• Title/Summary/Keyword: PiN

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Identification of N-terminal amino acids of ApPDE4 involved in targeting to plasma membrane and cellular morphological change by expression of N-terminal peptide (원형질막 타기팅에 필요한 ApPDE4의 N-말단의 아미노산 서열 분석 및 발현에 의한 형태적 변화)

  • Kim, Kun-Hyung;Jun, Yong-Woo;Lee, Jin-A;Jang, Deok-Jin
    • Analytical Science and Technology
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    • v.26 no.1
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    • pp.106-112
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    • 2013
  • PDE plays an important role in cAMP-mediated cellular signaling within the cells. The proper targeting of each PDE is mediated by unique N-terminal of each PDE isoform. It has been recently reported that supershort-, short- and long-forms of PDE4 in Aplysia were cloned in Aplysia. Long-form of ApPDE4 was localized at plasma membrane and presynaptic terminal in Aplysia sensory neurons. However, it remains elusive which part of ApPDE4 is minimal region for the proper targeting and what are the effects on the cell functions. Here, we identified that N-terminal 13 amino acids of ApPDE4 long-form is minimal regions for the plasma membrane targeting. In addition, overexpression of ApPDE4(N20)-mRFP could induce morphological changes in HEK293T cells. Interestingly, mRFP-$PLC{\delta}1$(PH), which selectively binds to PI4,$5P_2$, could induce morphological changes in similar with that by ApPDE4(N20)-mRFP. These results suggested that binding of ApPDE4(N20) to lipids including PI4,$5P_2$ might be responsible for targeting of ApPDE4 to plasma membrane and morphological changes in HEK293T cells.

Synthesis and Structural Characterization of Main Group 15 Organometallics R3M and R(Ph)2P(=N-Ar)(M = P, Sb, Bi; R = phenanthrenyl; Ar = 2,6-iPr2-C6H3)

  • Lee, Eun-Ji;Hong, Jin-Seok;Kim, Tae-Jeong;Kang, Young-Jin;Han, Eun-Me;Lee, Jae-Jung;Song, Ki-Hyung;Kim, Dong-Uk
    • Bulletin of the Korean Chemical Society
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    • v.26 no.12
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    • pp.1946-1952
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    • 2005
  • New group 15 organometallic compounds, M$(phenanthrenyl)_3$ (M = P (1), Sb (2), Bi (3)) have been prepared from the reactions of 9-phenanthrenyllithium with $MCl_3$. A reaction of 9-(diphenylphosphino)phenanthrene with 2,6-diisopropylphenyl azide led to the formation of (phenanthrenyl)${(Ph)}_2P$=N-(2,6-$^iPr_2C_6H_3$) (4). The crystal structures of 2 and 4 have been determined by single-crystal X-ray diffractions, both of which crystallize with two independent molecules in the asymmetric unit. Compound 2 shows a trigonal pyramidal geometry around the Sb atom with three phenanthrenyl groups being located in a screw-like fashion with an approximately $C_3$ symmetry. A significant amount of CH- -$\pi$ interaction exists between two independent molecules of 4. The phosphorus center possesses a distorted tetrahedral environment with P-N bond lengths of 1.557(3)$\AA$ (P(1) N) and 1.532(3)$\AA$ (P(2)-N), respectively, which are short enough to support a double bond character. One of the most intriguing structural features of 4 is an unusually diminished bond angle of C-N-P, attributable to the hydrogen bonding of N(1)-H(5A) [ca. 2.49$\AA$ between two adjacent molecules in crystal packing. The compounds 1-3 show purple emission both in solution and as films at room temperature with emission maxima ($\lambda_{max}$) at 349, 366, and 386 nm, respectively, attributable to the ligand centered $\pi$ $\rightarrow$ $\pi^\ast$ transition in phenanthrene contributed by the lone pair electrons of the Gp 15 elements. Yet the nature of luminescence observed with 4 differs in that it originates from $\pi$ (diisopropylbenzene)-$\pi^\ast$ (phenanthrene) transitions with the $\rho\pi$contribution from the nitrogen atom. The emission maximum of 4 is red-shifted ranging 350-450 nm due to the internal charge transfer from the phenanthrenyl ring to the N-arylamine group as deduced from the ab initio calculations.

ON EVALUATIONS OF THE CUBIC CONTINUED FRACTION BY A MODULAR EQUATION OF DEGREE 9

  • PAEK, DAE HYUN;YI, JINHEE
    • The Pure and Applied Mathematics
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    • v.23 no.3
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    • pp.223-236
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    • 2016
  • We show how to evaluate the cubic continued fraction $G(e^{-{\pi}\sqrt{n}})$ and $G(-e^{-{\pi}\sqrt{n}})$ for n = 4m, 4−m, 2 · 4m, and 2−1 · 4−m for some nonnegative integer m by using modular equations of degree 9. We then find some explicit values of them.

THE TENSION FIELD OF THE ENERGY FUNCTIONAL ON RIEMANNIAN SUBMERSION

  • Choi, Boo-Yong
    • Journal of the Chungcheong Mathematical Society
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    • v.24 no.2
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    • pp.239-245
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    • 2011
  • In this paper, we will study the tension field of the function related to a Riemannain submersion ${\pi}\;:\;N{\rightarrow}M$ with totally geodesic fibres. In case that the Riemannain submersion ${\pi}\;:\;N{\rightarrow}M$ particularly has a smooth map $f\;:\;M{\rightarrow}N$ which happens to be a section, we will show that tension field ${\tau}(f)$ of the energy functional can be decomposed into the horizontal and vertical parts.

EVALUATIONS OF THE ROGERS-RAMANUJAN CONTINUED FRACTION BY THETA-FUNCTION IDENTITIES REVISITED

  • Yi, Jinhee;Paek, Dae Hyun
    • The Pure and Applied Mathematics
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    • v.29 no.3
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    • pp.245-254
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    • 2022
  • In this paper, we use some theta-function identities involving certain parameters to show how to evaluate Rogers-Ramanujan continued fraction R($e^{-2{\pi}\sqrt{n}}$) and S($e^{-{\pi}\sqrt{n}}$) for $n=\frac{1}{5.4^m}$ and $\frac{1}{4^m}$, where m is any positive integer. We give some explicit evaluations of them.

${\pi}-A$ Characteristics of Stearic Acid LB Films (Stearic Acid Langmuir-Blodgett (LB) 막의 ${\pi}-A$ 특성)

  • Lee, Dae-Il;Choi, Yong-Sung;Chang, Sang-Mok;Kwon, Young-Soo
    • Proceedings of the KIEE Conference
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    • 1991.07a
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    • pp.241-243
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    • 1991
  • The LB technique is one of the most, powerful fabricating methods of organic ultra thin film, which deposits a monolayer film in molecular level onto the surface of the substrate. In order to fabricate the LB film with optimal condition, we have to deposite monolayer film at optimum depositing pressure. which is dependent on the kind of deposit materials. ${\pi}-A$ curve is one of the most important, criteria to determine the optimum pressure. In this paper, we obtained that the optimum pressure is $20{\sim}50(mN/m)$ from ${\pi}-A$ curve of the stearic acid. In our experiments, it was known that LB ultra thin film is deposited beat at 30(mN/m) by checking the characteristics of LB film.

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Low Temperature NMR Study on p-Fluorophenylthioxanthylium Ions (저온상태에서 NMR을 이용한 p-Fluorophenylthioxanthylium 양이온에 관한 연구)

  • Yang-Soo Ahn;Jung-Hyu Shin
    • Journal of the Korean Chemical Society
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    • v.26 no.3
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    • pp.165-171
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    • 1982
  • The thioxanthylium ion ard anthracenium ion have coplanar geometries. The empty $P_z$-orbitals of the positive centers in the cations, therefore, overlap with the ${\pi}$-orbitals of the fused benzen rings. These cations have aromatic characters, obeying Huckel's (4n + 2)${\pi}$ rule. The contribution of the sulfur atom to aromatic stabilization was estimated by comparing the ${^19F}$-nmr chemical shifts of the thioxanthylium ions and anthracenium ions.

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Photochemical Reduction of trans-1,2-Bispyrazylethylene (트란스-1,2-비스피라질에틸렌의 광화학적 환원)

  • Sang Chul Shim;Jeong Seok Chae
    • Journal of the Korean Chemical Society
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    • v.21 no.2
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    • pp.102-107
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    • 1977
  • Photochemical reduction of 1,2-bispyrazylethylene,a stilbene like heterocompound, was studied in hydrogen donating solvents and reduction product, 1, 2-bispyrazylethane, was identified. Salt and solvent effects on the quantum yields of the reduction, sensitization and quenching studies showed that the reactive state for the photochemical reduction of the compound is $(n,{\pi}^*)^1$ state rather than $({\pi},{\pi}^*)^1$ state.

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Tuning of electrical hysteresis in the aligned $SnO_2$ nanowire field effect transistors by controlling the imidization of polyimide gate dielectrics

  • Hong, Sang-Gi;Kim, Dae-Il;Kim, Gyu-Tae;Ha, Jeong-Suk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.161-161
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    • 2010
  • n-type 반도체 특성을 띄는 $SnO_2$ 나노선은 가스 센서, 투명 소자, 태양광 전지 등으로 널리 사용되고 있다. 본 연구에서는 화학기상증착법으로 성장한 $SnO_2$ 나노선으로 폴리이미드 (PMDA-ODA: PI) 박막을 게이트 절연막으로 이용한 전계효과트랜지스터를 플렉서블 기판에 제작하고 전기적 특성을 분석하였다. 전자 전달 특성 곡선으로부터 n-형의 반도체 특성을 확인하였으며, 대부분의 산화금속 나노선에서와 같이 매우 큰 전기적 히스테리시스가 관찰되었다. 산화금속계통 나노선 소자의 히스테리시스는 나노선 표면에 산소 및 물 분자가 흡착되어 생기는 전자 갇힘 현상이 가장 큰 원인으로 알려져 있는데, 이러한 히스테리시스를 조절하거나 없애는 것은 소자의 특성 향상에 있어 매우 중요하다. 한편 PI 절연막에는 느린 분극 현상을 만드는 OH 반응기가 존재하기 때문에 나노선과는 반대 방향의 히스테리시스를 보일 것으로 예상된다. 본 연구에서는 제작된 $SnO_2$ 나노선 FET에서 PI 게이트 절연막의 경화 정도에 따른 히스테리시스를 조사하였다. FT-IR 측정에 따르면, PI 필름에 존재하는 OH 반응기는 PI를 경화시킴에 따라 감소하였으며 전기적인 히스테리시스도 감소하였다. 따라서, 절연막을 경화시키지 않았을 때는 PI 내부에 다량의 OH 반응기가 존재하여, PI의 히스테리시스가 나노선 히스테리시스보다 더 크게 작용하여, 전체적으로는 PI의 특성인 반시계 (counterclockwise) 방향의 히스테리시스를 나타내었다. 한편, 절연막을 완전히 경화시키면, OH 반응기는 대부분 사라지고 나노선의 히스테리시스만 발현되어 소자는 시계방향의 히스테리시스를 보였다. 이러한 실험결과를 통해, PI 박막을 $250^{\circ}C$ 에서 약 7분간 경화시켰을 때 나노선과 절연막의 히스테리시스가 가장 이상적으로 상쇄되어 전체적으로 히스테리시스가 매우 작아진 것을 관찰할 수 있었다. 이는 향후 나노선 FET의 안정적인 응용에 매우 유용한 결과로 활용될 것으로 예측된다.

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