• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1081-1088
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• 2013

Two new metal-free organic dyes bridged by anthracene-mediated ${\pi}$-conjugated moieties were successfully synthesized for use in a dye-sensitized solar cell (DSSC). A N,N-diphenylthiophen-2-amine unit in these dyes acts as an electron donor, while a (E)-2-cyano-3-(thiophen-2-yl)acrylic acid group acts as an electron acceptor and an anchoring group to the $TiO_2$ electrode. The photovoltaic properties of (E)-2-cyano-3-(5-((10-(5-(diphenylamino)thiophen-2-yl)anthracen-9-yl)ethynyl)thiophen-2-yl)acrylic acid (DPATAT) and (E)-2-cyano-3-(5'-((10-(5-(diphenylamino)thiophen-2-yl)anthracen-9-yl)ethynyl)-2,2'-bithiophen-5-yl)acrylic acid (DPATABT) were investigated to identify the effect of conjugation length between electron donor and acceptor on the DSSC performance. By introducing an anthracene moiety into the dye structure, together with a triple bond and thiophene moieties for fine-tuning of molecular configurations and for broadening the absorption spectra, the short-circuit photocurrent densities ($J_{sc}$), and open-circuit photovoltages ($V_{oc}$) of DSSCs were improved. The improvement of $J_{sc}$ in DSSC made of DPATABT might be attributed to much broader absorption spectrum and higher molecular extinction coefficient (${\varepsilon}$) in the visible wavelength range. The DPATABT-based DSSC showed the highest power conversion efficiency (PCE) of 3.34% (${\eta}_{max}$ = 3.70%) under AM 1.5 illumination ($100mWcm^{-2}$) in a photoactive area of $0.41cm^2$, with the $J_{sc}$ of $7.89mAcm^{-2}$, the $V_{oc}$ of 0.59 V, and the fill factor (FF) of 72%. In brief, the solar cell performance with DPATABT was found to be better than that of DPATAT-based DSSC.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.214-219
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• 2011

Today, various activities to save energy are being conducted around the world. Even in our country, carbon reduction policy is being conducted for low carbon green growth and with this movement, effort to replace energy sources by recognizing the problems on environment pollution and resource exhaustion due to the indiscrete usage of fossil fuel is being made. Therefore, active study on renewable energy is in progress as part of effort to replace the energy supply through fossil fuel and solar ray industry has rapidly developed receiving big strength of renewable energy policies. The conclusion of this study measuring the surface temperature change of single crystal and polycrystalline PV module in green roof system and non-green roof system aspect are as follows. There was approximately $4^{\circ}C$ difference in PV module temperature in green roof system and non-green roof system aspect and this has the characteristic to decrease 0.5% when the temperature rises by $1^{\circ}C$ when the front side of the module is $20^{\circ}C$ higher than the surrounding air temperature following the characteristic of solar cells. It can be concluded that PV efficiency will be come better when it is $4^{\circ}C$ lower. Also, in result of temperature measurement of the module back side, there was $5^{\circ}C$ difference of PV module installed on the PV module back side and green roof system side on the 5th, $3^{\circ}C$ on the 4th, $2^{\circ}C$ on the 5th to show decreasing temperature difference as the air temperature dropped, but is judged that there will be higher temperature difference due to the evapotranspiration latent heat effect of green roof system floor side as the temperature rises. Based on this data, it is intended to be used as basic reference to maximize efficiency by applying green roof system and PV system when building non-green roof system flat roof.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.493-498
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• 1998

CdTe films were deposited by close spaced sublimation with various substrate temperatures, cell areas, and thicknesses of CdTe and ITO layers and their effects on the CdS/CdTe solar cells were investigated. The resistivity of CdTe layers employed in this study was 3$\times$ $10^{4}$$\Omega$cm For constant substrate temperature the optimum substrate ternperature for CdTe deposition was $600^{\circ}C$. To obtain larger grain size and more compact microstructure, CdTe film was initially deposited at 62$0^{\circ}C$, and then deposited at 54$0^{\circ}C$. The CdTe film was annealed at 62$0^{\circ}C$ and $600^{\circ}C$ sequentially to maintain the CdTe film quality. The photovoitaic cell efficiency improved by the "two-wave" process. For constant substrate temperature, the optimum thickness for CdTe was 5-6$\mu m$. Above 6$\mu m$ CdTe thickness, the bulk resistance of CdTe film degraded the cell performance. As the cell area increased the $V_{oc}$ remained almost constant, while $J_{sc}$ and FF strongly decreased because of the increase of lateral resistance of the ITO layer. The optimum thickness of the ITa layer in this study was 300~450nm. In this experiment we obtained the efficiency of 9.4% in the O.5cm' cells. The series resistance of the cell should be further reduced to increase the fill factor and improve the efficiency.

• Journal of Energy Engineering
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• v.25 no.2
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• pp.94-100
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• 2016

ESS(Energy Storage System) is an important source that keeps power supply stable and utilizes electricity efficiently. For example, ESS contributes to resolve power supply imbalance, stabilize new renewable energy output and regulate frequency. ESS is predicted to be expanded to 55.9GWh of installed capacity by 2023, which is 30 times more than that of 2014. To raise competitiveness of domestic ESS industry in this increasing world market, we have disseminated load-shift ESS for continuous power supply imbalance with FR ESS, and also necessity to secure domestic track record is required. However in case of FR ESS, utility of installing thermal power plant is generally generated within 5% range of rated capacity, so that scalability of domestic market is low without dramatic increase of thermal power plant. Necessity of load-shift ESS dissemination is also decreasing effected by surplus backup power securement policy, raising demand for new dissemination model. New dissemination model is promising for $CO_2$ reduction effect in spite of intermittent output. By stabilizing new renewable energy output in connection with new renewable energy, and regulating system input timing of new renewable energy generation rate, it is prospected model for 'post-2020' regime and energy industry. This research presents a policy alternatives of REC multiplier calculation method to induce investment after outlining PV-connected ESS charge/discharge mode to reduce GHG emission, This alternative is projected to utilize GHG emission reduction methodology for 'Post-2020' regime, big issue of new energy policy.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.84-84
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• 2000

수소화된 비정질 실리콘(a-Si:H)과 미세결정질 실리콘 ($\mu$c-Si:H)은 저온.건식 공정인 PECVD로 값싼 유리 기판을 사용하여 넓은 면적에 증착이 가능하다는 큰 장점으로 인해 광전소자(photovoltaic device)와 박막 트랜지스터(TFTs)등에 폭넓게 응용되어 왔으며 최근에는 nm 크기의 실리콘 결정(nc-Si)에서 가시광선 영역의 발광 현상이 발견됨에 따라 광소자로서의 특성을 제어하기 위해서는 성장 조건과 공정 변수에 따른 구조 변화에 대한 연구가 선행되어야 한다. 본 연구에서는 UHV-ECR-PECVD 법을 이용하여 H2로 희석된 SiH4로부터 a-Si:H과 $\mu$c-Si:H를 증착하였다. 그림 1은 SiH4 20sccm/H2 50sccm/25$0^{\circ}C$에서 기판의 DC bias를 변화시키면서 박막을 증착시킬 때 나타나는 박막의 구조 변화를 raman spectrum의 To phonon peak의 위치와 반가폭의 변화로 나타낸 것이다. 비정질 실리콘 박막은 DC bias를 증가시킴에 따라 무질서도가 증가하다가 어떤 critical DC bias에서 최대치를 이룬후 다시 질서도가 증가한다. 이온의 충격력에 의해 박막내에 응력이 축적되면 박막의 에너지 상태가 높아지고 이 축적된 응력이 ordering에 대한 에너지 장벽을 넘을 수 있을 만큼 커지게 되면 응력이 풀리면서 ordering이 가능해지는 것으로 생각된다. 그림 2는 수소 결합 형태의 변화이다. 박막의 무질서도가 증가할 경우 알려진 바와 같이 2000cm-1근처의 peak은 감소하고 2100cm-1 부근이 peak이 증가하는 현상을 보였다. 본 논문에서는 여러 공정 변수, 특히 DC bias에 따르는 박막의 구조 변화와 다른 성장 조건(온도, 유량비)이 critical DC bias나 결정화, 결정성 등에 미치는 영향에 대한 분석결과를 보고하고자 한다.등을 이용하여 광학적 밴드갭, 광흡수 계수, Tauc Plot, 그리고 파장대별 빛의 투과도의 변화를 분석하였으며 각 변수가 변화함에 따라 광학적 밴드갭의 변화를 정량적으로 조사함으로써 분자결합상태와 밴드갭과 광 흡수 계수간의상관관계를 규명하였고, 각 변수에 따른 표면의 조도를 확인하였다. 비정질 Si1-xCx 박막을 증착하여 특성을 분석한 결과 성장된 박막의 성장률은 Carbonfid의 증가에 따라 다른 성장특성을 보였고, Silcne(SiH4) 가스량의 감소와 함께 박막의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다. 20$0^{\circ}C$이상으로 증가시켜도 광투과율은 큰 변화를 나타내지 않았다.부터 전분-지질복합제의 형성 촉진이 시사되었다.이것으로 인하여 호화억제에 의한 노화 방지효과가 기대되었지만 실제로 빵의 노화는 현저히 진행되었다. 이것은 quinua 대체량 증가에 따른 반죽의 안정성이 저하되어 버린 것으로 생각되어진다. 더욱이 lipase를 첨가하면 반죽이 분화하는 경향이 보여졌지만 첨가량 75ppm에 있어서 상당히 비용적의 증대가 보였다. 이것은 lipase의 가수분해에 의해

• Korean Journal of Agricultural and Forest Meteorology
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• v.23 no.2
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• pp.100-107
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• 2021

An agrivoltaic system (AVS) is a system of innovation that comprises productions of photovoltaic power and agricultural crops on the same area. However, the decline in crop yield will be fatally occurred because the pigments of crop absorbs less light energy under AVS. In addtion, the photosynthetic capacity of crop grown under the partial shading of AVS is not well reported. In this study, the electron transport rate (ETR) and non-photochemical fluorescence quenching (NPQ) of soybean and rice under the AVS in Boseong and Naju was investigated using chlorophyll fluorescence measurement. The ETR value of soybean and rice under AVS were not significantly differed by location. It represents that the photophosphorylation rate of the crops is not critically different. It means that the decreases in total photosynthesis under AVS were mostly affected by the amount of light absorbed by leaves. Under AVS the photosynthesis of crops will be lower than field crops grown in open fields. This is because the crops under AVS observed higher NPQ, which means that the available energy cannot distribute to photophosphorylation reaction.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.