Journal of Korea Foundry Society (한국주조공학회지)

Korea Foundry Society (한국주조공학회)
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SiC Contaminations in Polycrystalline-Silicon Wafer Directly Grown from Si Melt for Photovoltaic Applications

실리콘 용탕으로부터 직접 제조된 태양광용 다결정 실리콘의 SiC 오염 연구

  • Lee, Ye-Neung (Energy Materials and Convergence Research Department, Korea Institute of Energy Research) ;
  • Jang, Bo-Yun (Energy Materials and Convergence Research Department, Korea Institute of Energy Research) ;
  • Lee, Jin-Seok (Energy Materials and Convergence Research Department, Korea Institute of Energy Research) ;
  • Kim, Joon-Soo (Energy Materials and Convergence Research Department, Korea Institute of Energy Research) ;
  • Ahn, Young-Soo (Energy Materials and Convergence Research Department, Korea Institute of Energy Research) ;
  • Yoon, Woo-Young (Department of Materials Science and Engineering, Korea University)
  • 이예능 (한국에너지기술연구원 에너지융합소재연구단) ;
  • 장보윤 (한국에너지기술연구원 에너지융합소재연구단) ;
  • 이진석 (한국에너지기술연구원 에너지융합소재연구단) ;
  • 김준수 (한국에너지기술연구원 에너지융합소재연구단) ;
  • 안영수 (한국에너지기술연구원 에너지융합소재연구단) ;
  • 윤우영 (고려대학교 신소재공학부)
  • Received : 2013.04.01
  • Accepted : 2013.04.20
  • Published : 2013.04.30
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Abstract

Silicon (Si) wafer was grown by using direct growth from Si melt and contaminations of wafer during the process were investigated. In our process, BN was coated inside of all graphite parts including crucible in system to prevent carbon contamination. In addition, coated BN layer enhance the wettability, which ensures the favorable shape of grown wafer by proper flow of Si melt in casting mold. As a result, polycrystalline silicon wafer with dimension of $156{\times}156$ mm and thickness of $300{\pm}20$ um was successively obtained. There were, however, severe contaminations such as BN and SiC on surface of the as-grown wafer. While BN powders were easily removed by brushing surface, SiC could not be eliminated. As a result of BN analysis, C source for SiC was from binder contained in BN slurry. Therefore, to eliminate those C sources, additional flushing process was carried out before Si was melted. By adding 3-times flushing processes, SiC was not detected on the surface of as-grown Si wafer. Polycrystalline Si wafer directly grown from Si melt in this study can be applied for the cost-effective Si solar cells.

Keywords

References

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