• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.78-81
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• 2013

$0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ (hereafter, No excess NKN) ceramics and $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ with excess $(Na_{0.5}K_{0.5})NbO_3$ (hereafter, Excess NKN) were fabricated by the conventional solid state sintering method, and their phase transition properties and dielectric properties were investigated. The crystalline structure of No excess NKN ceramics and Excess NKN ceramics were shown characteristics of polymorphic phase transition (hereafter, PPT), especially shift from the orthorhombic to tetragonal phase by increasing sintering temperature range from $1,100^{\circ}C$ to $1,200^{\circ}C$. Also, the temperature coefficient of capacitance (hereafter, TCC) of No excess NKN ceramics and Excess NKN ceramics from $-40^{\circ}C$ to $100^{\circ}C$ was measured to evaluate temperature stability for applications in cold regions. The TCC of No excess NKN and Excess NKN ceramics showed positive TCC characteristics at a temperature range from $-40^{\circ}C$ to $100^{\circ}C$. Especially, Excess NKN showed a smaller TCC gradient than those of Excess NKN ceramics in range from $-40^{\circ}C$ to $100^{\circ}C$. Therefore, NKN piezoelectric ceramics combined with temperature compensated capacitor having negative temperature characteristics is desired for usage in cold regions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• Smart Structures and Systems
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• 제29권2호
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• pp.301-309
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• 2022

Protective coatings are most widely used anticorrosive structures for steel structures. The corrosion under the coating damages the host material, but this damage is completely hidden. Therefore, a field-applicable under-coating-corrosion visualization method has been desired for a long time. Laser ultrasonic technology has been studied in various fields as an in situ nondestructive inspection method. In this study, a comparative analysis was carried out between a guided-wave ultrasonic propagation imager (UPI) and pulse-echo UPI, which have the potential to be used in the field of under-coating-corrosion management. Both guided-wave UPI and pulse-echo UPI were able to successfully visualize the corrosion. Regarding the field application, the guided-wave UPI performing Q-switch laser scanning and piezoelectric sensing by magnetic attachment exhibited advantages owing to the larger distance and incident angle in the laser measurement than those of the pulse-echo UPI. Regarding the corrosion visualization methods, the combination of adjacent wave subtraction and variable time window amplitude mapping (VTWAM) provided acceptable results for the guided-wave UPI, while VTWAM was sufficient for the pule-echo UPI. In addition, the capability of multiple sensing in a single channel of the guided-wave UPI could improve the field applicability as well as the relatively smaller size of the system. Thus, we propose a guided-wave UPI as a tool for under-coating-corrosion management.

• 한국전기전자재료학회논문지
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• 제37권4호
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• pp.382-393
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• 2024

유체 디스펜싱(fluid dispensing) 방식인 Microplotter 시스템은 압전 소자를 통한 초음파 펌핑(pumpin)을 기반으로 유체를 분사한다. 이 기법은 넓은 범위의 점도를 가진 다양한 물질들이 마이크로 사이즈로 프린팅 되는 것을 가능하게 한다. 본 논문에서는 디스펜서 프린팅 기술에 대해 소개하고 장비를 이용한 다양한 공정을 이해 및 응용에 목적을 두고 있다. 또한, 분사 강도, 분사 시 팁의 높이, 분사 속도와 같은 매개변수들을 조절하여 장비의 최적화 방법에 대해 설명하고자 한다. 금속 나노 입자, 탄소나노튜브, DNA, 단백질 등 광범위한 유체와 호환된다는 Microplotter의 장점을 이용함으로써 인쇄전자, 생명공학, 화학공학 등 다양한 분야에서 활용될 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.115-116
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• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.

• 한국음향학회지
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• 제39권6호
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• pp.568-575
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• 2020

초음파는 다양한 산업 분야에서 널리 사용이 되고 있다. 그 중에 도전적인 분야로 전자부품의 냉각이 있다. 초음파 냉각 기술은 작동 유체로, 기존의 지구온난화를 유발하는 프레온 가스 대신에 Ar(아르곤), N₂(질소) 등의 기체로 대체가 가능하다. 또한 움직이는 부품이 없어 높은 내구성을 가질 수 있다. 그러므로 이러한 환경 문제와 내구성 관점에서 초음파 냉각 장치의 개발이 필요하다. 본 논문에서는 설계와 제작 공정에 대하여 설명하고 있다. 이 시스템을 설계할 때, 냉각기 시제품을 이용하여 유효성 테스트를 수행하였다. 이 결과를 바탕으로, ANSYS 프로그램을 사용한 유한요소해석을 수행하였다. 반공진 주파수는 34.8 kHz로 예측이 되었으며, 이는 실험치인 34.6 kHz과 0.6 %의 오차로 잘 일치하였다. 또한 초음파 웨이브가이드의 반공진 주파수는 39.4 kHz로 예측이 되었고, 역시 실험치인 39.8 kHz과 1.0 %의 오차로 잘 일치함을 알 수 있었다. 이러한 결과를 바탕으로 볼 때, 개발된 초음파 웨이브가이드는 마이크로칩의 냉각에 활용 될 수 있을 것으로 보인다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• 한국광학회지
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• 제10권3호
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• pp.195-200
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• 1999

가열인장(heating and pulling)방법을 이용하여 개구부 직경이 약 100nm 이하인 광섬유 탐침을 제작하였으며, 이를 이용하여 일정광량 방식의 광자주사현미경을 제작하였다. 광섬유 탐침을 물체에 미세하게 접근시켜서 물체면을 주사하기 위하여 원통형 PZT(piezoelectric transducer)를 x-y-z의 3부분으로 나누어 z축의 미세접근 및 1.43$\mu\textrm{m}$ $\times$ 1.76$\mu\textrm{m}$의 면적을 x-y축으로 주사할 수 있는 3차원 PZT 주사기를 제작하였다. 그리고 광섬유 탐침에서 검출되는 에바네슨트라의 광량이 항상 일정하도록 전자적인 되먹임 회로에 의한 광섬유 탐침이 1$\lambda$ ($\lambda$ 는 입사파장임) 이하의 근접장 영역에서 물체로부터의 높이가 일정하도록 하였다. 그리고 이렇게 제작된 일정광량 모드의 광자주사 현미경을 이용하여 정상파 형태의 에바네슨트파를 측정하였다.

• 한국전기전자재료학회논문지
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• 제35권4호
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• pp.333-341
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• 2022

자기전기복합체(magnetoelectric, ME compositie)는 자왜재료와 압전재료의 결합현상을 이용하는 재료로서 지난 20여 년간 이론적, 실험적으로 많은 연구가 진행되어 왔다. 자기전기복합체의 출력특성은 구성하는 소재, 계면층, 복합체의 형상, 자기장하 진동모드 등의 많은 구성요소의 최적화를 통하여 급속히 향상되고 있다. 하지만 자기전기복합체의 자기전기 결합 특성 평가는 대부분의 연구들에서 구체적인 방법을 제시하지 않아 어떻게 측정한 것인지가 불명확한 경우가 많다. 본 논문에서는 자기전기복합체의 비공진, 공진상황에서 자기전기 전압계수를 어떻게 측정할 수 있는지에 대한 자세한 방법을 소개한다. 평가를 위한 샘플로서 대칭적인 구조를 가지는 Gelfenol/PMN-PZT/Gelfenol 자기전기복합체를 제조하였다. 압전 재료로는 이방성의 (011) 32 모드의 PMN-PZT 압전 단결정과 자왜재료로는 Galfenol 합금을 사용하여 에폭시로 접착하였다. 컴퓨터 인터페이스로 자동화된 자기전기 전압특성 측정 시스템의 구성을 우선 설명하고, 자기전기 결합특성의 측정 방법을 단계별로 설명한다. 본 튜토리얼 논문에서는 자기전기결합 특성과 특성평가방법을 이해하고자 하는 연구자들에게 도움이 될 수 있는 평가방법의 원리와 절차를 제공하고자 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.114-114
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• 2009

ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved. $Mg_xZn_{1-x}O$ and $Cd_xZn_{1-x}O$ is ones of most promising alloys for this application because the alloys of ZnO with MgO and CdO provide a wide range of band-gap engineering spanning from 2.4 to 7.8 eV. In this study, we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios. The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). With the relatively low Mg/Zn flux ratios, a typical striated anisotropic surface morphology which was generally observed from the nonpolar (11-20) ZnO film on r-plane sapphire substrates. By increasing the Mg/Zn flux ratio, however, additional islands were appeared on the surface and finally the surface morphology was entirely changed, which was generally observed for the (0001) polar ZnO films by losing the striated morphology. Investigations by X-ray $\Theta-2{\Theta}$ diffraction revealed that (0002) and (10-11) ZnO planes are appeared in $Mg_xZn_{1-x}O$ films by increasing the Mg/Zn flux ratio. Further detailed investigation by transmission electron microscopy (TEM) and photoluminescence (PL) will be discussed.