• 제목/요약/키워드: Photovoltaic cells

검색결과 799건 처리시간 0.029초

Investigated properties of Low temperature curing Ag Paste for Silicon Hetero-junction Solar Cell

  • Oh, Donghyun;Jeon, Minhan;Kang, Jiwoon;Shim, Gyeongbae;Park, Cheolmin;Lee, Youngseok;Kim, Hyunhoo;Yi, Junsin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.160-160
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    • 2016
  • In this study, we applied the low temperature curing Ag paste to replace PVD System. The electrode formation of low temperature curing Ag paste for silicon Hetero-junction solar cells is important for improving device characteristics such as adhesion, contact resistance, fill factor and conversion efficiency. The low temperature curing Ag paste is composed various additives such as solvent, various organic materials, polymer, and binder. it depends on the curing temperature conditions. The adhesion of the low temperature curing Ag paste was decided by scratch test. The specific contact resistance was measured using the transmission line method. All of the Ag electrodes were experimented at various curing temperatures within the temperature range of $160^{\circ}C-240^{\circ}C$, at $20^{\circ}C$ intervals. The curing time was also changed by varying the conditions of 10-50min. In the optimum curing temperature $200^{\circ}C$ and for 20 min, the measured contact resistance is $19.61m{\Omega}cm^2$. Over temperature $240^{\circ}C$, confirmed bad contact characteristic. We obtained photovoltaic parameter of the industrial size such as Fill Factor (FF), current density (Jsc), open-circuit voltage (Voc) and convert efficiency of up to 76.2%, 38.1 mA/cm2, 646 mV and 18.3%, respectively.

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CdTe계 태양전지에 응용되는 ZnTe 박막의 전기화학적 제조 및 Cu 도핑 연구 (A Study on the Electrochemical Deposition and p-Type Doping of ZnTe Films as a Back Contact Material for CdTe Photovoltaic Solar Cells)

  • 김동환;전용석;김강진
    • 한국재료학회지
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    • 제7권10호
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    • pp.856-862
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    • 1997
  • 박막형 CdTe/CdS 태양전지의 배면전극(back contacts)물질로서 Cu도핑된 ZnTe 박막(ZnTe:Cu)을 전착법(electroplating)으로 제조하는 연구를 수행하였다. Sulfate계의 전해질 수용액에서 CdTe 기판과 투명전극으로 코팅된 유리(In$_{2}$O$_{3}$: Sn, ITO)기판 위에 ZnTe 박막을 코팅하는 방법으로써 potentiostat와 기판(cathode), Pt counter electrode, Ag/AgCI 표준전극으로 구성된 장치를 사용하여 pH=2.5-4, T=70-8$0^{\circ}C$, 0.02M $Zn^{2+}$ 1x$10^{-4}$M TeO$_{2}$, 0.2M $K_{2}$SO$_{4}$조건에서 -0.800 Vs~-0.975 V 범위의 전압(V$_{a}$ )에 걸쳐 실험하였다. ITO박막을 기판으로 사용하여 cyclic voltammogram을 작성한 결과 약 -0.50 V 에서 Te환원 peak이 나타났다. Auger electron spectroscopy (AES)로 조성분석한 결과 표면에서 Zn signal이 강하게 나왔고 시편의 두께에 따라 Zn의 signal감소하는 반면 Cd signal은 증가하는 것이 확인되었다. SEM 사진으로부터 ZnTe의 표면이 작은 입자 (0.2$\mu\textrm{m}$ 이하)로 구성되어 있으며 낮은 V$_{a}$ 에서는 입자가 작아지면서 조직이 치밀해짐이 관찰되었다. Optical transmission방법에 의하여 ITO기판위에 입혀진 박막의 밴드갭은 2.5 eV으로 측정되었다. 수용액중의 Cu$_{2+}$와 triethanolamine(TEA)은 산성용액에서 착물형성이 이루어지지 않았으며 1,10-phenanthroline과는 pH=2에서도 착물이 형성되었다.

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Properties of Dye Sensitized Solar Cells with Porous TiO2 Layers Using Polymethyl-Methacrylate Nano Beads

  • Choi, Minkyoung;Noh, Yunyoung;Kim, Kwangbae;Song, Ohsung
    • 한국재료학회지
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    • 제26권4호
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    • pp.194-199
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    • 2016
  • We prepared polymethyl methacrylate (PMMA) beads with a particle size of 80 nm to improve the energy conversion efficiency (ECE) by increasing the effective surface area and the dye absorption ability of the working electrodes (WEs) in a dye sensitized solar cell (DSSC). We prepared the $TiO_2$ layer with PMMA beads of 0.0~1.0 wt%; then, finally, a DSSC with $0.45cm^2$ active area was obtained. Optical microscopy, transmission electron microscopy, field emission scanning electron microscopy, and atomic force microscopy were used to characterize the microstructure of the $TiO_2$ layer with PMMA. UV-VIS-NIR was used to determine the optical absorbance of the WEs with PMMA. A solar simulator and a potentiostat were used to determine the photovoltaic properties of the PMMA-added DSSC. Analysis of the microstructure showed that pores of 200 nm were formed by the decomposition of PMMA. Also, root mean square values linearly increased as more PMMA was added. The absorbance in the visible light regime was found to increase as the degree of PMMA dispersion increased. The ECE increased from 4.91% to 5.35% when the amount of PMMA beads added was increased from 0.0 to 0.4 wt%. However, the ECE decreased when more than 0.6 wt% of PMMA was added. Thus, adding a proper amount of PMMA to the $TiO_2$ layer was determined to be an effective method for improving the ECE of a DSSC.

인쇄전자 산업시장의 현황과 전망 (The present status and future aspects of the market for printed electronics)

  • 박정용;박재수
    • 한국정보통신학회논문지
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    • 제17권2호
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    • pp.263-272
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    • 2013
  • 인쇄전자는 다양한 기판에 기능적 소자를 프린팅한다. 인쇄방법은 스크린 인쇄, 플렉소그라피, 오프셋 리소그라피와 잉크젯 방식을 통해 적정한 패턴을 만든다. 인쇄기법을 응용하여 활용하기 때문에 전통적인 극소전자공학에 비하여 생산과정이 간단하고 비용 또한 저렴하다. 잉크젯 및 R2R(Roll to Roll)기술이 발전을 거듭해 왔기 때문에 디스플레이에서 태양전지의 제조까지 그 기술이 활용된다. IDTech(2010)에 의하면, 전자인쇄시장은 2010년에 10.99(억달러)에서 2020년 55.10(억달러)로 커질 것이며, 2030년에는 반도체산업의 규모보다 큰 3,000억 달러가 될 것으로 전망하고 있다. 센서, 배터리, 광전지, 메모리, 스마트카드 시장이 확대되는 등 조명에서 디스플레이까지 인쇄전자산업시장은 성장할 것이다.

일사량 변화를 고려한 PV 시스템의 개선된 P&O 알고리즘 개발 (Development of Improved P&O Algorithm of PV System Considering Insolation variation)

  • 최정식;고재섭;정동화
    • 조명전기설비학회논문지
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    • 제24권4호
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    • pp.166-176
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    • 2010
  • 태양전지의 출력 특성은 비선형이고 온도와 일사량에 많은 영향을 받는다. 최대전력점 추종 제어는 태양광 발전의 출력을 최대로 하기 위해 사용되는 제어기법이다. 태양광발전 시스템의 출력 및 효율을 증가 시키기 위해 더욱 우수한 최대전력점 추종 제어기법이 필요하다. 본 논문에서는 태양광 발전 시스템의 효율을 개선하기 위해 일사량을 고려한 새로운 최대전력점 추종 제어 알고리즘을 제시한다. 제시한 알고리즘은 종래의 P&O방법과 CV 방법을 혼합한 것이며, PSIM 시뮬레이터를 통하여 종래의 MPPT 알고리즘과 다양한 일사량 조건에서 성능시험을 비교하였다. 제시한 알고리즘은 종래의 알고리즘에 비해 출력의 자려진동없이 다양한 일사량에서 우수한 성능을 나타냈다. 이로서 본 논문에서 제시한 HB 방법의 최대전력점 추종 제어 알고리즘의 타당성을 입증하였다.

화합물 $Cu_2ZnSnS_4$ bulk 타겟을 사용하여 제조한 박막 특성에 관한 연구 (A study on the properties of thin films using a $Cu_2ZnSnS_4$ compound target)

  • 설재승;정영희;남효덕;배인호;김규호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.869-873
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    • 2002
  • $Cu_2ZnSnS_4$ (CZTS) thin film is one of the candidate materials for the solar cell. It has an excellent optical absorption coefficient as well as appropriate 1.4~1.5eV band gap. The purpose of this study is replacing a half of high-cost Indium(In) atoms with low-cost Zinc(Zn) atoms and the other half with low-cost Tin(Sn) atoms in the lattice of CIS. In annealing process of thin films deposited with mixture target, the thin films were appeared the peeling. The resistivity was decreased. Thin films were deposited on ITO glass substrates using a compound target which were made by $CU_2S$, ZnS, $SnS_2$ powder were sintered in the atmosphere of Al at room temperature by rf magnetron sputtering We investigated potentialities of a low-cost material for the solar cell by measuring of thin film composition, the structure and optical properties. We could get an appropriate $Cu_2ZnSnS_4$ composition A (112) preferred orientation was appeared without annealing temperature as shown in the diffraction peaks of the CIS cells and was available for photovoltaic thin film materials. The band gap increased from 1.4 to 1.7eV as the composition ratio of Zn/Sn.. The optical absorption coefficient of the thin film was above $10^4cm^{-1}$.

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Chemical Bath Depsoition법에 의한 $Cd_{1-x}$$Zn_x$/S 박막의 제조 및 특성에 관한 연구 (Growth and Properties of $Cd_{1-x}$$Zn_x$/S Films Prepared by Chemical Bath Deposition for Photovoltaic Devices)

  • 송우창;이재형;김정호;박용관;양계준;유영식
    • 한국전기전자재료학회논문지
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    • 제14권2호
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    • pp.104-110
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    • 2001
  • Structural, optical and electrical properties of Cd$_{1-x}$ Zn$_{x}$S films deposited by chemical bath deposition(CBD), which is a very attractive method for low-cost and large-area solar cells, are presented. Especially, in order to control more effectively the zinc component of the films, zinc acetate, which was used as the zinc source, was added in the reaction solution after preheating the reaction solution and the pH of the reaction solution decreased with increasing the concentration of zinc acetate. The films prepared after preheating and pH control had larger zinc component and higher optical band gap. The crystal structures of Cd$_{1-x}$ Zn$_{x}$S films was a wurtzite type with a preferential orientation of the (002) plane and the lattice constants of the films changed from the value for CdS to those for ZnS with increasing the mole ratio of the zinc acetate. The minimum lattice mismatch between Cd$_{1-x}$ Zn$_{x}$S and CdTe were 2.7% at the mole ratio of (ZnAc$_2$)/(CdAc$_2$+ZnAc$_2$)=0.4. As the more zinc substituted for Cd in the films, the optical transmittance improved, while the absorption edge shifted toward a shorterwavelength. the photoconductivity of the films was higher than the dark conductivity, while the ratio of those increased with increasing the mole ratio of zinc acetate. acetate.

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급속열처리 분위기에 따른 화합물 태양전지용 CdS 박막의 특성변화 (Characterization of CdS Thin Films for Compound Photovoltaic Applications by Atmospheres of Rapid Thermal Process)

  • 박승범;권순일;이석진;정태환;양계준;임동건;박재환;송우창
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.105-106
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    • 2008
  • Structural, optical and electrical properties of CdS films deposited by chemical bath deposition (CBD), which are a very attractive method for low-cost and large-area solar cells, are presented. Cadmium sulfide (CdS) is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS films have a great application potential such as solar cell, optical detector and optoelectronics device. In this paper, effects of Rapid Thermal Process (RTP) on the properties of CdS films were investigated. The CdS films were prepared on a glass by chemical bath deposition (CBD) and subsequently annealed at standard temperature $(400^{\circ}C)$ and treatment time (10 min) in various atmospheres (air, vacuum and $N_2$). The CdS films treated RTP in $N_2$ for to min were showed larger grain size and higher carrier density than the other samples.

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3D 스캔을 이용한 실리콘 태양전지의 휨 현상 측정 연구 (Measurement of Bow in Silicon Solar Cell Using 3D Image Scanner)

  • 윤필영;백태현;송희은;정하승;신승원
    • 대한기계학회논문집B
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    • 제37권9호
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    • pp.823-828
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    • 2013
  • 실리콘 태양전지의 두께를 줄일 경우 여러 문제점이 발생하게 되는데 그 중에서 태양전지의 휨 현상은 제품 수율의 직접적인 원인이 되어 제품 상용화에 가장 큰 걸림돌이 되고 있다. 본 연구에서는 태양전지의 실리콘 웨이퍼 두께를 가변하였을 때의 휨 정도에 대해 정밀하게 측정하고자 하였다. 측정결과의 신뢰성을 높이고 비 대칭성 형상에 대해 자세하고 정밀하게 분석하기 위해 3D 이미지 스캐너를 사용하였다. 그 결과 실리콘 웨이퍼의 두께가 감소할수록 휨 정도는 급격하게 증가하고 곡률 또한 증가하는 것을 확인할 수 있었다. 실리콘 웨이퍼의 두께가 감소할 수록 휨 정도의 편차가 증가하여 형상의 비 대칭성이 증가하는 것 또한 확인되었다. 또한 Ag 전극의 부착이 휨 현상을 어느 정도 감소시키는 것을 알 수 있었다.

실리콘 용탕으로부터 직접 제조된 태양광용 다결정 실리콘의 SiC 오염 연구 (SiC Contaminations in Polycrystalline-Silicon Wafer Directly Grown from Si Melt for Photovoltaic Applications)

  • 이예능;장보윤;이진석;김준수;안영수;윤우영
    • 한국주조공학회지
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    • 제33권2호
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    • pp.69-74
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    • 2013
  • Silicon (Si) wafer was grown by using direct growth from Si melt and contaminations of wafer during the process were investigated. In our process, BN was coated inside of all graphite parts including crucible in system to prevent carbon contamination. In addition, coated BN layer enhance the wettability, which ensures the favorable shape of grown wafer by proper flow of Si melt in casting mold. As a result, polycrystalline silicon wafer with dimension of $156{\times}156$ mm and thickness of $300{\pm}20$ um was successively obtained. There were, however, severe contaminations such as BN and SiC on surface of the as-grown wafer. While BN powders were easily removed by brushing surface, SiC could not be eliminated. As a result of BN analysis, C source for SiC was from binder contained in BN slurry. Therefore, to eliminate those C sources, additional flushing process was carried out before Si was melted. By adding 3-times flushing processes, SiC was not detected on the surface of as-grown Si wafer. Polycrystalline Si wafer directly grown from Si melt in this study can be applied for the cost-effective Si solar cells.