• 전력전자학회논문지
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• 제13권5호
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• pp.369-375
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• 2008

본 논문에서는 Z-소스 인버터를 사용하여 단상 계통 연계형 태양광 시스템을 제어하는 기법을 제시하였다. 인버터 스위칭소자의 전압 스트레스를 고려하여 광전지 출력전압에 대한 계통 연계형 Z-소스 인버터의 동작영역을 분석하였다. 스위칭 손실을 감소시키면서 shoot-through 시간을 효율적으로 제어하는 스위칭 패턴을 사용하였다. 시뮬레이션 및 32-비트 DSP를 사용한 실험을 통하여 계통연계형 Z-소스 인버터의 제어 시스템의 성능을 평가하였다.

• Journal of Power Electronics
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• 제12권1호
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• pp.172-180
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• 2012

Z-source inverters (ZSI) are used to realize both DC voltage boost and DC-AC inversion in single stage with a reduced number of power switching devices. A traditional MPPT control algorithm provides a shoot-through interval which should be inserted in the switching waveforms of the inverter to output the maximum power to the Z-network. At this instant, the voltage across the Z-source capacitor is equal to the output voltage of a PV array at the maximum power point (MPP). The control of the Z-source capacitor voltage beyond the MPP voltage of a PV array is not facilitated in traditional MPPT algorithms. This paper presents a unified MPPT control algorithm to simultaneously achieve MPPT as well as Z-source capacitor voltage control. Development and implementation of the proposed algorithm and a comparison with traditional results are discussed. The effectiveness of the proposed unified MPPT control strategy is implemented in Matlab/Simulink software and verified by experimental results.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 춘계학술대회
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• pp.136-141
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• 2005

The application of photovoltaics into building as integrated building components has been paid more attention worldwide. Photovoltaics or solar electric modules are solid state devices, directly converting solar radiation into electricity; the process does not require fuel and any moving parts, and produce no pollutants. So, the purpose of this research is to present how to get PVIB which can be applied building facade and how to apply it. From the basis of these results this study will intend to develop an integrated for optimal design of PV System.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1306-1307
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• 2011

Recently, the small scale photovoltaic (PV) electronic devices are drawing attention as the upcoming PV generation system. The PV system is commonly used in small scale PV applications such as LED lighting and cell phone. This paper proposes photovoltaic output sensorless (POS) maximum power point tracking (MPPT) control for a small scale charging system of PV-nickel metal hydride battery using field-programmable gate array (FPGA) controller. A converter is connected to a small scale PV cell and battery, and performs the POS MPPT at the battery terminal current instead of being at the PV cell output voltage and current. The FPGA controller and converter operate based on POS MPPT method. The experimental results show that the nickel metal hydride battery is charged by the maximum PV output power.

• Current Photovoltaic Research
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• 제4권3호
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• pp.98-107
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• 2016

Third-generation photovoltaics are of low cost based on solution processes and are targeting a high efficiency. To meet the commercial demand, however, significant improvements of both efficiency and stability are required. In this sense, interfacial engineering can be useful key to solve these issues because trap sites and interfacial energy barrier and/or chemical instability at organic/organic and organic/inorganic interfaces are critical factors of efficiency and stability degradation. Here, we thoroughly review the interfacial engineering strategies applicable to three representative third-generation photovoltaics - organic, perovskite, colloidal quantum dot solar cell devices.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.312-312
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• 2006

Block copolymers with well-defined nanoscopic structures have recently gained much attention for their potential uses as functional nanostructures. Here, we show that nanoporous templates made from polystyrene-block-poly (methyl methacrylate) (PS-b-PMMA) satisfy a novel design concept. At first, arrays of nanoscopic cylindrical microdomains oriented normal to the surface can easily be prepared. Then, we fabricated ultra high density arrays of conducting polymer as poly(pyrrole) (Ppy) and poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires with diameters of $25{\sim}40\;nm$ on the ITO glass by electropolymerization of the monomers inside nanoholes. These high density arrays of conducting polymer nanowires could be used as P-type materials for photovoltaic devices.

• Journal of Electrochemical Science and Technology
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• 제3권4호
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• pp.149-153
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• 2012

Among the various solar-hydrogen production techniques a combination of a photovoltaic (PV) and an electrolytic cell into one single system, a monolithic PV-electrolytic cell, has been suggested as a promising one in terms of efficiency and stability. In this mini-review, we describe our recent efforts on the fabrication of the monolithic PV-electrolytic cell. Particularly, we focus on the electrocatalysts for water oxidation and its fabrication method suitable for a monolithic PV-electrolytic cell. We also introduce proto-type devices with a dye-sensitized solar cell module and an InGaP/GaAs photoelectrodes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.49-54
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• 1992

Devices of ITO/CdS/CdTe/Te/Al were prepared by Electron-Beam deposition under a vacuum of $7{\times}10^{-6}$[torr]. Optical, Electrical, Structural and Photovoltaic properties of thin film CdS/CdTe at substrate. temperature 300~500[$^{\circ}C$] were also investigated, The structure of CdTe films deposited was of the zincblende type a preferential orientation of the (111) plane parallel to the substrate, the CdTe dark resistivity was about $10^6[{\Omega}cm]$. The conversion, efficiency of the cell increased with increasing substrate temperature. The best-fabricated Cell was a conversion efficiency of 9.1[%].

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.261-265
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• 2012

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.270-275
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• 2012

Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.