Stress Induced Gigantic Piezoelectricity of PZT thin films for Actuated Mirror Array

Lead zirconate titanate(PZT) thin films have been attracting worldwide interests in exploring their potential properties [1-3] or the origins [4-6] of their excellent dielectic, ferroelectric and piezoelectric properties near the morphotropic phase boundary (MPB). PZT thin films are expected to apply to the memory devices, micro electro mechanical systems (MEMS), and display because of their superior ferroelectric, pyroelectric, piezoelectric and electron emission properties. In this study, high- performance piezoelectric PZT thin films for actuated mirror array and optical scanner were developed by controlling the several factors, such as molecular-designed precursor, seeding layer and the residual stress in films, by a chemical solution deposition (CSD).