• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.759-764
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• 2012

Copper Pillar Tin Bump (CPTB) was investigated for high density chip interconnect technology development, which was prepared by electroplating and electro-less plating methods. Copper pillar tin bumps that have $100{\mu}m$ pitch were introduced with fabrication process using a KM-1250 dry film photoresist (DFR), with copper electroplating for Copper Pillar Bump (CPB) formation firstly, and then tin electro-less plating on it for control oxidation. Electric resistivity and mechanical shear strength measurements were introduced to characterize the oxidation effects and bonding process as a function of thermo-compression. Electrical resistivity increased with increasing oxidation thickness, and shear strength had maximum value with $330^{\circ}C$ and 500 N at thermo-compression process. Through the simulation work, it was proved that the CPTB decreased in its size of conduction area as time passes, however it was largely affected by the copper oxidation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.307-311
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• 2014

Because of a waveguiding effect and total internal reflection caused by a difference in refractive indices, only 20% of generated light is emitted to the air and the rest is trapped or absorbed in the device. An improvement of outcoupled efficiency of organic light-emitting diodes was studied using a microlens array. Mold of microlens array was fabricated by using photo-lithography with the AZ9260 photoresist, and the microlens array was formed onto the glass substrate using the UV curing agent named ZPU13-440. Device structure consists of microlens/glass/ITO/TPD/$Alq_3$/LiF/Al. It was found that there is an improvement of external quantum efficiency by about 20% at the same current density for the device with the microlens array compared to that of the reference one. Simulated outcoupled efficiency shows the improvement by about 20% for the device with the microlens array compared to that of the reference one. These results are consistent with the experimental ones.

• Journal of Electrical Engineering and Technology
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• v.4 no.4
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• pp.546-551
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• 2009

In this paper, we describe a self-aligned fabrication method for a nano-patterned bottom electrode using flood exposure from the backside. Misalignments between layers could cause the final devices to fail after the fabrication of the nano-scale bottom electrodes. A self-alignment was exploited to embed the bottom electrode inside the glass substrate. Aluminum patterns act as a dry etching mask to fabricate glass trenches as well as a self-aligned photomask during the flood exposure from the backside. The patterned photoresist (PR) has a negative sidewall slope using the flood exposure. The sidewall slopes of the glass trench and the patterned PR were $54.00^{\circ}$ and $63.47^{\circ}$, respectively. The negative sidewall enables an embedment of a gold layer inside $0.7{\mu}m$ wide glass trenches. Gold residues on the trench edges were removed by the additional flood exposure with wet etching. The sidewall slopes of the patterned PR are related to the slopes of the glass trenches. Nano-scale bottom electrodes inside the glass trenches will be used in beam resonators operating at high resonant frequencies.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.169-175
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• 1998

The plasma etching of polysilicon was performed with the HBr/$Cl_2/He-O_2$ gas mixture. The residual layers after photoresist strip were investigated using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The etch residue was identified as silicon oxide deposited on the top of the patterned polysilicon. In order to clarify the formation mechanism of the etch residue, the effects of various gas mixtures such as $Cl_2/He-O_2$and HBr/$Cl_2$were investigated. We found that the etch residue is well formed in the presence of oxygen, suggesting that the etch residue is caused by the reaction of oxvgen and non-volatile silicon halide compounds. Wet cleaning and dry etch cleaning processes were applied to remove the polysilicon etch residue, which can affect the electrical characteristics and further device processes. XPS results show that the wet cleaning is suitable for the removal of the etch residue.

• Transactions of Materials Processing
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• v.15 no.9 s.90
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• pp.667-672
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• 2006

Agglutination is one of the most commonly employed reactions in clinical diagnosis. In this paper, we have designed and fabricated nickel mold insert for injection molding of a microfluidic lab-on-a-chip for the purpose of the efficient detection of agglutination. In the presented microfluidic lab-on-a-chip, two inlets for sample blood and reagent, flow guiding microchannels, improved serpentine laminating micromixer(ISLM) and reaction microwells are fully integrated. The ISLM, recently developed by our group, can highly improve mixing of the sample blood and reagent in the microchannel, thereby enhancing reaction of agglutinogens and agglutinins. The reaction microwell was designed to contain large volume of about $25{\mu}l$ of the mixture of sample blood and reagent. The result of agglutination in the reaction microwell could be determined by means of the level of the light transmission. To achieve the cost-effectiveness, the microfluidic lab-on-a-chip was realized by the injection molding of COC(cyclic olefin copolymer) and thermal bonding of two injection molded COC substrates. To define microfeatures in the microfluidic lab-on-a-chip precisely, the nickel mold inserts of lab-on-a-chip for the injection molding were fabricated by combining the UV photolithography with a negative photoresist SU-8 and the nickel electroplating process. The microfluidic lab-on-a-chip developed in this study could be applied to various clinical diagnosis based on agglutination.

• International Journal of Internet, Broadcasting and Communication
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• v.7 no.2
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• pp.16-27
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• 2015

Holography technology which was developed by Dennis Gabor (1900~1979) in 1948 is a technology to record wave planes of actual 3D objects. It is known as the only technology which can express 3D information most perfectly close to human-friendly. Holography technology is widely used in advertisement, architecture and arts as well as science technology areas. Especially, digital holographic print which is an applied area is greatly used in military map, architecture map and cultural asset restoration by printing and reproducing 3D information. Holography is realized by recording and reproducing the amplitude and phase information on high resolution film using coherent light like laser. Recording materials for digital holographic printer are silver halide, photoresist and photopolymer. Because the materials have different diffraction efficiency according to film characteristics of each manufacturer, appropriate guide lines should be suggested through efficiency analysis of each film. This paper suggests appropriate guide lines through the diffraction efficiency measurement of silver halide which is a holographic printer recording medium. And the objective of this study is to suggest appropriate guide lines through diffraction efficiency analysis of Ultimate 08-C and PFG-03C which are commercially used. The experiment was prepared by self-diffraction efficiency system which measures the strength with the defector by penetrating RGB recording medium and concentrating diffracted beams through collimating lens. The experiment showed Geola's PFG-03C which is a silver halide for full color has price/performance advantage in optical hologram recording, but recording angles and reproduction angles are irregular for digital holographic printer recording. Ultimate's Ultimate08-C for full color shows its diffraction efficiency is relatively stable and high according to recording angles and laser wavelength.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.10a
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• pp.726-729
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• 2010

Copper Pillar Tin Bump (CPTB) was investigated for high density chip interconnect technology development, which was prepared by electroplating and electro-less plating methods. Copper pillar tin bumps that have $100{\mu}m$ pitch were introduced with fabrication process using a KM-1250 dry film photoresist (DFR), with copper electroplating for Copper Pillar Bump (CPB) formation firstly, and then tin electro-less plating on it for control oxidation. Electric resistivity and mechanical shear strength measurements were introduced to characterize the oxidation effects and bonding process as a function of thermo-compression. Electrical resistivity increased with increasing oxidation thickness, and shear strength had maximum value with $330^{\circ}C$ and 500 N thermo-compression process. Through the simulation work, it was proved that when the CPTB decreased in its size, it was largely affected by the copper oxidation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.15-20
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• 2009

In a detection system based on laser light scattering, focusing an excitation laser beam into a focal point of a channel in a microfluidic chip is important for obtaining the highest excitation intensity, and consequently for obtaining a laser light scattering signal using a photodetector with a high efficiency. In this paper, we present a polydimethylsiloxane (PDMS) microfluidic chip consisting of an integrated PDMS microlens for cell detection based on laser light scattering. We fabricated PDMS microlens for optical detection system by simply putting down on PDMS chips. The PDMS microlens was fabricated by photoresist reflow and replica molding. This fabrication technique is simple and has an excellent property in terms of the microlens and a high-dimensional accuracy. The PDMS microlens integrated on the PDMS microfluidic chip has been verified to improve the laser intensity, and accordingly, the signal-to-noise ratio and sensitivity of laser light scattering detection for red blood cells(RBCs)

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.5
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• pp.132-141
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• 1996

The pixelated phase grating has been studied as a kind of diffraction gratings splitting and input beam into multiple spots. It consists of regular size cells which produce phase delays, and each cell provokes the phase delay up to sixteen levels. We have compared and analyzed the characteristics of multi-level phase gratings, laying streess on efficiency and resulted pattern. Experimental resutls obtained form fabricated grating have been presented, and the real-time method using a liquid-crystal spatial light modulator has been demonstrated through experiments. Gratings making meams with specific intensities have been designed and optical images have been generated by them. In order to specific intensities have been designed and optical images have been genrated by them. In order to decide the phase delay of each cell, optimization conditon consists of diffraction efficiency and target values. One period of phase gratings fabricated with surface relief was less than 256${\mu}m{\times}256{\mu}m$ and size of each cell was 1${\mu}m{\times}1{\mu}m$ surface relief grating has been made by coating photoresist on the glass plate, writing information pattern by Ar laser and developing it. in the experiment for real-tiem processing liquid-crystal display of epson video projector has been used.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.114-119
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• 1996

The use of holographic interference lithography and removal techniques to corrugate GaAs substrate have been studied. The periodic photoresist structure, which serves as a protective mask during etching, is holographically prepared. Subsequently periodic V-grooved pattern is formed on the GaAs substrate by conventional a H$_{2}$SO$_{4}$-H$_{2}$O$_{2}$-H$_{2}$O wet etching. The linewidth of a GaAs pattern is about 0.4$\mu$m and the depth is 0.5$\mu$m A quantum wires(QWRs) array is well formed on the V-grooved substrate by MOCVD (metalorganic chemical vapor deposition) growth of GaAs/Al$_{0.5}$Ga$_{0.5}$As (50$\AA$/300$\AA$) quantum wells. The formation of QWR array is confirmed by the temperature dependent photoluminescence (PL) measurement. The intensive PL peak with a FWHM of 6meV at 21K shows the high quality of the QWR array.