• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.3365-3370
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• 2007

We developed micro power generation system using piezoelectric materials. In our system, the ambient vibrating energy is converting to electric energy by deflection of piezoelectric beams. The system consists of energy generating parts, converting enhancement parts, electric regulation and charging parts, and interface with small-energy-consuming mobile devices. The geometry of piezoelectric beams, the source of vibrating energy, and the electric load of target application determine the characteristics of generating electric power, such as impedance, voltage, current and power density. Therefore, we made a model for analysis of generating power with given information such as piezoelectric materials, geometry, vibration type, and mass. With this model, we can calculate capacitance of piezoelectric beams, generating voltage, current, and power. To obtain maximum energy transfer efficiency, we approached this study in the view of material, electrical, and mechanical engineering

• 한국분말재료학회지
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• 제26권2호
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• pp.119-125
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• 2019

Piezoelectric energy harvesting technology is attracting attention, as it can be used to convert more accessible mechanical energy resources to periodic electricity. Recent developments in the field of piezoelectric energy harvesters (PEHs) are associated with nanocomposites made from inorganic piezoelectric nanomaterials and organic elastomers. Here, we used the $BaTiO_3$ nanoparticles and piezoelectric poly(vinylidene fluoride) (PVDF) polymeric matrix to fabricate the nanocomposites-based PEH to improve the output performance of PEHs. The piezoelectric nanocomposite is produced by dispersing the inorganic piezo-ceramic nanoparticles inside an organic piezo-polymer and subsequently spin-coat it onto a metal plate. The fabricated organic-inorganic piezoelectric nanocomposite-based PEH harvested the output voltage of ~1.5 V and current signals of ~90 nA under repeated mechanical pushings: these values are compared to those of energy devices made from non-piezoelectric polydimethylsiloxane (PDMS) elastomers and supported by a multiphysics simulation software.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.403-406
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• 2000

The piezoelectric properties and the doping effect of N $b_2$ $O_{5}$ and Mn $O_2$for 0.95PbZ $r_{x}$ $Ti_{x}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$ compositions have been investigated. In the composition of 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$the Values Of $k_{p}$ find and $\varepsilon$$_{33}$ $^{T}$ are maximized, but $Q_{m}$ Was minimized ( $k_{p}$ =0.51, $Q_{m}$ =1750). The grain size was suppressed and the uniformity of grain was improved with doping concentration of N $b_2$ $O_{5}$ for 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.005Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$sample. The values of $k_{p}$ increased and the values of $Q_{m}$ slightly decreased when 0.5 wt% of N $b_2$ $O_{5}$ is doped. And the values of $k_{p}$ was the same formation of the N $b_2$ $O_{5}$ dopant when 0.5 wt% of M $n_2$ $O_{5}$ is doped. But the values of $Q_{m}$ was deeply decreased when 0.5 wt% of Mn $O_2$is doped. As a experiment results under high electric field driving, this piezoelectric ceramics are very stable. Conclusively, piezoelectric ceramic compsiton investigated at this paper is suitable for application to high power piezoelectric devices.. devices..ices.. devices..

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권4호
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• pp.293-298
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• 2006

Thermopiezoelectric method, using poly silicon heater and a piezoelectric sensor, was proposed for writing and reading in a probe based data storage system. Resistively heated tip writes data bits while scanning over a polymer media and piezoelectric sensor reads data bits from the self-generated charges induced by the deflection of the cantilever. 34${\times}$34 array of thermopiezoelectric nitride cantilevers were fabricated by a single step wafer level transfer method. We analyzed the noise level of the charge amplifier and measured the noise signal. With the sensor and the charge amplifier 20mn of deflection could be detected at a frequency of 10KHz. Reading signal was obtained from the cantilever array and the sensitivity was calculated.

• Journal of electromagnetic engineering and science
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• 제7권1호
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• pp.12-16
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• 2007

A UHF band wireless identification system based on passive surface acoustic wave(SAW) devices is presented in this paper. SAW ID tags were fabricated on Y-Z $LiNbO_3$ piezoelectric substrate with a good electro-mechanical coupling property. To reduce degradation of the antenna performance associated with the piezoelectric materials, an efficient design of the SAW RFID antenna is introduced. By measuring the parameters of the SAW ID tag, the performance of the antenna was tested by experimentation.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1039-1044
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• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2395-2397
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• 2005

A low voltage operated piezoelectric RF MEMS in-line switch has been realized by using silicon bulk micromachining technologies for advanced mobile/wireless applications. The developed RF MEMS in-line switches were comprised of four piezoelectric cantilever actuators with an Au contact metal electrode and a suspended Au signal transmission line above the silicon substrate. The measured operation dc bias voltages were ranged from 2.5 to 4 volts by varying the thickness and the length of the piezoelectric cantilever actuators, which are well agreed with the simulation results. The measured isolation and insertion loss of the switch with series configuration were -43dB and -0.21dB (including parasitic effects of the silicon substrate) at a frequency of 2GHz and an actuation voltage of 3 volts.

• 한국전기전자재료학회논문지
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• 제28권9호
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• pp.565-570
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• 2015

The haptic actuator needs to downsize in the mobile devices continuatively. In this work, the hinge lever mechanism was used in order to prevent lowering the vibration performances of the downsized actuator. The vibration performances of actuator with and without hinge-lever mechanism were simulated by the finite element method analysis. It is concluded that the hinge-lever mechanism may be a proper measure to prevent lowering the vibration performances in the downsized piezoelectric actuator.

• 한국세라믹학회지
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• 제36권6호
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• pp.640-645
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• 1999

Recently rapid progress of electronic and telecommunication technology requires the development of new piezoelectric materials and cellular communication is more and more used in various fields. Langasite(La3Ga5SiO14) is suitable for new piezoelectric properties. Langastie can be applied as communication devices due to intermediate piezoelectric properties which are similar to those of quartz and LiTaO3 in its acoustic characteristics. So in this study Langastie(La3Ga5SiO14) single crystal with 47 mm in diameter and 25mm in length were sucessfully grown by using self-designed Czochralski system. In addition optimum growth conditions for the piezoelectric applications throughout estimation of crystal quality and frequency characteristics were investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.591-596
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• 2006

Lead zirconate titanate(PZT) thin films have been attracting worldwide interests in exploring their potential properties [1-3] or the origins [4-6] of their excellent dielectic, ferroelectric and piezoelectric properties near the morphotropic phase boundary (MPB). PZT thin films are expected to apply to the memory devices, micro electro mechanical systems (MEMS), and display because of their superior ferroelectric, pyroelectric, piezoelectric and electron emission properties. In this study, high- performance piezoelectric PZT thin films for actuated mirror array and optical scanner were developed by controlling the several factors, such as molecular-designed precursor, seeding layer and the residual stress in films, by a chemical solution deposition (CSD).