• Title/Summary/Keyword: PiN diode

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The Fabrication of Packaged 4H-SiC 2kV power PiN diode and Its Electrical Characterization (탄화규소 (4H-SiC) 기반 패키지 된 2kV PiN 파워 다이오드 제작과 전기적 특성 분석)

  • Song, Jae-Yeol;Kang, In-Ho;Bahng, Wook;Joo, Sung-Jae;Kim, Sang-Cheol;Kim, Nam-Kyun;Lee, Yong-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.67-68
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    • 2008
  • In this study we have developed a packaged silicon carbide power diode with blocking voltage of 2kV. PiN diodes with 7 field limiting rings (FLRs) as an edge termination were fabricated on a 4H-SiC wafer with $30{\mu}m$-thick n-epilayer with donor concentration of $1.6\times10^{15}cm^{-3}$. From packaged PiN diode testing, we obtained reverse blocking voltage of 2kV, forward voltage drop of 4.35V at 100A/$cm^2$, on-resistance of $6.6m{\Omega}cm^2$, and about 8 nanosec reverse recovery time. These properties give a potential for the power system application.

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Practical SPICE Model for IGBT and PiN Diode Based on Finite Differential Method

  • Cao, Han;Ning, Puqi;Wen, Xuhui;Yuan, Tianshu
    • Journal of Power Electronics
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    • v.19 no.6
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    • pp.1591-1600
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    • 2019
  • In this paper, a practical SPICE model for an IGBT and a PiN diode is proposed based on the Finite Differential Method (FDM). Other than the conventional Fourier model and the Hefner model, the excess carrier distribution can be accurately solved by a fast FDM in the SPICE simulation tool. In order to improve the accuracy of the SPICE model, the Taguchi method is adopted to calibrate the extracted parameters. This paper presents a numerical modelling approach of an IGBT and a PIN diode, which are also verified by SPICE simulations and experiments.

Deep Level Trap Analysis of 4H-SiC PiN and SBD Diode (4H-SiC PiN과 SBD 다이오드 Deep Level Trap 비교 분석)

  • Shin, Myeong-Cheol;Byun, Dong-Wook;Lee, Geon-Hee;Shin, Hoon-Kyu;Lee, Nam-Suk;Kim, Seong Jun;Koo, Sang-Mo
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.2
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    • pp.123-126
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    • 2022
  • We investigated deep levels in n-type 4H-SiC epitaxy layer of the Positive-Intrinsic-Negative diode and Schottky barrier diodes by using deep level transient spectroscopy. Despite the excellent performance of 4H-SiC, research on various deep level defects still requires a lot of research to improve device performance. In Positive-Intrinsic-Negative diode, two defects of 196K and 628K are observed more than Schottky barrier diode. This is related to the action of impurity atoms infiltrating or occupying the 4H-SiC lattice in the ion implantation process. The I-V characteristics of the Positive-Intrinsic-Negative diode shows about ~100 times lower the leakage current level than Schottky barrier diode due to the grid structures in Positive-Intrinsic-Negative. As a result of comparing the capacitance of devices diode and Schottky barrier diode devices, it can be seen that the capacitance value lowered if it exists the P implantation regions from C-V characteristics.

Monochromatic Amber Light Emitting Diode with YAG and CaAlSiN3 Phosphor in Glass for Automotive Applications

  • Lee, Jeong Woo;Cha, Jae Min;Kim, Jinmo;Lee, Hee Chul;Yoon, Chang-Bun
    • Journal of the Korean Ceramic Society
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    • v.56 no.1
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    • pp.71-76
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    • 2019
  • Monochromatic amber phosphor in glasses (PiGs) for automotive LED applications were fabricated with $YAG:Ce^{3+}$, $CaAlSiN_3:Eu^{2+}$ phosphors and Pb-free silicate glass. After synthesis and thickness-thinning process, PiGs were mounted on high-power blue LED to make monochromatic amber LEDs. PiGs were simple mixtures of 566 nm yellow YAG, 615 nm red $CaAlSiN_3:Eu^{2+}$ phosphor and transparent glass frit. The powders were uniaxially pressed and treated again through CIP (cold isostatic pressing) at 200 MPa for 20 min to increase packing density. After conventional thermal treatment at $550^{\circ}C$ for 30 min, PiGs were applied by using GPS (gas pressure sintering) to obtain a fully dense PiG plate. As the phosphor content increased, the density of the sintered body decreased and PiGs containing 30 wt% phosphor had full sintered density. Changes in photoluminescence spectra and color coordination were investigated by varying the ratio of $YAG/CaAlSiN_3$ and the thickness of the plates. Considering the optical spectrum and color coordinates, PiG plates with $240{\mu}m$ thickness showed a color purity of 98% and a wavelength of about 605 nm. Plates exhibit suitable optical characteristics as amber light-converting material for automotive LED applications.

The Role of a Wiring Model in Switching Cell Transients: the PiN Diode Turn-off Case

  • Jedidi, Atef;Garrab, Hatem;Morel, Herve;Besbes, Kamel
    • Journal of Power Electronics
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    • v.17 no.2
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    • pp.561-569
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    • 2017
  • Power converter design requires simulation accuracy. In addition to the requirement of accurate models of power semiconductor devices, this paper highlights the role of considering a very good description of the converter circuit layout for an accurate simulation of its electrical behavior. This paper considers a simple experimental circuit including one switching cell where a MOSFET transistor controls the diode under test. The turn-off transients of the diode are captured, over which the circuit wiring has a major influence. This paper investigates the necessity for accurate modeling of the experimental test circuit wiring and the MOSFET transistor. It shows that a simple wiring inductance as the circuit wiring representation is insufficient. An adequate model and identification of the model parameters are then discussed. Results are validated through experimental and simulation results.

Development of Red CaAlSiN3:Eu2+ Phosphor in Glass Ceramic Composite for Automobile LED with High Temperature Stability (고온 안정성이 우수한 자동차 LED용 Red CaAlSiN3:Eu2+ 형광체/Glass 세라믹 복합체 개발)

  • Yoon, Chang-Bun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.5
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    • pp.324-329
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    • 2018
  • Red phosphor in glasses (PiGs) for automotive light-emitting diode (LED) applications were fabricated with 620-nm $CaAlSiN_3:Eu^{2+}$ phosphor and Pb-free silicate glass. PiGs were synthesized and mounted on high-power blue LED to make a monochromatic red LED. PiGs were simple mixtures of red phosphor and transparent glass powder. After being fabricated with uniaxial press and CIP at 300 MPa for 20 min, the green bodies were thermally treated at $550^{\circ}C$ for 30 min to produce high dense PiGs. As the phosphor content increased, the density of the sintered body decreased and PiGs containing 30% phosphor had a full sintered density. Changes in photoluminescence spectra and color coordination were studied by varying the thickness of plates that were mounted after optical polishing. As a result of the optical spectrum and color coordinates, PiG plate with $210{\mu}m$ thickness showed a color purity of 99.7%. In order to evaluate the thermal stability, the thermal quenching characteristics were measured at temperatures of $30{\sim}150^{\circ}C$. The results showed that the red PIG plates were 30% more thermally stable compared to the AlGaInP red chip.

Temperature-Dependent Characteristics of SBD and PiN Diodes in 4H-SiC (온도에 따른 4H-SiC에 기반한 SBD, PiN 특성 비교)

  • Seo, Ji-Ho;Cho, Seulki;Lee, Young-Jae;An, Jae-In;Min, Seong-Ji;Lee, Daeseok;Koo, Sang-Mo;Oh, Jong-Min
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.6
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    • pp.362-366
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    • 2018
  • Silicon carbide is widely used in power semiconductor devices owing to its high energy gap. In particular, Schottky barrier diode (SBD) and PiN diodes fabricated on 4H-SiC wafers are being applied to various fields such as power devices. The characteristics of SBD and PiN diodes can be extracted from C-V and I-V characteristics. The measured Schottky barrier height (SBH) was 1.23 eV in the temperature range of 298~473 K, and the average ideal factor is 1.17. The results show that the device with the Schottky contact is characterized by the theory of thermal emission. As the temperature increases, the parameters are changed and the Vth is shifted to lower voltages.

Technical Trends in Vertical GaN Power Devices for Electric Vehicle Application (전기차 응용을 위한 수직형 GaN 전력반도체 기술 동향)

  • H.S. Lee;S.B. Bae
    • Electronics and Telecommunications Trends
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    • v.38 no.1
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    • pp.36-45
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    • 2023
  • The increasing demand for ultra-high efficiency of compact power conversion systems for electric vehicle applications has brought GaN power semiconductors to the fore due to their low conduction losses and fast switching speed. In particular, the development of materials and core device processes contributed to remarkable results regarding the publication of vertical GaN power devices with high breakdown voltage. This paper reviews recent advances on GaN material technology and vertical GaN power device technology. The GaN material technology covers the latest technological trends and GaN epitaxial growth technology, while the vertical GaN power device technology examines diodes, Trench FETs, JFETs, and FinFETs and reviews the vertical GaN PiN diode technology developed by ETRI.

Analysis of Electrical Characteristics due to Deep Level Defects in 4H-SiC PiN Diodes (4H-SiC PiN 다이오드의 깊은 준위 결함에 따른 전기적 특성 분석)

  • Tae-Hee Lee;Se-Rim Park;Ye-Jin Kim;Seung-Hyun Park;Il Ryong Kim;Min Kyu Kim;Byeong Cheol Lim;Sang-Mo Koo
    • Korean Journal of Materials Research
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    • v.34 no.2
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    • pp.111-115
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    • 2024
  • Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

Electrical Characteristics and Deep Level Traps of 4H-SiC MPS Diodes with Different Barrier Heights (전위 장벽에 따른 4H-SiC MPS 소자의 전기적 특성과 깊은 준위 결함)

  • Byun, Dong-Wook;Lee, Hyung-Jin;Lee, Hee-Jae;Lee, Geon-Hee;Shin, Myeong-Cheol;Koo, Sang-Mo
    • Journal of IKEEE
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    • v.26 no.2
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    • pp.306-312
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    • 2022
  • We investigated electrical properties and deep level traps in 4H-SiC merged PiN Schottky (MPS) diodes with different barrier heights by different PN ratios and metallization annealing temperatures. The barrier heights of MPS diodes were obtained in IV and CV characteristics. The leakage current increased with the lowering barrier height, resulting in 10 times larger current. Additionally, the deep level traps (Z1/2 and RD1/2) were revealed by deep level transient spectroscopy (DLTS) measurement in four MPS diodes. Based on DLTS results, the trap energy levels were found to be shallow level by 22~28% with lower barrier height It could confirm the dependence of the defect level and concentration determined by DLTS on the Schottky barrier height and may lead to incorrect results regarding deep level trap parameters with small barrier heights.