• Title/Summary/Keyword: Piezoelectric layer

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Transparent and Flexible All-Organic Multi-Functional Sensing Devices Based on Field-effect Transistor Structure

  • Trung, Tran Quang;Tien, Nguyen Thanh;Seol, Young-Gug;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.491-491
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    • 2011
  • Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

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Pressure Sensing Properties of AlN Thin Films Sputtered at Room Temperature

  • Seok, Hye-Won;Kim, Sei-Ki;Kang, Yang-Koo;Lee, Youn-Jin;Hong, Yeon-Woo;Ju, Byeong-Kwon
    • Journal of Sensor Science and Technology
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    • v.23 no.2
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    • pp.94-98
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    • 2014
  • Aluminum nitride (AlN) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 25~75% $N_2$ /Ar. The characterization of film properties were performed using surface profiler, X-ray diffraction, X-ray photoelectron spectroscopy(XPS), and pressure-voltage measurement system. The deposition rates of AlN films were decreased with increasing the $N_2$ concentration owing to lower mass of nitrogen ions than Ar. The as-deposited AlN films showed crystalline phase, and with increasing the $N_2$ concentration, the peak of AlN(100) plane and the crystallinity became weak. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. But in the case of 50% $N_2$ /Ar condition, the peak of (002) plane, which is determinant in pressure sensing properties, appeared. XPS depth profiling of AlN/TiN/SUS430 revealed Al/N ratio was close to stoichiometric value (45:47) when deposited under 50% $N_2/Ar$ atmosphere at room temperature. The output signal voltage of AlN sensor showed a linear behavior between 26~85 mV, and the pressure-sensing sensitivity was calculated as 7 mV/MPa.

Basic Studies for the Development of the $NO_2$ Gas Sensor Using Functional Organic Ultrathin Film (기능성 유기 초박막을 이용한 $NO_2$ 가스센서 개발을 위한 기초 연구)

  • Sohn, B.C.;Rim, B.O.;Kim, Y.I.;Sohn, T.W.;Shin, D.M.;Ju, J.B.;Chung, G.Y.;Kim, Y.K.;Kang, W.H.;Lee, B.H.
    • Journal of the Korean Applied Science and Technology
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    • v.12 no.1
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    • pp.125-131
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    • 1995
  • Ultra thin films of Tetra-3-hexadecylsulphamoylcopperphthalocyanine(HDSM-CuPc) were formed on various substrates by Langmuir-Blodgett method, where HDSM-CuPc was synthesized by attaching long-chain alkylamine(hexa-decylamine) to CuPc. The reaction product was identified with FT-IR, UV-visible absorption spectroscopies, elemental analysis and thin layer chromatography. The formation of Ultrathin Langmuir-Blodgett(LB) films of HDSM-CuPc was confirmed by FT-IR and UV-visible spectroscopies. A quartz piezoelectric crystal coated with LB films of HDSM-CuPc was examined as a gas sensor for $N0_2$ gas. HDSM-CuPc LB films were transferred to a quartz crystal microbalance(QCM) in the form of Z-type multilayers. Response characteristics of film-coated QCM to $NO_2$ gas concentrations over a range of $100{\sim}600ppm$ have been tested with a thickness of $5{\sim}20$ layers of HDSM-CuPc. Changes in frequency by adsorption of $NO_2$ were increased With the number of LB layers and $NO_2$ concentration, but the response time was slow.

The Effects of $SiN_x$ Dielectric Thin Films on SAW Properties of the High Frequency SAW Filter for Cellular Communication System ($SiN_x$유전 보호막이 이동통신용 고주파 SAW필터의 특성에 미치는 영향)

  • Lee, Yong-Ui;Lee, Jae-Bin;Kim, Hyeong-Jun;Kim, Yeong-Jin;Yang, Hyeong-Guk;Park, Jong-Cheol
    • Korean Journal of Materials Research
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    • v.5 no.6
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    • pp.650-656
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    • 1995
  • High frequency SAW filters for cellular communications were fabricated by metallizing 36$^{\circ}$Y-X LiTaO$_3$piezoelectric substrate with IIDT type electrodes. It was found that the center frequency of the filter was lowered than as designed. In order to overcome such a drawback and enable a fine tuning of its center frequency, dielectric SiN$_{x}$ thin films were deposited on LiTaO$_3$substrate by PECVD as passivation layer and then frequency responses were also characterized. As a result, the center frequency of the filter could be shifted to a higher frequency with increasing the thickness of SiN$_{x}$ film, because SAW velocity increased with increasing the ratio of the thickness of dielectric thin film to wavelength. The insertion loss of the filter, however, became larger with increasing the thickness of SiN$_{x}$ film.

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Characteristics Analysis and Fabrication of an Ultrasonic Motor for Auto Focusing and Optical zooming (Auto Focusing 및 Optical zooming에 사용될 초음파모터의 특성분석)

  • Yun, Yong-Jin;Kwon, Oh-Duk;Lee, Jong-Sub;Kang, Sung-Hwa;Lim, Ki-Joe
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.330-331
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    • 2005
  • 본 논문에서는 카메라폰용 광학중(Optical zooming) 과 자동초점조절장치 (Auto Focusing, AF)에 쓰일 초음파모터를 제작하였다. 초음파모터의제작 및 시뮬레이션은 유한요소해석 프로그램인 ATILA 5.2.1 (Magsoft co.)를 사용하여 디자인설계에 따른 구동특성을 고찰하였고 제작된 초음파모터는 한쪽 면이 없는 사작형의 탄성체를 제작하였으며 탄성체의 양쪽 다리에 각각 압전체를 부착하였다. 또한 압전세라믹의 조성은 $0.9Pb(Zr_{0.51}Ti_{0.49})O_3-0.1Pb(Mn_{1/3}Nb_{1/3}Sb_{1/3})O_3$의 조성으로 설계하였고 시편의 제조는 7-layer로 적층하였다. 제작된 압전세라믹의 치수는 6*2*0.35$mm^3$(길이*폭*두께)로 제작하였다 또한 탄성체의 외형치수는 10*10*2$mm^3$로 제작하였으며 두께를 각각 0.3[mm], 0.5[mm], 0.8[mm]으로 변화시키며 제작하였다. 두께가 0.8[mm]인경우 공진주파수는 60.5[kHz]를 나타내었으며 초음파모터의 압전세라믹에 인가전압이 증가함에 따라 회전속도와 모터에 흐르는 전류는 증가하였다. 인가전압이 40[Vpp] 일 때 회전속도는 206[rpm] 이며 소비전력은 0.3[W]로 제작된 시편은 카메라폰용 광학중 및 자동초점조절장치시스템 분야에 응용이 가능하다.

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Fabrication and Characteristics of Micro PZT Cantilever Energy Harvester Using MEMS Technologies (MEMS 공정을 이용한 마이크로 PZT 외팔보 에너지 수확소자의 제작 및 특성)

  • Kim, Moon-Keun;Hwang, Beom-Seok;Jeong, Jae-Hwa;Min, Nam-Ki;Kwon, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.6
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    • pp.515-518
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    • 2011
  • In this work, we designed and fabricated a multilayer thin film Pb(Zr,Ti)$O_3$ cantilever with a Si proof mass for low frequency vibration energy harvesting applications. A mathematical model of a mu lti-layer composite beam was derived and applied in a parametric analysis of the piezoelectric cantilever. Finally, the dimensions of the cantilever were determined for the resonant frequency of the cantilever. W e fabricated a device with beam dimensions of about 4,930 ${\mu}M$ ${\times}$ 450 ${\mu}M$ ${\times}$ 12 ${\mu}M$, and an integrated Si proof mass with dimensions of about 1,410 ${\mu}M$ ${\times}$ 450 ${\mu}M$ ${\times}$ 450 ${\mu}M$. The resonant frequency, maximum peak voltage, and highest average power of the cantilever device were 84.5 Hz, 88 mV, and 0.166 ${\mu}Wat$ 1.0 g and 23.7 ${\Omega}$, respectively. The dimensions of the cantilever were determined for the resonance frequency of the cantilever.

Study on Ultrasonic Transducer for Non-Destructive Evaluation of Highly Attenuative Material Using PMN-PT Single Crystal (PMN-PT 압전 단결정을 이용한 고감쇠 재료 비파괴 평가용 초음파 탐촉자 연구)

  • Kim, Ki-Bok;Ahn, Bong-Young;Kim, Young-Gil;Park, Sang-Ki;Ha, Jeong-Soo
    • Journal of the Korean Society for Nondestructive Testing
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    • v.27 no.4
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    • pp.313-320
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    • 2007
  • Recently, a new class of single-crystal piezoelectric materials such as lead metanibobate doped with lead titanate (PMN-PT) has been synthesized and were found to further enhance the electro-mechanical coupling factor compared to piezo-ceramic materials. This paper describes fabrication and evaluation of PMN-PT single crystal ultrasonic transducers for contact measurement of stainless steel that is one of the highly attenuative materials. The design conditions for ultrasonic transducer such as front matching layer between test materials and piezo-material and backing materials were investigated based on the simulation results by KLM model. The PMN-PT single crystal ultrasonic transducers with centre frequencies at 1 and 2.25 MHz were fabricated and their performances were evaluated.

The Design of Broadband Ultrasonic Transducers for Fish Species Identification - Dual Resonance Design of a Ultrasonic Transducer Using a Single Acoustic Matching Layer - (어종식별을 위한 광대역 초음파 변환기의 설계 II - 단일음향정합층을 이용한 이중공진형 변환기의 설계 -)

  • 이대재
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.34 no.1
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    • pp.74-84
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    • 1998
  • A doubly resonant ultrasonic transducer has been designed as an attempt to increase the bandwidth of underwater transducers. The dual resonance conditions were accomplished by attaching a single acoustic matching layer on the front face of a Tonpilz transducer consisted of an aluminum head, a piezoelectric ring, a brass tail and a prestress bolt. A modified Mason's model was used for the performance analysis and the design of transducers, and the constructed transducers were tested experimentally and numerically by changing the impedances and thicknesses of the head, tail and matching layers in the water tank. Two distinct resonance peaks in the transmitting voltage response(TVR) of a developed transducer were observed at 34.3 and 40.4 kHz, respectively, with the difference frequency of 6.1kHz and the center frequency of 37.2kHz. The values of TVR at these frequencies were 136.5 dB re $1\;\muPa/V$ at 34.3 kHz and 136.8 dB re $1\;\muPa/V$ at 40.4 kHz, respectively. Reasonable agreement between the experimental results and the numerical results was achieved. From this result, it is expected that the generation of the distinct resonances at any two desired frequencies can be achieved through the proper choice of the matching layer to provide the impedance transformation between the transducer and the medium.

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Development of Battery-free SAW Integrated Microsensor for Real Time Simultaneous Measurement of Humidity and $CO_2$ component (습도와 $CO_2$ 농도의 실시간 동시감지를 위한 무전원 SAW 기반 집적 센서 개발)

  • Lim, Chun-Bae;Lee, Kee-Keun;Wang, Wen;Yang, Sang-Sik
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.1
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    • pp.13-19
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    • 2009
  • A 440MHz wireless and passive surface acoustic wave (SAW) based chemical sensor was developed on a $41^{\circ}YX\;LiNbO_3$ piezoelectric substrate for simultaneous measurement of $CO_2$ gas and relative humidity (RH) using a reflective delay line pattern as the sensor element. The reflective delay line is composed of an interdigital transducer (IDT) and several shorted grating reflectors. A Teflon AF 2400 and a hydrophilic $SiO_2$ layer were used as $CO_2$ and water vapor sensitive films. The coupling of mode (COM) modeling was conducted to determine optimal device parameters prior to fabrication. According to simulation results, the device was fabricated and then wirelessly measured using the network analyzer. The measured reflective coefficient $S_{11}$ in the time domain showed high signal/noise (S/N) ratio, small signal attenuation, and few spurious peaks. In the $CO_2$ and humidity testing, high sensitivity ($2^{\circ}/ppm$ for $CO_2$ detection and $7.45^{\circ}/%$RH for humidity sensing), good linearity and repeatability were observed in the $CO_2$ concentration ranges of $75{\sim}375ppm$ and humidity levels of $20{\sim}80%$RH. Temperature and humidity compensations were also investigated during the sensitivity evaluation process.

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다층 PNN-PZT/Ag 복합체의 동시 소성을 위한 압전세라믹스의 저온소결 및 압전특성 평가

  • Lee, Myeong-U;Son, Yong-Ho;Kim, Seong-Jin;Yun, Man-Sun;Ryu, Seong-Rim;Gwon, Sun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.295-295
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    • 2007
  • 기계적 에너지를 전기적 에너지로 변화하는 에너지 변환소자인 압전 세라믹스는 액츄에이터, 변압기, 초음파모터, 초음파 소자 및 각종 센서로 응용되고 있으며, 그 응용분야는 크게 증가하고 있다. 최근 이러한 에너지 변화 소자는 앞으로 도래하는 ubiquitous, 무선 모바일 시대의 휴대용 전자제품, robotics, 항공우주, 자동차, 의료, 건축, MEMS 분야 등의 대체 에너지원으로 응용하기 위한 연구가 진행되고 있다. 특히 인간의 동작 등과 같은 일상적인 동작으로 필요한 전력을 얻을 수 있고, 세라믹 소자를 이용하기 때문에 전자노이즈가 발생되지 않을 뿐 아니라 반영구적으로 사용할 수가 있어서, 기존 이차전지, 연료전지를 대체 또는 보완 할 수 있는 방안도 검토되고 있다. PZT계 세라믹스는 높은 유전상수와 압전특성으로 전자세라믹스분야에서 가장 널리 사용되어지고 있지만 $1200^{\circ}C$이상의 높은 소결온도 때문에 $1000^{\circ}C$ 부근에서 급격히 휘발되는 PbO로 인한 환경오염과 기본조성의 변화로 인한 압전 특성의 저하가 문제시되고 있다. 또한, 적층 세라믹스의 제작 시 구조적 특성상 내부 전극이 도포된 상태에서 동시 소결이 필요한데, 융점이 낮은 Ag전극 대신 값비싼 Pd나 Pt가 다량 함유된 Ag/Pd, Ag/Pt 전극이 사용되고 있어 경제적인 문제가 발생하게 된다. 따라서 순수 Ag 전극을 사용하거나, Ag의 비율이 높은 내부 전극을 사용하기 위해서는 $950^{\circ}C$ 이하에서 소결되는 압전 세라믹스를 개발 하는 것이 필요하다. 따라서 본 연구에서는 압전특성이 우수한 $(Pb_{1-x}Cd_x)\;[(Ni_{1/3}/Nb_{2/3})_{0.25}Zr_{0.35}Ti_{0.4}]O_3$계의 조성을 설계하여, 소결온도를 낮추기 위해서 2단계 하소법을 이용하였다. 분말을 ball milling을 통해 24시간 동안 혼합하였다. 혼합된 분말은 $800^{\circ}C$에서 2시간 동안 하소하였다. 하소한 분말을 72시간 동안 ball milling 하여 최종 분말을 얻었다. 최종 분말에 PVB를 첨가하여 ${\Phi}21$ disk 형태로 성형한 후, $800{\sim}950^{\circ}C$ 소결을 하였다. 최종 분말 및 소결된 시편을 XRD분석을 통하여 상을 확인하였고, SEM을 이용하여 미세조직을 관찰하였다. 전기적 특성을 확인하기 위하여 두께 1mm로 연마한 시편에 Ag 전극을 도포하여 열처리한 후, 분극 처리하였다. 압전특성은 $d_{33}$ 미터로 측정하였고, impedance analyzer를 이용하여 주파수 및 impedance 특성을 측정하였다. 그 결과 $900^{\circ}C$에서 우수한 압전 특성 및 전기적 특성을 확보 할 수 있었다.

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