• 한국재료학회지
• /
• 제26권4호
• /
• pp.194-199
• /
• 2016

We prepared polymethyl methacrylate (PMMA) beads with a particle size of 80 nm to improve the energy conversion efficiency (ECE) by increasing the effective surface area and the dye absorption ability of the working electrodes (WEs) in a dye sensitized solar cell (DSSC). We prepared the $TiO_2$ layer with PMMA beads of 0.0~1.0 wt%; then, finally, a DSSC with $0.45cm^2$ active area was obtained. Optical microscopy, transmission electron microscopy, field emission scanning electron microscopy, and atomic force microscopy were used to characterize the microstructure of the $TiO_2$ layer with PMMA. UV-VIS-NIR was used to determine the optical absorbance of the WEs with PMMA. A solar simulator and a potentiostat were used to determine the photovoltaic properties of the PMMA-added DSSC. Analysis of the microstructure showed that pores of 200 nm were formed by the decomposition of PMMA. Also, root mean square values linearly increased as more PMMA was added. The absorbance in the visible light regime was found to increase as the degree of PMMA dispersion increased. The ECE increased from 4.91% to 5.35% when the amount of PMMA beads added was increased from 0.0 to 0.4 wt%. However, the ECE decreased when more than 0.6 wt% of PMMA was added. Thus, adding a proper amount of PMMA to the $TiO_2$ layer was determined to be an effective method for improving the ECE of a DSSC.

• 한국정보통신학회논문지
• /
• 제17권2호
• /
• pp.263-272
• /
• 2013

인쇄전자는 다양한 기판에 기능적 소자를 프린팅한다. 인쇄방법은 스크린 인쇄, 플렉소그라피, 오프셋 리소그라피와 잉크젯 방식을 통해 적정한 패턴을 만든다. 인쇄기법을 응용하여 활용하기 때문에 전통적인 극소전자공학에 비하여 생산과정이 간단하고 비용 또한 저렴하다. 잉크젯 및 R2R(Roll to Roll)기술이 발전을 거듭해 왔기 때문에 디스플레이에서 태양전지의 제조까지 그 기술이 활용된다. IDTech(2010)에 의하면, 전자인쇄시장은 2010년에 10.99(억달러)에서 2020년 55.10(억달러)로 커질 것이며, 2030년에는 반도체산업의 규모보다 큰 3,000억 달러가 될 것으로 전망하고 있다. 센서, 배터리, 광전지, 메모리, 스마트카드 시장이 확대되는 등 조명에서 디스플레이까지 인쇄전자산업시장은 성장할 것이다.

• 조명전기설비학회논문지
• /
• 제24권4호
• /
• pp.166-176
• /
• 2010

태양전지의 출력 특성은 비선형이고 온도와 일사량에 많은 영향을 받는다. 최대전력점 추종 제어는 태양광 발전의 출력을 최대로 하기 위해 사용되는 제어기법이다. 태양광발전 시스템의 출력 및 효율을 증가 시키기 위해 더욱 우수한 최대전력점 추종 제어기법이 필요하다. 본 논문에서는 태양광 발전 시스템의 효율을 개선하기 위해 일사량을 고려한 새로운 최대전력점 추종 제어 알고리즘을 제시한다. 제시한 알고리즘은 종래의 P&O방법과 CV 방법을 혼합한 것이며, PSIM 시뮬레이터를 통하여 종래의 MPPT 알고리즘과 다양한 일사량 조건에서 성능시험을 비교하였다. 제시한 알고리즘은 종래의 알고리즘에 비해 출력의 자려진동없이 다양한 일사량에서 우수한 성능을 나타냈다. 이로서 본 논문에서 제시한 HB 방법의 최대전력점 추종 제어 알고리즘의 타당성을 입증하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.869-873
• /
• 2002

$Cu_2ZnSnS_4$ (CZTS) thin film is one of the candidate materials for the solar cell. It has an excellent optical absorption coefficient as well as appropriate 1.4~1.5eV band gap. The purpose of this study is replacing a half of high-cost Indium(In) atoms with low-cost Zinc(Zn) atoms and the other half with low-cost Tin(Sn) atoms in the lattice of CIS. In annealing process of thin films deposited with mixture target, the thin films were appeared the peeling. The resistivity was decreased. Thin films were deposited on ITO glass substrates using a compound target which were made by $CU_2S$, ZnS, $SnS_2$ powder were sintered in the atmosphere of Al at room temperature by rf magnetron sputtering We investigated potentialities of a low-cost material for the solar cell by measuring of thin film composition, the structure and optical properties. We could get an appropriate $Cu_2ZnSnS_4$ composition A (112) preferred orientation was appeared without annealing temperature as shown in the diffraction peaks of the CIS cells and was available for photovoltaic thin film materials. The band gap increased from 1.4 to 1.7eV as the composition ratio of Zn/Sn.. The optical absorption coefficient of the thin film was above $10^4cm^{-1}$.

• 한국전기전자재료학회논문지
• /
• 제14권2호
• /
• pp.104-110
• /
• 2001

Structural, optical and electrical properties of Cd$_{1-x}$ Zn$_{x}$S films deposited by chemical bath deposition(CBD), which is a very attractive method for low-cost and large-area solar cells, are presented. Especially, in order to control more effectively the zinc component of the films, zinc acetate, which was used as the zinc source, was added in the reaction solution after preheating the reaction solution and the pH of the reaction solution decreased with increasing the concentration of zinc acetate. The films prepared after preheating and pH control had larger zinc component and higher optical band gap. The crystal structures of Cd$_{1-x}$ Zn$_{x}$S films was a wurtzite type with a preferential orientation of the (002) plane and the lattice constants of the films changed from the value for CdS to those for ZnS with increasing the mole ratio of the zinc acetate. The minimum lattice mismatch between Cd$_{1-x}$ Zn$_{x}$S and CdTe were 2.7% at the mole ratio of (ZnAc$_2$)/(CdAc$_2$+ZnAc$_2$)=0.4. As the more zinc substituted for Cd in the films, the optical transmittance improved, while the absorption edge shifted toward a shorterwavelength. the photoconductivity of the films was higher than the dark conductivity, while the ratio of those increased with increasing the mole ratio of zinc acetate. acetate.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.105-106
• /
• 2008

Structural, optical and electrical properties of CdS films deposited by chemical bath deposition (CBD), which are a very attractive method for low-cost and large-area solar cells, are presented. Cadmium sulfide (CdS) is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS films have a great application potential such as solar cell, optical detector and optoelectronics device. In this paper, effects of Rapid Thermal Process (RTP) on the properties of CdS films were investigated. The CdS films were prepared on a glass by chemical bath deposition (CBD) and subsequently annealed at standard temperature $(400^{\circ}C)$ and treatment time (10 min) in various atmospheres (air, vacuum and $N_2$). The CdS films treated RTP in $N_2$ for to min were showed larger grain size and higher carrier density than the other samples.

• 대한기계학회논문집B
• /
• 제37권9호
• /
• pp.823-828
• /
• 2013

실리콘 태양전지의 두께를 줄일 경우 여러 문제점이 발생하게 되는데 그 중에서 태양전지의 휨 현상은 제품 수율의 직접적인 원인이 되어 제품 상용화에 가장 큰 걸림돌이 되고 있다. 본 연구에서는 태양전지의 실리콘 웨이퍼 두께를 가변하였을 때의 휨 정도에 대해 정밀하게 측정하고자 하였다. 측정결과의 신뢰성을 높이고 비 대칭성 형상에 대해 자세하고 정밀하게 분석하기 위해 3D 이미지 스캐너를 사용하였다. 그 결과 실리콘 웨이퍼의 두께가 감소할수록 휨 정도는 급격하게 증가하고 곡률 또한 증가하는 것을 확인할 수 있었다. 실리콘 웨이퍼의 두께가 감소할 수록 휨 정도의 편차가 증가하여 형상의 비 대칭성이 증가하는 것 또한 확인되었다. 또한 Ag 전극의 부착이 휨 현상을 어느 정도 감소시키는 것을 알 수 있었다.

• 한국주조공학회지
• /
• 제33권2호
• /
• pp.69-74
• /
• 2013

Silicon (Si) wafer was grown by using direct growth from Si melt and contaminations of wafer during the process were investigated. In our process, BN was coated inside of all graphite parts including crucible in system to prevent carbon contamination. In addition, coated BN layer enhance the wettability, which ensures the favorable shape of grown wafer by proper flow of Si melt in casting mold. As a result, polycrystalline silicon wafer with dimension of $156{\times}156$ mm and thickness of $300{\pm}20$ um was successively obtained. There were, however, severe contaminations such as BN and SiC on surface of the as-grown wafer. While BN powders were easily removed by brushing surface, SiC could not be eliminated. As a result of BN analysis, C source for SiC was from binder contained in BN slurry. Therefore, to eliminate those C sources, additional flushing process was carried out before Si was melted. By adding 3-times flushing processes, SiC was not detected on the surface of as-grown Si wafer. Polycrystalline Si wafer directly grown from Si melt in this study can be applied for the cost-effective Si solar cells.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2011년도 추계학술대회 초록집
• /
• pp.99.2-99.2
• /
• 2011

Transparent conducting oxides (TCOs) supported on glass are widely used as substrates in PEC studies for photovoltaic hydrogen generation applications However, high sheet resistane ($10{\sim}15{\Omega}/cm^2$) and fragileness of glass-supported TCO substrates are the obstacles to produce the large area PEC cells. Such internal sheet resistance is detrimental to efficient collection of photogenerated majority charge carriers at the photoactive material and electrolyte interface. Moreover, these TCO substrates are very expensive and consume about 40~60% cost of the devices. Hence, a low sheet resistance of the substrate is a key point in improving the performance of PEC devices. Metallic substrates coated with a photoactive material would be a good choice for efficient charge collection. Such metal substrates based photanodes are best candidate for large-scale phtoelectrochemical water splitting for hydrogen generation. In this study, we report the enhanced PEC performance of $WO_3$ film on metal(chemical etched, bare) substrate. It is proposed that interface between $WO_3$ and the metal substrate is responsible for efficient charge transfer and demonstrated significant improvement in the photoelectrochmical performance. X-ray diffration and FESEM suduies reveled that $WO_3$ films are monoclinic, porous, polycrystalline with average grain size of ~50nm. Photocurrent of $WO_3$ prepared on metal substrates was measured in 0.5M $H_2SO_4$ electroyte under simulated $100mW/cm^2$ illumination.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2011년도 추계학술대회 초록집
• /
• pp.47.1-47.1
• /
• 2011

We report on a direct measurement of two-dimensional chemical and electrical distribution on the surface of photovoltaic Cu(In,Ga)$Se_2$ thin-films using a nano-scale spectroscopic and electrical characterization, respectively. The Raman measurement reveals non-uniformed surface phonon vibration which comes from different compositional distribution and defects in the nature of polycrystalline thin-films. On the other hand, potential analysis by scanning Kelvin probe force microscopy shows a higher surface potential or a small work function on grain boundaries of the thin-films than on the grain surfaces. This demonstrates the grain boundary is positively charged and local built-in potential exist on grain boundary, which improve electron-hole separation on grain boundary. Local electrical transport measurements with scanning probe microscopy on the thin-films indicates that as external bias is increases, local current is started to flow from grain boundary and saturated over 0.3 V external bias. This accounts for carrier behavior in the vicinity of grain boundary with regard to defect states. We suggest that electron-hole separation at the grain boundary as well as chemical and electrical distribution of polycrystalline Cu(In,Ga)$Se_2$ thin-films.