• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.81-83
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• 2005

Photocurrent of a single-crystalline Si nanowire is investigated in this paper. Single-crystalline Si nanowires with amorphous $SiO_2$ shells were first synthesized from ball-milled SiO powders by thermal chemical vapor deposition, and then the amorphous $SiO_2$ shellswere etched out from the as-synthesized Si nanowires. For a single-crystalline Si nanowire, photocurrent-voltage curves taken in air at room temperature were non-linear, and rapid photoresponses were observed when the light was switched on and off. The photocurrent was not changed in intensity under the illumination. Photocurrent mechanism in the single-crystalline Si nanowire is discussed in this paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.445-448
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• 2016

Transparent UV photodetector was achieved by using wide bandgap metal oxide materials. In order to realize transparent heterojunction UV photodetector, n-type ZnO and p-type NiO metal oxide materials were employed. High light-absorbing SnS layer was inserted into the n-ZnO and p-NiO layers. High-performing UV photodetector was realized by ZnO/SnS/NiO/ITO structures to provide extremely fast response times (Fall time: $7{\mu}s$ and rise time: $13{\mu}s$) and high rectifying ratio. The use of functional SnS-embedded photodetector would provide a route for high functional photoelectric devices.

• ALGAE
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• v.32 no.3
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• pp.235-244
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• 2017

Freshwater algae living in shallow waters have evolved various photomovement to stay in the optimum light condition for survival. Previous action-spectra investigations showed that Spirogyra filaments have phototropic movement in blue light. To decipher the genetic control of phototropic movement, two phototropin homologues were isolated from Spirogyra varians, and named SvphotA and SvphotB. Both phototropins have similar molecular structure consisted of two light-oxygen-voltage domains (LOV1, LOV2) and a serine / threonine kinase domain. SvphotA and SvphotB had 48.7% sequence identity. Phylogenetic analysis showed SvphotA and SvphotB belong to different clades suggesting early divergence, possibly before the divergence of land plants from the Zygnematales. Quantitative PCR and northern blot analysis showed that SvphotA and SvphotB responded differently to red and blue light. SvphotA was consistently expressed in the dark and in blue light, while SvphotB was expressed only when the plants were exposed to light. When the filaments were exposed to red light, SvphotA was significantly downregulated whereas SvphotB was highly upregulated. These results suggest that the two phototropins may have different roles in the photoresponse in S. varians.

• Rapid Communication in Photoscience
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• v.4 no.1
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• pp.25-28
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• 2015

The time-resolved photoexcitation dynamics of electrical conductivity of the magnetic organic superconductor ${\lambda}-(BETS)_2Fe_{0.45}Ga_{0.55}Cl_4$ has been studied with a nanosecond visible laser pulse at its three different phases, i. e., metallic phase, superconducting phase and insulating phase. A transient increase of the resistance is induced by photoirradiation at all the temperatures measured for all three phases, but the decay profile shows a significant temperature dependence. The relaxation rate in the metallic and insulating phase are different from each other, and the decay time is relatively faster and almost constant in the metallic phase. However, a prolongation of the relaxation time is observed at temperature just around the narrow superconducting phase. Nonbolometric (nonthermal) origin of the observed photoresponse of the electrical conductivity is confirmed in the superconducting phase.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• Journal of the Korean Ceramic Society
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• v.56 no.3
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• pp.308-316
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• 2019

CdS_xSe_1-x ternary alloy nanowires (x = 0, 0.5, 1.0) were fabricated by in-situ synthesis on interdigitated electrode. Morphology analysis of the alloy nanowires according to the synthesis zone and composition analysis of the nanowires were carried out by SEM and EDX. The crystal structures of the alloy nanowires were studied by XRD analysis. The I-V characteristics of the nanowire photosensors were analyzed according to the intensity of incident light. The influence of zonal synthesis position on the photosensor response to the wavelength of incident light was also analyzed, and was found to be related to the bandgap of alloy nanowires. The analysis results indicate that photosensors with a specific photoresponse could be selected based on the composition of the source materials of nanowires as well as by controlling the in-situ synthesis zone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.7-8
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• 2005

Silicon(Si) nanowires have been grown by thermal chemical vapor deposition using the 20h ball-milled SiO powders under controlled conditions without the catalyst. For the synthesis of Si nanowires, $Al_2O_3$ substrates were used. Current-Voltage(I-V) and photoresponses were measured for the single Si nanowire in vacuum at room temperature. The light sources for these measurements were the 325 nm wavelength line from a He-Cd laser and the 633 nm wavelength line from a He-Ne laser. The intensity of the photoresponse is independent of the illumination time. And rise and decay times of the photoresponses are shorter than 1 sec.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.212-216
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• 1999

SiC(3C) photodiodes (PDs) were fabricated on p-type Si(111) substrates using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane (TMS) with $H_{2}$ carrier gas. Electrical properties of SiC(3C) were investigated by Hall measurement and current-voltage (I-V) characteristics. SiC(3C) layers exhibited n-type conductivity. Ohmic contact was formed by thermal evaporation Al metal through a shadow-mask. The optical gain $(G_{op})$ of the SiC(3C)/Si PD was measured as a function of the incident wavelength. For the analysis of the photovoltaic detection of the Sic(3C) n/p PD, the spectral response (SR) has calculated by using the electrical parameters of the SiC(3C) layer and the geometric structure of the PD. The peak response calculated for properly chosen parameters was about 0.75 near 550 nm. We expect a good photoresponse in the SiC(3C) heterostructure for the wavelength range of 400~600 nm. The SiC(3C) photodiode can detect blue and near ultraviolet (UV) radiation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.339-344
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• 2017

An all-transparent photodetector was fabricated by structuring $Cu_2O$/ZnO/AZO/ITO on a glass substrate. The visible-range transmittance was as high as 80%, which ensures clear vision forhuman eyes. High-transparency metal conductive oxides (p-type $Cu_2O$ and n-type ZnO) were appliedto form the transparent p/n junction. The functional AZO layer was adopted to improve the transparent photodetector performance between the ZnO and ITO, improving the photoresponses because of its electrical conductivity. To clarify the AZO functionality, a comparator device was prepared without the AZO layer in the formation of $Cu_2O$/ZnO/ITO/Glass. The $Cu_2O$/ZnO/AZO/ITO device provided a rectifying ratio of 113.46, significantly better than the 9.44 of the $Cu_2O$/ZnO/ITO device. In addition, the $Cu_2O$/ZnO/AZO/ITO device's photoresponses at short wavelengths were better than those of the comparator. The functioning AZO layer provides ahigh-performing transparent Cu oxide photodetector and may suggest a route for the design of efficient photoelectric devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.213-224
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• 2010

An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.