• Resources Recycling
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• v.18 no.1
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• pp.58-67
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• 2009

The annual requirement of domestic waste photoresist stripper solution is about 1 trillion won level (50,000 tons) depends entirely on imports for its supplies. Nevertheless, there waste strippers which contain the impurities have been recycled or incinerated to a low level of recycle. These days the recycling technologies of the waste stripper solution has been widely studied from the view points of economy and efficiency. In this paper, the recycling technologies on patent of the waste stripper solution were analyzed. The range of search was limited within the open patents of USA (US), European Union (EP), Japan (JP), and Korea (KR) up to september, 2007. Patents have been collected using key-words searching and filtered by filtering criteria. The trends of the patents was analyzed by the years, countries, companies, and technologies.

• Resources Recycling
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• v.22 no.4
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• pp.81-90
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• 2013

Since the 1990s, the rapid development of information and communication industry, the demand for semiconductor and LCD continues to increase. Therefore in the formation of fine circuit patterns, which are the cores of sensitizer and the most expensive thinner and stripper liquor used to remove photoresist and its dilution, the amount in demand are dramatically increasing, emerging need for recycling of waste thinner and stripper liquor. Recently, recycling technologies of stripping process waste solution has been widely studied by economic aspects and environmental aspects, in terms of efficiency of the stripping process. In this study, analyzed paper and patent for recycling technologies of waste solution from stripping process. The range of search was limited in the open patents of USA (US), European Union (EP), Japan (JP), Korea (KR) and SCI journals from 1981 to 2010. Patents and journals were collected using key-words searching and filtered by filtering criteria. The trends of the patents and journals was analyzed by the years, countries, companies, and technologies.

• Polymer(Korea)
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• v.28 no.6
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• pp.494-501
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• 2004

A new alkali developable photosensitive poly(amic acid) (PAA-0) with transmittance at 400 nm was synthesized from cyclobutane-1,2,3,4-tetracarboxylic dianhydride, 2-(methacryloyloxy)ethyl-3,5-diamino-benzoate and 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyl disiloxane in N-methyl-2-pyrrolidinone. Photosensitivity of the PAA-0 was investigated at 365-400 nm in the presence of a photoinitiator using a high pressure mercury lamp. The photo-cured poly(amic acid) was insoluble toward aqueous 2.38 wt% tetramethylammonium hydroxide solution. Negative pattern of the PAA-0 with 25 ${\mu}{\textrm}{m}$ resolution was obtained by developing with 2.38 wt% tetramethylammonium hydroxide solution after exposure of 600 mJ/$\textrm{cm}^2$ in the presence of 2,2-dimethoxy-2-phenyl-acetophenone as a photoinitiator. The patterned poly(amic acid) was converted to polyimide by thermal curing at 25$0^{\circ}C$ for 50 min, which showed chemical resistance against photoresist stripper as well as good transmittance at 400 nm.