• Proceedings of the Optical Society of Korea Conference
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• 1998.08a
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• pp.194-195
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.150-150
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• 2003

wide bind gap과 wurtzite hexagonal structure를 가지고 있으며 청색 발광 및 청자색 레이저 특성을 보이는 III-V족 화합물반도체 GaN는 laser diodes (LD) 및 light emitting diodes (LED) 재료로 주목받고있는 주요 전자재료이다. 본 연구에서는 GaN를 chemical vapor deposition (CVD) 법을 이용하여 vapor-liquid-solid (VLS) mechanisum에 의하여 GaN나노와이어 형태로 성장시켰다. 기판은 (001)Si을 사용하였고 suputtering을 이용하여 GaN와 AlN의 double buffer layer (DBL)를 증착시켰으며 촉매로는 Ni을 사용하였다. 또한, 원료로는 고순도 Ga금속과 NH$_3$ gas를, carrier gas로는 Ar을 사용하여 GaN/AlN/(001)Si 위에 GaN 나노와이어를 성장시켰다. 성장된 GaN 나노와이어는 DBL의 두께, Ga source의 양, 튜브 안의 압력, 튜브 안의 위치 등의 제 공정변수에 따라 tangled, straight 등의 다양한 형상을 보였으며 지름은 약 30~100 nm, 길이는 수 $\mu\textrm{m}$로 관찰되었다. GaN나노와이어의 결정성, 형상 및 발광특성 등을 x-ray diffraction (XRD), photoluminesence (PL), scanning electron microscope (SEM), transmision electron microscope (TEM) 등을 이용하여 측정하였으며 제 공정변수와의 상관관계를 규명하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.489-489
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• 2011

The effect of Si quantum dots for solar cell appications was investigated. The 5 ~ 10 nm Si nanoparticle was fabricated on p-type single and poly crystalline wafer by magnetron sputtering and laser irradiation process. Scanning electron microscopy (SEM), atomic force measurement (AFM) and transmission electron microscopy (TEM) images showed that the Si QDs array were clearly embedded in insulating layer ($SiO_2$). Photoluminesence (PL) measurements reliably exhibited bandgap transitions with every size of Si QDs. The photo-current measurements were showed different result with size of QD and number of superlattice.

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.84-89
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• 2006

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.

• Proceedings of the Optical Society of Korea Conference
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• 1995.06a
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• pp.127-137
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• 1995

Anomalously large real space charge transfer through thick barries in GaAs asymmetric double quantum wells is studied by photoluminesence exitation. This inter-well excitonic transfer is very large when the barrier is the Al0.3Ga0.7As alloy, but disappears when the barrier is GaAs/AlAs digital alloy with an equivalent Al concentration of 0.28. These resilts combined with observed x and barrier thickness depence suggest that the spatial fluctuation of the atomic arrangment of Ga and Al in the alloy may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions which takes into account the side fluctuation effects.

• Journal of Sensor Science and Technology
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• v.15 no.3
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• pp.216-221
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• 2006

ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure ($35{\sim}350$ mtorr) conditions. The Arsenic-doped (1, 3 wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The ${\theta}-2{\theta}$ XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films.

• Journal of the Korean Vacuum Society
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• v.1 no.3
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• pp.360-370
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• 1992

HWE(Hot-Wall Epitaxy) 방법에 의하여 pyrex 유리기판 위에 CdS 다결정 박막을 성장하였다. X-선 회절실험 결과 CdS 박막은 육방정이었는데 (0002)면보다 91013)면이 강 하게 성장됨을 알 수 있었다. 전자현미경으로 표면을 분석한 결과 입자의 크기는 기판의 온 도가 48$0^{\circ}C$, 증발원의 온도가 $610^{\circ}C$일 때 1~1.5$mu extrm{m}$로서 가장 컸다. 박막의 표면저항은 4-point probe로서 측정한 결과 10-8$\Omega$/\ulcorner이상이었다. 성장된 CdS 다결정 박막의 photoluminesence을 20K에서 측정하였는데 bound exciton, donor acceptor pair에 의한 발광이 관측되었다. Spectral response의 peak는 505nm이었다. CdS 다결정 박막의 표면 저항을 줄이기 위하여 여러 가지 온도에서 Indium을 확산시켰다. 그 결과 표면저항은 ~ $\times$ 101에서 ~ $\times$ 103$\Omega$/\ulcorner 정도 감소되었다. 50$0^{\circ}C$에 In을 1시간 확산시켰을 때 표면저항은 1300$\Omega$/\ulcorner이었다. 이 때 CdS : In의 운반자 농도는 1.2 $\times$ 1018cm-3, 이동도는 1.8cm-2/V-sec, 비저항은 1.3 $\times$ 10-2$\Omega$-cm이었다. CdS : In의 photoluminescence는 20K 에서 Gaussian curve를 보여 주었으며 peak의 위치는 510nm이었다. CdS : In 박막의 spectral response의 peak는 상온에서 500nm이다. CdS : In 광전도 cell의 sensitivity ${\gamma}$ =0.77이고, 최대 허용소비전력은 p=120mW, 100lux에서 rise time은 8 msec, decay time 은 6 msec이다.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.41-44
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• 2014

In this paper, we will investigate the activation energies of Nb for $TiO_2$ using Hall effect measurement and photoluminescence (PL) system. Nb-doped $TiO_2$ thin film was grown on $SrTiO_3$ substrate by pulsed laser deposition (PLD) technique. After measurements, activation energies of niobium donor were 14.52 meV in Hall effect measurement, and 6.72 meV in PL measurement, respectively. These results showed different tendencies which are measured from the samples with acceptor materials. Therefore, it is thought that more research on activation energies for dopants of shallow donor level is expected.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.207-210
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• 2005

In order to investigate the influence of the homo buffer layer on the microstructure of the ZnO thin film, undoped ZnO buffer layer were deposited on sapphire (0001) substrates by ultra high vaccum pulsed laser deposition (UHV-PLD) and molecular beam eiptaxy (MBE). After high temperature annealing at $600^{\circ}C$ for 30min, undoped ZnO buffer layer was deposited with various oxygen pressure (35~350mtorr). On the grown layer of undoped ZnO, Arsenic-doped(l, 3wt%) ZnO layers were deposited by UHV-PLD. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement. From $\Theta-2\Theta$ XRD analysis, all the films showed strong (0002) diffraction peak, and this indicates that the grains grew uniformly with the c-axis perpendicular to the substrate surface. Field emission scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO were varied with oxygen pressure, arsenic doping level, and the deposition method of undoped ZnO buffer layers. The films became denser and smoother in the cases of introducing MBE-buffer layer and lower oxygen pressure during As-doped ZnO deposition. Higher As-doping concentration enhanced the columnar-character of the films.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.81-92
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• 1990

We developed the technologies of wuperlattice and HEMT structures grown by MOCVD, and their characterization. In the case of GaAs/AlGaAs superlattice, the periodicity, interface abruptness and Al compositional uniformity were confirmed through the shallow angle lapping technique and double crystal x-ray measurement. Photoluminesence spectra due to quantum size effect of isolated quantum wells were also observed. The heterojunction abruptness was estimated to be within 1 monolayer fluctuation by the analysis of the relation between PL FWHM(Full Width at Half Maximum) and well width. HEMT structure was successfully grown by MOCVD. The 2 dimensional electron gas formation at heterointerface in HEMT structure were evidenced through the C-V profile, SdH (Shubnikov-de Haas)oscillation and low temperature Hall measurement. Low field mobility were as high as $69,000cm^2/v.sec$ for a sheet carrier density of $5.5{\times}10^{11}cm^-2$ at 15K, and $41,200cm^2/v.sec$ for a sheet carrier density of $6.6{\times}10^{11}cm^-2$ at 77K. In addition, well defined SdH oscillation and quantized Hall plateaues were observed.