beta}$-phase content. The ${\beta}$-phase content of the films increased gradually with increasing number of layers until 4, Maximum ratio of ${\beta}$-phase content was 7.72.

• Korean Journal of Materials Research
• /
• v.12 no.3
• /
• pp.211-214
• /
• 2002

Properties of 52/48 PZT films with various thicknesses for piezoelectric micro-electro mechanical systems (MEMS) devices fabricated by multi-coating method on $Pt(3500{\AA})/Ti(400{\AA})/SiO_2(3000{\AA})/Si$(525$\mu\textrm{m}$) substrates were investigated. PZT films were deposited by spin-coating process at 3500 rpm for 30 sec, followed by pyrolysis at 45$0^{\circ}C$ for 10 min producing the thickness of about 120nm. These processes were repeated 4, 8, 12, 16 and 20 times in order to have various thicknesses, respectively. Finally, they were crystallized at $650^{\circ}C$ for 30 min. All thick PZT films showed dense and homogeneous surface microstructures. Thick PZT films showed crystalline structures of random orientations with increasing thickness. Dielectric constants of thick PZT films were increased with increasing film thickness and reached 800 at 100kHz for 2.3$\mu\textrm{m}$ thick PZT film. $P_r\; and\; E_c$ of 2.3$\mu\textrm{m}$ thick PZT films were about 20$\mu$C/$\textrm{cm}^2$ and 63kV/cm. Depth profile analysis by Auger Electron Spectroscopy (AES) of 4800 $\AA$ thick PZT film showed the formation of the perovskite phase on Pt layer by Pb diffusion behavior. It was considered that Pb-Pt intermediate layer promoted PZT (111) columnar structures.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.347-348
• /
• 2013

To obtain high conversion efficiency in InGaN-based solar cells, it is critical to grow high indium (In) composed InGaN layer for increasing sun light absorption wavelength rage. At present, most InGaN-based solar cells adopt InGaN/GaN multi-quantum-well (MQW) structure for high crystalline quality of InGaN with high In composition. In this study, we fabricated and compared the performances of two types of InGaN/GaN MQW solar cells which have the 15% (SC 15) and 25% (SC 25) of In composition at quantum well layer. Although both devices showed similar dark current density and leakage current, SC 15 showed better performance under AM 1.5G illumination as shown in Fig. 1. It is interesting to note that SC 25 showed severe current density decrease as increasing voltages. As a result, it lowered short circuit current density and fill factor of the device. However, SC 15 showed steady current density and over 75 % of fill factor. To investigate these differencesmore clearly, we analyzed their photoluminescence (PL) spectra under various applied voltages as shown in Fig. 2. At the same time, photocurrent, which was generated by PL excitation, was also measured as shown in Fig. 3. Further, we investigated the relationship between piezoelectric field and performance of InGaN based solar cell varying indium composition.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.4
• /
• pp.41-54
• /
• 2002

In this study, we have analyzed the effects of the membrane layer and the bragg reflector layers on the resonance characteristics through comparing the characteristics of the membrane type FBAR (Film Bulk Acoustic Wave Resonator) and the one type bragg reflector layers with those of the ideal FBAR with top and bottom electrode contacting air by using equivalent circuit technique. It is assumed that ZnO is used for piezoelectric film, $SiO_2$ are used for membrane layer and low acoustic impedance layer, W are used for the high acoustic reflector layer and Al is used for the electrode. Each layer is considered to have a acoustic propagation loss. ABCD parameters are picked out and input impedance is calculated by converting 1-port equivalent circuit to simplified equivalent circuit that ABCD parameters are picked out possible. From the variation of resonance frequency due to the change of thickness of electrode layers, reflector layers and membrane layer it is confirmed that membrane layer and the reflector layer just under the electrode have the greatest effect on the variation of resonance frequency. From the variation of resonance properties, K and electrical Q with the number of layers, K is not much affected by the number of layers but electrical Q increases with the number of layers when the number of layers is less than seven. The electrical Q is saturated when the number of layers is large than six. The electrical Q is dependent of mechanical Q of reflector layers and membrane layer. Both ladder filter and SCF (Stacked Crystal Filters) show higher insertion loss and out-of-band rejection with the increase of the number of resonators. The insertion loss decreases with the increase of the number of reflector layers but the bandwidth is not much affected by the number of reflector layers. Ladder Filter and SCF with membrane layer show the spurious response due to spurious resonance properties. Ladder filter shows better skirt-selectivity characteristics in bandwidth but SCF shows better characteristics in insertion loss.

• Journal of Mechanical Science and Technology
• /
• v.20 no.1
• /
• pp.76-84
• /
• 2006

Arrayed ultrasonic sensors based on the piezoelectric thin film (lead-zirconate-titanate: Pb($Zr_{0.52}Ti_{0.48})O_{3}$) having composite membrane structure are fabricated. Different thermal and elastic characteristics of each layer generate the residual stress during the high temperature deposition processes, accomplished diaphragm is consequently bowing. We present the membrane deflection effects originated from the residual stress on the resonant frequencies of the sensor chips. The resonant frequencies ($f_r$) measured of each sensor structures are located in the range of $87.6{\sim}111\;kHz$, these are larger $30{\sim}40\;kHz$ than the resultant frequencies of FEM. The primary factors of $f_r$ deviations from the ideal FEM results are the membrane deflections, and the influence of stiffness variations are not so large on that. Membrane deflections have the effect of total thickness increase which sensitively change the $f_r$ to the positive direction. Stress generations of the membrane are also numerically predicted for considering the effect of stiffness variations on the $f_r$.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.40 no.3
• /
• pp.10-17
• /
• 2003

In this paper, genetic algorithm (GA)-based Thin Film Bulk Acoustic Resonator (FBAR) RF filter design technique is proposed. Since the BVD(Butterworth-Van Dyke) lumped element model is valid only around the resonance, FBAR filter design technique based on BVD circuit has an approximate error. Instead of using BVD model, optimizing filter design method utilizes an analytical electrical impedance equation of FBAR. The geometry of FBAR such as thickness of the piezoelectric layer and area which significantly affect the filter response is optimized by GA. US-PCS Rx Bandpass filter obtained by the proposed technique shows a better response comparing with the typical and BVD-based filter.

• The Journal of the Acoustical Society of Korea
• /
• v.23 no.1
• /
• pp.1-7
• /
• 2004

We developed SH-SAW sensors to detect protein molecules in liquid solutions applying a particular antibody thin film on the delay line of transverse SAW devices. The antibody investigated was human-immune-globulin G (HigG) to hold the antigens (anti-HigG) in the protein solution. We fabricated the sensor generating 100 MHz with the piezoelectric single crystal LiTaO₃. We measured the frequency change of the sensor by adding the anti-body concentration on SAM (self assembled monolayer) deposited on the Au layer. The sensor showed stable response to the mass loading effects of the anti-HigG molecules with the sensitivity up to 10.8 ng/ml/Hz at noise level 400 Hz below.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1545_1546
• /
• 2009

This paper reports a novel wireless love-wave biosensor on $41^{\circ}$ YX $LiNbO_3$ piezoelectric substrate and $SiO_2$ guiding layer for Immunoglobulin G (IgG) detection by protein binding. Different from the traditional biosensors based on surface acoustic wave (SAW) oscillator structured by delay line/resonators, a 440MHz reflective delay line consists of SPUDTs and three reflectors placed on $41^{\circ}$ YX $LiNbO_3$ in a row was fabricated as the sensor element. Good linearity, reproducibility, and high sensitivity were observed in the IgG concentration range 1~65nM. Unique advantages as high sensitivity, passive and simple measurement system are present over currently available other biosensors.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.5
• /
• pp.915-920
• /
• 2007

AIN-based film bulk acoustic resonator (FBAR) devices which adopt a membrane-type configuration such as Mo/AIN/bottom-metal/Si are fabricated by employing a novel process. The proposed resonator structure does not require any supporting layer above the substrate, which leads to the reduction in energy loss of the resonators. For all the FBAR devices, the frequency response characteristics are measured and the device parameters, such as return loss and input impedance, are extracted from the frequency responses, and analyzed in terms of the various metals such as Al. Cu, Mo, W used in the bottom-electrode. The mass-loading effect caused by the used bottom-electrode metals is found to be the main reason for the difference revealed in the measured characteristics of the fabricated FBAH devices. The results obtained in this study also show that the degree of match in lattice constant and thermal expansion coefficient hetween piezoelectric layers and electrode metals is crucial to determine the device performance of FEAR.

• International Journal of Aeronautical and Space Sciences
• /
• v.12 no.1
• /
• pp.69-77
• /
• 2011

A peristaltic micropump with lightweight piezo-composite actuator (LIPCA) membrane valves is presented. The micropump contained three cylinder chambers that were connected by microchannels and two active membrane valves. A circular miniature LIPCA was developed and manufactured to be used as actuating diaphragms. The LIPCA diaphragm acted as an active membrane valve that alternate between open and closed positions at the inlet and outlet in order to produce high pumping pressure. In this LIPCA, a lead zirconium titanate ceramic with a thickness of 0.1 mm was used as an active layer. The results confirmed that the actuator produced a large out-of-plane deflection. During the design process, a coupled field analysis was conducted in order to predict the actuating behavior of the LIPCA diaphragm; the behavior of the actuator was investigated from both a theoretical and experimental perspective. The active membrane valve concept was introduced as a means for increasing pumping pressure, and microelectromechanical system techniques were used to fabricate the peristaltic micropump. The pumping performance was analyzed experimentally in terms of the flow rate, pumping pressure and power consumption.